title: An organic p-type dopant with high thermal stability for an organic semiconductor.
abstract: To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.
authors.affiliation: Centre for Advanced Luminescence Materials, Hong Kong Baptist University, Kowloon, Hong Kong, P. R. China.
authors.forename: Zhi Qiang
authors.initials: ZQ
authors.lastname: Gao
authors.forename: Bao Xiu
authors.initials: BX
authors.lastname: Mi
authors.forename: Gui Zhen
authors.initials: GZ
authors.lastname: Xu
authors.forename: Yi Qian
authors.initials: YQ
authors.lastname: Wan
authors.forename: Meng Lian
authors.initials: ML
authors.lastname: Gong
authors.forename: Kok Wai
authors.initials: KW
authors.lastname: Cheah
authors.forename: Chin H
authors.initials: CH
authors.lastname: Chen