SiGe optoelectronic metal-oxide semiconductor field-effect transistor.
We propose a novel semiconductor optoelectronic switch that is a fusion of a Ge optical detector and a Si metal-oxide semiconductor field-effect transistor (MOSFET). The device operation is investigated with simulations and experiments. The switch can be fabricated at the nanoscale with extremely low capacitance. This device operates in telecommunication standard wavelengths, hence providing the surrounding Si circuitry with noise immunity from signaling. The Ge gate absorbs light, and the gate photocurrent is amplified at the drain terminal. Experimental current gain of up to 1000x is demonstrated. The device exhibits increased responsivity (approximately 3.5x) and lower off-state current (approximately 4x) compared with traditional detector schemes.
Okyay
Ali K
AK
Center for Integrated Systems, Stanford University, Stanford, California 94305, USA. aokyay@stanford.edu
Pethe
Abhijit J
AJ
Kuzum
Duygu
D
Latif
Salman
S
Miller
David A
DA
Saraswat
Krishna C
KC