High K BaTiO(3) films from metalloorganic precursors.
Crack-free and dense BaTiO(3) films 4 to 8 mum thick were prepared by spinning a solution of metalloorganic precursors onto an appropriate substrate, and firing and annealing the film in air at certain temperatures to obtain appropriate grain sizes. The electrical properties of the films were studied as a function of grain size, temperature, frequency, and DC bias. Films with a grain size of 0.2 mum showed ferroelectric properties similar to bulk BaTiO(3).
Xu
J
J
Turner Lab., Purdue Univ., West Lafayette, IN.
Shaikh
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Vest
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