Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography.
Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively determine the full three-dimensional (3D) composition profiles of single strained SiGe/Si(001) islands. The technique allows us to simultaneously obtain 3D profiles for both coherent and dislocated islands and to collect data with large statistics. Lateral and vertical composition gradients are observed, and their origin is discussed. X-ray scattering measurements performed on a large sample area are used to validate the results.
Rastelli
Armando
A
Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany. a.rastelli@ifw-dresden.de
Stoffel
Mathieu
M
Malachias
Angelo
A
Merdzhanova
Tsvetelina
T
Katsaros
Georgios
G
Kern
Klaus
K
Metzger
Till H
TH
Schmidt
Oliver G
OG
D021621:Imaging, Three-Dimensional / Q000379:methods*; D008422:Materials Testing / Q000379:methods*; D020527:Microscopy, Scanning Probe / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D045663:Quantum Dots; D041622:Tomography, Optical / Q000379:methods*