title: Dopant-assisted concentration enhancement of substitutional Mn in Si and Ge.
abstract: The influence of p- and n-type electronic dopants on Mn incorporation in bulk Si and Ge is studied using first-principles calculations within density functional theory. In Si, it is found that the site preference of a single Mn atom is reversed from interstitial to substitutional in the presence of a neighboring n-type dopant. In Ge, a Mn atom is more readily incorporated into the lattice when an n-type dopant is present in its immediate neighborhood, forming a stable Mn-dopant pair with both impurities at substitutional sites. A detailed analysis of the magnetic exchange interactions between such pairs reveals a new type of magnetic anisotropy in both systems.
authors.affiliation: Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
authors.forename: Wenguang
authors.initials: W
authors.lastname: Zhu
authors.forename: Zhenyu
authors.initials: Z
authors.lastname: Zhang
authors.forename: Efthimios
authors.initials: E
authors.lastname: Kaxiras