title: Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation.
abstract: Gallium arsenide (GaAs) metal-semiconductor-metal (MSM) photodetectors have unique properties including high-bandwidth, linearity, and biphase response that make them suitable as mixers and programmable weights for microwave and communications applications. An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported. It uses MSM Schottky photodiodes formed in a GaAs/Al(0.3)Ga(0.7)As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single-sideband modulation of the microwave signal. Radio frequency and undesired-sideband suppression of 36 and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors was > or = 29 GHz.
authors.affiliation: Naval Research Laboratory, Washington, D.C. 20375-5347, USA.
authors.forename: G W
authors.initials: GW
authors.lastname: Anderson
authors.forename: L E
authors.initials: LE
authors.lastname: Chipman
authors.forename: F J
authors.initials: FJ
authors.lastname: Kub
authors.forename: D
authors.initials: D
authors.lastname: Park
authors.forename: M Y
authors.initials: MY
authors.lastname: Frankel
authors.forename: T F
authors.initials: TF
authors.lastname: Carruthers
authors.forename: J A
authors.initials: JA
authors.lastname: Modolo
authors.forename: K D
authors.initials: KD
authors.lastname: Hobart
authors.forename: D S
authors.initials: DS
authors.lastname: Katzer