title: Self-organization of InAs/InP quantum dot multilayers: pseudophase diagram describing the transition from aligned to antialigned structures.
abstract: Based on experimental observations for the InAs/InP(001) system and atomistic strain calculations using Keating's valence force field method, we propose a pseudophase diagram describing the regimes of 3D self-organization in quantum dot (QD) multilayers. The combined experimental and theoretical analyses--varying the spacer thickness (H), QD height (h), base (b), and lateral spacing (D)--indicate that the vertically aligned to antialigned transition occurs for a critical value of H/D which increases weakly with b/D, while varying h has virtually no effect on the transition point.
authors: Regroupement québécois sur les matériaux de pointe (RQMP) and Département de génie physique, Ecole Polytechnique de Montréal, P.O. Box 6079, Station Centre-Ville, Montréal, QC H3C 3A7 Canada.
authors: A
authors: A
authors: Lévesque
authors: N
authors: N
authors: Shtinkov
authors: R A
authors: RA
authors: Masut
authors: P
authors: P
authors: Desjardins