title: High-power diode-pumped AlGaAs surface-emitting laser.
abstract: We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at approximately 870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.
authors.affiliation: Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G4 ONW, UK. m.a.holm@strath.ac.uk
authors.forename: M A
authors.initials: MA
authors.lastname: Holm
authors.forename: D
authors.initials: D
authors.lastname: Burns
authors.forename: P
authors.initials: P
authors.lastname: Cusumano
authors.forename: A I
authors.initials: AI
authors.lastname: Ferguson
authors.forename: M D
authors.initials: MD
authors.lastname: Dawson