Experimental observation of a torus doubling of a metal/ferroelectric film/semiconductor capacitor.
A metal-ferroelectric-semiconductor (MFS) structure was used as a nonlinear capacitor in a series resonance circuit. The following materials were used as components of the MFS structure: aluminium as the metal electrode, Bi4Ti3O12 film as the ferroelectric, and p-type silicon as the semiconductor. The system was driven by a single frequency at suitably chosen amplitudes. Besides the sequences of period-doubling bifurcations which were already observed in the series resonance circuit with a pure ferroelectric capacitor, we found regions with torus-doubling bifurcations by varying the frequency of the driving voltage at suitably high amplitudes. Comparing the behaviour of the series resonance circuit with a pure ferroelectric capacitor and with the MFS structure, we attribute the reason for the new effect of torus doubling to the properties of the ferroelectric-semiconductor boundary layer.
Department of Physics, Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, 06108 Halle, Germany. martin.diestelhorst@physik.uni-halle.de
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