title: Determination of the inelastic mean-free-path and mean inner potential for AlAs and GaAs using off-axis electron holography and convergent beam electron diffraction.
abstract: The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 +/- 4 nm and 67 +/- 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 +/- 0.7 V and 14.0 +/- 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.
authors: School of Materials, Arizona State University, Tempe, AZ 85287, USA.
authors: Suk
authors: S
authors: Chung
authors: David J
authors: DJ
authors: Smith
authors: Martha R
authors: MR
authors: McCartney