title: Conductance, surface traps, and passivation in doped silicon nanowires.
abstract: We perform ab initio calculations within the Landauer formalism to study the influence of doping on the conductance of surface-passivated silicon nanowires. It is shown that impurities located in the core of the wire induce a strong resonant backscattering at the impurity bound state energies. Surface dangling bond defects have hardly any direct effect on conductance, but they strongly trap both p- and n-type impurities, as evidenced in the case of H-passivated wires and Si/SiO2 interfaces. Upon surface trapping, impurities become transparent to transport, as they are electrically inactive and do not induce any resonant backscattering.
authors.affiliation: Laboratoire de Physique de la Matiere Condensee et Nanostructures, Universite Lyon 1, UMR CNRS 5586, Domaine universitaire de la Doua, F-69622 Villeurbanne, France.
authors.forename: M-V
authors.initials: MV
authors.lastname: Fernandez-Serra
authors.forename: Ch
authors.initials: Ch
authors.lastname: Adessi
authors.forename: X
authors.initials: X
authors.lastname: Blase