Gate electrostatics and quantum capacitance of graphene nanoribbons.
Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly nonuniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.
Guo
Jing
J
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA. guoj@ufl.edu
Yoon
Youngki
Y
Ouyang
Yijian
Y
D002244:Carbon / Q000737:chemistry*; D003198:Computer Simulation; D025802:Electric Capacitance; D008956:Models, Chemical; D049329:Nanostructures; D011789:Quantum Theory; D055672:Static Electricity
D002244:Carbon