Design and evaluation of a 2D array PIN photodiode bump bonded to readout IC for the low energy x-ray detector.
A 2D array radiation sensor, consisting of an array of PIN photodiodes bump bonded to readout integrated circuit (IC), has been developed for operation with low energy X-rays. The PIN photodiode array and readout IC for this system have been fabricated. The main performance measurements are the following: a few pA-scale leakage current, 350 pF junction capacitance, 30 microm-depth depletion layer and a 250 microm intrinsic layer at zero bias. This PIN photodiode array and readout IC were fabricated using a PIN photodiode process and standard 0.35 microm CMOS technology, respectively. The readout circuit is operated from a 3.3 V single power supply. Finally, a 2D array radiation sensor has been developed using bump bonding between the PIN photodiode and the readout electronics.
Yuk
Sunwoo
S
Dept. of Electron. & Inf. Eng., Korea Univ., Seoul, 136-705, South Korea. sunwoo@korea.ac.kr
Park
Shin-Woong
SW
Yi
Yun
Y
D004867:Equipment Design; D019544:Equipment Failure Analysis; D011829:Radiation Dosage; D011856:Radiographic Image Enhancement / Q000295:instrumentation* / Q000379:methods; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D014159:Transducers; D014963:X-Ray Intensifying Screens