title: Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.
abstract: Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.
authors.affiliation: Department of Physics and Engineering Physics, University of Tulsa, Tulsa, Oklahoma 74104, USA.
authors.forename: Sanwu
authors.initials: S
authors.lastname: Wang
authors.forename: S
authors.initials: S
authors.lastname: Dhar
authors.forename: Shu-Rui
authors.initials: SR
authors.lastname: Wang
authors.forename: A C
authors.initials: AC
authors.lastname: Ahyi
authors.forename: A
authors.initials: A
authors.lastname: Franceschetti
authors.forename: J R
authors.initials: JR
authors.lastname: Williams
authors.forename: L C
authors.initials: LC
authors.lastname: Feldman
authors.forename: Sokrates T
authors.initials: ST
authors.lastname: Pantelides