Electronegative oligothiophenes based on difluorodioxocyclopentene-annelated thiophenes: synthesis, properties, and n-type FET performances.
A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 x 10(-2) cm2 V(-1) s(-1).
Ie
Yutaka
Y
The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Umemoto
Yoshikazu
Y
Okabe
Makoto
M
Kusunoki
Takahiro
T
Nakayama
Ken-ichi
K
Pu
Yong-Jin
YJ
Kido
Junji
J
Tada
Hirokazu
H
Aso
Yoshio
Y