Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots.
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.
Kalliakos
Sokratis
S
NEST INFM-CNR and Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa, Italy.
Pellegrini
Vittorio
V
Garcia
Cesar Pascual
CP
Pinczuk
Aron
A
Pfeiffer
Loren N
LN
West
Ken W
KW
D000535:Aluminum / Q000737:chemistry* / Q000528:radiation effects; D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D004579:Electron Transport / Q000528:radiation effects; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum