title: Electronic structure of P-doped ZnO films with p-type conductivity.
abstract: The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p-P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating P(O). This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.
authors.affiliation: Department of Materials Science and Engineering, Chonnam National University, Gwangju 500 757, Korea.
authors.forename: Veeramuthu
authors.initials: V
authors.lastname: Vaithianathan
authors.forename: Jong Ha
authors.initials: JH
authors.lastname: Moon
authors.forename: Chang-Hwan
authors.initials: CH
authors.lastname: Chang
authors.forename: Kandasami
authors.initials: K
authors.lastname: Asokan
authors.forename: Sang Sub
authors.initials: SS
authors.lastname: Kim
mesh_terms: D002138:Calibration; D004553:Electric Conductivity; D004581:Electronics; D004583:Electrons; D007834:Lasers; D036103:Nanotechnology / Q000379:methods*; D010100:Oxygen / Q000737:chemistry; D010758:Phosphorus; D017785:Photons; D013053:Spectrophotometry; D013696:Temperature; D014965:X-Rays; D015032:Zinc / Q000737:chemistry; D017967:Zinc Compounds / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D017967:Zinc Compounds; D010758:Phosphorus; D015032:Zinc; D010100:Oxygen; D015034:Zinc Oxide