title: Difference frequency generation of 8-microm radiation in orientation- patterned GaAs.
abstract: First-order quasi-phase-matched difference frequency generation of narrowband tunable mid-infrared light is demonstrated in orientation-patterned GaAs. The all-epitaxial orientation-patterned crystal is fabricated by a combination of molecular beam epitaxy and hydride vapor phase epitaxy. Lasers at 1.3 and 1.55 microm were mixed to give an idler output at 8 microm, with power and wavelength tuning consistent with theoretical estimates, indicating excellent material uniformity over the 19-mm-long and 500-microm-thick device.
authors.forename: O
authors.initials: O
authors.lastname: Levi
authors.forename: T J
authors.initials: TJ
authors.lastname: Pinguet
authors.forename: T
authors.initials: T
authors.lastname: Skauli
authors.forename: L A
authors.initials: LA
authors.lastname: Eyres
authors.forename: K R
authors.initials: KR
authors.lastname: Parameswaran
authors.forename: J S
authors.initials: JS
authors.lastname: Harris
authors.forename: M M
authors.initials: MM
authors.lastname: Fejer
authors.forename: T J
authors.initials: TJ
authors.lastname: Kulp
authors.forename: S E
authors.initials: SE
authors.lastname: Bisson
authors.forename: B
authors.initials: B
authors.lastname: Gerard
authors.forename: E
authors.initials: E
authors.lastname: Lallier
authors.forename: L
authors.initials: L
authors.lastname: Becouarn