Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the GaAs nanowires were grown along <111> directions on both Si substrates for growth conditions investigated. The GaAs nanowires had a very uniform diameter along the growth direction. X-ray diffraction data and transmission electron microscopy analysis revealed that the GaAs<111> nanowires had a mixed crystal structure of the hexagonal wurtzite and the cubic zinc-blende. Current-voltage characteristics of junctions formed by the epitaxially grown GaAs nanowires and the Si substrate were investigated by using a current-sensing atomic force microscopy.
Ihn
Soo-Ghang
SG
Center for Distributed Sensor Networks, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea.
Song
Jong-In
JI
Kim
Tae-Wook
TW
Leem
Dong-Seok
DS
Lee
Takhee
T
Lee
Sang-Geul
SG
Koh
Eui Kwan
EK
Song
Kyung
K
D001152:Arsenicals / Q000737:chemistry*; D018360:Crystallography, X-Ray; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D053770:Nanowires; D012825:Silicon / Q000737:chemistry*
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D012825:Silicon