title: A chemically amplified fullerene-derivative molecular electron-beam resist.
abstract: Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
authors.affiliation: Nanoscale Physics Research Laboratory, School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham B15 2TT, UK.
authors.forename: Francis
authors.initials: F
authors.lastname: Gibbons
authors.forename: Hasnah M
authors.initials: HM
authors.lastname: Zaid
authors.forename: Mayandithevar
authors.initials: M
authors.lastname: Manickam
authors.forename: Jon A
authors.initials: JA
authors.lastname: Preece
authors.forename: Richard E
authors.initials: RE
authors.lastname: Palmer
authors.forename: Alex P G
authors.initials: AP
authors.lastname: Robinson
mesh_terms: D003432:Cross-Linking Reagents / Q000737:chemistry; D004583:Electrons; D037741:Fullerenes / Q000737:chemistry*
chemical_list: D003432:Cross-Linking Reagents; D037741:Fullerenes