title: Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.
abstract: We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.
authors.forename: Haohai
authors.initials: H
authors.lastname: Yu
authors.forename: Huaijin
authors.initials: H
authors.lastname: Zhang
authors.forename: Zhengping
authors.initials: Z
authors.lastname: Wang
authors.forename: Jiyang
authors.initials: J
authors.lastname: Wang
authors.forename: Yonggui
authors.initials: Y
authors.lastname: Yu
authors.forename: Minhua
authors.initials: M
authors.lastname: Jiang
authors.forename: Dingyuan
authors.initials: D
authors.lastname: Tang
authors.forename: Guoqiang
authors.initials: G
authors.lastname: Xie
authors.forename: Hang
authors.initials: H
authors.lastname: Luo