title: Strain-induced fermi contour anisotropy of GaAs 2D holes.
abstract: We report measurements of magnetoresistance commensurability peaks, induced by a square array of antidots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.
authors: Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
authors: J
authors: J
authors: Shabani
authors: M
authors: M
authors: Shayegan
authors: R
authors: R
authors: Winkler