Atomic dipole moment distribution of Si atoms on a Si111-(7 x 7) surface studied using noncontact scanning nonlinear dielectric microscopy.
A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7 x 7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7 x 7) surface is measured. At the weak applied voltage of -0.5 V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.
Cho
Yasuo
Y
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Sendai 980-8577, Japan. cho@riec.tohoku.ac.jp
Hirose
Ryusuke
R