title: Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers.
abstract: An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si(0.7)Ge(0.3) device is capable of room-temperature operation and has a response time of less than 300 ps.
authors.forename: Alison Y
authors.initials: AY
authors.lastname: Loudon
authors.forename: Philip A
authors.initials: PA
authors.lastname: Hiskett
authors.forename: Gerald S
authors.initials: GS
authors.lastname: Buller
authors.forename: Roger T
authors.initials: RT
authors.lastname: Carline
authors.forename: Dave C
authors.initials: DC
authors.lastname: Herbert
authors.forename: W Y
authors.initials: WY
authors.lastname: Leong
authors.forename: John G
authors.initials: JG
authors.lastname: Rarity