title: Mechanism of enhancement in electromagnetic properties of MgB2 by Nano SiC doping.
abstract: A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
authors.affiliation: Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW 2522, Australia.
authors.forename: S X
authors.initials: SX
authors.lastname: Dou
authors.forename: O
authors.initials: O
authors.lastname: Shcherbakova
authors.forename: W K
authors.initials: WK
authors.lastname: Yeoh
authors.forename: W K
authors.initials: WK
authors.lastname: Yoeh
authors.forename: J H
authors.initials: JH
authors.lastname: Kim
authors.forename: S
authors.initials: S
authors.lastname: Soltanian
authors.forename: X L
authors.initials: XL
authors.lastname: Wang
authors.forename: C
authors.initials: C
authors.lastname: Senatore
authors.forename: R
authors.initials: R
authors.lastname: Flukiger
authors.forename: M
authors.initials: M
authors.lastname: Dhalle
authors.forename: O
authors.initials: O
authors.lastname: Husnjak
authors.forename: E
authors.initials: E
authors.lastname: Babic