title: High-Pressure Transitions of Germanium and a New High-Pressure Form of Germanium.
abstract: Some transitions in germanium and other semiconductor systems have been detected after very long exposure to high pressures followed by various quenching techniques. In the case of Ge, a new high-pressure polymorph, Ge-IV, has been synthesized above 110 kilobars with a body-centered-cubic structure. The pressure for the Ge-I right harpoon-up Ge-III (body-centered-tetragonal structure) transition has been revised from about 120 to 25 kilobars at 30 degrees C. The transition from the Ge-I (diamond structure) to the Ge-II (white tin structure) is metastable up to 140 kilobars. Thus some phase diagrams based on discontinuities observed in essentially dynamic systems may be inaccurate.
authors.forename: C H
authors.initials: CH
authors.lastname: Bates
authors.forename: F
authors.initials: F
authors.lastname: Dachille
authors.forename: R
authors.initials: R
authors.lastname: Roy