title: Atomistic mechanism of boron diffusion in silicon.
abstract: B diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length lambda. We experimentally demonstrate that both g and lambda strongly depend on the free hole concentration p. At low p, g has a constant trend and lambda increases with p, while at high p, g has a superlinear trend and lambda decreases with p. This demonstrates that BI forms in the two regimes by interaction with neutral and double positive I, respectively, and its charge state has to change by interaction with free holes before diffusing.
authors.affiliation: MATIS INFM-CNR and Padova University, Physics Department, via Marzolo 8, 35131 Padova, Italy. desalvador@padova.infm.it
authors.forename: Davide
authors.initials: D
authors.lastname: De Salvador
authors.forename: Enrico
authors.initials: E
authors.lastname: Napolitani
authors.forename: Salvatore
authors.initials: S
authors.lastname: Mirabella
authors.forename: Gabriele
authors.initials: G
authors.lastname: Bisognin
authors.forename: Giuliana
authors.initials: G
authors.lastname: Impellizzeri
authors.forename: Alberto
authors.initials: A
authors.lastname: Carnera
authors.forename: Francesco
authors.initials: F
authors.lastname: Priolo