title: Energy-dependent tunneling in a quantum dot.
abstract: We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.
authors.affiliation: Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. kmaclean@mit.edu
authors.forename: K
authors.initials: K
authors.lastname: MacLean
authors.forename: S
authors.initials: S
authors.lastname: Amasha
authors.forename: Iuliana P
authors.initials: IP
authors.lastname: Radu
authors.forename: D M
authors.initials: DM
authors.lastname: Zumbühl
authors.forename: M A
authors.initials: MA
authors.lastname: Kastner
authors.forename: M P
authors.initials: MP
authors.lastname: Hanson
authors.forename: A C
authors.initials: AC
authors.lastname: Gossard