title: Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation.
abstract: Quasi-phase-matched (QPM) GaAs structures, 0.5 mm thick, 10 mm long, and with 61-mum grating periods, were grown by a combination of molecular-beam epitaxy and hydride vapor phase epitaxy. These were characterized by use of mid-IR second-harmonic generation (SHG) with a ZnGeP(2) (ZGP) optical parametric oscillator as a pump source. The SHG efficiencies of QPM GaAs and QPM LiNbO(3) were directly compared, and a ratio of nonlinear coefficients d(14)(GaAs)/d(33) (LiNbO(3))=5.01+/-0.3 was found at 4.1-mum fundamental wavelength. For input pulse energies as low as 50muJ and approximately 60-ns pulse duration, an internal SHG conversion efficiency of 33% was measured in QPM GaAs.
authors.forename: T
authors.initials: T
authors.lastname: Skauli
authors.forename: K L
authors.initials: KL
authors.lastname: Vodopyanov
authors.forename: T J
authors.initials: TJ
authors.lastname: Pinguet
authors.forename: A
authors.initials: A
authors.lastname: Schober
authors.forename: O
authors.initials: O
authors.lastname: Levi
authors.forename: L A
authors.initials: LA
authors.lastname: Eyres
authors.forename: M M
authors.initials: MM
authors.lastname: Fejer
authors.forename: J S
authors.initials: JS
authors.lastname: Harris
authors.forename: B
authors.initials: B
authors.lastname: Gerard
authors.forename: L
authors.initials: L
authors.lastname: Becouarn
authors.forename: E
authors.initials: E
authors.lastname: Lallier
authors.forename: G
authors.initials: G
authors.lastname: Arisholm