Carbon nanotube multi-channeled field-effect transistors.
Field-effect transistors (FETs) with multiple channels of single-wall carbon nanotubes (SWCNTs) have been constructed. SWCNT channels of the FETs are dispersedly aligned between the source and the drain by electric-field manipulation of surface decorated SWCNTs. The obtained multichanneled FETs not only can meet the requirement of large output current and high transconductance, but also manifested good reliability and applicability. It is found that the transconductance of the multi-channel FET has an almost linear dependency on the SWCNT channel number, which opens up a promising way to tune the transconductance of FETs by controlling the channel number.
Chen
Changxin
C
National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, PR China.
Zhang
Yafei
Y
D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D037742:Nanotubes, Carbon