Large anisotropy of electrical properties in layer-structured In2Se3 nanowires.
Layer-structured indium selenide (In 2Se 3) nanowires (NWs) have large anisotropy in both shape and bonding. In 2Se 3 NWs show two types of growth directions: [11-20] along the layers and [0001] perpendicular to the layers. We have developed a powerful technique combining high-resolution transmission electron microscopy (HRTEM) investigation with single NW electrical transport measurement, which allows us to correlate directly the electrical properties and structure of the same individual NWs. The NW devices were made directly on a 50 nm thick SiN x membrane TEM window for electrical measurements and HRTEM study. NWs with the [11-20] growth direction exhibit metallic behavior while the NWs grown along the [0001] direction show n-type semiconductive behavior. Excitingly, the conductivity anisotropy reaches 10 (3)-10 (6) at room temperature, which is 1-3 orders magnitude higher than the bulk ratio.
Peng
Hailin
H
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
Xie
Chong
C
Schoen
David T
DT
Cui
Yi
Y
D016880:Anisotropy; D004553:Electric Conductivity; D004559:Electric Wiring / Q000295:instrumentation*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012643:Selenium / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D007204:Indium; D012643:Selenium