title: High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer.
abstract: Individual single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with a 2 nm thick silane-based organic self-assembled monolayer (SAM) gate dielectric have been manufactured. The FETs exhibit a unique combination of excellent device performance parameters. In particular, they operate with a gate-source voltage of only -1 V and exhibit good saturation, large transconductance, and small hysteresis (<or=100 mV), as well as a very low subthreshold swing (60 mV/dec) under ambient conditions. The SAM-based gate dielectric opens the possibility of fabricating transistors operating at low voltages and constitutes a major step toward nanotube-based flexible electronics.
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany.
authors.forename: Ralf Thomas
authors.initials: RT
authors.lastname: Weitz
authors.forename: Ute
authors.initials: U
authors.lastname: Zschieschang
authors.forename: Franz
authors.initials: F
authors.lastname: Effenberger
authors.forename: Hagen
authors.initials: H
authors.lastname: Klauk
authors.forename: Marko
authors.initials: M
authors.lastname: Burghard
authors.forename: Klaus
authors.initials: K
authors.lastname: Kern
mesh_terms: D004560:Electricity; D018625:Microscopy, Atomic Force; D037742:Nanotubes, Carbon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D037742:Nanotubes, Carbon; D012822:Silicon Dioxide