title: Electrical spin injection and threshold reduction in a semiconductor laser.
abstract: A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.
authors.affiliation: Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA.
authors.forename: M
authors.initials: M
authors.lastname: Holub
authors.forename: J
authors.initials: J
authors.lastname: Shin
authors.forename: D
authors.initials: D
authors.lastname: Saha
authors.forename: P
authors.initials: P
authors.lastname: Bhattacharya