Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions.
A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm.
Huang
Ting-Kai
TK
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China.
Chen
Ying-Chieh
YC
Ko
Hsin-Chun
HC
Huang
Hsin-Wei
HW
Wang
Chia-Hsin
CH
Lin
Huang-Kai
HK
Chen
Fu-Rong
FR
Kai
Ji-Jung
JJ
Lee
Chi-Young
CY
Chiu
Hsin-Tien
HT