title: Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths.
abstract: Optical properties of InAs/GaAs quantum dots in micropillar cavities emitting at 1.3 microm are studied by time-resolved microphotoluminescence. The Purcell effect is observed with an enhancement of the decay rate by a factor of two for quantum dots in resonance with the cavity mode.
authors.affiliation: Ecole Polytechnique Fédérale de Lausanne (EPFL), IPEQ, Station 3, CH-1015, Lausanne, Switzerland. nicolas.chauvin@epfl.ch
authors.forename: Nicolas
authors.initials: N
authors.lastname: Chauvin
authors.forename: Laurent
authors.initials: L
authors.lastname: Balet
authors.forename: Blandine
authors.initials: B
authors.lastname: Alloing
authors.forename: Carl
authors.initials: C
authors.lastname: Zinoni
authors.forename: Lianhe
authors.initials: L
authors.lastname: Li
authors.forename: Andrea
authors.initials: A
authors.lastname: Fiore
authors.forename: Laurent
authors.initials: L
authors.lastname: Grenouillet
authors.forename: Philippe
authors.initials: P
authors.lastname: Gilet
authors.forename: Nicolas
authors.initials: N
authors.lastname: Olivier
authors.forename: Alexei
authors.initials: A
authors.lastname: Tchelnokov
authors.forename: Marlène
authors.initials: M
authors.lastname: Terrier
authors.forename: Jean-Michel
authors.initials: JM
authors.lastname: Gérard
mesh_terms: D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D003198:Computer Simulation; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D008422:Materials Testing; D008962:Models, Theoretical; D045663:Quantum Dots; D013685:Telecommunications
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide