Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor.
Thin films ( approximately 30 nm) of amorphous RuP alloys (P approximately 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 degrees C and 200 mTorr pressure on native SiO2.
Shin
Jinhong
J
Texas Materials Institute, University of Texas at Austin, Austin, TX 78750, USA.
Waheed
Abdul
A
Agapiou
Kyriacos
K
Winkenwerder
Wyatt A
WA
Kim
Hyun-Wu
HW
Jones
Richard A
RA
Hwang
Gyeong S
GS
Ekerdt
John G
JG
D008567:Membranes, Artificial; D009942:Organometallic Compounds / Q000737:chemistry*; D010316:Particle Size; D010758:Phosphorus / Q000737:chemistry*; D012428:Ruthenium / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
D008567:Membranes, Artificial; D009942:Organometallic Compounds; D010758:Phosphorus; D012428:Ruthenium