title: GaN-Based Solar-Ultraviolet Detection Instrument.
abstract: We report on the fabrication of a solar-UV monitoring system that uses GaN-based photodetectors. GaN photoconductors, p-n junction photodiodes, and Schottky barrier photodiodes have been fabricated and characterized as UV sensors. The best performances are obtained in Schottky photodiodes, which show a linear response, a flat responsivity of 100 mA/W, a visible rejection ratio higher than 10(3), and a noise-equivalent power of 1 nW/Hz(-1/2). Preliminary data on Al(x)Ga(1-x)N (x = 0.15, 0.22) detectors are also presented. Using GaN Schottky diodes, we fabricate and evaluate a complete solar-UV detection head.
authors.forename: E
authors.initials: E
authors.lastname: Monroy
authors.forename: F
authors.initials: F
authors.lastname: Calle
authors.forename: C
authors.initials: C
authors.lastname: Angulo
authors.forename: P
authors.initials: P
authors.lastname: Vila
authors.forename: A
authors.initials: A
authors.lastname: Sanz
authors.forename: J A
authors.initials: JA
authors.lastname: Garrido
authors.forename: E
authors.initials: E
authors.lastname: Calleja
authors.forename: E
authors.initials: E
authors.lastname: M Oz
authors.forename: S
authors.initials: S
authors.lastname: Haffouz
authors.forename: B
authors.initials: B
authors.lastname: Beaumont
authors.forename: F
authors.initials: F
authors.lastname: Omnes
authors.forename: P
authors.initials: P
authors.lastname: Gibart