title: Nitrogen-doped tungsten oxide nanowires: low-temperature synthesis on Si, and electrical, optical, and field-emission properties.
abstract: Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO(3) nanowires on Si in large quantities. The direct fabrication of WO(3)-based nanodevices on Si has been demonstrated.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
authors.forename: Mu-Tung
authors.initials: MT
authors.lastname: Chang
authors.forename: Li-Jen
authors.initials: LJ
authors.lastname: Chou
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.forename: Yu-Chen
authors.initials: YC
authors.lastname: Lee
authors.forename: Chin-Hua
authors.initials: CH
authors.lastname: Hsieh
authors.forename: Chii-Dong
authors.initials: CD
authors.lastname: Chen
authors.forename: Yann-Wen
authors.initials: YW
authors.lastname: Lan
authors.forename: Lih-Juann
authors.initials: LJ
authors.lastname: Chen
mesh_terms: D004553:Electric Conductivity; D008027:Light; D049449:Luminescence; D053768:Metal Nanoparticles / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008956:Models, Chemical; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013696:Temperature; D014414:Tungsten / Q000737:chemistry*; D014961:X-Ray Diffraction
chemical_list: D010087:Oxides; C511604:tungsten oxide; D009584:Nitrogen; D014414:Tungsten; D012825:Silicon