title: Stability of silicon-doped C60 dimers.
abstract: A theoretical investigation on the structure, stability, and thermal behaviors of the smallest polymeric units, the dimers, formed from substitutionally Si-doped fullerenes is presented. A density functional based nonorthogonal tight-binding model has been employed for describing the interatomic interactions. The study focuses on those polymeric structures which involve Si-Si or Si-C interfullerene bonds. The binding energy of the dimers increases with their Si content from about 0.25 eV in C(60)-C(60) to about 4.5 eV in C(58)Si(2)-C(58)Si(2). Moreover, the C(59)SiC(59) dimer, linked through the sharing of the Si atom between the two fullerenes, has been also considered. Upon heating, the dimers eventually fragment into their constituent fullerene units. The fragmentation temperature correlates with the strength of the interfullerene bonds. C(58)Si(2)-C(58)Si(2) exhibits a higher thermal stability (fragmentation temperature of approximately 500 K) than the pure carbon C(60)-C(60) dimer (with a fragmentation temperature of approximately 325 K). Given the higher structural and thermal stabilities of the Si-doped fullerene dimers, the authors propose the use of substitutionally Si-doped fullerenes as the basic units for constructing new fullerene-based polymers.
authors.affiliation: Departamento de Física, Universidad de Burgos, 09001 Burgos, Spain.
authors.forename: Pedro A
authors.initials: PA
authors.lastname: Marcos
authors.forename: Julio A
authors.initials: JA
authors.lastname: Alonso
authors.forename: María J
authors.initials: MJ
authors.lastname: López