title: Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections.
abstract: Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.
authors.forename: Kenji
authors.initials: K
authors.lastname: Tsuda
authors.forename: Hajime
authors.initials: H
authors.lastname: Mitsuishi
authors.forename: Masami
authors.initials: M
authors.lastname: Terauchi
authors.forename: Kazuo
authors.initials: K
authors.lastname: Kawamura