High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime.
We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. Passive Q-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO(4) crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 nm, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 microJ energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.
Institute of Applied Physics, Friedrich-Schiller-University of Jena, Albert-Einstein-Strasse 15, 07745 Jena, Germany.
D
D
Nodop
J
J
Limpert
R
R
Hohmuth
W
W
Richter
M
M
Guina
A
A
Tünnermann