title: Electronegative oligothiophenes for n-type semiconductors: difluoromethylene-bridged bithiophene and its oligomers.
abstract: The synthesis of difluoromethylene-bridged bithiophene and its oligothiophenes are reported. The spectroscopic and electrochemical measurement as well as X-ray analyses unambiguously revealed that the difluoromethylene bridge largely contributes to keeping planarity between the thiophene rings and lowering the LUMO level. The perfluorohexyl-substituted quaterthiophene derivatives showed n-type semiconducting behavior with field-effect electron mobilities up to 0.018 cm2 V-1 s-1.
authors.affiliation: The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Ie
authors.forename: Masashi
authors.initials: M
authors.lastname: Nitani
authors.forename: Motomi
authors.initials: M
authors.lastname: Ishikawa
authors.forename: Ken-ichi
authors.initials: K
authors.lastname: Nakayama
authors.forename: Hirokazu
authors.initials: H
authors.lastname: Tada
authors.forename: Takahiro
authors.initials: T
authors.lastname: Kaneda
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Aso