Realization of a silicon nanowire vertical surround-gate field-effect transistor.
Schmidt
Volker
V
IBM Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
Riel
Heike
H
Senz
Stephan
S
Karg
Siegfried
S
Riess
Walter
W
Gösele
Ulrich
U
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D012825:Silicon