title: Tamper resistance in optical excitation transfer based on optical near-field interactions.
abstract: We present tamper resistance in optical excitation transfer via optical near-field interactions based on the energy dissipation process occurring locally in nanometric devices such as quantum dots. A theoretical comparison with electrical systems is also shown, focusing on the required environmental conditions. Numerical simulations based on virtual photon models demonstrate high tamper resistance.
authors.affiliation: National Institute of Information and Communications Technology, Koganei, Tokyo, Japan. naruse@nict.go.jp
authors.forename: Makoto
authors.initials: M
authors.lastname: Naruse
authors.forename: Hirokazu
authors.initials: H
authors.lastname: Hori
authors.forename: Kiyoshi
authors.initials: K
authors.lastname: Kobayashi
authors.forename: Motoichi
authors.initials: M
authors.lastname: Ohtsu