Enhanced magnetotransport at high bias in quasimagnetic tunnel junctions with EuS spin-filter barriers.
In quasimagnetic tunnel junctions with a EuS spin-filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions. This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory show excellent agreement with experiment.
Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
T
T
Nagahama
T S
TS
Santos
J S
JS
Moodera