Nanocrystalline SnO2 formation using energetic ion beam.
Nanocrystalline tin oxide (SnO2) thin films grown by RF magnetron sputtering technique were characterized by UV-Visible absorption spectroscopy and Photoluminescence spectroscopy. From atomic force microscopic (AFM) and Glancing angle X-ray diffraction (GAXRD) measurements, the radius of grains was found to be approximately 6+/-2 nm. The thin films were bombarded with 250 keV Xe2+ ion beam to observe the stability of nanophases against radiation. For ion bombarded films, optical absorption band edge is shifted towards red region. Atomic force microscopy studies show that the radius of the grains was increased to approximately 8 +/- 1 nm and the grains were nearly uniform in size. The size of the grains has been reduced after ion bombardment in the case of films grown on Si. During this process, defects such as vacancies, voids were generated in the films as well as in the substrates. Ion bombardment induces local temperature increase of thin films causing melting of films. Ion beam induced defects enhances the diffusion of atoms leading to uniformity in size of grains. The role of matrix on ion beam induced grain growth is discussed.
Mohanty
T
T
School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India.
Batra
Y
Y
Tripathi
A
A
Kanjilal
D
D
D003460:Crystallization / Q000379:methods*; D020450:Heavy Ions; D008163:Luminescent Measurements; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008422:Materials Testing; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties / Q000528:radiation effects; D017971:Tin Compounds / Q000737:chemistry* / Q000528:radiation effects*
D046911:Macromolecular Substances; D017971:Tin Compounds; C045358:stannic oxide