title: Giant intrinsic carrier mobilities in graphene and its bilayer.
abstract: We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
authors.affiliation: Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom.
authors.forename: S V
authors.initials: SV
authors.lastname: Morozov
authors.forename: K S
authors.initials: KS
authors.lastname: Novoselov
authors.forename: M I
authors.initials: MI
authors.lastname: Katsnelson
authors.forename: F
authors.initials: F
authors.lastname: Schedin
authors.forename: D C
authors.initials: DC
authors.lastname: Elias
authors.forename: J A
authors.initials: JA
authors.lastname: Jaszczak
authors.forename: A K
authors.initials: AK
authors.lastname: Geim