A carbon nanotube field effect transistor with a suspended nanotube gate.
We investigate theoretically field effect transistors based on single-walled carbon nanotubes (CNTFET) and explore two device geometries with suspended multiwalled carbon nanotubes (MWNT) functioning as gate electrodes. In the two geometries, a doubly or singly clamped MWNT is electrostatically deflected toward the transistor channel, allowing for a variable gate coupling and leading to, for instance, a superior subthreshold slope. We suggest that the proposed designs can be used as nanoelectromechanical switches and as detectors of mechanical motion on the nanoscale.
Tarakanov
Yury A
YA
Department of Applied Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden. tarakano@chalmers.se
Kinaret
Jari M
JM
D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic