title: Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams.
abstract: We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for approximately 1 mum long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs through the axial drift of a single M-I domain wall driven by Joule heating and the Peltier effect.
authors.affiliation: Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA..
authors.forename: Qian
authors.initials: Q
authors.lastname: Gu
authors.forename: Abram
authors.initials: A
authors.lastname: Falk
authors.forename: Junqiao
authors.initials: J
authors.lastname: Wu
authors.forename: Lian
authors.initials: L
authors.lastname: Ouyang
authors.forename: Hongkun
authors.initials: H
authors.lastname: Park