title: Highly infrared reflective behavior of transparent conductive ZnO:Ga films synthesized by DC reactive magnetron sputtering.
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, P.R. China. mqb7925921@163.com
authors.forename: Quan-Bao
authors.initials: QB
authors.lastname: Ma
authors.forename: Zhi-Zhen
authors.initials: ZZ
authors.lastname: Ye
authors.forename: Hai-Ping
authors.initials: HP
authors.lastname: He
authors.forename: Yong
authors.initials: Y
authors.lastname: Luo
authors.forename: Li-Ping
authors.initials: LP
authors.lastname: Zhu
authors.forename: Jing-Yun
authors.initials: JY
authors.lastname: Huang
authors.forename: Yin-Zhu
authors.initials: YZ
authors.lastname: Zhang
authors.forename: Bing-Hui
authors.initials: BH
authors.lastname: Zhao
mesh_terms: D004553:Electric Conductivity; D005708:Gallium / Q000737:chemistry*; D008280:Magnetics / Q000295:instrumentation*; D008567:Membranes, Artificial; D008855:Microscopy, Electron, Scanning / Q000379:methods; D013053:Spectrophotometry / Q000379:methods; D014961:X-Ray Diffraction; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D008567:Membranes, Artificial; D005708:Gallium; D015034:Zinc Oxide