title: Controlling the early stages of pentacene growth by supersonic molecular beam deposition.
abstract: The key role of the pentacene kinetic energy (Ek) in the early stages of growth on SiOx/Si is demonstrated: islands with smooth borders and increased coalescence differ remarkably from fractal-like thermal growth. Increasing Ek to 6.4 eV, the morphology evolves towards higher density of smaller islands. At higher coverage, coalescence grows with Ek up to a much more uniform, less defected monolayer. The growth, interpreted by the diffusion mediated model, shows the critical nucleus changing from 3 to 2 pentacene for Ek>5-6 eV. Optimal conditions to produce single crystalline films are envisaged.
authors.affiliation: Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747 AG, Groningen, The Netherlands.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wu
authors.forename: Tullio
authors.initials: T
authors.lastname: Toccoli
authors.forename: Norbert
authors.initials: N
authors.lastname: Koch
authors.forename: Erica
authors.initials: E
authors.lastname: Iacob
authors.forename: Alessia
authors.initials: A
authors.lastname: Pallaoro
authors.forename: Petra
authors.initials: P
authors.lastname: Rudolf
authors.forename: Salvatore
authors.initials: S
authors.lastname: Iannotta