Rabi splitting with excitons in effective (near) zero-index media.
We study theoretically the properties of a thin film of a semiconductor embedded in the interface of two kinds of single-negative materials. At some frequencies the structure with suitable size is equivalent to an effective (near) zero-index medium. The coupling of exciton resonance in the semiconductor and the interface mode in a zero-index medium leads to Rabi splitting. Compared with Rabi splitting observed in cavities, the splitting modes in zero-index media are robust against the scaling change of the length and direction of incident wave.
Jiang
Hai-Tao
HT
Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, China. jiang-haitao@mail.tongji.edu.cn
Chen
Hong
H
Zhu
Shi-Yao
SY