Novel semiconductor materials for the development of chemical sensors and biosensors: a review.
The aim of this manuscript is to provide a condensed overview of the contribution of certain relatively new semiconductor substrates in the development of chemical and biochemical field effect transistors. The silicon era is initially reviewed providing the background onto which the deployment of the new semiconductor materials for the development of bio-chem-FETs is based on. Subsequently emphasis is given to the selective interaction of novel semiconductor surfaces, including doped conductive diamond, gallium nitride, and indium nitride, with the analyte, and how this interaction can be properly transduced using semiconductor technology. The main advantages and drawbacks of these materials, as well as their future prospects for their applications in the sensor area are also described.
Chaniotakis
Nikos
N
Laboratory of Analytical Chemistry, Department of Chemistry, University of Crete, Voutes 71003 Iraklion, Crete, Greece.
Sofikiti
Nikoletta
N
D015374:Biosensing Techniques / Q000295:instrumentation / Q000639:trends; D018130:Diamond / Q000737:chemistry*; D004566:Electrodes; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D012666:Semiconductors / Q000639:trends; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
D007204:Indium; C473348:gallium nitride; D012822:Silicon Dioxide; D018130:Diamond; D005708:Gallium; C513701:indium nitride