Microscopic investigation of the memory effect found in micropatterned nematic liquid crystal cells.
Isotropic untreated indium-tin-oxide layers can cause memory alignment of nematic liquid crystals. We have demonstrated an experimental method to characterize this effect by using a micropatterned surface. We tried to imprint a high tilt on an indium-tin-oxide substrate surface. We also investigated microscopic switching behavior of a memory-induced nematic liquid crystal cell by means of a vertical field effect.
Oo
Thet Naing
TN
Department of Electrical Engineering, Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan. tno2002@stn.nagaokaut.ac.jp
Yasu
Yuuki
Y
Kimura
Munehiro
M
Akahane
Tadashi
T