title: Ti:sapphire planar waveguide laser grown by pulsed laser deposition.
abstract: We document the lasing performance of a waveguiding layer of Ti:sapphire, of ~12-mum thickness, grown by pulsed laser deposition from a 0.12-wt.% Ti(2)O(3) Ti:sapphire single-crystal target onto an undoped z-cut sapphire substrate. Lasing around 800 nm is observed when the waveguide layer is pumped by an argon-ion laser running on all-blue-green lines, with an absorbed power threshold of 0.56 W, with high-reflectivity (R>98%) mirrors. With a 5% pump duty cycle and a T=35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-cw output powers in excess of 350 mW.
authors.forename: A A
authors.initials: AA
authors.lastname: Anderson
authors.forename: R W
authors.initials: RW
authors.lastname: Eason
authors.forename: L M
authors.initials: LM
authors.lastname: Hickey
authors.forename: M
authors.initials: M
authors.lastname: Jelinek
authors.forename: C
authors.initials: C
authors.lastname: Grivas
authors.forename: D S
authors.initials: DS
authors.lastname: Gill
authors.forename: N A
authors.initials: NA
authors.lastname: Vainos