title: Phosphorus donors in highly strained silicon.
abstract: The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.
authors.affiliation: Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, Garching, Germany. huebl@wsi.tum.de
authors.forename: Hans
authors.initials: H
authors.lastname: Huebl
authors.forename: Andre R
authors.initials: AR
authors.lastname: Stegner
authors.forename: Martin
authors.initials: M
authors.lastname: Stutzmann
authors.forename: Martin S
authors.initials: MS
authors.lastname: Brandt
authors.forename: Guenther
authors.initials: G
authors.lastname: Vogg
authors.forename: Frank
authors.initials: F
authors.lastname: Bensch
authors.forename: Eva
authors.initials: E
authors.lastname: Rauls
authors.forename: Uwe
authors.initials: U
authors.lastname: Gerstmann