title: NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices.
abstract: We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq3), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.
authors.affiliation: Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Jean-Michel
authors.initials: JM
authors.lastname: Caruge
authors.forename: Jonathan E
authors.initials: JE
authors.lastname: Halpert
authors.forename: Vladimir
authors.initials: V
authors.lastname: Bulović
authors.forename: Moungi G
authors.initials: MG
authors.lastname: Bawendi