title: Ambipolar, high performance, acene-based organic thin film transistors.
abstract: We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm2/V.s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm2/V.s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.
authors.affiliation: Department of Chemistry, Stanford University, Stanford, California 94305, USA.
authors.forename: Ming L
authors.initials: ML
authors.lastname: Tang
authors.forename: Anna D
authors.initials: AD
authors.lastname: Reichardt
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Miyaki
authors.forename: Randall M
authors.initials: RM
authors.lastname: Stoltenberg
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao