title: Electrical and reliability properties of PZT thin films for ULSI DRAM applications.
abstract: The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q(c)) of 15 muC/cm(2) (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.
authors.affiliation: Dept. of Electr. and Comput. Eng., Texas Univ., Austin, TX.
authors.forename: J
authors.initials: J
authors.lastname: Carrano
authors.forename: C
authors.initials: C
authors.lastname: Sudhama
authors.forename: V
authors.initials: V
authors.lastname: Chikarmane
authors.forename: J
authors.initials: J
authors.lastname: Lee
authors.forename: A
authors.initials: A
authors.lastname: Tasch
authors.forename: W
authors.initials: W
authors.lastname: Shepherd
authors.forename: N
authors.initials: N
authors.lastname: Abt