Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.
Verheijen
Marcel A
MA
Philips Research Laboratories Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands. m.a.verheijen@philips.com
Algra
Rienk E
RE
Borgström
Magnus T
MT
Immink
George
G
Sourty
Erwan
E
Enckevort
Willem J P van
WJ
Vlieg
Elias
E
Bakkers
Erik P A M
EP
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D021621:Imaging, Three-Dimensional / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
D001152:Arsenicals; D046911:Macromolecular Substances; D010720:Phosphines; C043055:gallium arsenide; C485338:gallium phosphide; D005708:Gallium