title: Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver.
abstract: We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor's heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya
authors.forename: Jian
authors.initials: J
authors.lastname: Xu
authors.forename: Gyorgy
authors.initials: G
authors.lastname: Váró
authors.forename: Duane L
authors.initials: DL
authors.lastname: Marcy
authors.forename: Robert R
authors.initials: RR
authors.lastname: Birge