title: High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm.
abstract: We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.
authors.affiliation: Institute of Photonics, SUPA, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow, G4 0NW, UK. johnmark.hopkins@strath.ac.uk
authors.forename: J-M
authors.initials: JM
authors.lastname: Hopkins
authors.forename: N
authors.initials: N
authors.lastname: Hempler
authors.forename: B
authors.initials: B
authors.lastname: Rösener
authors.forename: N
authors.initials: N
authors.lastname: Schulz
authors.forename: M
authors.initials: M
authors.lastname: Rattunde
authors.forename: C
authors.initials: C
authors.lastname: Manz
authors.forename: K
authors.initials: K
authors.lastname: Köhler
authors.forename: J
authors.initials: J
authors.lastname: Wagner
authors.forename: D
authors.initials: D
authors.lastname: Burns