Electrical and reliability properties of PZT thin films for ULSI DRAM applications.
The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q(c)) of 15 muC/cm(2) (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.
Carrano
J
J
Dept. of Electr. and Comput. Eng., Texas Univ., Austin, TX.
Sudhama
C
C
Chikarmane
V
V
Lee
J
J
Tasch
A
A
Shepherd
W
W
Abt
N
N