title: Highly ordered Ga nanodroplets on a GaAs surface formed by a focused ion beam.
abstract: The morphological evolution of a GaAs surface induced by a focused ion beam (FIB) has been investigated by in situ electron microscopy. Under off-normal bombardment without sample rotation, Ga droplets with sizes from 70 to 25 nm in diameter on the GaAs surface can self-assemble into a highly ordered hexagonal pattern instead of Ostwald ripening or coalescence. The mechanism relies on a balance between anisotropic loss of atoms on the surface of droplets due to sputtering and an anisotropic supply of atoms on the substrate surface due to preferential sputtering of As. The ratio of wavelength to the droplet diameter predicted by this model is in excellent agreement with experimental observations.
authors: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
authors: Qiangmin
authors: Q
authors: Wei
authors: Jie
authors: J
authors: Lian
authors: Wei
authors: W
authors: Lu
authors: Lumin
authors: L
authors: Wang