title: Sensitivity and dynamic range of FGMOS dosemeters.
abstract: UVPROM memory devices employing FGMOS transistors as memory cells make excellent dosemeters for applications involving ionising radiation. With proper preparation and programming, these devices can be used in remote-sensing applications in high-radiation environments with no power required during exposure.
authors: Clemson University, Clemson, SC 29634-0978, USA. mpeter@clemson.edu
authors: P J
authors: PJ
authors: McNulty
authors: Kelvin F
authors: KF
authors: Poole
authors: M
authors: M
authors: Crissler
authors: J
authors: J
authors: Reneau
authors: G
authors: G
authors: Cellere
authors: A
authors: A
authors: Paccagnella
authors: A
authors: A
authors: Visconti
authors: M
authors: M
authors: Bonanomi
authors: Dave
authors: D
authors: Stroebel
authors: Michael
authors: M
authors: Fennell
authors: Roger
authors: R
authors: Perez
mesh_terms: D004307:Dose-Response Relationship, Radiation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008904:Miniaturization; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D011829:Radiation Dosage; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014173:Transistors, Electronic