An application of polarized domains in ferroelectric thin films using scanning probe microscope.
The feasibility of utilizing PZT films as future data storage media was investigated using a modified AFM. Applying voltages between a conductive AFM tip and the PZT films causes the switching of ferroelectric domains. The domains are observed using an EFM imaging technique. The experimental results and calculations revealed that the electrostatic force generated between the polarized area and the tip is a main contributor for the imaging of the polarized domains. The written features on ferroelectric films were less than 100 nm in diameter, implying the possibility of realizing data storage devices with ultra-high area density. The disappearance of the polarized images without any applied voltage was observed, which is a drawback in this application of PZT thin films.
Shin
H
H
SamsungAdv anced Institute of Technology, Micro Systems Lab., Suwon 440-600, Korea. hjshin@saitgw.sait.samsung.co.kr
Lee
K M
KM
Moon
W K
WK
Jeon
J U
JU
Lim
G
G
Pak
Y E
YE
Park
J H
JH
Yoon
K H
KH