title: Calcium adsorption on MgO(100): energetics, structure, and role of defects.
abstract: The adsorption of Ca on the MgO(100) surface at 300 K has been studied using microcalorimetry, in combination with LEED, AES, ISS, work function, sticking probability measurements, and density functional theory (DFT) calculations. The MgO(100) thin films (approximately 4 nm thick) were grown epitaxially on a 1 microm thick Mo(100) single-crystal. The sticking probability of Ca on MgO(100) at 300 K is unity. On the basis of AES and ISS measurements, it was determined that Ca grows mainly as 3D particles on the MgO(100) surface with a density of approximately 1 x 10(12) islands/cm2. Ca adsorbs initially at defect sites with a very high heat of adsorption (approximately 410 kJ/mol). DFT calculations attribute this high initial heat to Ca binding to kink sites (376 kJ/mol), step sites (205 kJ/mol), and lower concentrations of stronger binding sites. The heat of adsorption decreases rapidly with coverage, reaching a minimum of 162 kJ/mol at approximately 0.3 ML, where Ca is mainly adding to small 3D Ca clusters. Afterward, it increases to the value of bulk Ca heat of sublimation (178 kJ/mol) at approximately 1.2 ML, attributed to the increase in stability with increasing Ca particle size. A 1.0 eV decrease of the work function with Ca coverage from 0 to 0.3 ML indicates that Ca adsorbed at defects is cationic, in agreement with calculations showing that Ca donates electron density to the MgO. Light ion sputtering of the MgO(100) surface generates point defects, but these do not change the heat of adsorption versus coverage, implying that they do not nucleate Ca particles. Oxygen vacancies are a likely candidate; DFT calculations show that F and F+ center vacancies bind Ca more weakly than terrace sites. More extensive sputtering creates extended defects (such as steps and kinks) that adsorb Ca with heats of adsorption up to approximately 400 kJ/mol, similar to that at the intrinsic defect sites.
authors.affiliation: Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, USA.
authors.forename: Junfa
authors.initials: J
authors.lastname: Zhu
authors.forename: Jason A
authors.initials: JA
authors.lastname: Farmer
authors.forename: Nancy
authors.initials: N
authors.lastname: Ruzycki
authors.forename: Lijun
authors.initials: L
authors.lastname: Xu
authors.forename: Charles T
authors.initials: CT
authors.lastname: Campbell
authors.forename: Graeme
authors.initials: G
authors.lastname: Henkelman