title: Landé g tensor in semiconductor nanostructures.
abstract: Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing mapping of the g-tensor modulus for the s and p shells. We find that the g tensors for the s and p shells exhibit a very different behavior. The s state, being more localized, probes the confinement potential details by sweeping the magnetic-field orientation from the growth direction towards the in-plane direction. For the p state, the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. In addition to the assessment of the g tensor, these results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed.
authors.affiliation: Laboratório Nacional de Luz Síncrotron, Caixa Postal 6192, CEP 13084-971, Campinas, SP, Brazil.
authors.forename: T P Mayer
authors.initials: TP
authors.lastname: Alegre
authors.forename: F G G
authors.initials: FG
authors.lastname: Hernández
authors.forename: A L C
authors.initials: AL
authors.lastname: Pereira
authors.forename: G
authors.initials: G
authors.lastname: Medeiros-Ribeiro