title: Thin-film ferroelectrics of PZT of sol-gel processing.
abstract: The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4x10(6) V/m and 0.36 C/m(2). The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.
authors.affiliation: Dept. of Ceramic Eng., Illinois Univ., Urbana, IL.
authors.forename: S K
authors.initials: SK
authors.lastname: Dey
authors.forename: K D
authors.initials: KD
authors.lastname: Budd
authors.forename: D A
authors.initials: DA
authors.lastname: Payne