title: Method of measuring the spatial resolution of a photoresist.
abstract: By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination.
authors.forename: J A
authors.initials: JA
authors.lastname: Hoffnagle
authors.forename: W D
authors.initials: WD
authors.lastname: Hinsberg
authors.forename: M I
authors.initials: MI
authors.lastname: Sanchez
authors.forename: F A
authors.initials: FA
authors.lastname: Houle