title: Spatial imaging of two-dimensional electronic states in semiconductor quantum wells.
abstract: We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan. kyoichi@will.brl.ntt.co.jp
authors.forename: K
authors.initials: K
authors.lastname: Suzuki
authors.forename: K
authors.initials: K
authors.lastname: Kanisawa
authors.forename: C
authors.initials: C
authors.lastname: Janer
authors.forename: S
authors.initials: S
authors.lastname: Perraud
authors.forename: K
authors.initials: K
authors.lastname: Takashina
authors.forename: T
authors.initials: T
authors.lastname: Fujisawa
authors.forename: Y
authors.initials: Y
authors.lastname: Hirayama