A study of vacancy-related defects in (Pb,La)(Zr,Ti)O(3) thin films using positron annihilation.
The formation of vacancy-type defects in La-doped lead zirconate titanate (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10(-5) Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes.
Friessnegg
T
T
Maryland Univ., College Park, MD, USA.
Aggarwal
S
S
Nielsen
B
B
Ramesh
R
R
Keeble
D J
DJ
Poindexter
E H
EH