title: Controlled nanoscale doping of semiconductors via molecular monolayers.
abstract: One of the major challenges towards scaling electronic devices to the nanometre-size regime is attaining controlled doping of semiconductor materials with atomic accuracy, as at such small scales, the various existing technologies suffer from a number of setbacks. Here, we present a novel strategy for controlled, nanoscale doping of semiconductor materials by taking advantage of the crystalline nature of silicon and its rich, self-limiting surface reaction properties. Our method relies on the formation of a highly uniform and covalently bonded monolayer of dopant-containing molecules, which enables deterministic positioning of dopant atoms on the Si surfaces. In a subsequent annealing step, the dopant atoms are diffused into the Si lattice to attain the desired doping profile. We show the versatility of our approach through controlled p- and n-doping of a wide range of semiconductor materials, including ultrathin silicon-on-insulator substrates and nanowires, which are then configured into novel transistor structures.
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.forename: Roie
authors.initials: R
authors.lastname: Yerushalmi
authors.forename: Zachery A
authors.initials: ZA
authors.lastname: Jacobson
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.forename: Robert L
authors.initials: RL
authors.lastname: Alley
authors.forename: Ali
authors.initials: A
authors.lastname: Javey