title: Evidence for strong Breit interaction in dielectronic recombination of highly charged heavy ions.
abstract: Resonant strengths have been measured for dielectronic recombination of Li-like iodine, holmium, and bismuth using an electron beam ion trap. By observing the atomic number dependence of the state-resolved resonant strength, clear experimental evidence has been obtained that the importance of the generalized Breit interaction (GBI) effect on dielectronic recombination increases as the atomic number increases. In particular, it has been shown that the GBI effect is exceptionally strong for the recombination through the resonant state [1s2s(2)2p(1/2)](1).
authors: Institute for Laser Science, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan.
authors: Nobuyuki
authors: N
authors: Nakamura
authors: Anthony P
authors: AP
authors: Kavanagh
authors: Hirofumi
authors: H
authors: Watanabe
authors: Hiroyuki A
authors: HA
authors: Sakaue
authors: Yueming
authors: Y
authors: Li
authors: Daiji
authors: D
authors: Kato
authors: Fred J
authors: FJ
authors: Currell
authors: Shunsuke
authors: S
authors: Ohtani