Giant intrinsic carrier mobilities in graphene and its bilayer.
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
Morozov
S V
SV
Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom.
Novoselov
K S
KS
Katsnelson
M I
MI
Schedin
F
F
Elias
D C
DC
Jaszczak
J A
JA
Geim
A K
AK