Temperature dependence of the Raman spectra of graphene and graphene multilayers.
We investigated the temperature dependence of the frequency of G peak in the Raman spectra of graphene on Si/SiO2 substrates. The micro-Raman spectroscopy was carried out under the 488 nm laser excitation over the temperature range from -190 to +100 degrees C. The extracted value of the temperature coefficient of G mode of graphene is chi = -0.016 cm-1/ degrees C for the single layer and chi = -0.015 cm-1/ degrees C for the bilayer. The obtained results shed light on the anharmonic properties of graphene.
Calizo
I
I
Nano-Device Laboratory, Department of Electrical Engineering, University of California-Riverside, Riverside, California 92521, USA.
Balandin
A A
AA
Bao
W
W
Miao
F
F
Lau
C N
CN
D002244:Carbon / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013059:Spectrum Analysis, Raman / Q000379:methods*; D013499:Surface Properties; D013696:Temperature
D046911:Macromolecular Substances; D002244:Carbon