title: Crystal growth of silicon and germanium in metal films.
abstract: Amorphous silicon in contact with silver films and amorphous germanium in contact with aluminum films form crystalline precipitates when heated to temperatures well below those at which any liquid phase is present. Crystallization occurs by an initial dissolution of the semiconductor into the metal filmsolvent followed by the growth of crystals out of the solvent.
authors.forename: G
authors.initials: G
authors.lastname: Ottaviani
authors.forename: D
authors.initials: D
authors.lastname: Sigurd
authors.forename: V
authors.initials: V
authors.lastname: Marrello
authors.forename: J O
authors.initials: JO
authors.lastname: McCaldin
authors.forename: J W
authors.initials: JW
authors.lastname: Mayer