title: Strong extinction of a far-field laser beam by a single quantum dot.
abstract: Through the utilization of index-matched GaAs immersion lens techniques, we demonstrate a record extinction (12%) of a far-field focused laser beam by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection.
authors: Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215, USA.
authors: A N
authors: AN
authors: Vamivakas
authors: M
authors: M
authors: Atatüre
authors: J
authors: J
authors: Dreiser
authors: S T
authors: ST
authors: Yilmaz
authors: A
authors: A
authors: Badolato
authors: A K
authors: AK
authors: Swan
authors: B B
authors: BB
authors: Goldberg
authors: A
authors: A
authors: Imamoglu
authors: M S
authors: MS
authors: Unlü
mesh_terms: D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects*; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects*; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects*; D007834:Lasers; D008422:Materials Testing; D036103:Nanotechnology / Q000379:methods*; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide