High electron mobility InAs nanowire field-effect transistors.
Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier field-effect mobility and carrier concentration by taking into account series and leakage resistances, interface state capacitance, and top-gate geometry. Both the back-gate and the top-gate NWFETs exhibit room-temperature field-effect mobility as high as 6580 cm(2) V(-1) s(-1), which is the lower-bound value without interface-capacitance correction, and is the highest mobility reported to date in any semiconductor NW.
Dayeh
Shadi A
SA
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, USA.
Aplin
David P R
DP
Zhou
Xiaotian
X
Yu
Paul K L
PK
Yu
Edward T
ET
Wang
Deli
D
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; C076773:indium arsenide