title: Mechanism of growth of the Ge wetting layer upon exposure of Si(100)-2 x 1 to GeH4.
abstract: This paper describes the initial reaction kinetics of Ge deposition after exposure of Si(100)-2 x 1 to GeH4 in a UHV-CVD system. The rate of Ge growth, especially at the wetting layer stage, was investigated using in situ X-ray photoelectron spectroscopy to measure the Ge signal at the onset of deposition. A kinetic analysis of the initial growth of the Ge wetting layer at temperatures ranging from 698 to 823 K revealed an activation energy of 30.7 kcal/mol. Density functional theory calculations suggested that opening of the Si dimer--with a closely matching energy barrier of 29.7 kcal/mol, following hydrogen atom migration--was the rate controlling step for the incorporation of a GeH2 unit into the lattice to complete the growth of the Ge wetting layer after dissociative adsorption of GeH4.
authors: Department of Chemical Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Section 4, Taipei, 106, Taiwan.
authors: Chie-Sheng
authors: CS
authors: Liu
authors: Li-Wei
authors: LW
authors: Chou
authors: Lu-Sheng
authors: LS
authors: Hong
authors: Jyh-Chiang
authors: JC
authors: Jiang