title: Large scale synthesis of highly pure single crystalline tellurium nanowires by thermal evaporation method.
abstract: Single crystalline tellurium nanowires were successfully synthesized in large scale by a facile approach of vaporizing tellurium metal and condensing the vapor in an inert atmosphere onto a Si substrate. Tellurium was evaporated by heating at 300 degrees C at 1 torr and condensed on the Si substrate at 100-150 degrees C, in the downstream of argon (Ar) gas at a flow rate of 25 sccm for 30 min. The as-synthesized nanowires have diameters between 100-300 nm and lengths up to several micrometers. The single crystalline nanowires grew in a preferred [0001] direction. The obtained nanowires were highly pure as only tellurium metal was used in the vaporization process, and no other reagent, surfactant, or template were used for the growth. This low temperature and high-yield approach to the tellurium nanowires synthesis may facilitate its industrial production for various applications.
authors.affiliation: Department of Chemistry, KAIST Daejeon 305-701, Korea.
authors.forename: Paritosh
authors.initials: P
authors.lastname: Mohanty
authors.forename: Jeunghee
authors.initials: J
authors.lastname: Park
authors.forename: Bongsoo
authors.initials: B
authors.lastname: Kim
mesh_terms: D016880:Anisotropy; D001128:Argon / Q000737:chemistry; D003460:Crystallization; D006358:Hot Temperature; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry*; D049329:Nanostructures; D036103:Nanotechnology / Q000379:methods; D053770:Nanowires / Q000737:chemistry*; D017785:Photons; D013501:Surface-Active Agents; D013691:Tellurium / Q000737:chemistry*; D013696:Temperature; D014961:X-Ray Diffraction
chemical_list: D013501:Surface-Active Agents; D001128:Argon; D013691:Tellurium