Stark tuning of donor electron spins in silicon.
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.
Bradbury
F R
FR
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA. bradbury@princeton.edu
Tyryshkin
A M
AM
Sabouret
Guillaume
G
Bokor
Jeff
J
Schenkel
Thomas
T
Lyon
S A
SA