Energy-dependent tunneling in a quantum dot.
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.
MacLean
K
K
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. kmaclean@mit.edu
Amasha
S
S
Radu
Iuliana P
IP
Zumbühl
D M
DM
Kastner
M A
MA
Hanson
M P
MP
Gossard
A C
AC