Transparent thin-film characterization by using differential optical sectioning interference microscopy.
We propose an optical thin-film characterization technique, differential optical sectioning interference microscopy (DOSIM), for simultaneously measuring the refractive indices and thicknesses of transparent thin films with submicrometer lateral resolution. DOSIM obtains the depth and optical phase information of a thin film by using a dual-scan concept in differential optical sectioning microscopy combined with the Fabry-Perot interferometric effect and allows the solution of refractive index and thickness without the 2pi phase-wrapping ambiguity. Because DOSIM uses a microscope objective as the probe, its lateral resolution achieves the diffraction limit. As a demonstration, we measure the refractive indices and thicknesses of SiO2 thin films grown on Si substrate and indium-tin-oxide thin films grown on a glass substrate. We also compare the measurement results of DOSIM with those of a conventional ellipsometer and an atomic force microscope.
Wang
Chun-Chieh
CC
Graduate Institute of Physics, National Chung Cheng University, Chia-Yi, Taiwan.
Lin
Jiunn-Yuan
JY
Jian
Hung-Jhang
HJ
Lee
Chau-Hwang
CH
D002138:Calibration; D004867:Equipment Design; D007204:Indium / Q000737:chemistry; D007368:Interferometry / Q000379:methods; D008853:Microscopy / Q000379:methods; D018625:Microscopy, Atomic Force; D018613:Microscopy, Confocal; D008857:Microscopy, Interference / Q000379:methods*; D015233:Models, Statistical; D055095:Optics and Photonics; D012031:Refractometry; D012044:Regression Analysis; D012825:Silicon / Q000737:chemistry; D017971:Tin Compounds / Q000737:chemistry
D017971:Tin Compounds; D007204:Indium; C045358:stannic oxide; D012825:Silicon