Tunneling conductance of graphene NIS junctions.
We show that, in contrast with conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations is maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for a large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.
Bhattacharjee
Subhro
S
CCMT, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
Sengupta
K
K