title: Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers.
abstract: The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of -50 degrees C.
authors.affiliation: Air Force Research Laboratory and Electrical and Computer Engineering Department, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA.
authors.forename: W J
authors.initials: WJ
authors.lastname: Siskaninetz
authors.forename: J E
authors.initials: JE
authors.lastname: Ehret
authors.forename: J D
authors.initials: JD
authors.lastname: Albrecht
authors.forename: R G
authors.initials: RG
authors.lastname: Bedford
authors.forename: T R
authors.initials: TR
authors.lastname: Nelson
authors.forename: J A
authors.initials: JA
authors.lastname: Lott