title: Electronic transport in phosphorus-doped silicon nanocrystal networks.
abstract: We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes.
authors.affiliation: Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany.
authors.forename: A R
authors.initials: AR
authors.lastname: Stegner
authors.forename: R N
authors.initials: RN
authors.lastname: Pereira
authors.forename: K
authors.initials: K
authors.lastname: Klein
authors.forename: R
authors.initials: R
authors.lastname: Lechner
authors.forename: R
authors.initials: R
authors.lastname: Dietmueller
authors.forename: M S
authors.initials: MS
authors.lastname: Brandt
authors.forename: M
authors.initials: M
authors.lastname: Stutzmann
authors.forename: H
authors.initials: H
authors.lastname: Wiggers