CMOS-micromachined, two-dimenisional transistor arrays for neural recording and stimulation.
In-plane microelectrode arrays have proven to be useful tools for studying the connectivities and the functions of neural tissues. However, seldom microelectrode arrays are monolithically-integrated with signal-processing circuits, without which the maximum number of electrodes is limited by the compromise with routing complexity and interferences. This paper proposes a CMOS-compatible, two-dimensional array of oxide-semiconductor field-effect transistors(OSFETs), capable of both recording and stimulating neuronal activities. The fabrication of the OSFETs not only requires simply die-level, post-CMOS micromachining process, but also retains metal layers for monolithic integration with signal-processing circuits. A CMOS microsystem containing the OSFET arrays and gain-programmable recording circuits has been fabricated and tested. The preliminary testing results are presented and discussed.
Lin
J S
JS
Inst. of Electronics Engineering, the NTHU, No. 101, Sec. 2, Kuang-Fu Rd., Hsin-Chu, Taiwan 30013.
Chang
S R
SR
Chang
C H
CH
Lu
S C
SC
Chen
H
H
D000465:Algorithms; D000669:Amplifiers, Electronic; D004567:Electrodes, Implanted; D004867:Equipment Design; D006801:Humans; D007495:Iridium / Q000737:chemistry; D008422:Materials Testing; D008838:Microcomputers; D008839:Microelectrodes; D008962:Models, Theoretical; D009420:Nervous System / Q000473:pathology*; D009474:Neurons / Q000473:pathology; D010984:Platinum / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D014173:Transistors, Electronic
D007495:Iridium; D010984:Platinum; D012825:Silicon