Nanowire lithography on silicon.
Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices. Planar field-effect transistors made of a single SOI-NW channel exhibit a contact resistance below 20 kOmega and scale with the channel width. Further, we assess the electrical response of NW networks obtained using a mask of SiO2 NWs ink-jetted from solution. The resulting conformal network etched into the underlying wafer is monolithic, with single-crystalline bulk junctions; thus no difference in conductivity is seen between a direct NW bridge and a percolating network. We also extend the potential of NWL into the third dimension, by using a periodic undercutting that produces an array of vertically stacked NWs from a single NW mask.
Colli
Alan
A
Nokia Research Centre Cambridge U.K., c/o Nanoscience Centre, Cambridge CB3 0FF, UK.
Fasoli
Andrea
A
Pisana
Simone
S
Fu
Yongqing
Y
Beecher
Paul
P
Milne
William I
WI
Ferrari
Andrea C
AC
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008904:Miniaturization; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D012822:Silicon Dioxide / Q000737:chemistry*; D014173:Transistors, Electronic
D012822:Silicon Dioxide