title: Dual-band pixelless upconversion imaging devices.
abstract: We have proposed a type of mid-infrared (MIR) and far-infrared (FIR) dual-band imaging device, which employs the photon frequency upconversion concept in a GaN/AlGaN MIR and FIR dual-band detector integrated with a GaN/AlGaN violet light emitting diode. On the basis of the photoresponse of single-period GaN/AlGaN dual-band detectors, we present the detailed optimization of multiperiod GaN emitter/AlGaN barrier detectors and their applications to dual-band pixelless upconversion imaging. Satisfying images have been received through the analysis of the modulation transfer function and the upconversion efficiency in the GaN/AlGaN dual-band pixelless upconverters, which exhibit good image resolution, high quantum efficiency, and negligible cross talk.
authors: Department of Physics, Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China.
authors: Le Ke
authors: le K
authors: Wu
authors: Hui Lian
authors: HL
authors: Hao
authors: Wen Zhong
authors: WZ
authors: Shen
authors: Gamini
authors: G
authors: Ariyawansa
authors: A G Unil
authors: AG
authors: Perera
authors: Steven G
authors: SG
authors: Matsik