title: Combinatorial measurements of Hall effect and resistivity in oxide films.
abstract: A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect.
authors: Department of Physics, Miami University, Oxford, Ohio 45056, USA.
authors: J A
authors: JA
authors: Clayhold
authors: B M
authors: BM
authors: Kerns
authors: M D
authors: MD
authors: Schroer
authors: D W
authors: DW
authors: Rench
authors: G
authors: G
authors: Logvenov
authors: A T
authors: AT
authors: Bollinger
authors: I
authors: I
authors: Bozovic