Observation of the linear stark effect in a single acceptor in Si.
The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g_{1/2}=1.14 and g_{3/2}=1.72 and a linear Stark splitting 2Delta of 0.1 meV.
Calvet
L E
LE
Institut d'Electronique Fondamentale, Bâtiment 220, Université Paris-Sud, 91405 Orsay Cedex, France.
Wheeler
R G
RG
Reed
M A
MA