title: A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.
abstract: Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, California 94025, USA.
authors.forename: Gael F
authors.initials: GF
authors.lastname: Close
authors.forename: Shinichi
authors.initials: S
authors.lastname: Yasuda
authors.forename: Bipul
authors.initials: B
authors.lastname: Paul
authors.forename: Shinobu
authors.initials: S
authors.lastname: Fujita
authors.forename: H-S Philip
authors.initials: HS
authors.lastname: Wong
mesh_terms: D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008839:Microelectrodes; D008872:Microwaves; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010865:Pilot Projects; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D012825:Silicon