title: Large melting-point hysteresis of Ge nanocrystals embedded in SiO2.
abstract: The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
authors.forename: Q
authors.initials: Q
authors.lastname: Xu
authors.forename: I D
authors.initials: ID
authors.lastname: Sharp
authors.forename: C W
authors.initials: CW
authors.lastname: Yuan
authors.forename: D O
authors.initials: DO
authors.lastname: Yi
authors.forename: C Y
authors.initials: CY
authors.lastname: Liao
authors.forename: A M
authors.initials: AM
authors.lastname: Glaeser
authors.forename: A M
authors.initials: AM
authors.lastname: Minor
authors.forename: J W
authors.initials: JW
authors.lastname: Beeman
authors.forename: M C
authors.initials: MC
authors.lastname: Ridgway
authors.forename: P
authors.initials: P
authors.lastname: Kluth
authors.forename: J W
authors.initials: JW
authors.lastname: Ager
authors.forename: D C
authors.initials: DC
authors.lastname: Chrzan
authors.forename: E E
authors.initials: EE
authors.lastname: Haller