Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry.
High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum-nickel (Al-Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al-Ni layer by a 1-keV Ar sputtering, the sensitivity of the interface oxygen was improved to be twice higher than that before sputtering. The results revealed that the oxygen at the interface relates to the contact characteristics.
Ichihara
Chikara
C
Electronics Research Laboratory, Kobe Steel Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan. ichihara.chikara@kobelco.com
Kawakami
Nobuyuki
N
Yasuno
Satoshi
S
Hino
Aya
A
Fujikawa
Kazuhisa
K
Kobayashi
Akira
A
Ochi
Mototaka
M
Gotoh
Hiroshi
H
Kugimiya
Toshihiro
T