title: Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.
abstract: The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
authors: Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom. p.a.hiskett@hw.ac.uk
authors: P A
authors: PA
authors: Hiskett
authors: G S
authors: GS
authors: Buller
authors: A Y
authors: AY
authors: Loudon
authors: J M
authors: JM
authors: Smith
authors: I
authors: I
authors: Gontijo
authors: A C
authors: AC
authors: Walker
authors: P D
authors: PD
authors: Townsend
authors: M J
authors: MJ
authors: Robertson