Synthesis, characterization, and application of indolo[3,2-b]carbazole semiconductors.
The synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazoles are described. In particular, an extensive characterization of their crystal structures has revealed the importance of the nature of the side chains (alkyl, phenyl, thienyl substituents) on their solid-state organization. These organic materials have exhibited p-type FET behavior with hole mobilities as high as 0.2 cm2 V(-1) s(-1) with an on/off current ratio higher than 10(6). Best results were obtained with phenyl-substituted indolo[3,2-b]carbazoles since the presence of phenyl substituents seems to allow efficient overlap between the oligomeric molecules. More importantly, FET properties were kept constant during several months in air.
Boudreault
Pierre-Luc T
PL
Département de Chimie, Université Laval, Quebec City, Quebec, Canada, G1K 7P4.
Wakim
Salem
S
Blouin
Nicolas
N
Simard
Michel
M
Tessier
Christian
C
Tao
Ye
Y
Leclerc
Mario
M