Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.
We report the observation of tunneling anisotropic magnetoresistance effect in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed twofold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
Moser
J
J
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany.
Matos-Abiague
A
A
Schuh
D
D
Wegscheider
W
W
Fabian
J
J
Weiss
D
D