Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.
A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.
Shin
Jonghyun
J
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA. jonghyun@umich.edu
Bhattacharya
Pallab
P
Yuan
Hao-Chih
HC
Ma
Zhenqiang
Z
Váró
György
G
D001436:Bacteriorhodopsins / Q000737:chemistry*; D004553:Electric Conductivity; D004586:Electrophoresis / Q000295:instrumentation / Q000379:methods; D019617:Halobacterium salinarum / Q000378:metabolism*; D008027:Light; D055095:Optics and Photonics; D010087:Oxides / Q000737:chemistry; D010777:Photochemistry / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry; D014173:Transistors, Electronic
D010087:Oxides; D017971:Tin Compounds; D001436:Bacteriorhodopsins; C045358:stannic oxide; D012825:Silicon