Electrical conducting bis(oxalato)platinate complex with direct connection of CuII ions.
Reactions of K1.62[Pt(ox)2].2H2O and [Cu(bpy)(H2O)3](NO3)2 yielded partially oxidized one-dimensional (1D) bis(oxalato)platinates of [Cu(bpy)(H2O)n]6[Pt(ox)2]7.7H2O (n = 2, 3, or 4) (1) and [Cu(bpy)(H2O)n]8[Pt(ox)2]10.8H2O (n = 3 or 4) (2). The average oxidation numbers of the platinum ions in 1 and 2 are +2.29 and +2.40, respectively. Complexes 1 and 2 crystallize in the triclinic P and monoclinic C2/c space groups, respectively, and the [Pt(ox)2]n- anions are stacked along the crystallographic b axis with 7-fold periodicity for 1 and 10-fold periodicity for 2. In 1, an oxalato ligand in the platinum chain directly coordinates to a paramagnetic [Cu(bpy)(H2O)3]2+ ion, whereas no such direct coordination was observed for 2. The electrical conductivity of 2 at room temperature along the platinum chain is approximately 3 orders of magnitude smaller (sigma||= 1.3 x 10(-3) S cm(-1)) than that of 1 (sigma|| = 0.9-0.5 S cm(-1)), and the activation energies of 1 and 2 are 29 and 67 meV, respectively. The longest inter-platinum distances in 1 and 2 are 2.762 and 3.0082 A, respectively, and this is responsible for the lower electrical conductivity of 2. An X-ray oscillation photograph taken along the b axis of 1 reveals the 7-fold periodicity in the 1D chain, consistent with the period of the Peierls distortion estimated from the degree of partial oxidation. The semiconducting state of 1 can therefore be regarded as a commensurate Peierls state. The magnetoresistance of 1 at ambient pressure indicates no interaction between conduction electrons in the platinum chain and local spins of the paramagnetic CuII ions. Application of hydrostatic pressures of up to 3 GPa enhances electrical conduction, as is often seen as the usual pressure effect on the electrical conductivity, which is due to enhanced orbital (Pt-5dz2) overlap by pressure application.
Yamamoto
Chihiro
C
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8571, Japan.
Nishikawa
Hiroyuki
H
Nihei
Masayuki
M
Shiga
Takuya
T
Hedo
Masato
M
Uwatoko
Yoshiya
Y
Sawa
Hiroshi
H
Kitagawa
Hiroshi
H
Taguchi
Yasujiro
Y
Iwasa
Yoshihiro
Y
Oshio
Hiroki
H