C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe.
The C-V electrical characterization of microstructures on a standard probe station is limited by the magnification of the imaging system and the precision of the probe manipulators. To overcome these limitations, we examine the combination of in situ electrical probing and a dual column scanning electron microscope/focused ion beam system. The imaging parameters and probing procedures are carefully chosen to reduce e-beam damage to the metal oxide semiconductor capacitor device under test. Estimation of shunt capacitance is critical when making femtofarad level measurements. C-V measurements of micron size metal-oxide-silicon capacitors are demonstrated.
Zheng
T
T
Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75083, USA.
Jia
H
H
Wallace
R M
RM
Gnade
B E
BE
D025802:Electric Capacitance; D017097:Electric Impedance; D004581:Electronics; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000295:instrumentation* / Q000379:methods; D008670:Metals / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning / Q000295:instrumentation* / Q000379:methods; D020527:Microscopy, Scanning Probe / Q000295:instrumentation* / Q000379:methods; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010087:Oxides / Q000737:chemistry; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers
D008670:Metals; D010087:Oxides