title: GaN nanorod Schottky and p-n junction diodes.
abstract: Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod diodes were compared to those from conventional thin-film diodes. Large-area contacts, enabling diodes with arrays of GaN nanorods in parallel, were also fabricated and their electrical characteristics investigated. The defect-free nature of the GaN nanorods and enhanced tunneling effects due to nanoscale contacts have been invoked to explain the electrical behavior of the nanorod diodes.
authors.affiliation: School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA. pdeb@purdue.edu
authors.forename: Parijat
authors.initials: P
authors.lastname: Deb
authors.forename: Hogyoung
authors.initials: H
authors.lastname: Kim
authors.forename: Yexian
authors.initials: Y
authors.lastname: Qin
authors.forename: Roya
authors.initials: R
authors.lastname: Lahiji
authors.forename: Mark
authors.initials: M
authors.lastname: Oliver
authors.forename: Ronald
authors.initials: R
authors.lastname: Reifenberger
authors.forename: Timothy
authors.initials: T
authors.lastname: Sands