Interplay between fermi surface topology and ordering in URu2Si2 revealed through abrupt hall coefficient changes in strong magnetic fields.
Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the "hidden order," the degree of polarization of the Fermi liquid, and the Fermi surface topology.
Oh
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CSCMR & FPRD, School of Physics and Astronomy, Seoul National University, Seoul, South Korea.
Kim
Kee Hoon
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Sharma
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Harrison
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Amitsuka
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Mydosh
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