title: Influence of doping rate in Er3+:ZnO films on emission characteristics.
abstract: High-quality Er(3+):ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2 wt. % Er doping. Two peaks were observed at approximately 1.54 microm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er(3+) ions in the form of ErO(6) clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.
authors.affiliation: Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504, USA.
authors.forename: L
authors.initials: L
authors.lastname: Douglas
authors.forename: R
authors.initials: R
authors.lastname: Mundle
authors.forename: R
authors.initials: R
authors.lastname: Konda
authors.forename: C E
authors.initials: CE
authors.lastname: Bonner
authors.forename: A K
authors.initials: AK
authors.lastname: Pradhan
authors.forename: D R
authors.initials: DR
authors.lastname: Sahu
authors.forename: J-L
authors.initials: JL
authors.lastname: Huang