Fabrication of poly-silicon nano-wire transistors on plastic substrates.
We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150 degrees with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.
Park
ChangMin
C
School of Electrical Engineering, Korea University, 5-1 Anam, Sungbuk, Seoul 136-701, Korea.
Lee
SeHan
S
Choi
MinSu
M
Kang
MyungGil
M
Jung
YoungChai
Y
Hwang
SungWoo
S
Ahn
Doyeol
D
Lee
JungHyeon
J
Song
ChangRyong
C
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007094:Imides / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D010969:Plastics / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
D007094:Imides; D010969:Plastics; D012825:Silicon