title: Transport and percolation in a low-density high-mobility two-dimensional hole system.
abstract: We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.
authors.affiliation: Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974, USA.
authors.forename: M J
authors.initials: MJ
authors.lastname: Manfra
authors.forename: E H
authors.initials: EH
authors.lastname: Hwang
authors.forename: S
authors.initials: S
authors.lastname: Das Sarma
authors.forename: L N
authors.initials: LN
authors.lastname: Pfeiffer
authors.forename: K W
authors.initials: KW
authors.lastname: West
authors.forename: A M
authors.initials: AM
authors.lastname: Sergent