title: Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.
abstract: Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.
authors.affiliation: Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea.
authors.forename: Woong-Ki
authors.initials: WK
authors.lastname: Hong
authors.forename: Jung Inn
authors.initials: JI
authors.lastname: Sohn
authors.forename: Dae-Kue
authors.initials: DK
authors.lastname: Hwang
authors.forename: Soon-Shin
authors.initials: SS
authors.lastname: Kwon
authors.forename: Gunho
authors.initials: G
authors.lastname: Jo
authors.forename: Sunghoon
authors.initials: S
authors.lastname: Song
authors.forename: Seong-Min
authors.initials: SM
authors.lastname: Kim
authors.forename: Hang-Ju
authors.initials: HJ
authors.lastname: Ko
authors.forename: Seong-Ju
authors.initials: SJ
authors.lastname: Park
authors.forename: Mark E
authors.initials: ME
authors.lastname: Welland
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee