title: Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping.
abstract: We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.
authors.affiliation: Department of Physics, Tsinghua University, Beijing 100084, China.
authors.forename: Qimin
authors.initials: Q
authors.lastname: Yan
authors.forename: Bing
authors.initials: B
authors.lastname: Huang
authors.forename: Jie
authors.initials: J
authors.lastname: Yu
authors.forename: Fawei
authors.initials: F
authors.lastname: Zheng
authors.forename: Ji
authors.initials: J
authors.lastname: Zang
authors.forename: Jian
authors.initials: J
authors.lastname: Wu
authors.forename: Bing-Lin
authors.initials: BL
authors.lastname: Gu
authors.forename: Feng
authors.initials: F
authors.lastname: Liu
authors.forename: Wenhui
authors.initials: W
authors.lastname: Duan
mesh_terms: D002244:Carbon / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances; D002244:Carbon