title: Electronic properties of Si and Ge atoms doped in clusters: In(n)Si(m) and In(n)Ge(m).
abstract: Electronic properties of silicon and germanium atom doped indium clusters, In(n)Si(m) and In(n)Ge(m), were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for In(n)Si(1) and In(n)Ge(1) exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In(n) clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the 1d shell formed by monovalent In atoms.
authors.affiliation: Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi, Yokohama 223-8522, Japan.
authors.forename: Minoru
authors.initials: M
authors.lastname: Akutsu
authors.forename: Kiichirou
authors.initials: K
authors.lastname: Koyasu
authors.forename: Junko
authors.initials: J
authors.lastname: Atobe
authors.forename: Ken
authors.initials: K
authors.lastname: Miyajima
authors.forename: Masaaki
authors.initials: M
authors.lastname: Mitsui
authors.forename: Atsushi
authors.initials: A
authors.lastname: Nakajima