title: Nanoscale ferroelectric information storage based on scanning nonlinear dielectric microscopy.
abstract: An investigation of ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) is described. For the purpose of obtaining fundamental knowledge on high-density ferroelectric data storage, several experiments on nanodomain formation in a lithium tantalate (LiTaO3) single crystal were conducted. Through domain engineering, a domain dot array with an areal density of 1.5 Tbit/inch2 was formed on congruent LiTaO3 (CLT). Sub-nanosecond (500 psec) domain switching speed also has been achieved. Next, actual information storage is demonstrated at a density of 1 Tbit/inch2. Finally, it is described that application of a very small dc offset voltage is very effective in accelerating the domain switching speed and in stabilizing the reversed nano-domain dots. Applying this offset application technique, we formed a smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date.
authors: Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
authors: Yasuo
authors: Y
authors: Cho
mesh_terms: D016248:Computer Storage Devices; D003201:Computers; D003460:Crystallization; D004563:Electrochemistry; D004566:Electrodes; D004867:Equipment Design; D016247:Information Storage and Retrieval; D008027:Light; D008094:Lithium / Q000737:chemistry*; D008853:Microscopy / Q000379:methods*; D008855:Microscopy, Electron, Scanning; D053758:Nanoparticles / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods; D010087:Oxides / Q000737:chemistry*; D013635:Tantalum / Q000737:chemistry*
chemical_list: D010087:Oxides; C473347:lithium tantalate oxide; D013635:Tantalum; D008094:Lithium