title: Polar discontinuity doping of the LaVO_{3}/SrTiO_{3} interface.
abstract: We have investigated the transport properties of LaVO_{3}/SrTiO_{3} Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_{2}/LaO/TiO_{2} polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_{2}/SrO/TiO_{2} interface, formed by inserting a single layer of bulk metallic SrVO3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.
authors.affiliation: Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8651, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Hotta
authors.forename: T
authors.initials: T
authors.lastname: Susaki
authors.forename: H Y
authors.initials: HY
authors.lastname: Hwang