title: Electrical resistivity of tetramethyltetratelluronaphtalene crystal at very high pressures - examination of the condition of metallization of pi molecular crystal.
abstract: Four-probe resistivity measurements were performed on the TMTTeN crystal by using a diamond anvil high-pressure cell up to 30 GPa. The crystal could not be metallized though the room-temperature resistivity decreased to a very small value (1.5 x 10-3 Omega cm). Although single-component molecular metals are composed of molecules, the pressure-induced metallization of a single-component pi molecular crystal while maintaining the initial molecular structure appears to be very difficult.
authors.affiliation: Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan.
authors.forename: HengBo
authors.initials: H
authors.lastname: Cui
authors.forename: Yoshinori
authors.initials: Y
authors.lastname: Okano
authors.forename: Biao
authors.initials: B
authors.lastname: Zhou
authors.forename: Akiko
authors.initials: A
authors.lastname: Kobayashi
authors.forename: Hayao
authors.initials: H
authors.lastname: Kobayashi
mesh_terms: D003460:Crystallization; D018360:Crystallography, X-Ray; D017097:Electric Impedance; D008958:Models, Molecular; D009942:Organometallic Compounds / Q000737:chemistry*; D011312:Pressure; D013691:Tellurium / Q000737:chemistry*; D013696:Temperature
chemical_list: D009942:Organometallic Compounds; C528823:tetramethyltetratelluronaphtalene; D013691:Tellurium