title: Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.
abstract: Diameter-dependent compositions of Si(1-x)Ge(x) nanowires grown by a vapor-liquid-solid mechanism using SiH(4) and GeH(4) precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si(1-x)Ge(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below approximately 50 nm. The size-dependent nature of Ge concentration in Si(1-x)Ge(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.
authors: Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Xi
authors: X
authors: Zhang
authors: Kok-Keong
authors: KK
authors: Lew
authors: Pramod
authors: P
authors: Nimmatoori
authors: Joan M
authors: JM
authors: Redwing
authors: Elizabeth C
authors: EC
authors: Dickey
mesh_terms: D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D005857:Germanium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D044367:Phase Transition; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012996:Solutions; D013499:Surface Properties
chemical_list: D005740:Gases; D046911:Macromolecular Substances; D012996:Solutions; D005857:Germanium; D012825:Silicon