title: Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells.
abstract: Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91-0.94microm in the Franz-Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5x10(-4) .
authors: S
authors: S
authors: Iwamoto
authors: H
authors: H
authors: Kageshima
authors: T
authors: T
authors: Yuasa
authors: M
authors: M
authors: Nishioka
authors: T
authors: T
authors: Someya
authors: Y
authors: Y
authors: Arakawa
authors: K
authors: K
authors: Fukutani
authors: T
authors: T
authors: Shimura
authors: K
authors: K
authors: Kuroda