title: Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors.
abstract: Crystalline Ti:sapphire (Ti:Al(2)O(3)) thin films were grown at low temperatures upon Al(2)O(3) (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti-Al alloy target and O(2) . The films were investigated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti(3+) ions in bulk samples of Al(2)O(3) .
authors: Physikalisch-Chemisches Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.
authors: P R
authors: PR
authors: Willmott
authors: P
authors: P
authors: Manoravi
authors: J R
authors: JR
authors: Huber
authors: T
authors: T
authors: Greber
authors: T A
authors: TA
authors: Murray
authors: K
authors: K
authors: Holliday