Conductance, surface traps, and passivation in doped silicon nanowires.
We perform ab initio calculations within the Landauer formalism to study the influence of doping on the conductance of surface-passivated silicon nanowires. It is shown that impurities located in the core of the wire induce a strong resonant backscattering at the impurity bound state energies. Surface dangling bond defects have hardly any direct effect on conductance, but they strongly trap both p- and n-type impurities, as evidenced in the case of H-passivated wires and Si/SiO2 interfaces. Upon surface trapping, impurities become transparent to transport, as they are electrically inactive and do not induce any resonant backscattering.
Fernandez-Serra
M-V
MV
Laboratoire de Physique de la Matiere Condensee et Nanostructures, Universite Lyon 1, UMR CNRS 5586, Domaine universitaire de la Doua, F-69622 Villeurbanne, France.
Adessi
Ch
Ch
Blase
X
X