title: Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
abstract: Al0.37Ga0.63As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core--shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core--shell structure formed during growth as a consequence of the different Al and Ga adatom diffusion lengths.
authors: Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada.
authors: Chen
authors: C
authors: Chen
authors: Shyemaa
authors: S
authors: Shehata
authors: Cécile
authors: C
authors: Fradin
authors: Ray
authors: R
authors: LaPierre
authors: Christophe
authors: C
authors: Couteau
authors: Gregor
authors: G
authors: Weihs
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D008027:Light; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D010777:Photochemistry / Q000379:methods*; D045663:Quantum Dots; D013499:Surface Properties
chemical_list: D017607:Aluminum Compounds; D001152:Arsenicals; D046911:Macromolecular Substances; C043055:gallium arsenide; D005708:Gallium