title: Laser produced spectrum of Si(2) molecule in the region of 540-1010 nm.
abstract: The laser produced spectrum of Si(2) molecule is recorded for the first time using laser ablation technique in the region of 540-1010 nm. About 110 bands are observed in the entire spectral region and all these bands are classified into three band systems, viz. E-X, F-X and G-X of Si(2) molecule lying in the region of 814-1010 nm, 630-900 nm and 546-710 nm, respectively. All these electronic transitions take place from ground state X(3)Sigma(g)(-) state. The molecular constants of all these states have been determined.
authors.affiliation: Laser & Spectroscopy Laboratory, Department of Physics, University of Allahabad, Allahabad 211002, India. kspectra12@yahoo.co.in
authors.forename: K S
authors.initials: KS
authors.lastname: Ojha
authors.forename: R
authors.initials: R
authors.lastname: Gopal
mesh_terms: D007834:Lasers; D008956:Models, Chemical; D010782:Photolysis; D011854:Radiochemistry; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*; D013053:Spectrophotometry; D013055:Spectrophotometry, Infrared
chemical_list: D012825:Silicon