Optical switching of porphyrin-coated silicon nanowire field effect transistors.
We study porphyrin derivative coated silicon nanowire field effect transistors (SiNW-FETs), which display a large, stable, and reproducible conductance increase upon illumination. The efficiency and the kinetics of the optical switching are studied as a function of gate voltage, illumination wavelength, and temperature. The decay kinetics from the high- to the low-conductance state is governed by charge recombination via tunneling, with a rate depending on the state of the SiNW-FET. The comparison to porphyrin-sensitized carbon nanotube FETs allows the environment- and molecule-dependent photoconversion process to be distinguished from the charge-to-current transducing effect of the semiconducting channel.
Winkelmann
Clemens B
CB
Institut Néel-CNRS, BP 166, 38042 Grenoble Cédex 9, France.
Ionica
Irina
I
Chevalier
Xavier
X
Royal
Guy
G
Bucher
Christophe
C
Bouchiat
Vincent
V
D003460:Crystallization / Q000379:methods; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D055095:Optics and Photonics / Q000295:instrumentation*; D010316:Particle Size; D011166:Porphyrins / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D011166:Porphyrins; D012825:Silicon