title: GaN membrane metal-semiconductor-metal ultraviolet photodetector.
abstract: GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal-semiconductor-metal-type photodetector structure was designed and manufactured on a 2.2 microm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current (30 pA at 3 V) and a maximum responsivity of 14 mA/W at a wavelength of 370 nm were obtained.
authors.affiliation: IMT-Bucharest, Bucharest, Romania.
authors.forename: A
authors.initials: A
authors.lastname: Müller
authors.forename: G
authors.initials: G
authors.lastname: Konstantinidis
authors.forename: M
authors.initials: M
authors.lastname: Dragoman
authors.forename: D
authors.initials: D
authors.lastname: Neculoiu
authors.forename: A
authors.initials: A
authors.lastname: Kostopoulos
authors.forename: M
authors.initials: M
authors.lastname: Androulidaki
authors.forename: M
authors.initials: M
authors.lastname: Kayambaki
authors.forename: D
authors.initials: D
authors.lastname: Vasilache