title: Charge noise in liquid-gated single-wall carbon nanotube transistors.
abstract: The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits and sensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with the length of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strong evidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel length of the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on the noise magnitude in SWNT-FETs.
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
authors.forename: Jaan
authors.initials: J
authors.lastname: Männik
authors.forename: Iddo
authors.initials: I
authors.lastname: Heller
authors.forename: Anne M
authors.initials: AM
authors.lastname: Janssens
authors.forename: Serge G
authors.initials: SG
authors.lastname: Lemay
authors.forename: Cees
authors.initials: C
authors.lastname: Dekker
mesh_terms: D016477:Artifacts; D003198:Computer Simulation; D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012996:Solutions; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D012996:Solutions