title: Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry.
abstract: High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum-nickel (Al-Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al-Ni layer by a 1-keV Ar sputtering, the sensitivity of the interface oxygen was improved to be twice higher than that before sputtering. The results revealed that the oxygen at the interface relates to the contact characteristics.
authors.affiliation: Electronics Research Laboratory, Kobe Steel Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan. ichihara.chikara@kobelco.com
authors.forename: Chikara
authors.initials: C
authors.lastname: Ichihara
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Kawakami
authors.forename: Satoshi
authors.initials: S
authors.lastname: Yasuno
authors.forename: Aya
authors.initials: A
authors.lastname: Hino
authors.forename: Kazuhisa
authors.initials: K
authors.lastname: Fujikawa
authors.forename: Akira
authors.initials: A
authors.lastname: Kobayashi
authors.forename: Mototaka
authors.initials: M
authors.lastname: Ochi
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Gotoh
authors.forename: Toshihiro
authors.initials: T
authors.lastname: Kugimiya