Oxygen vacancies in high dielectric constant oxide-semiconductor films.
We provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in metal-ultrathin oxide-semiconductor heterostructures, calculating its effect upon the band bending and interfacial oxidation rates and showing good experimental agreement with the predictions.
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Supratik
S
Guha
Vijay
V
Narayanan