Molecular memory based on nanowire-molecular wire heterostructures.
This article reviews the recent research of molecular memory based on self-assembled nanowire-molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.
Li
Chao
C
Department of Electrical Engineering-Electrophysics, University of Southern California, CA 90089, USA.
Lei
Bo
B
Fan
Wendy
W
Zhang
Daihua
D
Meyyappan
M
M
Zhou
Chongwu
C
D016248:Computer Storage Devices; D004583:Electrons; D006046:Gold / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D016247:Information Storage and Retrieval; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008956:Models, Chemical; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D009711:Nucleotides / Q000737:chemistry; D011725:Pyridines / Q000737:chemistry; D013696:Temperature; D013997:Time Factors
D009711:Nucleotides; D011725:Pyridines; D007204:Indium; C047711:indium oxide; D006046:Gold