title: A simple route to ultra long SiC nanowires.
abstract: SiC nanowires are prepared by pyrolysis of hexamethyldisilane (HMDS), at 1200 degrees C in a flowing Ar atmosphere. The length of the nanowires is in millimeter scale. Transmission electron microscopy observations indicate that the diameters of the SiC nanowires are in the range of about 8 to 120 nm, and that most of the nanowires have numerous stacking faults. The formation mechanism of the nanowires is proposed.
authors: Tongji University, Functional Materials Research Laboratory, Shanghai 200092, China.
authors: K F
authors: KF
authors: Cai
authors: Q
authors: Q
authors: Lei
authors: A X
authors: AX
authors: Zhang
mesh_terms: D001128:Argon / Q000737:chemistry; D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D004577:Electron Probe Microanalysis; D004867:Equipment Design; D006358:Hot Temperature; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D012821:Silanes / Q000737:chemistry; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D017554:Carbon Compounds, Inorganic; D012821:Silanes; D017655:Silicon Compounds; D001128:Argon; C022088:silicon carbide