Magnetically induced field effect in carbon nanotube devices.
Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNTs) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from the temperature-dependent magnetoconductance measurements.
Fedorov
Georgy
G
National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA. fedorov@magnet.fsu.edu
Tselev
Alexander
A
Jiménez
David
D
Latil
Sylvain
S
Kalugin
Nikolai G
NG
Barbara
Paola
P
Smirnov
Dmitry
D
Roche
Stephan
S
D004553:Electric Conductivity; D004574:Electromagnetic Fields; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000528:radiation effects*; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon