title: Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities.
abstract: Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.
authors: CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France.
authors: Daniele
authors: D
authors: Bajoni
authors: Pascale
authors: P
authors: Senellart
authors: Esther
authors: E
authors: Wertz
authors: Isabelle
authors: I
authors: Sagnes
authors: Audrey
authors: A
authors: Miard
authors: Aristide
authors: A
authors: Lemaître
authors: Jacqueline
authors: J
authors: Bloch