title: Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO2/Pb(Zr0.52Ti0.48)O3 Heterostructures.
abstract: A ferroelectric field effect in epitaxial thin film SrCuO(2)/Pb(Zr(0.52)Ti(0.48))O(3) heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO(2) layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr(0.52)Ti(0.48))O(3) layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO(2) and Pb(Zr(0.52)Ti(0.48))O(3). This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO(2).
authors.forename: C H
authors.initials: CH
authors.lastname: Ahn
authors.forename: J M
authors.initials: JM
authors.lastname: Triscone
authors.forename: N
authors.initials: N
authors.lastname: Archibald
authors.forename: M
authors.initials: M
authors.lastname: Decroux
authors.forename: R H
authors.initials: RH
authors.lastname: Hammond
authors.forename: T H
authors.initials: TH
authors.lastname: Geballe
authors.forename: O
authors.initials: O
authors.lastname: Fischer
authors.forename: M R
authors.initials: MR
authors.lastname: Beasley