Response analysis for identifying the origin of photo-modulated current contrasts in scanning tunneling microscopic imaging semiconductor surfaces.
Inhomogeneities in semiconductor solids can be imaged by two-dimensional mapping of the amplitude of periodically modulated tip current in scanning tunneling microscopy that is induced by illumination of semiconductor samples with a chopped light. It has been shown that it is possible to distinguish between plural origins of the photo-modulated current by analyzing the response properties of the current signal. A judicial choice of the modulation frequency is important for the required contrasts to be obtained.
Naruse
Nobuyasu
N
Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. naruse@exp.t.u-tokyo.ac.jp
Mera
Yutaka
Y
Hayashida
Yukinobu
Y
Maeda
Koji
K