Growth of high-density titanium silicide nanowires in a single direction on a silicon surface.
Understanding the growth mechanisms of nanowires is essential for their successful implementation in advanced devices applications. In situ ultrahigh-vacuum transmission electron microscopy has been applied to elucidate the interaction mechanisms of titanium disilicide nanowires (TiSi2 NWs) on Si(111) substrate. Two phenomena were observed: merging of the two NWs in the same direction, and collapse of one NW on a competing NW in a different direction when they meet at the ends. On the other hand, as one NW encounters the midsection of the other NW in a different direction, it recedes in favor of bulging of the other NW at the midsection. Since crystallographically the nanowires are favored to grow on Si(110) only in the [1 -1 0] direction, this crucial information has been fruitfully exploited to focus on the growth of a high density of long and high-aspect-ratio Ti silicide NWs parallel to the surface on Si(110) in a single direction. The achievement in growth of high-density NWs in a single direction represents a significant advance in realizing the vast potential for applications of silicide NWs in nanoelectronics devices.
Hsu
Hung-Chang
HC
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
Wu
Wen-Wei
WW
Hsu
Hsun-Feng
HF
Chen
Lih-Juann
LJ
D016880:Anisotropy; D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring / Q000295:instrumentation* / Q000379:methods; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D017640:Silicates / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014025:Titanium / Q000737:chemistry*
D046911:Macromolecular Substances; D017640:Silicates; C103828:titanium silicide; D014025:Titanium; D012825:Silicon