title: Controlled Al-doped single-crystalline silicon nitride nanowires synthesized via pyrolysis of polymer precursors.
abstract: Al-doped single-crystalline Si(3)N(4) nanowires were synthesized by catalyst-assisted pyrolysis of polymeric precursors. The doping levels can be controlled by tailoring the Al concentration in the precursors. It is found that the Al concentration has a significant effect on the shape, sizes, and phase compositions of the synthesized Si(3)N(4) low-dimensional nanomaterials. The photoluminescence measurements revealed that the Al dopants have a profound effect on the emission behavior. The current study provides a simple way to realize the controlled doping in Si(3)N(4) nanomaterials, which could be useful for applications in optoelectronic nanodevices.
authors.affiliation: School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016, People's Republic of China. ywy01@tsinghua.org.cn
authors.forename: Weiyou
authors.initials: W
authors.lastname: Yang
authors.forename: Huatao
authors.initials: H
authors.lastname: Wang
authors.forename: Shuzhen
authors.initials: S
authors.lastname: Liu
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Xie
authors.forename: Linan
authors.initials: L
authors.lastname: An