Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices.
We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setup allows the determination of the effective transverse and longitudinal piezoelectric coefficients e31,f and d33,f, respectively. Additionally, the dielectric coefficient and the large signal electrical polarization are measured to add further important characteristics of the film. These data are essential for piezoelectric thin film process specification and the design and qualification of microelectromechanical systems devices.
Prume
Klaus
K
aixACCT Systems GmbH, Aachen, Germany. prume@aixacct.com
Muralt
Paul
P
Calame
Florian
F
Schmitz-Kempen
Thorsten
T
Tiedke
Stephan
S
D003198:Computer Simulation; D004548:Elasticity; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000295:instrumentation* / Q000379:methods; D008422:Materials Testing / Q000295:instrumentation* / Q000379:methods; D019563:Mechanics; D008567:Membranes, Artificial; D008956:Models, Chemical; D013314:Stress, Mechanical; D014159:Transducers; D014463:Ultrasonography / Q000295:instrumentation* / Q000379:methods
D008567:Membranes, Artificial