Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement.
Hormozi Nezhad
Mohammad R
MR
Department of Chemistry, University of Alberta, Edmonton, AB T6G 2G2, Canada.
Aizawa
Masato
M
Porter
Lon A
LA
Ribbe
Alexander E
AE
Buriak
Jillian M
JM
D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D006046:Gold / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007477:Ions; D053768:Metal Nanoparticles / Q000737:chemistry*; D008670:Metals / Q000737:chemistry; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D009584:Nitrogen / Q000737:chemistry; D010720:Phosphines / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D013499:Surface Properties; D013501:Surface-Active Agents
D001152:Arsenicals; D007477:Ions; D008670:Metals; D010720:Phosphines; D013501:Surface-Active Agents; D007204:Indium; C043055:gallium arsenide; D006046:Gold; D005708:Gallium; D009584:Nitrogen; C090882:indium phosphide; D012825:Silicon