Raman spectral probing of electronic transition energy Eii variation of individual SWNTs under torsional strain.
We present herein a rational approach to probe the torsional strain-induced electronic transition energy Eii variation of individual SWNTs by resonant Raman spectroscopy (RRS). When a SWNT was manipulated by AFM tip through a path perpendicular to SWNT axis, both torsional and uniaxial strain would be introduced in SWNTs. Under the torsional strain, resonant Raman spectral mapping along a SWNT detected an M-shaped frequency (omegaRBM) and W-shaped intensity (IS) variation of radial breathing mode (RBM) spectra, which were induced by the elastic retraction of the nanotubes in combination with the friction after the tip has been removed. The electronic transition energy Eii variation along SWNTs by torsional strain follows a family pattern based on q=(n - m) mod 3: for semiconducting SWNTs, E33S increases for q=+1, E33S decreases and E22S increases for q=-1, and for metallic SWNTs, E11M always increases.
Gao
Bo
B
College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
Duan
Xiaojie
X
Zhang
Jin
J
Wu
Tianjiao
T
Son
Hyungbin
H
Kong
Jing
J
Liu
Zhongfan
Z