Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
We demonstrate the temperature-dependent growth of germanium oxide and silicon oxide based composite nanostructures (multiple nanojunctions of Ge nanowires and SiO(x) nanowires, Ge-filled SiO(2) nanotubes, Ge/SiO(2) coaxial nanocables, and a variety of interesting micrometer-sized structures), aligned SiO(x) nanowire assemblies, and SiO(x) microtubes. The structures were characterized by SEM, TEM, energy-dispersive X-ray spectroscopy, and electron diffraction. The combination of laser ablation of a germanium target and thermal evaoporation of silicon monoxide powders resulted in the formation of Ge and SiO(x) species in a carrier gas; the nano/micro-sized structures grow by either a Ge-catalyzed vapor-liquid-solid or a Ge-nanowire-templated vapor-solid process.
Hu
Junqing
J
Center of Super-Diamond and Advanced Films (COSFAD), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, PR China. HU.Junqing@nims.go.jp
Jiang
Yang
Y
Meng
Xiangmin
X
Lee
Chun-Sing
CS
Lee
Shuit-Tong
ST
D003460:Crystallization; D005857:Germanium / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D013696:Temperature
D005857:Germanium; C040516:germanium oxide; D012822:Silicon Dioxide; D012825:Silicon