title: Gate-defined quantum dots in intrinsic silicon.
abstract: We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.
authors.affiliation: Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, Australia. susan.angus@student.unsw.edu.au
authors.forename: Susan J
authors.initials: SJ
authors.lastname: Angus
authors.forename: Andrew J
authors.initials: AJ
authors.lastname: Ferguson
authors.forename: Andrew S
authors.initials: AS
authors.lastname: Dzurak
authors.forename: Robert G
authors.initials: RG
authors.lastname: Clark
mesh_terms: D036103:Nanotechnology; D053770:Nanowires; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D012825:Silicon