title: Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation.
abstract: We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.
authors.affiliation: Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Wenisch
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: L
authors.initials: L
authors.lastname: Ebel
authors.forename: J
authors.initials: J
authors.lastname: Storz
authors.forename: K
authors.initials: K
authors.lastname: Pappert
authors.forename: M J
authors.initials: MJ
authors.lastname: Schmidt
authors.forename: C
authors.initials: C
authors.lastname: Kumpf
authors.forename: G
authors.initials: G
authors.lastname: Schmidt
authors.forename: K
authors.initials: K
authors.lastname: Brunner
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp