Electronic transport in phosphorus-doped silicon nanocrystal networks.
We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes.
Stegner
A R
AR
Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany.
Pereira
R N
RN
Klein
K
K
Lechner
R
R
Dietmueller
R
R
Brandt
M S
MS
Stutzmann
M
M
Wiggers
H
H