title: Optically transparent diamond electrode for use in ir transmission spectroelectrochemical measurements.
abstract: A new analytical spectroelectrochemical methodology is reported on that utilizes an optically transparent boron-doped diamond thin film. The film was deposited on undoped Si by microwave-assisted chemical vapor deposition using a 4-h growth with a 0.5% CH4/H2 source gas mixture and 2 ppm B2H6 added for boron doping. The thin-film electrode possessed a transparency of 40-60% in the mid- and far-IR regions of the electromagnetic spectrum. The physical, electrical, optical, and electrochemical properties of the electrode were characterized by scanning electron microscopy, Raman spectroscopy, X-ray diffraction, four-point probe electrical resistance measurements, IR spectroscopy, and cyclic voltammetry. The film's electrochemical behavior was evaluated using both aqueous (Fe(CN)(6)3-/4-, methyl viologen, Ru(NH3)(6)3+/2+, and IrCl(6)2-/3-) and nonaqueous (ferrocene) redox systems. The film exhibited a low and stable background current and a nearly reversible voltammetric response for all these redox systems. The diamond/Si optically transparent electrode (OTE) and a thin-layer transmission cell were used to record the spectroelectrochemical response for 10 mM Fe(CN)(6)3-/4- in 1 M KCl. Difference IR spectra (oxidized minus reduced), recorded at various applied potentials, showed that the CN vibrational mode at 2039 cm-1 for Fe(CN)(6)4- reversibly shifted to 2116 cm-1 upon oxidation to Fe(CN)(6)3-, as expected. Difference IR spectra (oxidized minus reduced) were also recorded for 20 mM ferrocene in 0.1 M TBABF4/CH3CN. A shift of the C-H bending mode of the cyclopentadienyl ring from 823 to 857 cm-1 occurred upon oxidation of ferrocene to ferricenium. The key finding from the work is that the diamond OTE provides sensitive, reproducible, and stable spectroelectrochemical responses for aqueous and nonaqueous redox systems in the mid- and far-IR.
authors.affiliation: Department of Chemistry, Michigan State University, East Lansing, Michigan 48824-1322, USA.
authors.forename: Yingrui
authors.initials: Y
authors.lastname: Dai
authors.forename: Denis A
authors.initials: DA
authors.lastname: Proshlyakov
authors.forename: Jerzy K
authors.initials: JK
authors.lastname: Zak
authors.forename: Greg M
authors.initials: GM
authors.lastname: Swain
mesh_terms: D018130:Diamond; D004563:Electrochemistry / Q000379:methods*; D004566:Electrodes; D013055:Spectrophotometry, Infrared / Q000379:methods*; D014961:X-Ray Diffraction