title: Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN.
abstract: The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10(17) cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.
authors.affiliation: Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan.
authors.forename: Masato
authors.initials: M
authors.lastname: Ono
authors.forename: Katsushi
authors.initials: K
authors.lastname: Fujii
authors.forename: Takashi
authors.initials: T
authors.lastname: Ito
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Iwaki
authors.forename: Akira
authors.initials: A
authors.lastname: Hirako
authors.forename: Takafumi
authors.initials: T
authors.lastname: Yao
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Ohkawa