title: Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals.
abstract: Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.
authors.forename: D
authors.initials: D
authors.lastname: Cahen
authors.forename: J M
authors.initials: JM
authors.lastname: Gilet
authors.forename: C
authors.initials: C
authors.lastname: Schmitz
authors.forename: L
authors.initials: L
authors.lastname: Chernyak
authors.forename: K
authors.initials: K
authors.lastname: Gartsman
authors.forename: A
authors.initials: A
authors.lastname: Jakubowicz