High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes.
The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source-drain (D-S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D-S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.
Di
Chong-an
CA
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P.R. China.
Yu
Gui
G
Liu
Yunqi
Y
Xu
Xinjun
X
Wei
Dacheng
D
Song
Yabin
Y
Sun
Yanming
Y
Wang
Ying
Y
Zhu
Daoben
D
Liu
Jian
J
Liu
Xinyu
X
Wu
Dexin
D