title: Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy.
abstract: Studies of C(60) overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C(60) monolayer.
authors.forename: Y Z
authors.initials: YZ
authors.lastname: Li
authors.forename: J C
authors.initials: JC
authors.lastname: Patrin
authors.forename: M
authors.initials: M
authors.lastname: Chander
authors.forename: J H
authors.initials: JH
authors.lastname: Weaver
authors.forename: L P
authors.initials: LP
authors.lastname: Chibante
authors.forename: R E
authors.initials: RE
authors.lastname: Smalley