An organic/Si nanowire hybrid field configurable transistor.
We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.
Lai
Qianxi
Q
Department of Mechanical and Aerospace Engineering and California NanoSystems Institute, University of California, Los Angeles 90095, USA.
Li
Zhiyong
Z
Zhang
Lei
L
Li
Xuema
X
Stickle
William F
WF
Zhu
Zuhua
Z
Gu
Zhen
Z
Kamins
Theodore I
TI
Williams
R Stanley
RS
Chen
Yong
Y