title: Defect cores investigated by x-ray scattering close to forbidden reflections in silicon.
abstract: A new x-ray scattering method is presented making possible the detection of defects and the investigation of the structure of their cores. The method uses diffuse x-ray scattering measured close to a forbidden diffraction peak, in which the intensity scattered from the distorted crystal lattice around the defects is minimized. As a first example of this nondestructive method we demonstrate how the local compression of the extra {111} double planes in extrinsic stacking faults in Si can be probed and quantified using a continuum approach for the simulation of the displacements. The results of the theory developed are found to be in very good agreement with atomistic simulations and experiments.
authors.affiliation: ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex, France.
authors.forename: M-I
authors.initials: MI
authors.lastname: Richard
authors.forename: T H
authors.initials: TH
authors.lastname: Metzger
authors.forename: V
authors.initials: V
authors.lastname: Holý
authors.forename: K
authors.initials: K
authors.lastname: Nordlund