Porous silicon as a neural electrode material.
The electrical properties of the solid state/fluid (Ringer solution) interface for phosphorous- and boron-doped porous silicon are reported and the benefits of using porous silicon as neural recording electrodes are discussed. The impedance, reactance and resistance for doped porous and planar silicon, in Ringer solution, were compared to gold electrodes. Planar silicon displayed approximately a three times higher reactance than porous electrodes. The phosphorous-doped porous electrodes displayed a similar reactance compared to the gold electrodes.
Persson
Jörgen
J
Department of Electrical Measurements, Lund University, Lund Institute of Technology, P.O. Box 118, SE-22184 Lund, Sweden.
Danielsen
Nils
N
Wallman
Lars
L
D000818:Animals; D001698:Biomedical Engineering / Q000379:methods*; D001895:Boron / Q000737:chemistry*; D017097:Electric Impedance; D004566:Electrodes; D004567:Electrodes, Implanted; D004867:Equipment Design; D006046:Gold; D006801:Humans; D007477:Ions; D008670:Metals / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D009474:Neurons / Q000378:metabolism; D010758:Phosphorus / Q000737:chemistry*; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D014466:Ultraviolet Rays
D007477:Ions; D008670:Metals; D010758:Phosphorus; D006046:Gold; D001895:Boron; D012825:Silicon