Fabrication of electrochemical transistor based on pi-conjugate polymer Langmuir-Blodgett film.
We fabricated an efficient organic electrochemical transistor (OECT) composed of polymer Langmuir-Blodgett (LB) film. The pi-conjugated polymer LB film, which was constructed from a poly(N-dodecylacrylamide) (pDDA) and poly(3-hexylthiophene) (PHT) mixture, was used as a conduction channel layer to connect source and drain electrodes. The mixed-polymer LB film was characterized using UV-vis spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and cyclic voltammetry. Subsequent UV spectra measurements, XRD measurements, and AFM measurements show that PHT forms a crystalline lamellar domain in the layered structure of pDDA. The OECT included 10 layers of the mixed-polymer LB film as the conduction channel layer. The OECT showed an on/off ratio of 1.1x10(4) and mobility of 7.5x10(-2) cm2 V(-1) s(-1) at low gate (VG=-1.2 V) and source-drain voltages (VDS=-0.5 V). Moreover, the necessary charge to operate the OECT was 1.1x10(-9) mol of e(-1) cm(-2), which was 2 orders smaller than the value reported using a similar device structure. The relatively high on/off ratio and low charge consumption suggest that this OECT, which is fabricated from pi-conjugated polymer LB films, is applicable to macroelectronic devices.
Matsui
Jun
J
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan. jun_m@tagen.tohoku.ac.jp
Sato
Yoshitaka
Y
Mikayama
Takeshi
T
Miyashita
Tokuji
T
D004563:Electrochemistry; D008567:Membranes, Artificial; D018625:Microscopy, Atomic Force; D011095:Polyethylenes / Q000737:chemistry*; D000644:Quaternary Ammonium Compounds / Q000737:chemistry*; D013056:Spectrophotometry, Ultraviolet; D014173:Transistors, Electronic; D014961:X-Ray Diffraction
D008567:Membranes, Artificial; D011095:Polyethylenes; D000644:Quaternary Ammonium Compounds; C041004:poly-N,N-dimethyl-N,N-diallylammonium chloride