title: Graphene nanostrip digital memory device.
abstract: In equilibrium, graphene nanostrips, with hydrogens sp2-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.
authors.affiliation: Naval Research Laboratory, Washington, DC 20375, USA. daniel.gunlycke@nrl.navy.mil
authors.forename: Daniel
authors.initials: D
authors.lastname: Gunlycke
authors.forename: Denis A
authors.initials: DA
authors.lastname: Areshkin
authors.forename: Junwen
authors.initials: J
authors.lastname: Li
authors.forename: John W
authors.initials: JW
authors.lastname: Mintmire
authors.forename: Carter T
authors.initials: CT
authors.lastname: White
mesh_terms: D003198:Computer Simulation; D004563:Electrochemistry; D006108:Graphite / Q000737:chemistry*; D006860:Hydrogen Bonding; D008954:Models, Biological; D008956:Models, Chemical; D008958:Models, Molecular; D036103:Nanotechnology; D037742:Nanotubes, Carbon / Q000737:chemistry*; D012996:Solutions
chemical_list: D037742:Nanotubes, Carbon; D012996:Solutions; D006108:Graphite