Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays.
We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synthesis enables flexible fabrication of highly ordered nanowire arrays in situ with no postgrowth dispersion. Mechanical resonance of free-standing nanowires are measured, with quality factors (Q) ranging from 400 to 1000. We obtained a Young's modulus (E) of approximately 338 GPa from an array of NWs with varying diameters and lengths. The measurement allows detection of nanowire motion with a rotating frame and reveals dual fundamental resonant modes in two orthogonal planes. A universal ratio between the resonant frequencies of these two fundamental modes, irrespective of their dimensions, is observed and attributed to an isosceles cross section of GaN NWs.
Henry
Tania
T
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA.
Kim
Kyungkon
K
Ren
Zaiyuan
Z
Yerino
Christopher
C
Han
Jung
J
Tang
Hong X
HX
D002384:Catalysis; D004563:Electrochemistry / Q000379:methods; D005708:Gallium / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D015233:Models, Statistical; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
C473348:gallium nitride; D005708:Gallium