Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities.
Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.
Bajoni
Daniele
D
CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France.
Senellart
Pascale
P
Wertz
Esther
E
Sagnes
Isabelle
I
Miard
Audrey
A
Lemaître
Aristide
A
Bloch
Jacqueline
J