title: Formation mechanism of one-dimensional Si islands on a H/Si(001) surface.
abstract: The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2x1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.
authors.affiliation: National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. NARA.Jun@nims.go.jp
authors.forename: Jun
authors.initials: J
authors.lastname: Nara
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Kajiyama
authors.forename: Tomihiro
authors.initials: T
authors.lastname: Hashizume
authors.forename: Yuji
authors.initials: Y
authors.lastname: Suwa
authors.forename: Seiji
authors.initials: S
authors.lastname: Heike
authors.forename: Shinobu
authors.initials: S
authors.lastname: Matsuura
authors.forename: Taro
authors.initials: T
authors.lastname: Hitosugi
authors.forename: Takahisa
authors.initials: T
authors.lastname: Ohno