Porous low dielectric constant materials for microelectronics.
Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Integration of such materials into microelectronic circuits, however, poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. These issues are the subject of the present paper.
Baklanov
Mikhail R
MR
IMEC and Department of Electrical Engineering, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium. baklanov@imec.be
Maex
Karen
K
D004553:Electric Conductivity; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D008904:Miniaturization; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D011108:Polymers / Q000737:chemistry*; D016062:Porosity; D012666:Semiconductors; D014159:Transducers
D011108:Polymers