title: Control of wettability of molecularly thin liquid films by nanostructures.
abstract: The patterning of liquid thin films on solid surfaces is very important in various fields of science and engineering related to surfaces and interfaces. A method of nanometer-scale patterning of a molecularly thin liquid film on a silicon substrate using the lyophobicity of the oxide nanostructures has recently been reported (Fukuzawa, K.; Deguchi, T.; Kawamura, J.; Mitsuya, Y.; Muramatsu, T.; Zhang, H. Appl. Phys. Lett. 2005, 87, 203108). However, the origin of the lyophobicity of the nanostructure with a height of around 1 nm, which was fabricated by probe oxidation, has not yet been clarified. In the present study, the change in thickness of the liquid film on mesa-shaped nanostructures and the wettability for the various combinations of the thickness of the liquid films and the height of ridge-shaped nanostructures were investigated. These revealed that lyophobicity is caused by a lowering of the intermolecular interaction between the liquid and silicon surfaces by the nanostructure and enables the patterning of a liquid film along it. The tendency of the wettability for a given liquid film and nanostructure size can be predicted by estimating the contributions of the intermolecular interaction and capillary pressure. In this method, the height of the nanostructure can control the wettability. These results can provide a novel method of nanoscale patterning of liquid thin films, which will be very useful in creating new functional surfaces.
authors.affiliation: Department of Micro/Nano Systems Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. fukuzawa@nuem.nagoya-u.ac.jp
authors.forename: Kenji
authors.initials: K
authors.lastname: Fukuzawa
authors.forename: Takanori
authors.initials: T
authors.lastname: Deguchi
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Yamawaki
authors.forename: Shintaro
authors.initials: S
authors.lastname: Itoh
authors.forename: Takuro
authors.initials: T
authors.lastname: Muramatsu
authors.forename: Hedong
authors.initials: H
authors.lastname: Zhang