title: Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.
abstract: Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
authors: IHP, Im Technologiepark 25, 15236 Frankfurt, Germany.
authors: M
authors: M
authors: Kittler
authors: X
authors: X
authors: Yu
authors: T
authors: T
authors: Mchedlidze
authors: T
authors: T
authors: Arguirov
authors: O F
authors: OF
authors: Vyvenko
authors: W
authors: W
authors: Seifert
authors: M
authors: M
authors: Reiche
authors: T
authors: T
authors: Wilhelm
authors: M
authors: M
authors: Seibt
authors: O
authors: O
authors: Voss
authors: A
authors: A
authors: Wolff
authors: W
authors: W
authors: Fritzsche
mesh_terms: D001695:Biology / Q000295:instrumentation*; D004581:Electronics / Q000295:instrumentation*; D004583:Electrons; D049449:Luminescence; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures; D055095:Optics and Photonics / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon