title: Vertically aligned carbon-nanotube arrays showing Schottky behavior at room temperature.
abstract: Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 x 10(10) cm(-2). The CNT arrays synthesized at 700 degrees C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.
authors.affiliation: Department of Chemical Engineering, Computer & Electrical Engineering Division, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
authors.forename: Seung-Ho
authors.initials: SH
authors.lastname: Jung
authors.forename: Soo-Hwan
authors.initials: SH
authors.lastname: Jeong
authors.forename: Sang-Uck
authors.initials: SU
authors.lastname: Kim
authors.forename: Sun-Kyu
authors.initials: SK
authors.lastname: Hwang
authors.forename: Pyung-Soo
authors.initials: PS
authors.lastname: Lee
authors.forename: Kun-Hong
authors.initials: KH
authors.lastname: Lee
authors.forename: Ju-Hye
authors.initials: JH
authors.lastname: Ko
authors.forename: Eunju
authors.initials: E
authors.lastname: Bae
authors.forename: Donghun
authors.initials: D
authors.lastname: Kang
authors.forename: Wanjun
authors.initials: W
authors.lastname: Park
authors.forename: Hwangyou
authors.initials: H
authors.lastname: Oh
authors.forename: Ju-Jin
authors.initials: JJ
authors.lastname: Kim
authors.forename: Hyungseok
authors.initials: H
authors.lastname: Kim
authors.forename: Chan-Gyung
authors.initials: CG
authors.lastname: Park
mesh_terms: D000535:Aluminum / Q000737:chemistry; D002244:Carbon; D004563:Electrochemistry; D004566:Electrodes; D004581:Electronics; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D053758:Nanoparticles; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D009556:Niobium / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D010087:Oxides; D009556:Niobium; D002244:Carbon; D000535:Aluminum; D012825:Silicon