Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire.
Utilizing the coupled piezoelectric and semiconducting dual properties of ZnO, we demonstrate a piezoelectric field effect transistor (PE-FET) that is composed of a ZnO nanowire (NW) (or nanobelt) bridging across two Ohmic contacts, in which the source to drain current is controlled by the bending of the NW. A possible mechanism for the PE-FET is suggested to be associated with the carrier trapping effect and the creation of a charge depletion zone under elastic deformatioin. This PE-FET has been applied as a force/pressure sensor for measuring forces in the nanonewton range and even smaller with the use of smaller NWs. An almost linear relationship between the bending force and the conductance was found at small bending regions, demonstrating the principle of nanowire-based nanoforce and nanopressure sensors.
Wang
Xudong
X
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
Zhou
Jun
J
Song
Jinhui
J
Liu
Jin
J
Xu
Ningsheng
N
Wang
Zhong L
ZL
D004548:Elasticity; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D013314:Stress, Mechanical; D013499:Surface Properties; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide