Two-dimensional dopant profiling with low-energy SEM.
The scanning electron microscope has proven itself efficient for determining dopant concentrations in semiconductors. Contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, intimate examination shows a low reproducibility of the contrast level for a particular local difference between the doping rates. Data about dynamic behaviour of the dopant contrast and its dependence on the status of the sample surface are presented.
Mika
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Institute of Scientific Instruments ASCR, Brno, Czech Republic. fumici@isibrno.cz
Frank
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