title: Strained-layer epitaxy of germanium-silicon alloys.
abstract: Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics.
authors.forename: J C
authors.initials: JC
authors.lastname: Bean