Flexural phonons in free-standing graphene.
Rotation and reflection symmetries impose that out-of-plane (flexural) phonons of freestanding graphene membranes have a quadratic dispersion at long wavelength and can be excited by charge carriers in pairs only. As a result, we find that flexural phonons dominate the phonon contribution to the resistivity rho below a crossover temperature T(x) where we obtain an anomalous temperature dependence rho proportional, variantT(5/2)lnT. The logarithmic factor arises from renormalizations of the flexural-phonon dispersion due to coupling between bending and stretching degrees of freedom of the membrane.
Mariani
Eros
E
Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany.
von Oppen
Felix
F