title: [Spatial distribution of optical emission spectrum in electron-assisted chemical vapor deposition of diamond].
abstract: The optical emission process of atomic hydrogen (Halpha, Hbeta, Hgamma), atomic carbon C(2p3s-->2p2: gamma= 165. 7 nm) and radical CH( A(2)delta--> X(2) II:gamma=420-440 nm) in diamond film growth by electron-assisted chemical vapor deposition (EACVD) from a gas mixture of CH4 and H2 was studied using Monte-Carlo simulation. Spatial distributions of the emission lines were investigated. The spatial distributions of intensity of all these emission lines were the same on the whole, which increases with the distance from the filament and decreases near the substrate. The intensity of atomic hydrogen lines decreases with increasing CH4 concentration, while that of CH and atomic C lines increases with increasing CH4 concentration.
authors: College of Physics Science and Technology, Hebei University, Baoding 071002, China. donglf@mail.hbu.edu.cn
authors: Li-fang
authors: LF
authors: Dong
authors: Zhi-jun
authors: ZJ
authors: Wang
authors: Yong
authors: Y
authors: Shang