High-Average-Power Self-Starting Mode-Locked Ti:sapphire Laser With a Broadband Semiconductor Saturable-Absorber Mirror.
We present a novel high-power, self-starting mode-locked Ti:sapphire laser with a semiconductor saturable-absorber mirror as the starter element. This laser, whose slope efficiency is 22%, generates pulses with an average power as high as 1.7 W and a pulse width as short as 16 fs. The self-starting process is also investigated.
Sun
J
J
Zhang
R
R
Wang
Q
Q
Chai
L
L
Pang
D
D
Dai
J
J
Zhang
Z
Z
Torizuka
K
K
Nakagawa
T
T
Sugaya
T
T