Electrically excited infrared emission from InN nanowire transistors.
We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination.
Chen
Jia
J
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. chenjia@ us.ibm.com
Cheng
Guosheng
G
Stern
Eric
E
Reed
Mark A
MA
Avouris
Phaedon
P
D004559:Electric Wiring / Q000295:instrumentation* / Q000379:methods; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D007259:Infrared Rays; D008029:Lighting / Q000295:instrumentation* / Q000379:methods; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D014173:Transistors, Electronic
D007204:Indium; C513701:indium nitride