Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon.
In this paper, we present our numerical study on FinFET having an isolated n+/p+ gate region strapped with metal and poly-silicon structure. Our theoretical work is based on 2-D quantum-mechanical simulator with a self-consistent solution of Poisson-Schrödinger equation. Our numerical simulation revealed that the threshold voltage (VT) is controlled within -0.1 approximately +0.2 V with varying the doping concentration of the n+ and p+ polysilicon gate region from 1.0 x 10(17) to 1.0 x 10(18) cm(-3). We also confirmed that the better VT tolerance of the FinFET on the variation of the fin thickness can be expected over the conventional FinFET structure. For instance, the VT of the FinFET under this work exhibited 0.02 V tolerance with respect to the variation of the fin thickness change of 5 nm (from 30 to 35 nm) while the traditional FinFET demonstrates the tolerance of 0.12 V for the same variation of the fin thickness.
Department of Electrical Engineering, Inha University, 253 Yonghyun-dong, Nam-ku, Incheon 402-751, Korea.
Han-Geon
HG
Kim
Joong-Sik
JS
Kim
Young-Kyu
YK
Kim
Taeyoung
T
Won
D003198:Computer Simulation; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D011381:Programming Languages; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*; D012984:Software; D014173:Transistors, Electronic
D012825:Silicon