Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires.
We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels epsilon(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3+/-0.1 eV below the vacuum level. Calculations of epsilon(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.
Kagimura
R
R
Departamento de Física, ICEX, Universidade Federal de Minas Gerais, CP 702, 30123-970,Belo Horizonte, MG, Brazil.
Nunes
R W
RW
Chacham
H
H