title: Direct Observation of Dislocation Core Structures in CdTe/GaAs(001).
abstract: A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen.
authors.forename: A J
authors.initials: AJ
authors.lastname: McGibbon
authors.forename: S J
authors.initials: SJ
authors.lastname: Pennycook
authors.forename: J E
authors.initials: JE
authors.lastname: Angelo