title: InAs/InP radial nanowire heterostructures as high electron mobility devices.
abstract: Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAs/InP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11,500 cm(2)/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/microm, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/InP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
authors.affiliation: Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
authors.forename: Xiaocheng
authors.initials: X
authors.lastname: Jiang
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong
authors.forename: Sungwoo
authors.initials: S
authors.lastname: Nam
authors.forename: Fang
authors.initials: F
authors.lastname: Qian
authors.forename: Yat
authors.initials: Y
authors.lastname: Li
authors.forename: Charles M
authors.initials: CM
authors.lastname: Lieber
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods; D004559:Electric Wiring / Q000295:instrumentation*; D004579:Electron Transport; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide