title: Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.
abstract: Lateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [211] in parallel to the Si +/-[110] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ doping, the resistivity of the In2O3 NWs has been tuned. The lateral self-aligned In2O3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
authors.forename: C L
authors.initials: CL
authors.lastname: Hsin
authors.forename: J H
authors.initials: JH
authors.lastname: He
authors.forename: C Y
authors.initials: CY
authors.lastname: Lee
authors.forename: W W
authors.initials: WW
authors.lastname: Wu
authors.forename: P H
authors.initials: PH
authors.lastname: Yeh
authors.forename: L J
authors.initials: LJ
authors.lastname: Chen
authors.forename: Z L
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D007204:Indium; C047711:indium oxide; D012825:Silicon