title: Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature.
abstract: Spatially resolved near-field luminescence spectroscopy was carried out on locally grown InP ridges, overgrown by a GaInAsP layer in metal organic molecular beam epitaxy. For free access to the quaternary layer the cleaved surface was investigated. Two different reflection scanning near-field microscopy setups were used. In the illumination mode we were able to estimate the charge-carrier diffusion in the InP. For improving the spatial resolution, measurements were also carried out in the collection mode. Here a shift of the center wavelength toward lower energy occurs near the side facets. This can be a result of a material composition gradient or of strained growth near the side facets. A second recombination channel at 1115 nm occurs at the growth-nongrowth transition. With the simultaneous recorded topography this recombination channel can be localized in the quaternary layer grown on the side of the InP ridge.
authors.affiliation: Department of Experimental Physics, University of Ulm, D-89069 Ulm/Donau, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Barenz
authors.forename: A
authors.initials: A
authors.lastname: Eska
authors.forename: O
authors.initials: O
authors.lastname: Hollricher
authors.forename: O
authors.initials: O
authors.lastname: Marti
authors.forename: M
authors.initials: M
authors.lastname: Wachter
authors.forename: U
authors.initials: U
authors.lastname: Schöffel
authors.forename: H
authors.initials: H
authors.lastname: Heinecke