Enhanced stability of 1D molecular lines on the H-terminated Si(001) surface.
We present a facile method for the self-directed growth of 1D molecular lines on the H-terminated Si(001) surface. Instead of a previously employed single dangling bond, we here employ a single H-free Si dimer as a reaction site, resulting in an enhanced stability of the radical intermediate for the O-phthalaldehyde (OP) molecule containing two carbonyl groups. This radical intermediate easily abstracts two H atoms from a neighboring Si dimer, thereby allowing the chain reaction for a 1D molecular line. Such a fabricated OP line will be stable at higher temperatures compared to previously reported alkene lines because of its enhanced stability.
BK21 Program Division of Advanced Research and Education in Physics, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.
Jin-Ho
JH
Choi
Jun-Hyung
JH
Cho