title: Stark tuning of donor electron spins in silicon.
abstract: We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA. bradbury@princeton.edu
authors.forename: F R
authors.initials: FR
authors.lastname: Bradbury
authors.forename: A M
authors.initials: AM
authors.lastname: Tyryshkin
authors.forename: Guillaume
authors.initials: G
authors.lastname: Sabouret
authors.forename: Jeff
authors.initials: J
authors.lastname: Bokor
authors.forename: Thomas
authors.initials: T
authors.lastname: Schenkel
authors.forename: S A
authors.initials: SA
authors.lastname: Lyon