title: 16-microm infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs.
abstract: Tunable 90-ps 15.6-17.6-microm coherent radiation was generated by means of difference-frequency mixing in diffusion-bonded-stacked GaAs. The sample consisted of 24 alternately rotated layers with a total length of 6 mm and with low optical loss to achieve third-order quasi-phase matching. The wavelength-tuning curve was close to the theoretical prediction, demonstrating that the bonding process maintained nonlinear optical phase matching over the entire interaction length. Maximum conversion efficiency of 0.7%, or 5% internal quantum efficiency, was measured at 16.6 microm, consistent with the theoretical predictions.
authors: Ginzton Laboratory, Stanford University, Stanford, California 94305, USA.
authors: D
authors: D
authors: Zheng
authors: L A
authors: LA
authors: Gordon
authors: Y S
authors: YS
authors: Wu
authors: R S
authors: RS
authors: Feigelson
authors: M M
authors: MM
authors: Fejer
authors: R L
authors: RL
authors: Byer
authors: K L
authors: KL
authors: Vodopyanov