title: Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.
abstract: We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.
authors.affiliation: Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea.
authors.forename: Joon Seop
authors.initials: JS
authors.lastname: Kwak
authors.forename: J O
authors.initials: JO
authors.lastname: Song
authors.forename: T Y
authors.initials: TY
authors.lastname: Seong
authors.forename: B I
authors.initials: BI
authors.lastname: Kim
authors.forename: J
authors.initials: J
authors.lastname: Cho
authors.forename: C
authors.initials: C
authors.lastname: Sone
authors.forename: Y
authors.initials: Y
authors.lastname: Park
mesh_terms: D004563:Electrochemistry; D004566:Electrodes; D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D053758:Nanoparticles / Q000737:chemistry*; D009532:Nickel / Q000737:chemistry; D012834:Silver / Q000737:chemistry; D013696:Temperature; D015032:Zinc / Q000737:chemistry
chemical_list: C473348:gallium nitride; D012834:Silver; D009532:Nickel; D005708:Gallium; D015032:Zinc