Hidden charge 2e Boson in doped Mott insulators.
We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).
Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801 USA.
Robert G
RG
Leigh
Philip
P
Phillips
Ting-Pong
TP
Choy