title: Chemical mapping of individual semiconductor nanostructures.
abstract: We demonstrate experimentally the power of a novel analytical tool for X-ray spectromicroscopy. This provides a minimally intrusive elemental mapping of surfaces at the nanoscale and holds the promise of remarkable versatility. We have applied our procedure to the characterization of Ge(Si) islands on Si(111) substrates, with the aim of investigating the surface stoichiometry gradients and gaining insight into the intermixing dynamics. By identifying Si-richer edges with respect to the centers, we are able to associate alloying in these islands to surface transport processes.
authors.affiliation: INRS Energie, Matériaux et Télécommunications, Université du Québec, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, QC, Canada.
authors.forename: Fulvio
authors.initials: F
authors.lastname: Ratto
authors.forename: Andrea
authors.initials: A
authors.lastname: Locatelli
authors.forename: Stefano
authors.initials: S
authors.lastname: Fontana
authors.forename: Sharmin
authors.initials: S
authors.lastname: Kharrazi
authors.forename: Shriwas
authors.initials: S
authors.lastname: Ashtaputre
authors.forename: Sulabha K
authors.initials: SK
authors.lastname: Kulkarni
authors.forename: Stefan
authors.initials: S
authors.lastname: Heun
authors.forename: Federico
authors.initials: F
authors.lastname: Rosei
mesh_terms: D000465:Algorithms; D003198:Computer Simulation; D004577:Electron Probe Microanalysis / Q000379:methods*; D008422:Materials Testing / Q000379:methods*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012666:Semiconductors; D013052:Spectrometry, X-Ray Emission / Q000379:methods*