title: [A study of depositing amorphous SiOx films vis magnetron sputtering by FTIR method].
abstract: Amorphous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors' investigation shows that Si-Oy-Si(4-y) (0 < y < or =4), Si6 rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing. The appearance of the three absorption bands was due to the stretching and asymmetric stretching vibration of Si--O--Si bond and the vibration of O--Si--O bond corresponding to the above mentioned structures in the SiOx films.
authors.affiliation: Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
authors.forename: Shen-wei
authors.initials: SW
authors.lastname: Wang
authors.forename: Li-xin
authors.initials: LX
authors.lastname: Yi
authors.forename: Meng-chan
authors.initials: MC
authors.lastname: Su
authors.forename: En-guang
authors.initials: EG
authors.lastname: Chen
authors.forename: Yong-sheng
authors.initials: YS
authors.lastname: Wang