title: Fully depleted nanowire field-effect transistor in inversion mode.
authors.affiliation: IBM Research GmbH, Zurich Research Laboratory, Rüschlikon, Switzerland. olh@ibm.zurich.com
authors.forename: Oliver
authors.initials: O
authors.lastname: Hayden
authors.forename: Mikael T
authors.initials: MT
authors.lastname: Björk
authors.forename: Heinz
authors.initials: H
authors.lastname: Schmid
authors.forename: Heike
authors.initials: H
authors.lastname: Riel
authors.forename: Ute
authors.initials: U
authors.lastname: Drechsler
authors.forename: Siegfried F
authors.initials: SF
authors.lastname: Karg
authors.forename: Emanuel
authors.initials: E
authors.lastname: Lörtscher
authors.forename: Walter
authors.initials: W
authors.lastname: Riess
mesh_terms: D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring / Q000295:instrumentation*; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D012825:Silicon