Observation of strong electron dephasing in highly disordered Cu93Ge4Au3 thin films.
We report the observation of strong electron dephasing in a series of disordered Cu93Ge4Au3 thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a lnT-dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.
Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan.
S M
SM
Huang
T C
TC
Lee
H
H
Akimoto
K
K
Kono
J J
JJ
Lin