Silicon-nanowire transistors with intruded nickel-silicide contacts.
Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.
Weber
Walter M
WM
Qimonda Dresden GmbH & Co., Technology Center, D-01099 Dresden, Germany. walter.weber@qimonda.com
Geelhaar
Lutz
L
Graham
Andrew P
AP
Unger
Eugen
E
Duesberg
Georg S
GS
Liebau
Maik
M
Pamler
Werner
W
Chèze
Caroline
C
Riechert
Henning
H
Lugli
Paolo
P
Kreupl
Franz
F