Electronic transport properties of individual chemically reduced graphene oxide sheets.
Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.
Gómez-Navarro
Cristina
C
Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany.
Weitz
R Thomas
RT
Bittner
Alexander M
AM
Scolari
Matteo
M
Mews
Alf
A
Burghard
Marko
M
Kern
Klaus
K
D003460:Crystallization; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods; D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D053758:Nanoparticles / Q000737:chemistry; D049329:Nanostructures; D036103:Nanotechnology / Q000379:methods*; D010087:Oxides / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D013059:Spectrum Analysis, Raman; D013499:Surface Properties; D013696:Temperature
D010087:Oxides; D012822:Silicon Dioxide; D006108:Graphite