title: Low-frequency noise in ambipolar carbon nanotube transistors.
abstract: Low-frequency noise measurements on individual single-walled carbon nanotube transistors exhibiting ambipolar characteristics have been carried out. With a polymer electrolyte as gate medium, low-frequency noise can be monitored in both p- and n-channel operation of the same nanotube under the same chemical environment. 1/ f noise in the p-channel of polymer electrolyte gated nanotube transistor is similar to that of back gate operation. However, most devices exhibit significantly larger noise amplitude in the n-channel operation that has a distinct dependence on the threshold voltage. A nonuniform energy distribution of carrier trapping/scattering sites is considered to explain these observations.
authors: Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.
authors: Ju Hee
authors: JH
authors: Back
authors: Sunkook
authors: S
authors: Kim
authors: Saeed
authors: S
authors: Mohammadi
authors: Moonsub
authors: M
authors: Shim