title: Spin diode based on Fe/MgO double tunnel junction.
abstract: We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high>1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, approximately 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.
authors.affiliation: Nanostructure Physics, Royal Institute of Technology, 10691 Stockholm, Sweden.
authors.forename: A
authors.initials: A
authors.lastname: Iovan
authors.forename: S
authors.initials: S
authors.lastname: Andersson
authors.forename: Yu G
authors.initials: YG
authors.lastname: Naidyuk
authors.forename: A
authors.initials: A
authors.lastname: Vedyaev
authors.forename: B
authors.initials: B
authors.lastname: Dieny
authors.forename: V
authors.initials: V
authors.lastname: Korenivski