title: The catalyst-assisted synthesis of high quality CdS single-crystal nanowires through an epitaxy mechanism.
abstract: High quality wurtzite CdS nanowires have been synthesized by thermal evaporation of CdS powder onto Si substrate in the presence of Au catalyst at 650 degrees C by using pure H2 as a carrier gas. The nanowires were 10 nm in diameter and a few tens of micrometers in length. XRD patterns demonstrated that as prepared CdS is a pure crystalline material. High-resolution transmission electron microscopy of the materials showed that all CdS nanowires grew along (0001). According to analysis of selective area electron diffraction patterns taken from the interface, we proposed that there is a kind of epitaxy relationship in the interface region between Au catalyst and CdS grown, i.e., (0001)CdS // (111)Au, and [1210]CdS // [011]Au.
authors.affiliation: State Key Laboratory for Physical Chemistry of Solid Surface, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, PR China.
authors.forename: Zengtao
authors.initials: Z
authors.lastname: Liu
authors.forename: Chen
authors.initials: C
authors.lastname: Li
authors.forename: Yanpeng
authors.initials: Y
authors.lastname: Fu
authors.forename: Yong
authors.initials: Y
authors.lastname: Yang
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry*; D002384:Catalysis; D003460:Crystallization; D004583:Electrons; D053768:Metal Nanoparticles / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008956:Models, Chemical; D053758:Nanoparticles / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry; D044367:Phase Transition; D012825:Silicon / Q000737:chemistry; D013056:Spectrophotometry, Ultraviolet; D013440:Sulfides / Q000737:chemistry*; D013696:Temperature; D014961:X-Ray Diffraction
chemical_list: D019187:Cadmium Compounds; D013440:Sulfides; C034939:cadmium sulfide; D012825:Silicon