Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping.
As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
Wolter
W
Siemons
Gertjan
G
Koster
Hideki
H
Yamamoto
Walter A
WA
Harrison
Gerald
G
Lucovsky
Theodore H
TH
Geballe
Dave H A
DH
Blank
Malcolm R
MR
Beasley