Thin film compressive stresses due to adatom insertion into grain boundaries.
Atomic simulations of the growth of polycrystalline Ni demonstrate that deposited atoms incorporate into the film at boundaries, resulting in compressive stress generation. Incorporated atoms can also leave the boundaries and thus relieve compressive stress. This leads to a complex interplay between growth stress, adatom incorporation, and surface structure. A simple, theoretical model that accounts for grain size effects is proposed and is in good agreement with simulation results.
Pao
Chun-Wei
CW
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Foiles
Stephen M
SM
Webb
Edmund B
EB
Srolovitz
David J
DJ
Floro
Jerrold A
JA