title: Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices.
abstract: We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setup allows the determination of the effective transverse and longitudinal piezoelectric coefficients e31,f and d33,f, respectively. Additionally, the dielectric coefficient and the large signal electrical polarization are measured to add further important characteristics of the film. These data are essential for piezoelectric thin film process specification and the design and qualification of microelectromechanical systems devices.
authors.affiliation: aixACCT Systems GmbH, Aachen, Germany. prume@aixacct.com
authors.forename: Klaus
authors.initials: K
authors.lastname: Prume
authors.forename: Paul
authors.initials: P
authors.lastname: Muralt
authors.forename: Florian
authors.initials: F
authors.lastname: Calame
authors.forename: Thorsten
authors.initials: T
authors.lastname: Schmitz-Kempen
authors.forename: Stephan
authors.initials: S
authors.lastname: Tiedke
mesh_terms: D003198:Computer Simulation; D004548:Elasticity; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000295:instrumentation* / Q000379:methods; D008422:Materials Testing / Q000295:instrumentation* / Q000379:methods; D019563:Mechanics; D008567:Membranes, Artificial; D008956:Models, Chemical; D013314:Stress, Mechanical; D014159:Transducers; D014463:Ultrasonography / Q000295:instrumentation* / Q000379:methods
chemical_list: D008567:Membranes, Artificial