High-throughput screening using porous photoelectrode for the development of visible-light-responsive semiconductors.
A high-throughput screening system for new visible-light-responsive semiconductors for photoelectrodes and photocatalysts was developed in this study. Photoelectrochemical measurement was selected to evaluate visible-light responsiveness, and an automated semiconductor synthesis system that can be used to prepare porous thin-film photoelectrodes of various materials was also developed. As an example application of our system, iron-based binary oxides were selected as target materials for n-type semiconductors. Fe-Ti, Fe-Nb, and Fe-V with various composition ratios were synthesized. Fe-Ti and Fe-Nb binary oxide systems have been studied previously, and our results showed good consistency with previous reports, demonstrating the capability of our system. In the Fe-V system, the highest photocurrent was observed with 50% vanadium. This ratio corresponds to FeVO4, which is expected to be a new visible-light-responsive material. As another example, screening targets of bismuth-based binary oxides were investigated for p-type semiconductor photoelectrodes, and CuBi2O4 was found as a new visible-light-responsive p-type semiconductor.
Arai
Takeo
T
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan.
Konishi
Yoshinari
Y
Iwasaki
Yasukazu
Y
Sugihara
Hideki
H
Sayama
Kazuhiro
K
D001729:Bismuth / Q000737:chemistry; D003300:Copper / Q000737:chemistry; D004566:Electrodes; D007501:Iron / Q000737:chemistry; D008027:Light; D009556:Niobium / Q000737:chemistry; D010087:Oxides / Q000737:chemistry; D010100:Oxygen / Q000737:chemistry; D010777:Photochemistry; D016062:Porosity; D012666:Semiconductors; D014025:Titanium / Q000737:chemistry; D014961:X-Ray Diffraction
D010087:Oxides; D009556:Niobium; D003300:Copper; D014025:Titanium; D007501:Iron; D010100:Oxygen; D001729:Bismuth