Vertically aligned carbon-nanotube arrays showing Schottky behavior at room temperature.
Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 x 10(10) cm(-2). The CNT arrays synthesized at 700 degrees C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.
Jung
Seung-Ho
SH
Department of Chemical Engineering, Computer & Electrical Engineering Division, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Jeong
Soo-Hwan
SH
Kim
Sang-Uck
SU
Hwang
Sun-Kyu
SK
Lee
Pyung-Soo
PS
Lee
Kun-Hong
KH
Ko
Ju-Hye
JH
Bae
Eunju
E
Kang
Donghun
D
Park
Wanjun
W
Oh
Hwangyou
H
Kim
Ju-Jin
JJ
Kim
Hyungseok
H
Park
Chan-Gyung
CG
D000535:Aluminum / Q000737:chemistry; D002244:Carbon; D004563:Electrochemistry; D004566:Electrodes; D004581:Electronics; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D053758:Nanoparticles; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D009556:Niobium / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D013696:Temperature; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon; D010087:Oxides; D009556:Niobium; D002244:Carbon; D000535:Aluminum; D012825:Silicon