Carrier-envelope-offset phase control of ultrafast optical rectification in resonantly excited semiconductors.
Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film GaAs. We subsequently suggest a possible technique to extract the CEP, in both sign and amplitude, using a solid state detector.
Van Vlack
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Department of Physics, Queen's University, Kingston, ON K7L 3N6 Canada.
Hughes
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