Fabrication and characterization of patterned single-crystal silicon nanolines.
This letter demonstrates a method for fabricating single-crystal Si nanolines, with rectangular cross sections and nearly atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture measured by nanoindentation tests exceeding 8.5% for lines of 74 nm width. A large displacement burst before fracture was observed, which is attributed to a buckling mechanism. Numerical simulations show that the critical load for buckling depends on the friction at the contact surface.
Microelectronics Research Center, University of Texas, Austin, Texas 78758, USA. libin@mail.utexas.edu
Bin
B
Li
Min K
MK
Kang
Kuan
K
Lu
Rui
R
Huang
Paul S
PS
Ho
Richard A
RA
Allen
Michael W
MW
Cresswell