title: Hall resistivity of granular metals.
abstract: We calculate the Hall conductivity sigma(xy) and resistivity rho(xy) of a granular system at large tunneling conductance g(T)>>1. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula rho(xy)=H/(n*ec), where n* differs from the carrier density n inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature T correction to rho(xy) in the range Gamma less or similar T less or similar min(g(T)E(c), E(Th)), where Gamma is the tunneling escape rate, E(c) is the charging energy, and E(Th) is the Thouless energy of the grain.
authors.affiliation: Theoretische Physik III, Ruhr-Universität Bochum, Germany.
authors.forename: Maxim Yu
authors.initials: MY
authors.lastname: Kharitonov
authors.forename: Konstantin B
authors.initials: KB
authors.lastname: Efetov