Nitrogen-doped tungsten oxide nanowires: low-temperature synthesis on Si, and electrical, optical, and field-emission properties.
Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO(3) nanowires on Si in large quantities. The direct fabrication of WO(3)-based nanodevices on Si has been demonstrated.
Chang
Mu-Tung
MT
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
Chou
Li-Jen
LJ
Chueh
Yu-Lun
YL
Lee
Yu-Chen
YC
Hsieh
Chin-Hua
CH
Chen
Chii-Dong
CD
Lan
Yann-Wen
YW
Chen
Lih-Juann
LJ
D004553:Electric Conductivity; D008027:Light; D049449:Luminescence; D053768:Metal Nanoparticles / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008956:Models, Chemical; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013696:Temperature; D014414:Tungsten / Q000737:chemistry*; D014961:X-Ray Diffraction
D010087:Oxides; C511604:tungsten oxide; D009584:Nitrogen; D014414:Tungsten; D012825:Silicon