title: [Multispectral color sensor based on vertically stacked structure].
abstract: A novel multispectral color sensor based on vertically stacked structure is introduced. The advantages of this sensor include anti color aliasing, high spatial resolution, elimination of color interpolation and low-pass filter. Its basic principle lies on the silicon material's different of penetration depth of electromagnetic wave with different wavelength, i.e., blue light with short wavelength is mainly absorbed on the surface, while red light with longer wavelength is mainly absorbed at deeper location. The current research and development are related to two pixel structures: the buried pn junctions structure made by standard silicon process, and stacked amorphous silicon and its alloys thin films made by PECVD. The former one adopts standard silicon technology while the latter one adopts amorphous silicon, which has better optical performance, thus greater flexibility in design. The authors focused on the theoretical and experimental analyses of the spectrum mechanisms and output performances with different pixel structures, and discussed-the way for further research.
authors.affiliation: State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China. leohart@126.com
authors.forename: Yuan
authors.initials: Y
authors.lastname: Chen
authors.forename: Zhi-hai
authors.initials: ZH
authors.lastname: Xu
authors.forename: Hua-jun
authors.initials: HJ
authors.lastname: Feng