Thin-film ferroelectrics of PZT of sol-gel processing.
The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4x10(6) V/m and 0.36 C/m(2). The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.
Dey
S K
SK
Dept. of Ceramic Eng., Illinois Univ., Urbana, IL.
Budd
K D
KD
Payne
D A
DA