title: Unconventional gallium oxide nanowires.
abstract: Zigzag and helical beta-Ga(2)O(3) one-dimensional nanostructures were produced by thermal evaporation of gallium oxide in the presence of gallium nitride. High-resolution TEM analysis indicates that each individual zigzag nanostructure has a periodic arrangement of three distinct blocks: two structurally perfect blocks mirrored with respect to each other on the (002) plane, and one stacking-fault-rich block sandwiched between them. In a zigzag nanostructure, the growth orientation of a beta-Ga(2)O(3) crystal changes alternately in three blocks. The zigzag nanostructure as a whole has the [001] axial direction. In addition to zigzag nanostructures, single-crystalline helical nanowires were also obtained.
authors.affiliation: Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. ZHAN.Jinhua@nims.go.jp
authors.forename: Jinhua
authors.initials: J
authors.lastname: Zhan
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Junqing
authors.initials: J
authors.lastname: Hu
authors.forename: Fangfang
authors.initials: F
authors.lastname: Xu
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg
mesh_terms: D002384:Catalysis; D003460:Crystallization; D004563:Electrochemistry; D005708:Gallium / Q000737:chemistry*; D007834:Lasers; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D013499:Surface Properties
chemical_list: C473348:gallium nitride; C038863:gallium oxide; D005708:Gallium