title: Properties of Cu(thd)2 as a precursor to prepare Cu/SiO2 catalyst using the atomic layer epitaxy technique.
abstract: The new Cu/SiO2 catalyst is developed by the atomic layer epitaxy (ALE) method. The ALE-Cu/SiO2 catalyst with high dispersion and nanoscale Cu particles appears to have very different catalytic properties from those of the typical Cu-based catalysts, which have satisfactory thermal stability to resist the sintering of Cu particles at 773 K. Due to the formation of small Cu particles, the ALE-Cu/SiO2 can strongly bind CO and give high catalytic activity for CO2 converted to CO in the reverse water-gas-shift reaction. The catalytic activity decreases in the order of 2.4% ALE-Cu/SiO2 =... 2% Pt/SiO2 > 2% Pd/SiO2 > 10.3% IM-Cu/SiO2.
authors.affiliation: Center for General Education, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan, Taiwan 333, Republic of China. cschen@mail.cgu.edu.tw
authors.forename: Ching S
authors.initials: CS
authors.lastname: Chen
authors.forename: Jarrn H
authors.initials: JH
authors.lastname: Lin
authors.forename: Jainn H
authors.initials: JH
authors.lastname: You
authors.forename: Chi R
authors.initials: CR
authors.lastname: Chen