Growth of semiconducting GaN hollow spheres and nanotubes with very thin shells via a controllable liquid gallium-gas interface chemical reaction.
An in situ liquid gallium-gas interface chemical reaction route has been developed to synthesize semiconducting hollow GaN nanospheres with very small shell size by carefully controlling the synthesis temperature and the ammonia reaction gas partial pressure. In this process the gallium droplet does not act as a catalyst but rather as a reactant and a template for the formation of hollow GaN structures. The diameter of the synthesized hollow GaN spheres is typically 20-25 nm and the shell thickness is 3.5-4.5 nm. The GaN nanotubes obtained at higher synthesis temperatures have a length of several hundreds of nanometers and a wall thickness of 3.5-5.0 nm. Both the hollow GaN spheres and nanotubes are polycrystalline and are composed of very fine GaN nanocrystalline particles with a diameter of 3.0-3.5 nm. The room-temperature photoluminescence (PL) spectra for the synthesized hollow GaN spheres and nanotubes, which have a narrow size distribution, display a sharp, blue-shifted band-edge emission peak at 3.52 eV (352 nm) due to quantum size effects.
Yin
Long-Wei
LW
Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. yin.longwei@nims.go.jp
Bando
Yoshio
Y
Li
Mu-Sen
MS
Golberg
Dmitri
D
D000641:Ammonia / Q000737:chemistry; D003460:Crystallization; D005708:Gallium / Q000737:chemistry*; D005740:Gases; D008027:Light; D046529:Microscopy, Electron, Transmission; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D011312:Pressure; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D013696:Temperature; D014961:X-Ray Diffraction
D005740:Gases; C473348:gallium nitride; D000641:Ammonia; D005708:Gallium; D012825:Silicon