Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces.
First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2x1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2x1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
Laukkanen
P
P
Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere, Finland. pekka.laukkanen@utu.fi
Punkkinen
M P J
MP
Komsa
H-P
HP
Ahola-Tuomi
M
M
Kokko
K
K
Kuzmin
M
M
Adell
J
J
Sadowski
J
J
Perälä
R E
RE
Ropo
M
M
Rantala
T T
TT
Väyrynen
I J
IJ
Pessa
M
M
Vitos
L
L
Kollár
J
J
Mirbt
S
S
Johansson
B
B