Deposition of CuInS2 thin films using copper- and indium/sulfide-containing precursors through a two-stage MOCVD method.
Copper indium disulfide (CuInS2; CIS) films were deposited on various substrates by two-stage metal-organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cu- and In/S-containing precursors without toxic H2S gas: first, a pure Cu thin film was prepared on glass or indium/tin oxide glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II); second, on the resulting Cu film, tris(N,N-ethylbutyldithiocarbamato)indium(III) was treated to produce CIS films by a MOCVD method at 430 degrees C. In this process, their thicknesses and stoichiometries were found to be elaborately controlled on demand by adjusting the process conditions. The optical band gap of the stoichiometric CIS film was about 1.41 eV, which is in the near-optimal range for harvesting solar radiation energy.
Lee
Seung Soo
SS
Department of Chemistry, Chung-Ang University, Seoul 156-756, Korea.
Seo
Kook Won
KW
Park
Jong Pil
JP
Kim
Sin Kyu
SK
Shim
Il-Wun
IW