Preferred crystal orientation of sol-gel-derived Bi4-xLaxTi3O12 thin films on silicon substrates.
Polycrystalline thin films of La-substituted bismuth titanate (BLT) were formed directly on p-type Si(100) substrates by using sol-gel and spin coat methods. The BLT film and interfacial layer between BLT and Si were quantitatively investigated by the X-ray reflectivity method. Also, crystal orientations of sub-100-nm-thick BLT thin films were confirmed by X-ray diffraction using a synchrotron radiation source. The preferred c-axis orientation normal to the surface depended on the crystallization temperature. The difference in the preferred c-axis orientations of the BLT films caused the difference in the hysteresis voltage width in the capacitance-voltage characteristics of Au/BLT/p-Si structures. Furthermore, the c-axis of the Bilayered structure was preferentially oriented and aligned in the in-plane direction.
Tajiri
Takayuki
T
Department of Applied Physics, Fukuoka University, Jonan-ku, Fukuoka, Japan. tajiri@fukuoka-u.ac.jp
Sumitani
Kazushi
K
Haruki
Rie
R
Kohno
Atsushi
A
D016880:Anisotropy; D002516:Ceramics / Q000737:chemistry*; D003461:Crystallography / Q000379:methods*; D017097:Electric Impedance; D005782:Gels / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D044367:Phase Transition; D011208:Powders; D012825:Silicon / Q000737:chemistry*
D005782:Gels; D008567:Membranes, Artificial; D011208:Powders; D012825:Silicon