Temperature-dependent growth direction of ultrathin ZnSe nanowires.
Cai
Yuan
Y
Department of Physics and the Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
Chan
Siu Keung
SK
Sou
Iam Keong
IK
Chan
Yu Fai
YF
Su
Dang Sheng
DS
Wang
Ning
N
D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring; D004563:Electrochemistry / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D018036:Selenium Compounds / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties; D017967:Zinc Compounds / Q000737:chemistry*
D046911:Macromolecular Substances; D018036:Selenium Compounds; D017967:Zinc Compounds; C044696:zinc selenide