title: High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes.
abstract: The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source-drain (D-S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D-S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P.R. China.
authors.forename: Chong-an
authors.initials: CA
authors.lastname: Di
authors.forename: Gui
authors.initials: G
authors.lastname: Yu
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
authors.forename: Xinjun
authors.initials: X
authors.lastname: Xu
authors.forename: Dacheng
authors.initials: D
authors.lastname: Wei
authors.forename: Yabin
authors.initials: Y
authors.lastname: Song
authors.forename: Yanming
authors.initials: Y
authors.lastname: Sun
authors.forename: Ying
authors.initials: Y
authors.lastname: Wang
authors.forename: Daoben
authors.initials: D
authors.lastname: Zhu
authors.forename: Jian
authors.initials: J
authors.lastname: Liu
authors.forename: Xinyu
authors.initials: X
authors.lastname: Liu
authors.forename: Dexin
authors.initials: D
authors.lastname: Wu