title: Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays.
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany. dskim@mpi-halle.de
authors.forename: Dong Sik
authors.initials: DS
authors.lastname: Kim
authors.forename: Ran
authors.initials: R
authors.lastname: Ji
authors.forename: Hong Jin
authors.initials: HJ
authors.lastname: Fan
authors.forename: Frank
authors.initials: F
authors.lastname: Bertram
authors.forename: Roland
authors.initials: R
authors.lastname: Scholz
authors.forename: Armin
authors.initials: A
authors.lastname: Dadgar
authors.forename: Kornelius
authors.initials: K
authors.lastname: Nielsch
authors.forename: Alois
authors.initials: A
authors.lastname: Krost
authors.forename: Jürgen
authors.initials: J
authors.lastname: Christen
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele
authors.forename: Margit
authors.initials: M
authors.lastname: Zacharias
mesh_terms: D003460:Crystallization / Q000379:methods*; D007834:Lasers; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D046911:Macromolecular Substances; D015034:Zinc Oxide