Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.
Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.
Yun
Sun Jin
SJ
Terahertz Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea.
Lim
Jung Wook
JW
Kim
Hyun-Tak
HT
D000537:Aluminum Oxide / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D005740:Gases / Q000737:chemistry; D006358:Hot Temperature; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013499:Surface Properties; D015040:Zirconium / Q000737:chemistry*
D005740:Gases; D046911:Macromolecular Substances; D008567:Membranes, Artificial; D015040:Zirconium; D000537:Aluminum Oxide; C028541:zirconium oxide