title: Interplay between fermi surface topology and ordering in URu2Si2 revealed through abrupt hall coefficient changes in strong magnetic fields.
abstract: Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the "hidden order," the degree of polarization of the Fermi liquid, and the Fermi surface topology.
authors.affiliation: CSCMR & FPRD, School of Physics and Astronomy, Seoul National University, Seoul, South Korea.
authors.forename: Y S
authors.initials: YS
authors.lastname: Oh
authors.forename: Kee Hoon
authors.initials: KH
authors.lastname: Kim
authors.forename: P A
authors.initials: PA
authors.lastname: Sharma
authors.forename: N
authors.initials: N
authors.lastname: Harrison
authors.forename: H
authors.initials: H
authors.lastname: Amitsuka
authors.forename: J A
authors.initials: JA
authors.lastname: Mydosh