title: Realization of a semiconductor-based cavity soliton laser.
abstract: The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.
authors.affiliation: SUPA, Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 ONG, Scotland, United Kingdom.
authors.forename: Y
authors.initials: Y
authors.lastname: Tanguy
authors.forename: T
authors.initials: T
authors.lastname: Ackemann
authors.forename: W J
authors.initials: WJ
authors.lastname: Firth
authors.forename: R
authors.initials: R
authors.lastname: Jäger