Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.
Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.
Hong
Woong-Ki
WK
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea.
Sohn
Jung Inn
JI
Hwang
Dae-Kue
DK
Kwon
Soon-Shin
SS
Jo
Gunho
G
Song
Sunghoon
S
Kim
Seong-Min
SM
Ko
Hang-Ju
HJ
Park
Seong-Ju
SJ
Welland
Mark E
ME
Lee
Takhee
T