High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction.
High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p+-n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm.
Laboratoire de Microscopies et d'Etude de Nanostructures, EA 3799, Université de Reims, 21 Rue Clément Ader, 51685 Reims Cedex 2, France.
K
K
Smaali
J
J
Fauré
A
A
El Hdiy
M
M
Troyon