Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 microm.
We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and 532 nm wavelength light from a Nd:YAG laser with a 130 ps pulse width were used to generate free carriers in the samples. Reflectance and transmittance were measured at a 10.6 microm wavelength using a linearly polarized CO2 laser.
Toyoda
Yoshimasa
Y
Department of Physics and Astronomy, University of Hawaii at Manoa, Hawaii 96822, USA. toyoda@hawaii.edu
Elias
Luis R
LR
Yen
William M
WM