title: Mass-limited Sn target irradiated by dual laser pulses for an extreme ultraviolet lithography source.
abstract: A thin Sn film was investigated as a mass-limited target for an extreme ultraviolet (EUV) lithography source. It was found that those energetic ions that are intrinsic with the mass-limited Sn target could be efficiently mitigated by introducing a low-energy prepulse. High in-band conversion efficiency from a laser to 13.5 nm EUV light could be obtained using an Sn film with a thickness down to 30 nm when irradiated by dual laser pulses. It was shown that the combination of dual pulse and inert Ar gas could fully mitigate ions with a low ambient pressure nearly without the penalty of the absorption of the EUV light.
authors: Department of Mechanical and Aerospace Engineering and the Center for Energy Research, University of California, La Jolla 92093-0438, USA. yetao@ucsd.edu
authors: Y
authors: Y
authors: Tao
authors: M S
authors: MS
authors: Tillack
authors: S S
authors: SS
authors: Harilal
authors: K L
authors: KL
authors: Sequoia
authors: R A
authors: RA
authors: Burdt
authors: F
authors: F
authors: Najmabadi