title: High-performance logic circuits constructed on single CdS nanowires.
abstract: A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal-semiconductor field-effect transistors (MESFETs) made on a single CdS nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one-dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio ( approximately 10(7)), low threshold voltage ( approximately -0.4 V), and low subthreshold swing ( approximately 60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.
authors.affiliation: School of Physics and State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, China.
authors.forename: Ren-Min
authors.initials: RM
authors.lastname: Ma
authors.forename: Lun
authors.initials: L
authors.lastname: Dai
authors.forename: Hai-Bin
authors.initials: HB
authors.lastname: Huo
authors.forename: Wan-Jin
authors.initials: WJ
authors.lastname: Xu
authors.forename: G G
authors.initials: GG
authors.lastname: Qin