Surface transfer p-type doping of epitaxial graphene.
Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore. phycw@nus.edu.sg
Wei
W
Chen
Shi
S
Chen
Dong Chen
DC
Qi
Xing Yu
XY
Gao
Andrew Thye Shen
AT
Wee