title: Electrical properties of self-assembled branched InAs nanowire junctions.
abstract: We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.
authors: Division of Solid State Physics and The Nanometre Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden.
authors: Dmitry B
authors: DB
authors: Suyatin
authors: Jie
authors: J
authors: Sun
authors: Andreas
authors: A
authors: Fuhrer
authors: Daniel
authors: D
authors: Wallin
authors: Linus E
authors: LE
authors: Fröberg
authors: Lisa S
authors: LS
authors: Karlsson
authors: Ivan
authors: I
authors: Maximov
authors: L Reine
authors: LR
authors: Wallenberg
authors: Lars
authors: L
authors: Samuelson
authors: H Q
authors: HQ
authors: Xu