title: Chemistry of organometallic compounds on silicon: the first step in film growth.
abstract: The continuous decrease in size of electronic devices has reached a critical point at which the molecular-level understanding of chemical processes is imperative. Metal-containing films, an important part of every circuit, are currently deposited from a myriad of organometallic compounds, in order to control the first stages of film growth and ultimately produce an atomically defined interface. This article outlines recent molecular-level investigations on reactions of organometallic compounds with silicon surfaces. The role of surface structure and chemical state is placed in a framework of future challenges and opportunities for applications in electronics.
authors.affiliation: Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA.
authors.forename: Juan Carlos F
authors.initials: JC
authors.lastname: Rodríguez-Reyes
authors.forename: Andrew V
authors.initials: AV
authors.lastname: Teplyakov