Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.
InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.
Kang
Eun-Sil
ES
School of Advanced Materials Engineering and Research, Center for Advanced Materials Development, Chonbuk National University, Chonju 561-756, Korea.
Ju
Jin-Woo
JW
Kim
Jin Soo
JS
Ahn
Haeng-Keun
HK
Lee
June Key
JK
Kim
Jin Hyeok
JH
Shin
Dong-Chan
DC
Lee
In-Hwan
IH
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation* / Q000379:methods; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D009566:Nitrates / Q000737:chemistry*; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors
D009566:Nitrates; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C089767:indium nitrate