title: Doping variation of orbitally induced anisotropy in the electronic structure of La1-xSrxVO3.
abstract: The variation of anisotropic charge dynamics in the course of a filling-control insulator-metal transition (IMT) in La(1-x)Sr(x)VO3 has been investigated by measurements of optical conductivity spectra with the focus on the role of the t(2g)-orbital degree of freedom. The orbitally induced anisotropic feature of the Mott-gap excitation as well as of the doping-induced midinfrared excitation is suppressed with increasing x, and instead the isotropic and incoherent dynamics of the doped hole dominates over the low-energy excitation near and above the IMT point.
authors.affiliation: Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.
authors.forename: J
authors.initials: J
authors.lastname: Fujioka
authors.forename: S
authors.initials: S
authors.lastname: Miyasaka
authors.forename: Y
authors.initials: Y
authors.lastname: Tokura