title: Epitaxial growth of diamond films on si(111) at room temperature by mass-selected low-energy c+ beams.
abstract: Diamond films ( approximately 0.7 micrometer thick) have been epitaxially grown on Si(111) substrates at room temperature with mass-selected 120-electronvolt C(+) ions. The diamond reflections observed in x-ray diffraction are well localized at their predicted positions, indicating that (i) the diamond(111) and (220) planes are parallel to the Si(111) and (220), respectively; (ii) the diamond rotational spread around its (111) normal is approximately 1.7 degrees ; and (iii) the mosaic block size is approximately 150 A. The film growth is discussed in terms of subplantation-a shallow subsurface implantation model. This discovery is an important step toward diamond semiconductor devices.
authors.forename: J L
authors.initials: JL
authors.lastname: Robertson
authors.forename: S C
authors.initials: SC
authors.lastname: Moss
authors.forename: Y
authors.initials: Y
authors.lastname: Lifshitz
authors.forename: S R
authors.initials: SR
authors.lastname: Kasi
authors.forename: J W
authors.initials: JW
authors.lastname: Rabalais
authors.forename: G D
authors.initials: GD
authors.lastname: Lempert
authors.forename: E
authors.initials: E
authors.lastname: Rapoport