Semiconductor line source for low-coherence interferometry.
The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3 mW and a spatially uniform coherence length of 16 mum at a bias current of 86% of threshold (250 mA) at 20 degrees C. The usefulness of the source is verified by measurement of the line profile of a contact lens.
Zvyagin
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Garcia-Webb
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MG
Sampson
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