Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.
Eymery
Joël
J
CEA Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Service des Matériaux et Microstructures, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France. joel.eymery@cea.fr
Rieutord
François
F
Favre-Nicolin
Vincent
V
Robach
Odile
O
Niquet
Yann-Michel
YM
Fröberg
Linus
L
Mårtensson
Thomas
T
Samuelson
Lars
L
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods; D004548:Elasticity; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D013314:Stress, Mechanical; D013499:Surface Properties; D014961:X-Ray Diffraction / Q000379:methods*
D001152:Arsenicals; D046911:Macromolecular Substances; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide