Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.
Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.
Wang
Sanwu
S
Department of Physics and Engineering Physics, University of Tulsa, Tulsa, Oklahoma 74104, USA.
Dhar
S
S
Wang
Shu-Rui
SR
Ahyi
A C
AC
Franceschetti
A
A
Williams
J R
JR
Feldman
L C
LC
Pantelides
Sokrates T
ST