Coherent spin transport through a 350 micron thick silicon wafer.
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.
Huang
Biqin
B
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware, 19716, USA. bqhuang@udel.edu
Monsma
Douwe J
DJ
Appelbaum
Ian
I