Suspended heated silicon platform for rapid thermal control of surface reactions with application to carbon nanotube synthesis.
Rapid continuous thermal control of chemical reactions such as those for chemical vapor deposition (CVD) growth of nanotubes and nanowires cannot be studied using traditional reactors such as tube furnaces, which have large thermal masses. We present the design, modeling, and verification of a simple, low-cost reactor based on resistive heating of a suspended silicon platform. This system achieves slew rates exceeding 100 degrees C/s, enabling studies of rapid heating and thermal cycling. Moreover, the reaction surface is available for optical monitoring. A first-generation CVD apparatus encapsulates the heated silicon platform inside a sealed quartz tube, and initial experiments demonstrate growth of films of tangled single-wall and aligned multiwall carbon nanotubes using this system. The reactor can be straightforwardly scaled to larger or smaller substrate sizes and may be extended for a wide variety of reactions, for performing in situ reaction diagnostics, for chip-scale growth of nanostructures, and for rapid thermal processing of microelectronic and micromechanical devices.
van Laake
Lucas
L
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Hart
Anastasios John
AJ
Slocum
Alexander H
AH
D003199:Computer Systems; D017076:Computer-Aided Design; D003460:Crystallization / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006361:Heating / Q000295:instrumentation* / Q000379:methods; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012825:Silicon; D013048:Specimen Handling / Q000295:instrumentation* / Q000379:methods; D013499:Surface Properties
D037742:Nanotubes, Carbon; D012825:Silicon