title: Field emission of GaN-filled carbon nanotubes: high and stable emission current.
abstract: Field electron emission of GaN-filled carbon nanotubes, grown by microwave plasma enhanced chemical vapor deposition, was investigated. The detailed structural characterization shows that the filled nanotube has a GaN-core/C-shell structure, in which the GaN wire corresponds to a wurtzite structure. The field emission properties of the GaN-filled carbon nanotubes have been achieved with high and stable emission current. It is attributed to the unique cable-like structure, which makes the GaN-core/C-shell composite mechanically solid and chemically stable. This study suggests the GaN-filled carbon nanotube as an ideal candidate for future high-current and high-power field emitter applications.
authors: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
authors: L
authors: L
authors: Liao
authors: J C
authors: JC
authors: Li
authors: C
authors: C
authors: Liu
authors: Z
authors: Z
authors: Xu
authors: W L
authors: WL
authors: Wang
authors: S
authors: S
authors: Liu
authors: X D
authors: XD
authors: Bai
authors: E G
authors: EG
authors: Wang
mesh_terms: D004563:Electrochemistry; D005708:Gallium / Q000737:chemistry*; D008854:Microscopy, Electron; D008855:Microscopy, Electron, Scanning; D017348:Microscopy, Electron, Scanning Transmission; D036103:Nanotechnology; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D033362:Powder Diffraction
chemical_list: D037742:Nanotubes, Carbon; C473348:gallium nitride; D005708:Gallium