title: Quantum Hall effect in a gate-controlled p-n junction of graphene.
abstract: The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 32 times the quantum of conductance, e(2)/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.
authors.affiliation: School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.
authors.forename: J R
authors.initials: JR
authors.lastname: Williams
authors.forename: L
authors.initials: L
authors.lastname: Dicarlo
authors.forename: C M
authors.initials: CM
authors.lastname: Marcus