Precision frequency trimming of SAW and STW resonators using Xe(+) heavy ion bombardment.
A method for precision frequency trimming of surface acoustic wave (SAW) and surface transverse wave (STW) based resonant devices using a Xe(+) heavy ion bombardment technique is described. The devices are downtrimmed in frequency in an in-situ monitoring process by means of a Kaufmann type ion source that allows first a rough and then a fine frequency trimming with an accuracy of 1 ppm in a single continuous in-situ monitoring process. An improvement of the device insertion loss and unloaded Q as a result of the trimming process is achieved. Single mode 776 MHz STW resonators can be downtrimmed by more than 5000 ppm without deteriorating their parameters while SAW resonators allow a much lower frequency downshift. The method is simple and can cost effectively be applied to SAW and STW device fabrication.
Aliev
V S
VS
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk.
Avramov
I D
ID