High-performance nano-Schottky diodes and nano-MESFETs made on single CdS nanobelts.
Nano-Schottky diodes and nanometal-semiconductor field-effect transistors (MESFETs) on single CdS nanobelts (NBs) have been fabricated and studied. The Au/CdS NB Schottky diodes have very low reverse current density ( approximately 3.0 x 10-5 A.cm-2 at -10 V reverse bias) and the highest on/off current ratio (approximately 108) reported so far for nano-Schottky diodes. The single CdS NB MESFETs exhibit n-channel normally on (depletion) mode, low threshold voltage (approximately -1.56 V), high transconductance ( approximately 3.5 microS), low subthreshold swing ( approximately 45 mV/dec), and the highest on/off current ratio (approximately 2 x 108) reported so far for nanofield-effect transistors. We also show that the absolute value of threshold voltage for a metal-insulator-semiconductor field-effect transistor made on a single CdS NB can be reduced from approximately 12.5 to approximately 0.4 V and its transconductance can be increased from approximately 0.2 to approximately 3.2 microS by adding an extra Au Schottky contact on the CdS NB, the mechanism of which is discussed.
Ma
Ren-Min
RM
School of Physics, Peking University, Beijing 100871, China.
Dai
Lun
L
Qin
Guo-Gang
GG
D019187:Cadmium Compounds / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D013440:Sulfides / Q000737:chemistry*; D014173:Transistors, Electronic
D019187:Cadmium Compounds; D046911:Macromolecular Substances; D013440:Sulfides; C034939:cadmium sulfide