Crystallization of GeO(2)-SiO(2) glass by poling with ArF-laser excitation.
We report on crystallization of 15.7GeO(2) 84.3SiO(2) (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100(mJ/cm (2))/pulse , and the number of shots was 10(4) . The crystallites that were observed in the glass were approximately 15-20microm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ~0.5x10(5)V/cm , beyond which crystallization occurred.
Matsumoto
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S
Fujiwara
T
T
Ohama
M
M
Ikushima
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AJ