title: Gate coupling and charge distribution in nanowire field effect transistors.
abstract: We have modeled the field and space charge distributions in back-gate and top-gate nanowire field effect transistors by solving the three-dimensional Poisson's equation numerically. It is found that the geometry of the gate oxide, the semiconductivity of the nanowire, and the finite length of the device profoundly affect both the total amount and the spatial distribution of induced charges in the nanowire, in stark contrast to the commonly accepted picture where metallic dielectric properties and infinite length are assumed for the nanowire and the specific geometry of the gate oxide is neglected. We provide a comprehensive set of numerical correction factors to the analytical capacitance formulas, as well as to numerical calculations that neglect the semiconductivity and finite length of the nanowire, that are frequently used for quantifying carrier transport in nanowire field effect transistors.
authors: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
authors: D R
authors: DR
authors: Khanal
authors: J
authors: J
authors: Wu
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008962:Models, Theoretical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D055672:Static Electricity; D014173:Transistors, Electronic