The focusing of electron flow and a Veselago lens in graphene p-n junctions.
The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.
Cheianov
Vadim V
VV
Physics Department, Lancaster University, Lancaster LA1 4YB, UK. v.cheianov@lancaster.ac.uk
Fal'ko
Vladimir
V
Altshuler
B L
BL