Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping.
We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.
Yan
Qimin
Q
Department of Physics, Tsinghua University, Beijing 100084, China.
Huang
Bing
B
Yu
Jie
J
Zheng
Fawei
F
Zang
Ji
J
Wu
Jian
J
Gu
Bing-Lin
BL
Liu
Feng
F
Duan
Wenhui
W
D002244:Carbon / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D002244:Carbon