Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.
The electrode dependent resistance switching behaviors of amorphous HfO2 films grown by atomic layer deposition were systematically investigated. The low and high resistance states were successfully achieved for all the metal-insulator-metal resistor systems with Mo, Ru, and Pt symmetric electrodes. The characteristic reset and set voltages as well as the dynamic resistance ratio of the resistor device are strongly dependent on the electrode material with different work function. In addition, the different features for switching voltages with electrode are shown with annealing temperature.
Information Display Research Institute, Hanyang University, Seoul 133-791, Korea.
In-Sung
IS
Park
Joo-Ho
JH
Lee
Sunwoo
S
Lee
Jinho
J
Ahn
D016248:Computer Storage Devices; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006195:Hafnium / Q000737:chemistry*; D008567:Membranes, Artificial; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
D008567:Membranes, Artificial; D006195:Hafnium