title: A study of vacancy-related defects in (Pb,La)(Zr,Ti)O(3) thin films using positron annihilation.
abstract: The formation of vacancy-type defects in La-doped lead zirconate titanate (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10(-5) Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes.
authors.affiliation: Maryland Univ., College Park, MD, USA.
authors.forename: T
authors.initials: T
authors.lastname: Friessnegg
authors.forename: S
authors.initials: S
authors.lastname: Aggarwal
authors.forename: B
authors.initials: B
authors.lastname: Nielsen
authors.forename: R
authors.initials: R
authors.lastname: Ramesh
authors.forename: D J
authors.initials: DJ
authors.lastname: Keeble
authors.forename: E H
authors.initials: EH
authors.lastname: Poindexter