title: Passively Q-switched Yb3+:YCa4O(BO3)3 laser with InGaAs quantum wells as saturable absorbers.
abstract: A diode-pumped Yb:YCOB laser at 1086 nm is passively Q switched by using InGaAs quantum wells as saturable absorbers and utilizing the Bragg mirror structure as an output coupler. With an absorbed pump power of 9.2 W the laser produces pulses of 100 ms duration with average pulse energy of as much as 165 microJ at a pulse repetition rate of 7 kHz.
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
authors.forename: H C
authors.initials: HC
authors.lastname: Liang
authors.forename: J Y
authors.initials: JY
authors.lastname: Huang
authors.forename: K W
authors.initials: KW
authors.lastname: Su
authors.forename: H C
authors.initials: HC
authors.lastname: Lai
authors.forename: Y F
authors.initials: YF
authors.lastname: Chen
authors.forename: K F
authors.initials: KF
authors.lastname: Huang
authors.forename: H J
authors.initials: HJ
authors.lastname: Zhang
authors.forename: J Y
authors.initials: JY
authors.lastname: Wang
authors.forename: M H
authors.initials: MH
authors.lastname: Jiang