title: Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy.
abstract: We report the measurement of a fast carrier lifetime and large band-gap-resonant optical nonlinearities in an InGaAsP sample grown by He-plasma-assisted molecular beam epitaxy. Using a 2-microm-thick sample grown on an InP substrate, we observed a carrier lifetime of 15 ps and an index change as large as 0.077 induced by an intense 1-ps pulse at a wavelength of 1.57 microm. Good crystalline structure is maintained in the material during growth, and the absorption spectrum shows a sharp band edge. These properties indicate that materials produced by He-plasma-assisted growth have potential applications in compact ultrafast photonic devices.
authors.forename: L
authors.initials: L
authors.lastname: Qian
authors.forename: S D
authors.initials: SD
authors.lastname: Benjamin
authors.forename: P W
authors.initials: PW
authors.lastname: Smith
authors.forename: B J
authors.initials: BJ
authors.lastname: Robinson
authors.forename: D A
authors.initials: DA
authors.lastname: Thompson