title: Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography.
abstract: Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively determine the full three-dimensional (3D) composition profiles of single strained SiGe/Si(001) islands. The technique allows us to simultaneously obtain 3D profiles for both coherent and dislocated islands and to collect data with large statistics. Lateral and vertical composition gradients are observed, and their origin is discussed. X-ray scattering measurements performed on a large sample area are used to validate the results.
authors: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany. a.rastelli@ifw-dresden.de
authors: Armando
authors: A
authors: Rastelli
authors: Mathieu
authors: M
authors: Stoffel
authors: Angelo
authors: A
authors: Malachias
authors: Tsvetelina
authors: T
authors: Merdzhanova
authors: Georgios
authors: G
authors: Katsaros
authors: Klaus
authors: K
authors: Kern
authors: Till H
authors: TH
authors: Metzger
authors: Oliver G
authors: OG
authors: Schmidt
mesh_terms: D021621:Imaging, Three-Dimensional / Q000379:methods*; D008422:Materials Testing / Q000379:methods*; D020527:Microscopy, Scanning Probe / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D045663:Quantum Dots; D041622:Tomography, Optical / Q000379:methods*