Preparation of taN thin film by H2 plasma assisted atomic layer deposition using tert-butylimino-tris-ethylmethylamino tantalum.
The plasma assisted atomic layer deposition (ALD) of tantalum nitride (TaN) thin films were conducted using tert-butylimino-tris-ethylmethylamino tantalum (TBTEMAT) and hydrogen plasma at 250 degrees C. The effects of H2-plasma pulse time and RF power on the film properties, such as resistivity, surface roughness, step coverage and stability in air, were examined. The film growth rate (thickness/cycle) was in the range of 0.05-0.08 nm/cycle and the resistivity of the films varied from 490 to 70,000 microomega cm, depending on the plasma conditions. Longer plasma pulse times and increasing RF power yielded films of lower resistivity along with improving the stability. The films were smooth and the conformality of the films deposited in 0.28 microm holes with an aspect ratio of 7:1 was 100%.
Kim
Deung-Kwan
DK
Faculty of Applied Chemical Engineering and Research Institute for Catalysis, Chonnam National University, Gwangju 500-757, Korea.
Kim
Bo-Hye
BH
Woo
Hee-Gweon
HG
Kim
Do-Heyoung
DH
Shin
Hyun Koock
HK
D000388:Air; D006859:Hydrogen / Q000737:chemistry; D006860:Hydrogen Bonding; D008422:Materials Testing; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D053758:Nanoparticles / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry; D013635:Tantalum / Q000737:chemistry*; D013696:Temperature; D013997:Time Factors; D014961:X-Ray Diffraction
D013635:Tantalum; D006859:Hydrogen; D012825:Silicon