Simulation study on heat conduction of a nanoscale phase-change random access memory cell.
We have investigated heat transfer characteristics of a nano-scale phase-change random access memory (PRAM) cell using finite element method (FEM) simulation. Our PRAM cell is based on ternary chalcogenide alloy, Ge2Sb2Te5 (GST), which is used as a recording layer. For contact area of 100 x 100 nm2, simulations of crystallization and amorphization processes were carried out. Physical quantities such as electric conductivity, thermal conductivity, and specific heat were treated as temperature-dependent parameters. Through many simulations, it is concluded that one can reduce set current by decreasing both electric conductivities of amorphous GST and crystalline GST, and in addition to these conditions by decreasing electric conductivity of molten GST one can also reduce reset current significantly.
Kim
Junho
J
Department of Physics, University of Incheon, Incheon, 402-749, Korea.
Song
Ki-Bong
KB
D000497:Alloys / Q000737:chemistry*; D003198:Computer Simulation; D003201:Computers; D003460:Crystallization; D004553:Electric Conductivity; D004867:Equipment Design; D020342:Finite Element Analysis; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D012984:Software; D013696:Temperature; D013814:Thermal Conductivity; D013816:Thermodynamics; D013997:Time Factors
D000497:Alloys