title: Edge-view photodetector for optical interconnects.
abstract: A new semiconductor photodetector design is reported. The PIN active area of the photodetector is fabricated on a sloping sidewall of a mesa structure. The photodetector is referred to as an edge-view photodetector (EVPD) and simplifies the integration of optical circuits by direct end coupling, eliminating the need for 45 degrees mirrors. The EVPD geometry can reduce the cost of optical interconnects by simplifying the fabrication process and making possible automatic alignment between photodetectors and waveguides or optical fibers. The EVPD fabrication process and initial measurement results are presented. The main processing steps include deep anisotropic chemical etching, material growth, and lithography on a 3-D surface.
authors.affiliation: Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lzhandzy@163.com
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Li
authors.forename: Huajun
authors.initials: H
authors.lastname: Shen
authors.forename: Chengyue
authors.initials: C
authors.lastname: Yang
authors.forename: Baoxia
authors.initials: B
authors.lastname: Li
authors.forename: Lixi
authors.initials: L
authors.lastname: Wan
authors.forename: Daniel
authors.initials: D
authors.lastname: Guidotti