title: Development of a MeV proton beam irradiation system.
abstract: A proton beam irradiation system for the application of the MeV class proton beam, such as an implantation for a power semiconductor device and a smart-cut technology for a semiconductor production process, has been developed. This system consists of a negative ion source, an Einzel lens for a low energy beam transport, accelerating tubes, a gas stripper, a Cockroft-Walton high voltage power supply with 1 MV, a vacuum pumping system, and a high pressure insulating gas system. The negative hydrogen ion source is based on TRIUMF's design. Following the tandem accelerator, a pair of magnets is installed for raster scanning of the MeV proton beam to obtain a uniform irradiation pattern on the target. The system is 7 m long from the ion source to the target and is optimized for the proton beam irradiation. The details of the system development will be described.
authors.affiliation: Proton Engineering Frontier Project, Korea Atomic Energy Research Institute, Yuseong, Daejeon, Korea. bspark@kaeri.re.kr
authors.forename: Bum-Sik
authors.initials: BS
authors.lastname: Park
authors.forename: Yong-Sub
authors.initials: YS
authors.lastname: Cho
authors.forename: In-Seok
authors.initials: IS
authors.lastname: Hong