title: Analysis of the effect of an electric-field profile on the gain bandwidth product of avalanche photodetectors.
abstract: We investigate the effect of the electric-field profile on the gain-bandwidth product of avalanche photodetectors with separate absorption and multiplication. We show that for a given multiplication layer thickness the electric-field profile plays an important role in determining the gain-bandwidth product. The calculation results show that an increasing triangular electric-field profile yields a larger gain-bandwidth product than most other profiles for Si/InGaAs avalanche photodetectors.
authors.forename: W
authors.initials: W
authors.lastname: Wu
authors.forename: A R
authors.initials: AR
authors.lastname: Hawkins
authors.forename: J E
authors.initials: JE
authors.lastname: Bowers