Hall resistivity of granular metals.
We calculate the Hall conductivity sigma(xy) and resistivity rho(xy) of a granular system at large tunneling conductance g(T)>>1. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula rho(xy)=H/(n*ec), where n* differs from the carrier density n inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature T correction to rho(xy) in the range Gamma less or similar T less or similar min(g(T)E(c), E(Th)), where Gamma is the tunneling escape rate, E(c) is the charging energy, and E(Th) is the Thouless energy of the grain.
Kharitonov
Maxim Yu
MY
Theoretische Physik III, Ruhr-Universität Bochum, Germany.
Efetov
Konstantin B
KB