title: Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas.
abstract: Extreme ultraviolet lithography (EUVL) is considered as the most promising solution at and below dynamic random access memory 32 nm half pitch among the next generation lithography, and EUV light sources with high output power and sufficient lifetime are crucial for the realization of EUVL. However, there is no EUV light source completely meeting the requirements for the commercial application in lithography yet. Therefore, ECR plasma is proposed as a novel concept EUV light source. In order to investigate the feasibility of ECR plasma as a EUV light source, the narrow band EUV power around 13.5 nm emitted by two highly charged ECR ion sources -- LECR2M and SECRAL -- was measured with a calibrated EUV power measurement tool. Since the emission lines around 13.5 nm can be attributed to the 4d-5p transitions of Xe XI or the 4d-4f unresolved transition array of Sn VIII-XIII, xenon plasma was investigated. The dependence of the EUV throughput and the corresponding conversion efficiency on the parameters of the ion source, such as the rf power and the magnetic confinement configurations, were preliminarily studied.
authors.affiliation: Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, PR China.
authors.forename: H Y
authors.initials: HY
authors.lastname: Zhao
authors.forename: H W
authors.initials: HW
authors.lastname: Zhao
authors.forename: L T
authors.initials: LT
authors.lastname: Sun
authors.forename: X Z
authors.initials: XZ
authors.lastname: Zhang
authors.forename: H
authors.initials: H
authors.lastname: Wang
authors.forename: B H
authors.initials: BH
authors.lastname: Ma
authors.forename: X X
authors.initials: XX
authors.lastname: Li
authors.forename: Y H
authors.initials: YH
authors.lastname: Zhu
authors.forename: L S
authors.initials: LS
authors.lastname: Sheng
authors.forename: G B
authors.initials: GB
authors.lastname: Zhang
authors.forename: Y C
authors.initials: YC
authors.lastname: Tian