title: High-Average-Power Self-Starting Mode-Locked Ti:sapphire Laser With a Broadband Semiconductor Saturable-Absorber Mirror.
abstract: We present a novel high-power, self-starting mode-locked Ti:sapphire laser with a semiconductor saturable-absorber mirror as the starter element. This laser, whose slope efficiency is 22%, generates pulses with an average power as high as 1.7 W and a pulse width as short as 16 fs. The self-starting process is also investigated.
authors: J
authors: J
authors: Sun
authors: R
authors: R
authors: Zhang
authors: Q
authors: Q
authors: Wang
authors: L
authors: L
authors: Chai
authors: D
authors: D
authors: Pang
authors: J
authors: J
authors: Dai
authors: Z
authors: Z
authors: Zhang
authors: K
authors: K
authors: Torizuka
authors: T
authors: T
authors: Nakagawa
authors: T
authors: T
authors: Sugaya