Low temperature preparation of bismuth-related ferroelectrics powder and thin films by hydrothermal synthesis.
Bi(4)Ti(3)O(12) (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiO(x)/SiO(2)/Si. Bi(4)Ti(3)O(12) or TiO(2) gel solution was formed and annealed at 350 degrees C. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO(2) anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.
Nguyen
T Tho
TT
Osaka University, Osaka, Japan. truongtho@semi.ee.es.osaka-u.ac.jp
Inoue
Akihiro
A
Noda
Minoru
M
Okuyama
Masanori
M
D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004563:Electrochemistry / Q000379:methods; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D011208:Powders; D013499:Surface Properties; D013696:Temperature; D014867:Water / Q000737:chemistry*
D008567:Membranes, Artificial; D011208:Powders; D014867:Water; D001729:Bismuth