title: Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode.
abstract: Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation [Zhong-Yi Lu et al, Phys. Rev. Lett. 94, 207210 (2005)]. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.
authors: CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan. niizekit@tcd.ie
authors: Tomohiko
authors: T
authors: Niizeki
authors: Nobuki
authors: N
authors: Tezuka
authors: Koichiro
authors: K
authors: Inomata