Fabrication of suspended silicon nanowire arrays.
A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.
Lee
Kook-Nyung
KN
Korea Electronics Technology Institute(KETI) #68, Yatap-dong, Bundan-gu, Seongnam-si Gyeonggi-do, 463-816, Korea. plummy@keti.re.kr
Jung
Suk-Won
SW
Shin
Kyu-Sik
KS
Kim
Won-Hyo
WH
Lee
Min-Ho
MH
Seong
Woo-Kyeong
WK
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D012825:Silicon