title: Interferometry based technique for intensity profile measurements of far IR beams.
abstract: We present a novel, to the best of our knowledge, method for measuring the intensity profile of far-IR beams. The method is based on the measurements of nonstationary variation in optical thickness of a fused-silica plate heated by the studied radiation. The optical thickness is observed by means of a reflecting interferometer. Purpose-made experimental setup allows one to measure beams with an aperture of up to 60 mm with a spatial resolution of 1 mm. The accessibility of the utilized technologies and the possibility to easily increase the aperture are the major advantages of this approach. The probable area of application for the method is measurements of beams produced by powerful industrial far-IR lasers.
authors.affiliation: The Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia. so_lo@appl.sci-nnov.ru
authors.forename: Alexander A
authors.initials: AA
authors.lastname: Soloviev
authors.forename: Efim A
authors.initials: EA
authors.lastname: Khazanov
authors.forename: Ilya E
authors.initials: IE
authors.lastname: Kozhevatov
authors.forename: Oleg V
authors.initials: OV
authors.lastname: Palashov
mesh_terms: D002245:Carbon Dioxide / Q000737:chemistry; D004574:Electromagnetic Fields; D004867:Equipment Design; D007368:Interferometry / Q000379:methods*; D007834:Lasers; D015233:Models, Statistical; D016011:Normal Distribution; D055095:Optics and Photonics; D017785:Photons; D015203:Reproducibility of Results; D012822:Silicon Dioxide; D013055:Spectrophotometry, Infrared / Q000379:methods*; D013696:Temperature
chemical_list: D002245:Carbon Dioxide; D012822:Silicon Dioxide