Transport and percolation in a low-density high-mobility two-dimensional hole system.
We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.
Manfra
M J
MJ
Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974, USA.
Hwang
E H
EH
Das Sarma
S
S
Pfeiffer
L N
LN
West
K W
KW
Sergent
A M
AM