Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
We have studied the effect of temperature on the growth of InAs quantum dots (QDs) grown on a strained GaAs layer. The 2.0 nm thick, strained GaAs was obtained by growing it on a relaxed In0.15Ga0.85As layer. We observed that the density of QDs grown in this manner strongly depends on the growth temperature. A change in the growth temperature from 510 degrees C to 460 degrees C resulted in a large increase in the QD density from 2.3 x 10(10) cm(-2) to 6.7 x 10(10) cm(-2) and a sharp reduction in their height from 8.0 nm to 3.0 nm. Photoluminescence (PL) results from these QDs are also presented.
Ahmad
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I
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284-3068, USA.
Avrutin
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V
Morkoç
H
H
Moore
J C
JC
Baski
A A
AA
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D053758:Nanoparticles / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D045663:Quantum Dots; D013696:Temperature
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide