title: High electron mobility InAs nanowire field-effect transistors.
abstract: Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier field-effect mobility and carrier concentration by taking into account series and leakage resistances, interface state capacitance, and top-gate geometry. Both the back-gate and the top-gate NWFETs exhibit room-temperature field-effect mobility as high as 6580 cm(2) V(-1) s(-1), which is the lower-bound value without interface-capacitance correction, and is the highest mobility reported to date in any semiconductor NW.
authors.affiliation: Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, USA.
authors.forename: Shadi A
authors.initials: SA
authors.lastname: Dayeh
authors.forename: David P R
authors.initials: DP
authors.lastname: Aplin
authors.forename: Xiaotian
authors.initials: X
authors.lastname: Zhou
authors.forename: Paul K L
authors.initials: PK
authors.lastname: Yu
authors.forename: Edward T
authors.initials: ET
authors.lastname: Yu
authors.forename: Deli
authors.initials: D
authors.lastname: Wang
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; C076773:indium arsenide