title: Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces.
abstract: First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2x1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2x1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
authors: Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere, Finland. pekka.laukkanen@utu.fi
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