title: Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor.
abstract: Thin films ( approximately 30 nm) of amorphous RuP alloys (P approximately 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 degrees C and 200 mTorr pressure on native SiO2.
authors.affiliation: Texas Materials Institute, University of Texas at Austin, Austin, TX 78750, USA.
authors.forename: Jinhong
authors.initials: J
authors.lastname: Shin
authors.forename: Abdul
authors.initials: A
authors.lastname: Waheed
authors.forename: Kyriacos
authors.initials: K
authors.lastname: Agapiou
authors.forename: Wyatt A
authors.initials: WA
authors.lastname: Winkenwerder
authors.forename: Hyun-Wu
authors.initials: HW
authors.lastname: Kim
authors.forename: Richard A
authors.initials: RA
authors.lastname: Jones
authors.forename: Gyeong S
authors.initials: GS
authors.lastname: Hwang
authors.forename: John G
authors.initials: JG
authors.lastname: Ekerdt
mesh_terms: D008567:Membranes, Artificial; D009942:Organometallic Compounds / Q000737:chemistry*; D010316:Particle Size; D010758:Phosphorus / Q000737:chemistry*; D012428:Ruthenium / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
chemical_list: D008567:Membranes, Artificial; D009942:Organometallic Compounds; D010758:Phosphorus; D012428:Ruthenium