title: ALD resist formed by vapor-deposited self-assembled monolayers.
abstract: A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-octadecene on hydrogen-passivated silicon surfaces through a low-pressure chemical vapor deposition process. X-ray photoelectron spectroscopy data indicates that surfaces blocked by these monolayer resists can prevent atomic layer deposition of both HfO2 and Pt successfully. Time-dependent studies show that the ODTS monolayers continue to improve in blocking ability for as long as 48 h of formation time, and infrared spectroscopy measurements confirm an evolution of packing order over these time scales.
authors.affiliation: Department of Chemical Engineering and Department of Material Science and Engineering, Stanford University, Stanford, CA 94305, USA.
authors.forename: Junsic
authors.initials: J
authors.lastname: Hong
authors.forename: David W
authors.initials: DW
authors.lastname: Porter
authors.forename: Raghavasimhan
authors.initials: R
authors.lastname: Sreenivasan
authors.forename: Paul C
authors.initials: PC
authors.lastname: McIntyre
authors.forename: Stacey F
authors.initials: SF
authors.lastname: Bent