Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.
The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.
Neff
Petra A
PA
Lehrstuhl für Biophysik-E22, Technische Universität München, Germany, and Stranski-Laboratorium, Technische Universität Berlin, Germany.
Wunderlich
Bernhard K
BK
Klitzing
Regine V
RV
Bausch
Andreas R
AR
D017097:Electric Impedance; D008567:Membranes, Artificial; D011108:Polymers; D012825:Silicon; D012822:Silicon Dioxide
D008567:Membranes, Artificial; D011108:Polymers; D012822:Silicon Dioxide; D012825:Silicon