title: Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.
abstract: We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of approximately 40 nm at an approximately 1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.
authors.affiliation: Center for Optical Technologies and Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA.
authors.forename: H S
authors.initials: HS
authors.lastname: Djie
authors.forename: B S
authors.initials: BS
authors.lastname: Ooi
authors.forename: X-M
authors.initials: XM
authors.lastname: Fang
authors.forename: Y
authors.initials: Y
authors.lastname: Wu
authors.forename: J M
authors.initials: JM
authors.lastname: Fastenau
authors.forename: W K
authors.initials: WK
authors.lastname: Liu
authors.forename: M
authors.initials: M
authors.lastname: Hopkinson
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D036103:Nanotechnology / Q000379:methods*; D016011:Normal Distribution; D055095:Optics and Photonics; D045663:Quantum Dots; D013696:Temperature
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium