Strain tuning of the photocurrent spectrum in single-wall carbon nanotubes.
The effect of uniaxial strain on the photocurrent spectrum of semiconducting single-wall carbon nanotubes is measured. The energy of the lowest-lying free electron transition is observed to shift with strain as predicted by a simple noninteracting model. The higher-order transitions also shift with strain, but being excitonic, their strain dependence differs from the predictions for the free carrier states. An anomalous photocurrent increase is also observed near the ground-state transition and is attributed to the formation of optically active defect states within the nanotube band gap.
Gopinath
Prasanth
P
Department of Electrical and Computer Engineering, University of Louisville, Louisville, Kentucky 40292, USA.
Mohite
Aditya
A
Shah
Hemant
H
Lin
Ji-Tzuoh
JT
Alphenaar
Bruce W
BW
D003198:Computer Simulation; D004548:Elasticity; D004553:Electric Conductivity; D008027:Light; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure; D010316:Particle Size; D010777:Photochemistry / Q000379:methods*; D013314:Stress, Mechanical
D037742:Nanotubes, Carbon