title: InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm.
abstract: A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
authors.forename: J Y
authors.initials: JY
authors.lastname: Huang
authors.forename: H C
authors.initials: HC
authors.lastname: Liang
authors.forename: K W
authors.initials: KW
authors.lastname: Su
authors.forename: H C
authors.initials: HC
authors.lastname: Lai
authors.forename: Y-F
authors.initials: YF
authors.lastname: Chen
authors.forename: K F
authors.initials: KF
authors.lastname: Huang