title: Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks.
abstract: We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.
authors.forename: W
authors.initials: W
authors.lastname: Fang
authors.forename: J Y
authors.initials: JY
authors.lastname: Xu
authors.forename: A
authors.initials: A
authors.lastname: Yamilov
authors.forename: H
authors.initials: H
authors.lastname: Cao
authors.forename: Y
authors.initials: Y
authors.lastname: Ma
authors.forename: S T
authors.initials: ST
authors.lastname: Ho
authors.forename: G S
authors.initials: GS
authors.lastname: Solomon