Large melting-point hysteresis of Ge nanocrystals embedded in SiO2.
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
Xu
Q
Q
Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
Sharp
I D
ID
Yuan
C W
CW
Yi
D O
DO
Liao
C Y
CY
Glaeser
A M
AM
Minor
A M
AM
Beeman
J W
JW
Ridgway
M C
MC
Kluth
P
P
Ager
J W
JW
Chrzan
D C
DC
Haller
E E
EE