[A study of depositing amorphous SiOx films vis magnetron sputtering by FTIR method].
Amorphous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors' investigation shows that Si-Oy-Si(4-y) (0 < y < or =4), Si6 rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing. The appearance of the three absorption bands was due to the stretching and asymmetric stretching vibration of Si--O--Si bond and the vibration of O--Si--O bond corresponding to the above mentioned structures in the SiOx films.
Wang
Shen-wei
SW
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Yi
Li-xin
LX
Su
Meng-chan
MC
Chen
En-guang
EG
Wang
Yong-sheng
YS