Electronic structure of P-doped ZnO films with p-type conductivity.
The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p-P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating P(O). This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.
Vaithianathan
Veeramuthu
V
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500 757, Korea.
Moon
Jong Ha
JH
Chang
Chang-Hwan
CH
Asokan
Kandasami
K
Kim
Sang Sub
SS
D002138:Calibration; D004553:Electric Conductivity; D004581:Electronics; D004583:Electrons; D007834:Lasers; D036103:Nanotechnology / Q000379:methods*; D010100:Oxygen / Q000737:chemistry; D010758:Phosphorus; D017785:Photons; D013053:Spectrophotometry; D013696:Temperature; D014965:X-Rays; D015032:Zinc / Q000737:chemistry; D017967:Zinc Compounds / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
D017967:Zinc Compounds; D010758:Phosphorus; D015032:Zinc; D010100:Oxygen; D015034:Zinc Oxide