Work function increase of Al-doped ZnO thin films by B+ ion implantation.
The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 x 10(16) cm(-2) and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.
Hong
Sang-Jin
SJ
Department of Advanced Materials Engineering, Chosun University, Gwangju 501-759, Korea.
Heo
Gi-Seok
GS
Park
Jong-Woon
JW
Lee
In-Hwan
IH
Choi
Bum-Ho
BH
Lee
Jong-Ho
JH
Park
Se-Yeon
SY
Shin
Dong-Chan
DC
D000535:Aluminum / Q000737:chemistry* / Q000528:radiation effects; D003460:Crystallization / Q000379:methods; D004307:Dose-Response Relationship, Radiation; D004553:Electric Conductivity; D020450:Heavy Ions; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D011829:Radiation Dosage; D013499:Surface Properties / Q000528:radiation effects; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
D008567:Membranes, Artificial; D000535:Aluminum; D015034:Zinc Oxide