Selective plating for junction delineation in silicon nanowires.
The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.
Eichfeld
Chad M
CM
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, Steidle Building, University Park, Pennsylvania 16802, USA.
Wood
Carolyn
C
Liu
Bangzhi
B
Eichfeld
Sarah M
SM
Redwing
Joan M
JM
Mohney
Suzanne E
SE
D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D012825:Silicon