title: Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
authors.affiliation: Nanoelectronics Collaborative Research Center, IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. tsukamot@iis.u-tokyo.ac.jp
authors.forename: Shiro
authors.initials: S
authors.lastname: Tsukamoto
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Honma
authors.forename: Gavin R
authors.initials: GR
authors.lastname: Bell
authors.forename: Akira
authors.initials: A
authors.lastname: Ishii
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide