Wavelength shift of InP-based InAs quantum dot lasers above room temperature.
For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 degrees C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 degrees C and then, decreased with (-)0.419 nm/K above 50 degrees C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.
Kim
Jin Soo
JS
Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Engineering College, Chonbuk National University, Jeonju 561-756, Chonbuk, Korea.
Lee
Cheul-Ro
CR
Seol
Kyeong Won
KW
Oh
Dae Kon
DK