Morphology and composition of InAs/GaAs quantum dots.
Surface compositional maps of self-organized InAs/GaAs quantum dots were obtained with laterally resolved photoemission spectroscopy. We found a surface In concentration of about 0.85 at the center of the islands which decreases to 0.75 on the wetting layer. Comparison with concentration values found in the core of similar dots suggests a strong In segregation on the topmost surface layers of the dots and on the surrounding wetting layer. Furthermore, the morphological properties of the dots such as size and density have been measured with plan-view transmission electron microscopy and low energy electron microscopy.
Heun
S
S
Laboratorio Nazionale TASC INFM-CNR, Area Science Park-Basovizza, 1-34012 Trieste, Italy.
Biasiol
G
G
Grillo
V
V
Carlino
E
E
Sorba
L
L
Golinelli
G B
GB
Locatelli
A
A
Mentes
T O
TO
Guo
F Z
FZ
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots; D013499:Surface Properties
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide