Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy.
The applicability of a general transfer-matrix method for optical analysis of multilayers reported earlier [Katsidis and Siapkas, Appl. Opt. 41, 3978 (2002)] is being extended so as to simulate asymmetric implantation doping profiles using distributions with four moments. The sensitivity of infrared reflectance spectra regarding the variation of the first four moments of a Pearson free carrier distribution is demonstrated. Experimental data of 1.5 MeV as well as 2.5 MeV As implantation into p-Si followed by annealing at 1100 degrees C are presented, suggesting the need to use two joined Pearson IV distribution segments in the simulation of annealed profiles. A twin peak observed in the 1.5 MeV case is confirmed by Rutherford backscattering analysis.
Katsidis
Charalambos C
CC
Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece. katsidis@materials.uoc.gr