III-V nanowire growth mechanism: V/III ratio and temperature effects.
We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III-V NW growth, support the general validity of the vapor-liquid-solid growth mechanism for III-V NWs, and improve rational control over their growth morphology.
Dayeh
Shadi A
SA
Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093, USA.
Yu
Edward T
ET
Wang
Deli
D
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D006046:Gold / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D013696:Temperature
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; D006046:Gold; C076773:indium arsenide