title: Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes.
abstract: Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.
authors: F J
authors: FJ
authors: Kao
authors: M K
authors: MK
authors: Huang
authors: Y S
authors: YS
authors: Wang
authors: S L
authors: SL
authors: Huang
authors: M K
authors: MK
authors: Lee
authors: C K
authors: CK
authors: Sun