title: Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.
abstract: We report the observation of tunneling anisotropic magnetoresistance effect in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed twofold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Moser
authors.forename: A
authors.initials: A
authors.lastname: Matos-Abiague
authors.forename: D
authors.initials: D
authors.lastname: Schuh
authors.forename: W
authors.initials: W
authors.lastname: Wegscheider
authors.forename: J
authors.initials: J
authors.lastname: Fabian
authors.forename: D
authors.initials: D
authors.lastname: Weiss