title: Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance.
abstract: An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
authors.affiliation: Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan. marumoto@ims.tsukuba.ac.jp
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Marumoto
authors.forename: Shin-ichi
authors.initials: S
authors.lastname: Kuroda
authors.forename: Taishi
authors.initials: T
authors.lastname: Takenobu
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Iwasa