Breakdown enhancement in silicon nanowire p-n junctions.
We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as rho approximately 10-7 Omega cm2. Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits.
Agarwal
P
P
NXP Semiconductors, Research, Kapeldreef 75, 3001 Leuven, Belgium. prabhat.agarwal@nxp.com
Vijayaraghavan
M N
MN
Neuilly
F
F
Hijzen
E
E
Hurkx
G A M
GA
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods; D004553:Electric Conductivity; D004559:Electric Wiring / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008956:Models, Chemical; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D012825:Silicon