Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film.
In this study, the Ba(Zr0.1Ti0.9)O3 (BZ1T9) thin films have been well deposited on the Pt/Ti/SiO2/Si substrate. The optimum radio frequency (RF) deposition parameters are developed, and the BZ1T9 thin films deposition at the optimum parameters have the maximum capacitance and dielectric constant of 4.4 nF and 190. As the applied voltage is increased to 8 V, the remnant polarization and coercive field of BZ1T9 thin films are about 4.5 microC/cm2 and 80 kV/cm. The counterclockwise current hysteresis and memory window of n-channel thin-film transistor property are observed, and that can be used to indicate the switching of ferroelectric polarization of BZ1T9 thin films. One-transistor-capacitor (1TC) structure of BZ1T9 ferroelectric random access memory device using bottom-gate amorphous silicon thin-film transistor was desirable because of the smaller size and better sensitivity. The BZ1T9 ferroelectric RAM devices with channel width = 40 microm and channel length = 8 microm has been successfully fabricated and the ID-VG transfer characteristics also are investigated in this study.
Yang
Cheng-Fu
CF
The authors are with the National University of Kaohsiung, Department of Chemical and Materials Engineering, Koahsiung, Taiwan. u8613319@yahoo.com.tw
Chen
Kai-Huang
KH
Chen
Ying-Chung
YC
Chang
Ting-Chang
TC
D017609:Barium Compounds / Q000737:chemistry*; D016248:Computer Storage Devices; D025802:Electric Capacitance; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry*; D014173:Transistors, Electronic; D014835:Volatilization
D017609:Barium Compounds; D008567:Membranes, Artificial