title: Crystallization of GeO(2)-SiO(2) glass by poling with ArF-laser excitation.
abstract: We report on crystallization of 15.7GeO(2) 84.3SiO(2) (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100(mJ/cm (2))/pulse , and the number of shots was 10(4) . The crystallites that were observed in the glass were approximately 15-20microm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ~0.5x10(5)V/cm , beyond which crystallization occurred.
authors: S
authors: S
authors: Matsumoto
authors: T
authors: T
authors: Fujiwara
authors: M
authors: M
authors: Ohama
authors: A J
authors: AJ
authors: Ikushima