Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths.
Optical properties of InAs/GaAs quantum dots in micropillar cavities emitting at 1.3 microm are studied by time-resolved microphotoluminescence. The Purcell effect is observed with an enhancement of the decay rate by a factor of two for quantum dots in resonance with the cavity mode.
Chauvin
Nicolas
N
Ecole Polytechnique Fédérale de Lausanne (EPFL), IPEQ, Station 3, CH-1015, Lausanne, Switzerland. nicolas.chauvin@epfl.ch
Balet
Laurent
L
Alloing
Blandine
B
Zinoni
Carl
C
Li
Lianhe
L
Fiore
Andrea
A
Grenouillet
Laurent
L
Gilet
Philippe
P
Olivier
Nicolas
N
Tchelnokov
Alexei
A
Terrier
Marlène
M
Gérard
Jean-Michel
JM
D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D003198:Computer Simulation; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D008422:Materials Testing; D008962:Models, Theoretical; D045663:Quantum Dots; D013685:Telecommunications
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide