Laterally graded porous silicon optical filter fabricated by diffusion-limited etch process.
We report a method of producing a lateral gradient in the optical properties of anodically etched porous silicon layers. Lateral gradation details of the porous silicon layer are governed by the etch mask pattern involved. Unlike other methods that rely on uneven hole current distribution, we believe that in our method the diffusion of reactive ions in the etchant plays a key role. As an implementation of the proposed method, we demonstrate a linearly graded optical bandpass filter operating at the lambda=1550 nm range by employing a tapered etch window opening. The resultant optical filter exhibited a approximate 60 nm tuning range with a sharp transmission bandwidth of approximately 3 nm. Computer simulations indicate that an uneven hole current distribution cannot be the reason for the observed gradient along the taper axis, supporting the view that the diffusion-limited etch process plays the key role.
Hwang
Kyungwook
K
Department of Physics and Astronomy and Inter-university Semiconductor Research Center, Seoul National University, Seoul, South Korea.
Kim
Sihan
S
Park
Yeonsang
Y
Jeon
Heonsu
H
Jeong
Jaewook
J