Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.
We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.
Sohn
Jung Inn
JI
Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom.
Joo
Heung Jin
HJ
Porter
Alexandra E
AE
Choi
Chel-Jong
CJ
Kim
Kinam
K
Kang
Dae Joon
DJ
Welland
Mark E
ME
D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D044367:Phase Transition; D013499:Surface Properties; D017968:Vanadium Compounds / Q000737:chemistry*
D046911:Macromolecular Substances; D017968:Vanadium Compounds