Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
Hiskett
P A
PA
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom. p.a.hiskett@hw.ac.uk
Buller
G S
GS
Loudon
A Y
AY
Smith
J M
JM
Gontijo
I
I
Walker
A C
AC
Townsend
P D
PD
Robertson
M J
MJ