Close-packed noncircular nanodevice pattern generation by self-limiting ion-mill process.
We describe a self-limiting, low-energy argon-ion-milling process that enables noncircular device patterns, such as squares or hexagons, to be formed using precursor arrays of uniform circular openings in poly(methyl methacrylate) defined using electron beam lithography. The proposed patterning technique is of particular interest for bit-patterned magnetic recording medium fabrication, where square magnetic bits result in improved recording system performance. Bit-patterned magnetic medium is among the primary candidates for the next generation magnetic recording technologies and is expected to extend the areal bit density limits far beyond 1 Tbit/in(2). The proposed patterning technology can be applied either for direct medium prototyping or for manufacturing of nanoimprint lithography templates or ion beam lithography stencil masks that can be utilized in mass production.
Parekh
Vishal A
VA
Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA.
Ruiz
Ariel
A
Ruchhoeft
Paul
P
Brankovic
Stanko
S
Litvinov
Dmitri
D
D003460:Crystallization / Q000379:methods*; D007477:Ions; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D019904:Polymethyl Methacrylate / Q000737:chemistry* / Q000528:radiation effects*; D013499:Surface Properties
D007477:Ions; D046911:Macromolecular Substances; D019904:Polymethyl Methacrylate