title: Silicon-nanowire transistors with intruded nickel-silicide contacts.
abstract: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.
authors.affiliation: Qimonda Dresden GmbH & Co., Technology Center, D-01099 Dresden, Germany. walter.weber@qimonda.com
authors.forename: Walter M
authors.initials: WM
authors.lastname: Weber
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.forename: Andrew P
authors.initials: AP
authors.lastname: Graham
authors.forename: Eugen
authors.initials: E
authors.lastname: Unger
authors.forename: Georg S
authors.initials: GS
authors.lastname: Duesberg
authors.forename: Maik
authors.initials: M
authors.lastname: Liebau
authors.forename: Werner
authors.initials: W
authors.lastname: Pamler
authors.forename: Caroline
authors.initials: C
authors.lastname: Chèze
authors.forename: Henning
authors.initials: H
authors.lastname: Riechert
authors.forename: Paolo
authors.initials: P
authors.lastname: Lugli
authors.forename: Franz
authors.initials: F
authors.lastname: Kreupl