Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers.
The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of -50 degrees C.
Siskaninetz
W J
WJ
Air Force Research Laboratory and Electrical and Computer Engineering Department, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA.
Ehret
J E
JE
Albrecht
J D
JD
Bedford
R G
RG
Nelson
T R
TR
Lott
J A
JA