High-frequency surface acoustic waves excited on thin-oriented LiNbO3 single-crystal layers transferred onto silicon.
The need for high-frequency, wide-band filters has instigated many developments based on combining thin piezoelectric films and high acoustic velocity materials (sapphire, diamond-like carbon, silicon, etc.) to ease the manufacture of devices operating above 2 GHz. In the present work, a technological process has been developed to achieve thin-oriented, single-crystal lithium niobate (LiNbO3) layers deposited on (100) silicon wafers for the fabrication of radio-frequency (RF) surface acoustic wave (SAW) devices. The use of such oriented thin films is expected to favor large coupling coefficients together with a good control of the layer properties, enabling one to chose the best combination of layer orientation to optimize the device. A theoretical analysis of the elastic wave assumed to propagate on such a combination of material is first exposed. Technological aspects then are described briefly. Experimental results are presented and compared to the state of art.
Pastureaud
Thomas
T
TEMEX, F-06904 Sophia-Antipolis Cedex, France.
Solal
Marc
M
Biasse
Béatrice
B
Aspar
Bernard
B
Briot
Jean-Bernard
JB
Daniau
William
W
Steichen
William
W
Lardat
Raphaël
R
Laude
Vincent
V
Laëns
Alain
A
Friedt
Jean-Michel
JM
Ballandras
Sylvain
S
D000162:Acoustics / Q000295:instrumentation*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008567:Membranes, Artificial; D008962:Models, Theoretical; D009556:Niobium / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D011829:Radiation Dosage; D011846:Radio Waves; D011874:Radiometry / Q000379:methods; D012825:Silicon / Q000737:chemistry*
D008567:Membranes, Artificial; D010087:Oxides; D009556:Niobium; C091692:lithium niobate; D012825:Silicon