Ultralong single-crystal metallic Ni2Si nanowires with low resistivity.
Ultralong, single-crystal Ni2Si nanowires sheathed with amorphous silicon oxide were synthesized on a large scale by a chemical vapor transport (CVT) method, using iodine as the transport reagent and Ni2Si powder as the source material. Structural characterization using powder X-ray diffraction, electron microscopy, and energy-dispersive spectroscopy shows that the nanowires have Ni2Si-SiOx core-shell structure with single-crystal Ni2Si core and amorphous silicon oxide shell. The oxide shell is electrically insulating and can be removed by HF etching. Four-terminal electrical measurements show that the single-crystal nanowire has extremely low resistivity of 21 muOmega.cm and is capable of supporting remarkably high failure current density >108 A/cm2. These unique Ni2Si nanowires are very attractive nanoscale building blocks for interconnects and fully silicided (FUSI) gate applications in nanoelectronics.
Song
Yipu
Y
Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
Schmitt
Andrew L
AL
Jin
Song
S
D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004559:Electric Wiring / Q000295:instrumentation*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008670:Metals / Q000737:chemistry; D008968:Molecular Conformation; D008970:Molecular Weight; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D009532:Nickel / Q000737:chemistry*; D010316:Particle Size; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D008670:Metals; D017655:Silicon Compounds; C506609:nickel silicide; D009532:Nickel