title: Impact of space-energy correlation on variable range hopping in a transistor.
abstract: Hopping conduction in transistors, i.e., under a transverse electric field, is addressed using percolation theory with a space-energy correlation in the density of states of the impurity band. The computation of the percolation threshold over an extended range of correlation parameters enables us to derive a formula, which, while giving the classical results in the low field limit, describes the emergence of a specific variable range hopping in the high field case. An application of this formula to experimentally extract the localization radius is also proposed.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
authors.forename: J-F
authors.initials: JF
authors.lastname: Morizur
authors.forename: Y
authors.initials: Y
authors.lastname: Ono
authors.forename: H
authors.initials: H
authors.lastname: Kageshima
authors.forename: H
authors.initials: H
authors.lastname: Inokawa
authors.forename: H
authors.initials: H
authors.lastname: Yamaguchi