Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001) SiO(2) interface.
Carrier-induced screening of the dc electric field at the Si(001)-SiO(2) interface is observed by intensity-dependent and femtosecond-time-resolved second-harmonic spectroscopy. The screening occurs on a time scale of ~?(p)(-1) , the reciprocal plasma frequency of the generated carriers.
Dadap
J I
JI
Wilson
P T
PT
Anderson
M H
MH
Downer
M C
MC
Ter Beek
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M