title: n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency.
abstract: Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 microm or approximately 13 meV work function) is demonstrated by using a 1 x 10(18) cm(-3) Si-doped GaAs emitter and an undoped Al(0.04)Ga(0.96)As barrier structure. The peak responsivity of 6.5 A/W, detectivity of 5.5 x 10(8) Jones, and quantum efficiency of 19% were obtained at 7.1 THz under a bias field of 0.7 kV/cm at 6 K, while the detector spectral response range spans from 3.2 to 30 THz.
authors: Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA.
authors: Aruna
authors: A
authors: Weerasekara
authors: Mohamad
authors: M
authors: Rinzan
authors: Steven
authors: S
authors: Matsik
authors: A G
authors: AG
authors: Perera
authors: Margaret
authors: M
authors: Buchanan
authors: Hui Chun
authors: HC
authors: Liu
authors: Greg
authors: G
authors: von Winckel
authors: Andreas
authors: A
authors: Stintz
authors: Sanjay
authors: S
authors: Krishna