title: Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors.
abstract: The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed us to estimate the average polaron trapping time, tau_{tr}=50+/-10 ps, and the density of shallow traps, N0=(3+/-0.5) x 10(11) cm(-2), in the channel of single-crystal tetracene devices.
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, USA.
authors.forename: M F
authors.initials: MF
authors.lastname: Calhoun
authors.forename: C
authors.initials: C
authors.lastname: Hsieh
authors.forename: V
authors.initials: V
authors.lastname: Podzorov