title: New methods of processing silicon slices.
abstract: Through the use of room-temperature, radio-frequency plasma ionization of gases, the insulating, conducting, and semiconducting materials associated with the fabrication of silicon integrated circuits can be patterned to submicrometer dimensions. A tutorial description is presented of the fabrication techniques used in the past with an overview of where plasma processing has made noteworthy improvements in the lithography of materials.
authors.forename: T C
authors.initials: TC
authors.lastname: Penn