Two-photon-induced laser annealing for enhancement of photoluminescence intensity in ZnSe crystal.
We present the finding that photoluminescence intensity in ZnSe crystal is enhanced after exposure to a femtosecond laser beam. After the crystal was illuminated with laser light of 1.04 MW/cm(2) during 300 s, photoluminescence intensity was increased approximately 20%. The region in which photoluminescence intensity was enhanced was localized in the optical axis, because this phenomenon occurred in the two-photon excitation process. It is possible to achieve three-dimensional control of photoluminescence intensity by illumination with laser light.
Torizawa
Makoto
M
Department of Mechanical Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan. torizawa@optsci.eng.shizuoka.ac.jp
Kawata
Yoshimasa
Y