title: Observation of optical bistability in a GaAlAs semiconductor laser under intermodal injection locking.
abstract: Experimental observation of optical bistability in a semiconductor laser under intermodal injection locking is reported for what is believed to be the first time. It is seen that a change in injection power of several microwatts or master laser frequency detuning of a few hundred megahertz can induce a change of as much as several hundred gigahertz in the lasing frequency of the slave laser. The results are in qualitative agreement with theoretical predictions.
authors: Y
authors: Y
authors: Hong
authors: K A
authors: KA
authors: Shore