Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires.
A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1- x Ge x axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.
Clark
Trevor E
TE
Department of Materials Science and Engineering and the Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA.
Nimmatoori
Pramod
P
Lew
Kok-Keong
KK
Pan
Ling
L
Redwing
Joan M
JM
Dickey
Elizabeth C
EC