title: An organic/Si nanowire hybrid field configurable transistor.
abstract: We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.
authors.affiliation: Department of Mechanical and Aerospace Engineering and California NanoSystems Institute, University of California, Los Angeles 90095, USA.
authors.forename: Qianxi
authors.initials: Q
authors.lastname: Lai
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Li
authors.forename: Lei
authors.initials: L
authors.lastname: Zhang
authors.forename: Xuema
authors.initials: X
authors.lastname: Li
authors.forename: William F
authors.initials: WF
authors.lastname: Stickle
authors.forename: Zuhua
authors.initials: Z
authors.lastname: Zhu
authors.forename: Zhen
authors.initials: Z
authors.lastname: Gu
authors.forename: Theodore I
authors.initials: TI
authors.lastname: Kamins
authors.forename: R Stanley
authors.initials: RS
authors.lastname: Williams
authors.forename: Yong
authors.initials: Y
authors.lastname: Chen