title: Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography.
abstract: GaAs specimens containing p-n junctions have been prepared using focused ion beam (FIB) milling for examination using off-axis electron holography. By lowering the FIB operating voltage from 30 to 8 kV, we have shown a systematic reduction of the electrically 'inactive' thickness from 220 to 100 nm, resulting in a significant increase in the step in phase measured across the junctions as well as an improvement in the signal-to-noise ratio. We also show that the step in phase measured across the junctions can be influenced by the intensity of the electron beam.
authors: CEA LETI - Minatec, Grenoble, Cedex 9, France. david.cooper@cea.fr
authors: David
authors: D
authors: Cooper
authors: Robert
authors: R
authors: Truche
authors: Jean-Luc
authors: JL
authors: Rouviere