title: ZnO-nanowire-inserted GaN/ZnO heterojunction light-emitting diodes.
authors.affiliation: Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Korea.
authors.forename: Min-Chang
authors.initials: MC
authors.lastname: Jeong
authors.forename: Byeong-Yun
authors.initials: BY
authors.lastname: Oh
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Ham
authors.forename: Sang-Won
authors.initials: SW
authors.lastname: Lee
authors.forename: Jae-Min
authors.initials: JM
authors.lastname: Myoung
mesh_terms: D004553:Electric Conductivity; D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D008274:Magnesium / Q000737:chemistry; D053768:Metal Nanoparticles / Q000737:chemistry; D008670:Metals; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry*; D010777:Photochemistry / Q000379:methods; D013696:Temperature; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D008670:Metals; C473348:gallium nitride; D005708:Gallium; D008274:Magnesium; D015034:Zinc Oxide