Driving-dependent damping of Rabi oscillations in two-level semiconductor systems.
We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.
Mogilevtsev
D
D
Institute of Physics, NASB, F. Skarina Avenue 68, Minsk, 220072, Belarus.
Nisovtsev
A P
AP
Kilin
S
S
Cavalcanti
S B
SB
Brandi
H S
HS
Oliveira
L E
LE