title: Porous silicon as a neural electrode material.
abstract: The electrical properties of the solid state/fluid (Ringer solution) interface for phosphorous- and boron-doped porous silicon are reported and the benefits of using porous silicon as neural recording electrodes are discussed. The impedance, reactance and resistance for doped porous and planar silicon, in Ringer solution, were compared to gold electrodes. Planar silicon displayed approximately a three times higher reactance than porous electrodes. The phosphorous-doped porous electrodes displayed a similar reactance compared to the gold electrodes.
authors.affiliation: Department of Electrical Measurements, Lund University, Lund Institute of Technology, P.O. Box 118, SE-22184 Lund, Sweden.
authors.forename: Jörgen
authors.initials: J
authors.lastname: Persson
authors.forename: Nils
authors.initials: N
authors.lastname: Danielsen
authors.forename: Lars
authors.initials: L
authors.lastname: Wallman
mesh_terms: D000818:Animals; D001698:Biomedical Engineering / Q000379:methods*; D001895:Boron / Q000737:chemistry*; D017097:Electric Impedance; D004566:Electrodes; D004567:Electrodes, Implanted; D004867:Equipment Design; D006046:Gold; D006801:Humans; D007477:Ions; D008670:Metals / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D009474:Neurons / Q000378:metabolism; D010758:Phosphorus / Q000737:chemistry*; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D014466:Ultraviolet Rays
chemical_list: D007477:Ions; D008670:Metals; D010758:Phosphorus; D006046:Gold; D001895:Boron; D012825:Silicon