Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.
We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.
Kwak
Joon Seop
JS
Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea.
Song
J O
JO
Seong
T Y
TY
Kim
B I
BI
Cho
J
J
Sone
C
C
Park
Y
Y
D004563:Electrochemistry; D004566:Electrodes; D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D053758:Nanoparticles / Q000737:chemistry*; D009532:Nickel / Q000737:chemistry; D012834:Silver / Q000737:chemistry; D013696:Temperature; D015032:Zinc / Q000737:chemistry
C473348:gallium nitride; D012834:Silver; D009532:Nickel; D005708:Gallium; D015032:Zinc