Gate-induced switching and negative differential resistance in a single-molecule transistor: emergence of fixed and shifting states with molecular length.
The quantum transport of a gated polythiophene nanodevice is analyzed using density functional theory and nonequilibrium Green's function approach. For this typical molecular field effect transistor, we prove the existence of two main features of electronic components, i.e., negative differential resistance and good switching. Ab initio based explanations of these features are provided by distinguishing fixed and shifting conducting states, which are shown to arise from the interface and functional molecule, respectively. The results show that proper functional molecules can be used in conjunction with metallic electrodes to achieve basic electronics functionality at molecular length scales.
Farajian
A A
AA
Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005, USA.
Belosludov
R V
RV
Mizuseki
H
H
Kawazoe
Y
Y
Hashizume
T
T
Yakobson
B I
BI