title: Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.
abstract: InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements. It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strength of the internal (built-in) electric field, which could be altered by an additional infrared illumination of the sample. The observed effects are explained by a model that accounts for the essentially faster lateral transport of the photoexcited carriers achieved in an electric field.
authors.affiliation: Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden.
authors.forename: Evgenii S
authors.initials: ES
authors.lastname: Moskalenko
authors.forename: Mats
authors.initials: M
authors.lastname: Larsson
authors.forename: K Fredrik
authors.initials: KF
authors.lastname: Karlsson
authors.forename: Per Olof
authors.initials: PO
authors.lastname: Holtz
authors.forename: Bo
authors.initials: B
authors.lastname: Monemar
authors.forename: Winston V
authors.initials: WV
authors.lastname: Schoenfeld
authors.forename: Pierre M
authors.initials: PM
authors.lastname: Petroff
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004574:Electromagnetic Fields; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D049449:Luminescence; D011789:Quantum Theory
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide