An X-band, high power dielectric resonator oscillator for future military systems.
A 9.0-GHz dielectric resonator oscillator (DRO), generating a CW output power of 2.5 W at room temperature, has been designed and fabricated using a high-power GaAs MESFET and a dielectric resonator (DR) in a parallel feedback configuration. The oscillator exhibited a frequency stability of better than 130 ppm, without any temperature compensation, over the range -50 degrees C to +50 degrees C. The output power varied from +35 dBm (3.2 W) at -50 degrees C to +33 dBm (2 W) at +50 degrees C. The single-sideband phase noise levels were measured and found to be -105 and -135 dBc/Hz, at 10- and 100-kHz carrier offset frequencies, respectively. The oscillator output was then fed into a single-stage high-power MESFET amplifier, resulting in a total RF power output of 6.5 W. The overall DC to RF conversion efficiency of the 6.5-W unit was approximately 15.3%
Mizan
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US Army Res. Lab., Fort Monmouth, NJ.
Sturzebecher
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Higgins
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Paolella
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