Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment.
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time, thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states, and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.
Tu
Ryan
R
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
Zhang
Li
L
Nishi
Yoshio
Y
Dai
Hongjie
H
D025802:Electric Capacitance; D004559:Electric Wiring / Q000295:instrumentation; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D014173:Transistors, Electronic
D005857:Germanium