Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.
We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.
Yu
Haohai
H
State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.
Zhang
Huaijin
H
Wang
Zhengping
Z
Wang
Jiyang
J
Yu
Yonggui
Y
Jiang
Minhua
M
Tang
Dingyuan
D
Xie
Guoqiang
G
Luo
Hang
H