title: Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions.
abstract: A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm.
authors.affiliation: Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China.
authors.forename: Ting-Kai
authors.initials: TK
authors.lastname: Huang
authors.forename: Ying-Chieh
authors.initials: YC
authors.lastname: Chen
authors.forename: Hsin-Chun
authors.initials: HC
authors.lastname: Ko
authors.forename: Hsin-Wei
authors.initials: HW
authors.lastname: Huang
authors.forename: Chia-Hsin
authors.initials: CH
authors.lastname: Wang
authors.forename: Huang-Kai
authors.initials: HK
authors.lastname: Lin
authors.forename: Fu-Rong
authors.initials: FR
authors.lastname: Chen
authors.forename: Ji-Jung
authors.initials: JJ
authors.lastname: Kai
authors.forename: Chi-Young
authors.initials: CY
authors.lastname: Lee
authors.forename: Hsin-Tien
authors.initials: HT
authors.lastname: Chiu