Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals.
Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
Yeh
P H
PH
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
Chen
L J
LJ
Liu
P T
PT
Wang
D Y
DY
Chang
T C
TC
D003035:Cobalt / Q000737:chemistry*; D016248:Computer Storage Devices; D003460:Crystallization; D006195:Hafnium / Q000737:chemistry*; D016247:Information Storage and Retrieval; D046529:Microscopy, Electron, Transmission; D053758:Nanoparticles / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D009532:Nickel / Q000737:chemistry; D010087:Oxides / Q000737:chemistry*; D012666:Semiconductors; D017640:Silicates / Q000737:chemistry*; D013997:Time Factors
D010087:Oxides; D017640:Silicates; D003035:Cobalt; D009532:Nickel; D006195:Hafnium