GaN membrane metal-semiconductor-metal ultraviolet photodetector.
GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal-semiconductor-metal-type photodetector structure was designed and manufactured on a 2.2 microm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current (30 pA at 3 V) and a maximum responsivity of 14 mA/W at a wavelength of 370 nm were obtained.
Müller
A
A
IMT-Bucharest, Bucharest, Romania.
Konstantinidis
G
G
Dragoman
M
M
Neculoiu
D
D
Kostopoulos
A
A
Androulidaki
M
M
Kayambaki
M
M
Vasilache
D
D