title: Temperature dependence of the Raman spectra of graphene and graphene multilayers.
abstract: We investigated the temperature dependence of the frequency of G peak in the Raman spectra of graphene on Si/SiO2 substrates. The micro-Raman spectroscopy was carried out under the 488 nm laser excitation over the temperature range from -190 to +100 degrees C. The extracted value of the temperature coefficient of G mode of graphene is chi = -0.016 cm-1/ degrees C for the single layer and chi = -0.015 cm-1/ degrees C for the bilayer. The obtained results shed light on the anharmonic properties of graphene.
authors: Nano-Device Laboratory, Department of Electrical Engineering, University of California-Riverside, Riverside, California 92521, USA.
authors: I
authors: I
authors: Calizo
authors: A A
authors: AA
authors: Balandin
authors: W
authors: W
authors: Bao
authors: F
authors: F
authors: Miao
authors: C N
authors: CN
authors: Lau
mesh_terms: D002244:Carbon / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013059:Spectrum Analysis, Raman / Q000379:methods*; D013499:Surface Properties; D013696:Temperature
chemical_list: D046911:Macromolecular Substances; D002244:Carbon