title: Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.
abstract: Field effect transistors with ferroelectric gates would make ideal rewritable nonvolatile memories were it not for the severe problems in integrating the ferroelectric oxide directly on the semiconductor channel. We propose a powerful way to avoid these problems using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor (Cd,Zn)Te films is proven and studied using modified piezoforce scanning probe microscopy. Then, a rewritable field effect device is demonstrated by local poling of the (Cd,Zn)Te layer of a (Cd,Zn)Te/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas. The results point to a potential new family of nanoscale one-transistor memories.
authors.affiliation: Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland.
authors.forename: Igor
authors.initials: I
authors.lastname: Stolichnov
authors.forename: Enrico
authors.initials: E
authors.lastname: Colla
authors.forename: Nava
authors.initials: N
authors.lastname: Setter
authors.forename: Tomasz
authors.initials: T
authors.lastname: Wojciechowski
authors.forename: Elzbieta
authors.initials: E
authors.lastname: Janik
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Karczewski