Measurement of elastic modulus s(11)(D) of thin film ZnO by resonance method.
The elastic modulus of thin film ZnO has been measured by attaching a Si-ZnO strip to a ceramic bimorph, deflecting the latter with an electric signal, and measuring the resonance frequencies of the Si-ZnO strip. The resonance frequencies of the Si-ZnO strip depend on the properties of both Si and ZnO. The properties of Si are known, and, thus, the elastic modulus of thin film ZnO can be calculated from the resonance frequency of the beam. The results we obtained are presented in this report.
Jade
S A
SA
Dept. of Electr. and Comput. Eng., Boston Univ., MA.
Smits
J G
JG