Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells.
Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91-0.94microm in the Franz-Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5x10(-4) .
Iwamoto
S
S
Kageshima
H
H
Yuasa
T
T
Nishioka
M
M
Someya
T
T
Arakawa
Y
Y
Fukutani
K
K
Shimura
T
T
Kuroda
K
K