Tamper resistance in optical excitation transfer based on optical near-field interactions.
We present tamper resistance in optical excitation transfer via optical near-field interactions based on the energy dissipation process occurring locally in nanometric devices such as quantum dots. A theoretical comparison with electrical systems is also shown, focusing on the required environmental conditions. Numerical simulations based on virtual photon models demonstrate high tamper resistance.
Naruse
Makoto
M
National Institute of Information and Communications Technology, Koganei, Tokyo, Japan. naruse@nict.go.jp
Hori
Hirokazu
H
Kobayashi
Kiyoshi
K
Ohtsu
Motoichi
M