title: Wavelength shift of InP-based InAs quantum dot lasers above room temperature.
abstract: For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 degrees C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 degrees C and then, decreased with (-)0.419 nm/K above 50 degrees C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.
authors.affiliation: Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Engineering College, Chonbuk National University, Jeonju 561-756, Chonbuk, Korea.
authors.forename: Jin Soo
authors.initials: JS
authors.lastname: Kim
authors.forename: Cheul-Ro
authors.initials: CR
authors.lastname: Lee
authors.forename: Kyeong Won
authors.initials: KW
authors.lastname: Seol
authors.forename: Dae Kon
authors.initials: DK
authors.lastname: Oh