title: Anomalous hall effect in the (in,mn)sb dilute magnetic semiconductor.
abstract: High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and supports the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.
authors: Department of Physics, Budapest University of Technology and Economics, and Condensed Matter Research Group of the Hungarian Academy of Sciences, 1111 Budapest, Hungary.
authors: G
authors: G
authors: Mihály
authors: M
authors: M
authors: Csontos
authors: S
authors: S
authors: Bordács
authors: I
authors: I
authors: Kézsmárki
authors: T
authors: T
authors: Wojtowicz
authors: X
authors: X
authors: Liu
authors: B
authors: B
authors: Jankó
authors: J K
authors: JK
authors: Furdyna