Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
Kittler
M
M
IHP, Im Technologiepark 25, 15236 Frankfurt, Germany.
Yu
X
X
Mchedlidze
T
T
Arguirov
T
T
Vyvenko
O F
OF
Seifert
W
W
Reiche
M
M
Wilhelm
T
T
Seibt
M
M
Voss
O
O
Wolff
A
A
Fritzsche
W
W
D001695:Biology / Q000295:instrumentation*; D004581:Electronics / Q000295:instrumentation*; D004583:Electrons; D049449:Luminescence; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures; D055095:Optics and Photonics / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
D012825:Silicon