InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm.
A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.
Huang
J Y
JY
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
Liang
H C
HC
Su
K W
KW
Lai
H C
HC
Chen
Y-F
YF
Huang
K F
KF