Biexciton gain and the Mott transition in GaAs quantum wires.
Optical gain and the Mott transition in GaAs quantum wires were studied via simultaneous measurements of absorption and photoluminescence (PL). We observed well-separated PL peaks assigned to excitons (X) and biexcitons (XX) even at densities where optical gain existed. A sharp optical gain first appeared when the XX peak overtook the X peak, indicating the gain origin of biexciton-exciton population inversion. The XX peak eventually changed to a broad peak of plasma, and a broad gain due to plasma was observed as the Mott transition was completed.
Hayamizu
Yuhei
Y
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan.
Yoshita
Masahiro
M
Takahashi
Yasushi
Y
Akiyama
Hidefumi
H
Ning
C Z
CZ
Pfeiffer
Loren N
LN
West
Ken W
KW