A radio frequency single-electron transistor based on an InAs/InP heterostructure nanowire.
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz(-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz(-1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 microe rms Hz(-1/2) at 10 Hz.
Nilsson
Henrik A
HA
Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. henrik.nilsson@ftf.lth.se
Duty
Tim
T
Abay
Simon
S
Wilson
Chris
C
Wagner
Jakob B
JB
Thelander
Claes
C
Delsing
Per
P
Samuelson
Lars
L