title: Capacitance fluctuations causing channel noise reduction in stochastic Hodgkin-Huxley systems.
abstract: Voltage-dependent ion channels determine the electric properties of axonal cell membranes. They not only allow the passage of ions through the cell membrane, but also contribute to an additional charging of the cell membrane resulting in the so-called capacitance loading. The switching of the channel gates between an open and a closed configuration is intrinsically related to the movement of gating charge within the cell membrane. At the beginning of an action potential, the transient gating current is opposite to the direction of the current of sodium ions through the membrane. Therefore, the excitability is expected to become reduced due to the influence of a gating current. Our stochastic Hodgkin-Huxley-like modeling takes into account both the channel noise-i.e. the fluctuations of the number of open ion channels-and the capacitance fluctuations that result from the dynamics of the gating charge. We investigate the spiking dynamics of membrane patches of a variable size and analyze the statistics of the spontaneous spiking. As a main result, we find that the gating currents yield a drastic reduction of the spontaneous spiking rate for sufficiently large ion channel clusters. Consequently, this demonstrates a prominent mechanism for channel noise reduction.
authors.affiliation: Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany. Gerhard.Schmid@physik.uni-augsburg.de
authors.forename: G
authors.initials: G
authors.lastname: Schmid
authors.forename: I
authors.initials: I
authors.lastname: Goychuk
authors.forename: P
authors.initials: P
authors.lastname: Hänggi
mesh_terms: D000200:Action Potentials; D000818:Animals; D001369:Axons / Q000502:physiology*; D002462:Cell Membrane; D025802:Electric Capacitance; D004594:Electrophysiology; D015640:Ion Channel Gating / Q000502:physiology; D007473:Ion Channels / Q000502:physiology*; D008959:Models, Neurological; D009474:Neurons / Q000502:physiology*; D018408:Patch-Clamp Techniques; D013269:Stochastic Processes
chemical_list: D007473:Ion Channels