Synthesis, characterization, and optical properties of In2O3 semiconductor nanowires.
In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 degrees C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure.
Wang
Guoxiu
G
School of Mechanical, Materials and Mechatronic Engineering, Institute for Superconducting and Electronic Materials, University of Wollongong, NSW 2522, Australia. gwang@uow.edu.au
Park
Jinsoo
J
Wexler
David
D
Park
Min Sik
MS
Ahn
Jung-Ho
JH
D007204:Indium / Q000737:chemistry*; D008163:Luminescent Measurements; D008854:Microscopy, Electron; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D013057:Spectrum Analysis
D007204:Indium; C047711:indium oxide