title: Electronic transport properties of individual chemically reduced graphene oxide sheets.
abstract: Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.
authors.affiliation: Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany.
authors.forename: Cristina
authors.initials: C
authors.lastname: Gómez-Navarro
authors.forename: R Thomas
authors.initials: RT
authors.lastname: Weitz
authors.forename: Alexander M
authors.initials: AM
authors.lastname: Bittner
authors.forename: Matteo
authors.initials: M
authors.lastname: Scolari
authors.forename: Alf
authors.initials: A
authors.lastname: Mews
authors.forename: Marko
authors.initials: M
authors.lastname: Burghard
authors.forename: Klaus
authors.initials: K
authors.lastname: Kern
mesh_terms: D003460:Crystallization; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods; D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D053758:Nanoparticles / Q000737:chemistry; D049329:Nanostructures; D036103:Nanotechnology / Q000379:methods*; D010087:Oxides / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D013059:Spectrum Analysis, Raman; D013499:Surface Properties; D013696:Temperature
chemical_list: D010087:Oxides; D012822:Silicon Dioxide; D006108:Graphite