Linear scaling calculation of an n-type GaAs quantum dot.
A linear scale method for calculating electronic properties of large and complex systems is introduced within a local density approximation. The method is based on the Chebyshev polynomial expansion and the time-dependent method, which is tested on the calculation of the electronic structure of a model n-type GaAs quantum dot.
Nomura
Shintaro
S
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Japan. snomura@sakura.cc.tsukuba.ac.jp
Iitaka
Toshiaki
T
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D004563:Electrochemistry / Q000379:methods*; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D008956:Models, Chemical; D045663:Quantum Dots; D012666:Semiconductors
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium