One-dimensional bromo-bridged Ni III complexes [Ni(S,S-bn)2Br]Br2 (S,S-bn=2S,3S-diaminobutane): synthesis, physical properties, and electrostatic carrier doping.
A new bromo-bridged Ni III compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on Ni III species (J=(2350+/-500) K) that result from the strong covalency of the Ni--Br bond and the spin-Peierls transition below 150 K. This was shown by the results of magnetic susceptibility and 81Br nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field-effect transistor device. This compound also showed n-type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of Ni II impurities.
Takaishi
Shinya
S
Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8578, Japan. takaishi@agnus.chem.tohoku.ac.jp
Yamashita
Masahiro
M
Matsuzaki
Hiroyuki
H
Okamoto
Hiroshi
H
Tanaka
Hisaaki
H
Kuroda
Shin-ichi
S
Goto
Atsushi
A
Shimizu
Tadashi
T
Takenobu
Taishi
T
Iwasa
Yoshihiro
Y
D001965:Bromides / Q000737:chemistry*; D055598:Chemical Phenomena; D002627:Chemistry, Physical; D018360:Crystallography, X-Ray; D008958:Models, Molecular; D015394:Molecular Structure; D009532:Nickel / Q000737:chemistry*; D009942:Organometallic Compounds / Q000138:chemical synthesis* / Q000737:chemistry*; D011700:Putrescine / Q000737:chemistry*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry; D055672:Static Electricity; D013499:Surface Properties; D013696:Temperature; D014173:Transistors, Electronic
D001965:Bromides; D009942:Organometallic Compounds; D012822:Silicon Dioxide; D009532:Nickel; D011700:Putrescine