Ga2O3 and GaN nanocrystalline film: reverse micelle assisted solvothermal synthesis and characterization.
Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.
Sinha
Godhuli
G
Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata, 700 032, India.
Ganguli
Dibyendu
D
Chaudhuri
Subhadra
S
D005708:Gallium / Q000737:chemistry*; D005898:Glass / Q000737:chemistry; D006358:Hot Temperature; D008823:Micelles; D053758:Nanoparticles / Q000737:chemistry*; D011791:Quartz; D013499:Surface Properties; D013816:Thermodynamics
D008823:Micelles; D011791:Quartz; C473348:gallium nitride; C038863:gallium oxide; D005708:Gallium