Combinatorial measurements of Hall effect and resistivity in oxide films.
A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect.
Clayhold
J A
JA
Department of Physics, Miami University, Oxford, Ohio 45056, USA.
Kerns
B M
BM
Schroer
M D
MD
Rench
D W
DW
Logvenov
G
G
Bollinger
A T
AT
Bozovic
I
I