Scanning electron microscopic analysis of diode laser-treated titanium implant surfaces.
OBJECTIVE
The objective of this study was to analyze the possible morphological alterations of the surface implants after using 980-nm diode laser irradiation (InGalAsP) at various energies.


BACKGROUND
Laser-based protocols have been proposed for decontaminating dental implant surfaces when treating peri-implantitis, although few studies have addressed this topic directly.


METHODS
Five smooth surface implants (TiOblast ST, Astra Tech AB, Mölndal, Sweden) were irradiated with 980-nm diode laser, and one implant that was not lased served as the control. The surface of each implant was treated for 60 sec on implant neck to apical threads. The experiment consisted of exposing the dental titanium implants to diode laser irradiation. Then the surfaces were analyzed by scanning electron microscopy (SEM).


RESULTS
SEM analysis demonstrated any damage or alteration of titanium surfaces. Regardless of the power setting, there was no visible difference between lased and non-lased titanium surfaces after irradiation with the 980-nm diode laser.


CONCLUSIONS
The results of this study suggest that the InGalAsP diode laser (980 nm) does not damage titanium surfaces, and seems to be safe and useful of treating peri-implantitis, irrespective of power output.
Castro
Gonzalo López
GL
School of Dentistry, Faculty of Medicine and Dentistry, University of Santiago de Compostela, Santiago de Compostela, Spain.
Gallas
Mercedes
M
Núñez
Ignacio Rodríguez
IR
Borrajo
José Luis Leyes
JL
Alvarez
Juan Cuevas
JC
Varela
Luis García
LG
D015921:Dental Implants; D006801:Humans; D007834:Lasers; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D014025:Titanium
D015921:Dental Implants; D014025:Titanium