title: An integrated 16/spl times/16 PVDF pyroelectric sensor array.
abstract: This paper presents a fully integrated PVDF-on-silicon pyroelectric sensor array. The pyroelectric sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing pyroelectric sensor is a three-layer stack, consisting of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the pyroelectric sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2.4/spl times/10/sup -11/ W//spl radic/Hz at 100 Hz, and a specific detectivity of 4.4/spl times/10/sup 8/ cm /spl radic/Hz/W at 100 Hz.
authors.affiliation: Sch. of Eng., Napier Polytech. of Edinburgh, UK.
authors.forename: T D
authors.initials: TD
authors.lastname: Binnie
authors.forename: H J
authors.initials: HJ
authors.lastname: Weller
authors.forename: Z
authors.initials: Z
authors.lastname: He
authors.forename: D
authors.initials: D
authors.lastname: Setiadi