title: Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers.
abstract: A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 microm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.
authors.affiliation: Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, USA. fjin@ece.jhu.edu
authors.forename: F
authors.initials: F
authors.lastname: Jin
authors.forename: J B
authors.initials: JB
authors.lastname: Khurgin
authors.forename: C C
authors.initials: CC
authors.lastname: Wang
authors.forename: S
authors.initials: S
authors.lastname: Trivedi
authors.forename: Y
authors.initials: Y
authors.lastname: Gabay
authors.forename: E
authors.initials: E
authors.lastname: Gad
authors.forename: D A
authors.initials: DA
authors.lastname: Temple
authors.forename: U H
authors.initials: UH
authors.lastname: Hommerich