High-quality lowest-loss-mode lasing in GaAs quasi-stadium laser diodes having unstable resonators.
We obtained high-quality lowest-loss-mode lasing in quasi-stadium laser diodes having unstable resonators that consisted of two curved end mirrors and two straight sidewall mirrors. The laser diodes were fabricated by applying a reactive ion etching technique to a metal-organic chemical-vapor deposition-grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The electrode contact area of the laser diodes was formed along unstable periodic orbits, along which the optical beams are localized. Highly directional fan-out beams corresponding to the numerically obtained lowest loss mode were emitted from the end mirrors under CW operation at room temperature.
Department of Communication Engineering, Faculty of Computer Science and System Engineering, Okayama Prefectural University, Japan. fuku@oka-pu.ac.jp
Takehiro
T
Fukushima
Tomoko
T
Tanaka
Takahisa
T
Harayama