Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals.
Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.
Cahen
D
D
Gilet
J M
JM
Schmitz
C
C
Chernyak
L
L
Gartsman
K
K
Jakubowicz
A
A