title: Electronegative oligothiophenes based on difluorodioxocyclopentene-annelated thiophenes: synthesis, properties, and n-type FET performances.
abstract: A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 x 10(-2) cm2 V(-1) s(-1).
authors.affiliation: The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Ie
authors.forename: Yoshikazu
authors.initials: Y
authors.lastname: Umemoto
authors.forename: Makoto
authors.initials: M
authors.lastname: Okabe
authors.forename: Takahiro
authors.initials: T
authors.lastname: Kusunoki
authors.forename: Ken-ichi
authors.initials: K
authors.lastname: Nakayama
authors.forename: Yong-Jin
authors.initials: YJ
authors.lastname: Pu
authors.forename: Junji
authors.initials: J
authors.lastname: Kido
authors.forename: Hirokazu
authors.initials: H
authors.lastname: Tada
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Aso