title: Realization of a silicon nanowire vertical surround-gate field-effect transistor.
authors.affiliation: IBM Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
authors.forename: Volker
authors.initials: V
authors.lastname: Schmidt
authors.forename: Heike
authors.initials: H
authors.lastname: Riel
authors.forename: Stephan
authors.initials: S
authors.lastname: Senz
authors.forename: Siegfried
authors.initials: S
authors.lastname: Karg
authors.forename: Walter
authors.initials: W
authors.lastname: Riess
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele
mesh_terms: D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D012825:Silicon