title: Bernas ion source discharge simulation.
abstract: As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow, Russia.
authors.forename: I
authors.initials: I
authors.lastname: Roudskoy
authors.forename: T V
authors.initials: TV
authors.lastname: Kulevoy
authors.forename: S V
authors.initials: SV
authors.lastname: Petrenko
authors.forename: R P
authors.initials: RP
authors.lastname: Kuibeda
authors.forename: D N
authors.initials: DN
authors.lastname: Seleznev
authors.forename: V I
authors.initials: VI
authors.lastname: Pershin
authors.forename: A
authors.initials: A
authors.lastname: Hershcovitch
authors.forename: B M
authors.initials: BM
authors.lastname: Johnson
authors.forename: V I
authors.initials: VI
authors.lastname: Gushenets
authors.forename: E M
authors.initials: EM
authors.lastname: Oks
authors.forename: H P
authors.initials: HP
authors.lastname: Poole