Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
Ahnsook
A
Yoon
Woong-Ki
WK
Hong
Takhee
T
Lee
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D011108:Polymers / Q000737:chemistry; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D011108:Polymers; D015034:Zinc Oxide