Optothermal property and decomposition characteristics of PtO(x) ultrathin film sandwiched between ZnS-SiO2 for super-resolution near-field recording.
We have investigated the optothermal property and decomposition characteristics of PtO(x) ultrathin film protected by ZnS-SiO2 layers and effects of the constituent phases of PtO(x) on super-resolution capability and read stability of the super-RENS disk. All the ZnS-SiO2/PtO(x)/ZnS-SiO2 multilayers exhibited a steep reflectivity drop at the temperature range between 265 and 350 degrees C, corresponding to the decomposition of PtO(x). The decomposition temperature of the 4-nm-thick PtO(x) ultrathin film protected by ZnS-SiO2 layers was much lower than those obtained in thick PtO(x) films without protection. The activation energy for thermal decomposition was approximately 1.3 eV. Both the decomposition temperature and activation energy for thermal decomposition were unaffected by the constituent phases of PtO(x). Carrier to noise ratios (CNR) of over 40 dB for mark size of 150 nm were achieved in all super-resolution near-field structure (super-RENS) disks, while the super-resolution readout was limited to 2.5 x 10(3) approximately 4.5 x 10(4) cycles. The effect of constituent phases of PtO(x) on the super-resolution capability of super-RENS disk with a PtO(x) mask layer was minimal. However, as the constituent phases of PtO(x) mask layer transformed from a mixture of Pt and PtO, to pure PtO, and then to a mixture of PtO and PtO2, the readout stability of super-RENS disk increased dramatically since less heat was absorbed by the PtO(x) mask layer composed of PtO and PtO2 during the readout process, prohibiting the diffusion of materials inside the bubble to the GeSbTe phase change layer.
Her
Yung-Chiun
YC
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 40254, Republic of China.
Liao
Bou-Yin
BY
Hsu
Wei-Chih
WC
Tsai
Song-Yeu
SY
D016248:Computer Storage Devices; D004563:Electrochemistry / Q000379:methods; D006358:Hot Temperature; D016247:Information Storage and Retrieval; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D055095:Optics and Photonics; D010087:Oxides / Q000737:chemistry*; D010984:Platinum / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013440:Sulfides / Q000737:chemistry*; D013696:Temperature; D014961:X-Ray Diffraction; D017967:Zinc Compounds / Q000737:chemistry*
D010087:Oxides; D013440:Sulfides; D017967:Zinc Compounds; C514637:platinum oxide; D010984:Platinum; D012822:Silicon Dioxide; C031238:zinc sulfide