Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires.
We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.
Jacobs
Benjamin W
BW
Department of Electrical and Computer Engineering, Michigan State University, 2120 Engineering Building, East Lansing, Michigan 48824, USA. jacobsbe@egr.msu.edu
Ayres
Virginia M
VM
Petkov
Mihail P
MP
Halpern
Joshua B
JB
He
Maoqi
M
Baczewski
Andrew D
AD
McElroy
Kaylee
K
Crimp
Martin A
MA
Zhang
Jiaming
J
Shaw
Harry C
HC