title: Photorefractive multiple quantum wells at 1064 nm.
abstract: We have fabricated photorefractive InGaAs/GaAs multiple quantum wells that are sensitive at wavelengths near 1.06 mum for what is believed to be the first time. We have measured four-wave-mixing diffraction efficiency, using a Nd:YAG laser. A maximum diffraction efficiency of 7 x 10(-4) and a cutoff grating period of ~2 mum are obtained.
authors.forename: S
authors.initials: S
authors.lastname: Iwamoto
authors.forename: S
authors.initials: S
authors.lastname: Taketomi
authors.forename: H
authors.initials: H
authors.lastname: Kageshima
authors.forename: M
authors.initials: M
authors.lastname: Nishioka
authors.forename: T
authors.initials: T
authors.lastname: Someya
authors.forename: Y
authors.initials: Y
authors.lastname: Arakawa
authors.forename: K
authors.initials: K
authors.lastname: Fukutani
authors.forename: T
authors.initials: T
authors.lastname: Shimura
authors.forename: K
authors.initials: K
authors.lastname: Kuroda