title: Optical and electrical properties between 0.4 and 12 microm for Sn-doped In2O3 films by pulsed laser deposition and cathode sputtering.
abstract: Optical properties of Sn-doped In(2)O(3) (ITO) have been studied in the optical range of 0.4-12 microm. A deposition has been made on BK7 glass, magnesium fluoride, sapphire, and zinc sulfide substrates. The layers have been characterized by their optical properties, DC electrical sheet resistivity, and Hall mobility. Sheet resistivity lies in the range of 6.8-318 Omega/sq for thicknesses between 16 and 280 nm. The best carrier mobility is obtained on BK7 and sapphire substrates, up to approximately 50 cm(2)/V s. The material shows good infrared transparency in the 3-5 microm range on magnesium fluoride and 0.4-4 microm on sapphire, and it is usable for practical applications up to 12 microm on zinc sulfide. Simulations have been carried out for optical indices and spectra calculations. The Drude model has been used to exploit the results in either direction: from electrical measured data to the simulation of optical spectra and indices, and from measured optical spectra to simulated optical indices and electrical parameters (mobility, carrier density). Hall mobility is considered a worthy and convenient material quality criteria for materials aimed at optics.
authors: Thales Research & Technology, Route Départementale 128, Palaiseau cedex, France. daniel.dubreuil@thalesgroup.com
authors: Daniel
authors: D
authors: Dubreuil
authors: Jean-Pierre
authors: JP
authors: Ganne
authors: Gérard
authors: G
authors: Berginc
authors: Frédéric
authors: F
authors: Terracher