title: Doped ZnO nanowires obtained by thermal annealing.
abstract: Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires. The incorporation of the dopants was confirmed by energy dispersive X-ray spectroscopy. The doping concentration could be adjusted by changing the annealing temperature and duration. Scanning electron microscopy indicated that the morphology of the ZnSe nanowires was essentially retained after the annealing and doping process. Photoluminescence spectroscopy also verified the incorporation of the dopants into the nanowires.
authors: Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China.
authors: C X
authors: CX
authors: Shan
authors: Z
authors: Z
authors: Liu
authors: C C
authors: CC
authors: Wong
authors: S K
authors: SK
authors: Hark
mesh_terms: D001151:Arsenic / Q000737:chemistry; D004577:Electron Probe Microanalysis; D005708:Gallium / Q000737:chemistry; D006358:Hot Temperature; D007204:Indium / Q000737:chemistry; D049449:Luminescence; D008163:Luminescent Measurements / Q000379:methods; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010084:Oxidation-Reduction; D010758:Phosphorus / Q000737:chemistry; D010783:Photometry / Q000379:methods; D012643:Selenium / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D013056:Spectrophotometry, Ultraviolet; D013499:Surface Properties; D014961:X-Ray Diffraction; D015032:Zinc / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D007204:Indium; D010758:Phosphorus; D005708:Gallium; D012643:Selenium; D015032:Zinc; D001151:Arsenic; D015034:Zinc Oxide; D012825:Silicon