title: Realization of atomically controlled dopant devices in silicon.
authors.affiliation: Australian Research Council, Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052, Australia.
authors.forename: Frank J
authors.initials: FJ
authors.lastname: Ruess
authors.forename: Wilson
authors.initials: W
authors.lastname: Pok
authors.forename: Thilo C G
authors.initials: TC
authors.lastname: Reusch
authors.forename: Matthew J
authors.initials: MJ
authors.lastname: Butcher
authors.forename: Kuan Eng J
authors.initials: KE
authors.lastname: Goh
authors.forename: Lars
authors.initials: L
authors.lastname: Oberbeck
authors.forename: Giordano
authors.initials: G
authors.lastname: Scappucci
authors.forename: Alex R
authors.initials: AR
authors.lastname: Hamilton
authors.forename: Michelle Y
authors.initials: MY
authors.lastname: Simmons
mesh_terms: D002244:Carbon / Q000737:chemistry; D003460:Crystallization; D004553:Electric Conductivity; D004583:Electrons; D006859:Hydrogen / Q000737:chemistry; D053768:Metal Nanoparticles / Q000737:chemistry*; D020527:Microscopy, Scanning Probe / Q000379:methods; D016252:Microscopy, Scanning Tunneling; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods; D012825:Silicon / Q000737:chemistry*; D013696:Temperature; D013997:Time Factors
chemical_list: D002244:Carbon; D006859:Hydrogen; D012825:Silicon