Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.
InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements. It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strength of the internal (built-in) electric field, which could be altered by an additional infrared illumination of the sample. The observed effects are explained by a model that accounts for the essentially faster lateral transport of the photoexcited carriers achieved in an electric field.
Moskalenko
Evgenii S
ES
Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden.
Larsson
Mats
M
Karlsson
K Fredrik
KF
Holtz
Per Olof
PO
Monemar
Bo
B
Schoenfeld
Winston V
WV
Petroff
Pierre M
PM
D001152:Arsenicals / Q000737:chemistry*; D004574:Electromagnetic Fields; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D049449:Luminescence; D011789:Quantum Theory
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide