title: Deposition at low substrate temperatures of high-quality TiO2 films by radical beam-assisted evaporation.
abstract: We deposited high-quality TiO2 films by an oxygen-radical beam-assisted evaporation (RBE) method at a lower substrate temperature (Ts) than that for a TiO2 film deposited by conventional thermal evaporation (TE) with neutral-oxygen gas. The films were then evaluated in terms of refractive index, shift of wavelength of a peak in the reflection curve, and absorption coefficient. The TiO2 films deposited by RBE at Ts < 473 K showed higher refractive indices, were more compact, and had lower absorption coefficients than the film deposited by TE at Ts = 473 K.
authors.affiliation: Technical Research Institute, Tsukuba Laboratory, Toppan Printing Company, Ltd., 4-2-3 Takanodai-minami, Sugitomachi, Kitakatsushika-gun, Saitama 345-8505, Japan. yasumi.yamada@toppan.co.jp
authors.forename: Y
authors.initials: Y
authors.lastname: Yamada
authors.forename: H
authors.initials: H
authors.lastname: Uyama
authors.forename: S
authors.initials: S
authors.lastname: Watanabe
authors.forename: H
authors.initials: H
authors.lastname: Nozoye