Realization of atomically controlled dopant devices in silicon.
Ruess
Frank J
FJ
Australian Research Council, Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052, Australia.
Pok
Wilson
W
Reusch
Thilo C G
TC
Butcher
Matthew J
MJ
Goh
Kuan Eng J
KE
Oberbeck
Lars
L
Scappucci
Giordano
G
Hamilton
Alex R
AR
Simmons
Michelle Y
MY
D002244:Carbon / Q000737:chemistry; D003460:Crystallization; D004553:Electric Conductivity; D004583:Electrons; D006859:Hydrogen / Q000737:chemistry; D053768:Metal Nanoparticles / Q000737:chemistry*; D020527:Microscopy, Scanning Probe / Q000379:methods; D016252:Microscopy, Scanning Tunneling; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods; D012825:Silicon / Q000737:chemistry*; D013696:Temperature; D013997:Time Factors
D002244:Carbon; D006859:Hydrogen; D012825:Silicon