Fully transparent thin-film transistor devices based on SnO2 nanowires.
We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.
Dattoli
Eric N
EN
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
Wan
Qing
Q
Guo
Wei
W
Chen
Yanbin
Y
Pan
Xiaoqing
X
Lu
Wei
W
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D013499:Surface Properties; D017971:Tin Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D017971:Tin Compounds; C045358:stannic oxide