Controlling the early stages of pentacene growth by supersonic molecular beam deposition.
The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx/Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek>5-6 eV. Optimal conditions to produce single crystalline films are envisaged.
Wu
Yu
Y
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747 AG, Groningen, The Netherlands.
Toccoli
Tullio
T
Koch
Norbert
N
Iacob
Erica
E
Pallaoro
Alessia
A
Rudolf
Petra
P
Iannotta
Salvatore
S