title: Observation of the linear stark effect in a single acceptor in Si.
abstract: The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g_{1/2}=1.14 and g_{3/2}=1.72 and a linear Stark splitting 2Delta of 0.1 meV.
authors.affiliation: Institut d'Electronique Fondamentale, Bâtiment 220, Université Paris-Sud, 91405 Orsay Cedex, France.
authors.forename: L E
authors.initials: LE
authors.lastname: Calvet
authors.forename: R G
authors.initials: RG
authors.lastname: Wheeler
authors.forename: M A
authors.initials: MA
authors.lastname: Reed