Theoretical study on controllability of quantum state energy in an InGaAs/GaAs quantum dot buried in InGaAs.
We theoretically studied the relationship between quantum energy states and structural parameters of an InGaAs/GaAs quantum dot (QD) buried in strained InGaAs, emitting at 1.1 to 1.4 em. The crystal distortion of the buried QD structure in three dimensions was computed based on the three-dimensional finite element method. Under the computed strain fields, the Schrödinger equation was solved to obtain wavefunctions and eigenenergies. By calculating the dependence on structural parameters, we investigated the controllable range of the ground state energy and the energy separation between the ground state and the first excited state. We found that the energy separation exhibited a maximum value as a function of QD composition, enabling us to identify the composition of the QD structure. The effects of the burying layer composition and QD diameter were also investigated to expand the controllable range of the state energy. We also showed that the wavefunction symmetry was improved by burying the QD in the InGaAs layer. Our results will be useful in developing advanced devices for optical telecommunications and quantum information technology.
Mukai
Kohki
K
Yokohama National University, 79-5, Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan.
Nakashima
Kenta
K
D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D003198:Computer Simulation; D004307:Dose-Response Relationship, Radiation; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D018499:Linear Energy Transfer / Q000528:radiation effects; D008956:Models, Chemical; D008958:Models, Molecular; D045663:Quantum Dots; D011829:Radiation Dosage; D012666:Semiconductors
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide