Phosphorus donors in highly strained silicon.
The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.
Huebl
Hans
H
Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, Garching, Germany. huebl@wsi.tum.de
Stegner
Andre R
AR
Stutzmann
Martin
M
Brandt
Martin S
MS
Vogg
Guenther
G
Bensch
Frank
F
Rauls
Eva
E
Gerstmann
Uwe
U