Transient of scanning electron microscopic images for a buried microstructure in insulators.
We clarify the transient process and its mechanism of scanning electron microscope (SEM) images of a trench microstructure buried in insulators. First, interface charges of primary electrons trapped on the trench are derived from the charging model of a capacitor considering the electron beam induced current, and the surface potential is therefore assumed. The SEM signal current is then determined from its simplified relation with the surface potential. Calculated profiles of the secondary electron (SE) signal current and their time-evolution behaviors can well fit the transient of the experimental SEM images. Results show that the variation of the surface potential due to the transient interface charges and the effect of SE redistribution result in transients of the SEM imaging signal and the image width of the buried trench.
Zhang
Hai-Bo
HB
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China. hbzhang@mail.xjtu.edu.cn
Li
Dao-Yu
DY
Li
Wei-Qin
WQ