High-power diode-pumped AlGaAs surface-emitting laser.
We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at approximately 870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.
Holm
M A
MA
Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G4 ONW, UK. m.a.holm@strath.ac.uk
Burns
D
D
Cusumano
P
P
Ferguson
A I
AI
Dawson
M D
MD