Sputtering ZnO films on langasite and its SAW properties.
C-axis-oriented ZnO films were sputtered on Langasite substrate (LGS, La(3)Ga(5)SiO(14)). The crystalline structure of the films was determined by grazing incident angle X-ray diffraction, the surface microstructure of films was investigated by scanning electron microscopy and atomic force microscopy, the atom composition ratio O/Zn of films was determined by energy dispersive X-ray spectroscopy, and the resistivity of films was determined by the four-point probe instrument. The measurement results showed those films prepared were all polycrystalline hexagonal ZnO films. By analyzing the microstructure of the ZnO films, those prepared at the oxygen flow rate (O(2)/O(2)+Ar) of 20%, the RF power of 200 W, and the substrate temperature of 200 degrees C had the best performance: highly c-axis-oriented microstructures, dense surface morphology, and the atom composition ratio 1.02. The measured scattering parameters of the SAW device fabricated on the composite substrate (ZnO/LGS) with film thickness 1.76 microm showed an average shifted velocity around 2741 m/s at 57.1 MHz and a electromagnetic coupling coefficient greater than 1%.
Wu
Sean
S
Department of Electronics Engineering and Computer Science, Tung Fang Institute of Technology, Hunei Shiang, Kaohsiung County, Taiwan, R.O.C. wusean@giga.net.tw
Yan
Guo-Jun
GJ
Lee
Maw-Shung
MS
Ro
Ruyen
R
Chen
K I
KI
D000162:Acoustics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008567:Membranes, Artificial; D015203:Reproducibility of Results; D012542:Scattering, Radiation; D012680:Sensitivity and Specificity; D017640:Silicates / Q000737:chemistry*; D014159:Transducers; D015034:Zinc Oxide / Q000737:chemistry*
C470742:La3Ga5SiO14; D008567:Membranes, Artificial; D017640:Silicates; D015034:Zinc Oxide