title: Surface metal-insulator transition on a vanadium pentoxide (001) single crystal.
abstract: In situ band gap mapping of the V2O5(001) crystal surface revealed a reversible metal-to-insulator transition at 350-400 K, which occurs inhomogeneously across the surface and expands preferentially in the direction of the vanadyl (V=O) double rows. Supported by density functional theory and Monte Carlo simulations, the results are rationalized on the basis of the anisotropic growth of vanadyl-oxygen vacancies and a concomitant oxygen loss driven metal-to-insulator transition at the surface. At elevated temperatures irreversible surface reduction proceeds sequentially as V2O5(001) --> V6O13(001) --> V2O3(0001).
authors.affiliation: Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin 14195, Germany.
authors.forename: R-P
authors.initials: RP
authors.lastname: Blum
authors.forename: H
authors.initials: H
authors.lastname: Niehus
authors.forename: C
authors.initials: C
authors.lastname: Hucho
authors.forename: R
authors.initials: R
authors.lastname: Fortrie
authors.forename: M V
authors.initials: MV
authors.lastname: Ganduglia-Pirovano
authors.forename: J
authors.initials: J
authors.lastname: Sauer
authors.forename: S
authors.initials: S
authors.lastname: Shaikhutdinov
authors.forename: H-J
authors.initials: HJ
authors.lastname: Freund