Electronegative oligothiophenes for n-type semiconductors: difluoromethylene-bridged bithiophene and its oligomers.
The synthesis of difluoromethylene-bridged bithiophene and its oligothiophenes are reported. The spectroscopic and electrochemical measurement as well as X-ray analyses unambiguously revealed that the difluoromethylene bridge largely contributes to keeping planarity between the thiophene rings and lowering the LUMO level. The perfluorohexyl-substituted quaterthiophene derivatives showed n-type semiconducting behavior with field-effect electron mobilities up to 0.018 cm2 V-1 s-1.
Ie
Yutaka
Y
The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Nitani
Masashi
M
Ishikawa
Motomi
M
Nakayama
Ken-ichi
K
Tada
Hirokazu
H
Kaneda
Takahiro
T
Aso
Yoshio
Y