GaN nanorod Schottky and p-n junction diodes.
Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod diodes were compared to those from conventional thin-film diodes. Large-area contacts, enabling diodes with arrays of GaN nanorods in parallel, were also fabricated and their electrical characteristics investigated. The defect-free nature of the GaN nanorods and enhanced tunneling effects due to nanoscale contacts have been invoked to explain the electrical behavior of the nanorod diodes.
Deb
Parijat
P
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA. pdeb@purdue.edu
Kim
Hogyoung
H
Qin
Yexian
Y
Lahiji
Roya
R
Oliver
Mark
M
Reifenberger
Ronald
R
Sands
Timothy
T