Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers.
A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 microm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.
Jin
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F
Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, USA. fjin@ece.jhu.edu
Khurgin
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JB
Wang
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Trivedi
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S
Gabay
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Y
Gad
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E
Temple
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Hommerich
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UH