title: Magnetically induced field effect in carbon nanotube devices.
abstract: Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNTs) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from the temperature-dependent magnetoconductance measurements.
authors: National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA. fedorov@magnet.fsu.edu
authors: Georgy
authors: G
authors: Fedorov
authors: Alexander
authors: A
authors: Tselev
authors: David
authors: D
authors: Jiménez
authors: Sylvain
authors: S
authors: Latil
authors: Nikolai G
authors: NG
authors: Kalugin
authors: Paola
authors: P
authors: Barbara
authors: Dmitry
authors: D
authors: Smirnov
authors: Stephan
authors: S
authors: Roche
mesh_terms: D004553:Electric Conductivity; D004574:Electromagnetic Fields; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000528:radiation effects*; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon