title: Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry.
abstract: In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that self-assemble in large left-handed and right-handed magnetic-like domains.
authors: CNR-ISM, via Fosso del Cavaliere, 00133 Roma, Italy. paola.depadova@ism.cnr.it
authors: Paola
authors: P
authors: De Padova
authors: Claudio
authors: C
authors: Quaresima
authors: Paolo
authors: P
authors: Perfetti
authors: Bruno
authors: B
authors: Olivieri
authors: Christel
authors: C
authors: Leandri
authors: Bernard
authors: B
authors: Aufray
authors: Sebastien
authors: S
authors: Vizzini
authors: Guy Le
authors: GL
authors: Lay