title: Single-crystalline ZnGa2O4 spinel phosphor via a single-source inorganic precursor route.
abstract: The synthesis of single-crystalline ZnGa 2O 4 spinel phosphor with intense ultraviolet-emitting properties through a novel single-source inorganic precursor route is reported. This synthetic approach involves the calcination of a Zn-Ga layered double hydroxide precursor followed by selective leaching of the self-generated zinc oxide. Material characterization has been presented by chemical analysis, X-ray diffraction analysis, thermogravimetric-differential thermal analysis, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, electron paramagnetic resonance, nuclear magnetic resonance, extended X-ray absorption fine structure analysis, UV-vis, and photoluminescence measurements. The results indicate that a single-crystalline ZnGa 2O 4 spinel with an average particle size of around 150 nm has been obtained at a lower calcination temperature and shorter calcination time compared with that with the high-temperature solid-state reaction method, based on the fact that the large amount of highly dispersed ZnO particles generated during the high-temperature calcination of the single-source inorganic precursor has a remarkable segregation and inhibition effect on the growth of ZnGa 2O 4 spinel. Furthermore, it has been confirmed that that Ga (3+) ions locate not only on the octahedral sites but also on the tetrahedral sites in the matrix of the ZnGa 2O 4 spinel structure, and the Ga-O coordination environment has a great influence on the photoluminescence of ZnGa 2O 4 phosphors.
authors.affiliation: State Key Laboratory of Chemical Resource Engineering, P.O. Box 98, Beijing University of Chemical Technology, Beijing, P.R. China
authors.forename: Lu
authors.initials: L
authors.lastname: Zou
authors.forename: Xu
authors.initials: X
authors.lastname: Xiang
authors.forename: Min
authors.initials: M
authors.lastname: Wei
authors.forename: Feng
authors.initials: F
authors.lastname: Li
authors.forename: David G
authors.initials: DG
authors.lastname: Evans