title: Kondo effect in magnetic tunnel junctions.
abstract: Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30 K.
authors.affiliation: Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-792, Korea.
authors.forename: K I
authors.initials: KI
authors.lastname: Lee
authors.forename: S J
authors.initials: SJ
authors.lastname: Joo
authors.forename: J H
authors.initials: JH
authors.lastname: Lee
authors.forename: K
authors.initials: K
authors.lastname: Rhie
authors.forename: Tae-Suk
authors.initials: TS
authors.lastname: Kim
authors.forename: W Y
authors.initials: WY
authors.lastname: Lee
authors.forename: K H
authors.initials: KH
authors.lastname: Shin
authors.forename: B C
authors.initials: BC
authors.lastname: Lee
authors.forename: P
authors.initials: P
authors.lastname: LeClair
authors.forename: J-S
authors.initials: JS
authors.lastname: Lee
authors.forename: J-H
authors.initials: JH
authors.lastname: Park