Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis.
In this work, a detailed TEM sample preparation recipe based on a wedge polishing technique for GaN-based materials is presented. The obtained samples have atomically flat surfaces without any obvious surface damages such as the formation of amorphous layers. A composition estimation of Al(x)Ga(1-x)N from Z-contrast STEM imaging is carried out using these samples. The results are in good accord with the nominal composition.
Okuno
Hanako
H
National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan.
Takeguchi
Masaki
M
Mitsuishi
Kazutaka
K
Guo
Xing J
XJ
Furuya
Kazuo
K
D000535:Aluminum / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D013048:Specimen Handling
D005708:Gallium; D000535:Aluminum