Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure.
The dependence of the electron mass on hydrostatic pressure P in N-diluted GaAs1-xNx (x=0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large fluctuations (up to 60%/kbar) in the electron mass with increasing P are found. These originate from a pressure-driven tuning of the hybridization degree between the conduction band minimum and specific nitrogen-related states. Present results suggest a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host.
Pettinari
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G
CNISM and Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy.
Polimeni
A
A
Masia
F
F
Trotta
R
R
Felici
M
M
Capizzi
M
M
Niebling
T
T
Stolz
W
W
Klar
P J
PJ