title: Pyroelectric effect induced by the built-in field of the p-n junction in the quantum paraelectric PbTe: experimental study.
abstract: We report here the first observation of a pyroelectric effect in a nonpolar semiconductor. This effect originates in the temperature-dependent electric dipole of the PbTe p-n junction. The junction was illuminated by a chopped CO(2) laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage, and chopper frequency. The measured pyroelectric coefficient is approximately 10(-3) microC/cm(2) K in the region of 40-80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.
authors: Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel.
authors: A V
authors: AV
authors: Butenko
authors: V
authors: V
authors: Sandomirsky
authors: R
authors: R
authors: Kahatabi
authors: Z
authors: Z
authors: Dashevsky
authors: V
authors: V
authors: Kasiyan
authors: Y
authors: Y
authors: Schlesinger