title: Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors.
abstract: A convenient process for generating large-scale, horizontally aligned arrays of pristine, single-walled carbon nanotubes (SWNTs) is described. The approach uses guided growth, by chemical vapor deposition (CVD), of SWNTs on miscut single-crystal quartz substrates. Studies of the growth reveal important relationships between the density and alignment of the tubes, the CVD conditions, and the morphology of the quartz. Electrodes and dielectrics patterned on top of these arrays yield thin-film transistors that use the SWNTs as effective thin-film semiconductors. The ability to build high-performance devices of this type suggests significant promise for large-scale aligned arrays of SWNTs in electronics, sensors, and other applications.
authors.affiliation: Department of Physics, University of Illinois at Urbana/Champaign, USA.
authors.forename: Coskun
authors.initials: C
authors.lastname: Kocabas
authors.forename: Seung-Hyun
authors.initials: SH
authors.lastname: Hur
authors.forename: Anshu
authors.initials: A
authors.lastname: Gaur
authors.forename: Matthew A
authors.initials: MA
authors.lastname: Meitl
authors.forename: Moonsub
authors.initials: M
authors.lastname: Shim
authors.forename: John A
authors.initials: JA
authors.lastname: Rogers
mesh_terms: D016880:Anisotropy; D003460:Crystallization; D004563:Electrochemistry; D004583:Electrons; D018625:Microscopy, Atomic Force; D018613:Microscopy, Confocal; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013059:Spectrum Analysis, Raman; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D012822:Silicon Dioxide; D012825:Silicon