title: Fully transparent thin-film transistor devices based on SnO2 nanowires.
abstract: We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
authors.forename: Eric N
authors.initials: EN
authors.lastname: Dattoli
authors.forename: Qing
authors.initials: Q
authors.lastname: Wan
authors.forename: Wei
authors.initials: W
authors.lastname: Guo
authors.forename: Yanbin
authors.initials: Y
authors.lastname: Chen
authors.forename: Xiaoqing
authors.initials: X
authors.lastname: Pan
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D013499:Surface Properties; D017971:Tin Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances; D008567:Membranes, Artificial; D017971:Tin Compounds; C045358:stannic oxide