High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser.
A cw Pr(3+):LiYF(4) laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.
Hashimoto
Kohei
K
Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan.
Kannari
Fumihiko
F
D004867:Equipment Design; D005459:Fluorides / Q000737:chemistry; D005708:Gallium / Q000737:chemistry; D007477:Ions; D007834:Lasers; D008027:Light; D018020:Lithium Compounds / Q000737:chemistry; D055095:Optics and Photonics / Q000295:instrumentation*; D009991:Oscillometry; D011221:Praseodymium / Q000737:chemistry*; D013696:Temperature
D007477:Ions; D018020:Lithium Compounds; C027651:lithium fluoride; C473348:gallium nitride; D005708:Gallium; D011221:Praseodymium; D005459:Fluorides