Filling-factor-dependent magnetophonon resonance in graphene.
We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 --> +, 1 and -, 1 --> 0, at a magnetic field B{0} approximately 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations.
Goerbig
M O
MO
Laboratoire de Physique des Solides, Université Paris-Sud, CNRS UMR 8502, F-91405, Orsay, France.
Fuchs
J-N
JN
Kechedzhi
K
K
Fal'ko
Vladimir I
VI
D004583:Electrons; D006108:Graphite / Q000737:chemistry; D060739:Phonons; D013059:Spectrum Analysis, Raman; D014732:Vibration
D006108:Graphite