A chemically amplified fullerene-derivative molecular electron-beam resist.
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
Gibbons
Francis
F
Nanoscale Physics Research Laboratory, School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham B15 2TT, UK.
Zaid
Hasnah M
HM
Manickam
Mayandithevar
M
Preece
Jon A
JA
Palmer
Richard E
RE
Robinson
Alex P G
AP
D003432:Cross-Linking Reagents / Q000737:chemistry; D004583:Electrons; D037741:Fullerenes / Q000737:chemistry*
D003432:Cross-Linking Reagents; D037741:Fullerenes