In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system.
We have developed an in situ mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions. This mask can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; thus, device structures can be fabricated without exposing the sample surfaces to air. Moreover, this mask enables the observation of reflection high-energy electron diffraction during growth with the mask positioned on the sample holder and provides for the formation of marker layers for ensuring alignment in the processes following the selective growth. To explore the effectiveness of the proposed in situ mask, we used it to grow quantum dot (QD) structures in narrow regions and verified the perfect selectivity of the QD growth. The grown QDs exhibited high optical quality with a photoluminescence peak at approximately 1.30 mum and a linewidth of 30 meV at room temperature. The proposed technique can be applied for the integration of microstructures into optoelectronic functional devices.
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan. s-ohkouchi@ab.jp.nec.com
Shunsuke
S
Ohkouchi
Yusui
Y
Nakamura
Naoki
N
Ikeda
Yoshimasa
Y
Sugimoto
Kiyoshi
K
Asakawa
D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D003460:Crystallization / Q000295:instrumentation* / Q000379:methods; D020450:Heavy Ions; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D045663:Quantum Dots; D013048:Specimen Handling / Q000295:instrumentation* / Q000379:methods
D001152:Arsenicals; D007204:Indium; C076773:indium arsenide