title: Electrodeposited bismuth telluride nanowire arrays with uniform growth fronts.
abstract: Bismuth telluride (Bi2Te3) nanowires were deposited into porous alumina templates with 35 nm diameter pores by a pulsed-potential electrodeposition method. For growth at temperatures between 1 and 4 degrees C, the nanowires filled 93% of the pores of the template, and the growth fronts were uniform with nanowire lengths of approximately 62-68 microm. There are over ten billion nanowires per square centimeter with aspect ratios approaching 2000:1. Samples were characterized by scanning and transmission electron microscopy, X-ray diffraction, and electron microprobe analysis. The crystalline nanowire arrays are highly oriented in the [110] direction, which is optimal for thermoelectric applications.
authors.affiliation: Department of Chemistry, University of California, Berkeley, California 94720, USA.
authors.forename: Lynn
authors.initials: L
authors.lastname: Trahey
authors.forename: Catherine R
authors.initials: CR
authors.lastname: Becker
authors.forename: Angelica M
authors.initials: AM
authors.lastname: Stacy
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004595:Electroplating / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013499:Surface Properties; D013691:Tellurium / Q000737:chemistry*
chemical_list: D046911:Macromolecular Substances; D013691:Tellurium; D001729:Bismuth