title: Hysteretic behavior of angular dependence of exchange bias in FeNi/FeMn bilayers.
abstract: For FeNi/FeMn bilayers, the angular dependence of exchange bias shows hysteresis between clockwise and counterclockwise rotations, as a new signature. The hysteresis decreases for thick antiferromagnet layers. Calculations have clearly shown that the orientation of antiferromagnet spins also exhibits hysteresis between clockwise and counterclockwise rotations. This furnishes an interpretation of the macroscopic behavior of the ferromagnetic layer in terms of the thermally driven evolution of the magnetic state of the antiferromagnet layer.
authors.affiliation: The State Key Lab for Advanced Photonic Materials Devices, Fudan University, Shanghai 200433, China.
authors.forename: T R
authors.initials: TR
authors.lastname: Gao
authors.forename: D Z
authors.initials: DZ
authors.lastname: Yang
authors.forename: S M
authors.initials: SM
authors.lastname: Zhou
authors.forename: R
authors.initials: R
authors.lastname: Chantrell
authors.forename: P
authors.initials: P
authors.lastname: Asselin
authors.forename: J
authors.initials: J
authors.lastname: Du
authors.forename: X S
authors.initials: XS
authors.lastname: Wu