title: Resonant terahertz generation from InN thin films.
abstract: Highly efficient conversion from ultrafast optical pulses to their terahertz (THz) counterparts has been achieved with InN thin films. An average THz output power as high as 0.931 microW has been obtained for an average pump power of 1 W, corresponding to a normalized conversion efficiency of 190% mm(-2). Based on our measured dependences of the THz output power on pump polarization, incident angle, pump power, and InN film thickness, resonance-enhanced optical rectification is one of the most plausible mechanisms for the THz generation in the InN films.
authors.affiliation: Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Mu
authors.forename: Yujie J
authors.initials: YJ
authors.lastname: Ding
authors.forename: Kejia
authors.initials: K
authors.lastname: Wang
authors.forename: Debdeep
authors.initials: D
authors.lastname: Jena
authors.forename: Yuliya B
authors.initials: YB
authors.lastname: Zotova