Epitaxial growth and band alignment of (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001).
Herein we demonstrate the epitaxial stabilization of single-crystalline (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001) with a controlled lattice match. (Gd(x)La(1-x))(2)O(3) films have an in-plane epitaxial relationship with a twofold rotation on GaAs (001). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (Gd(x)La(1-x))(2)O(3) film is approximately approximately 5.8eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (Gd(x)La(1-x))(2)O(3) film (x=0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.
Yang
Jun-Kyu
JK
School of Advanced Materials Science and Engineering, Yonsei University, 134 Sinchon-dong, Seodaemun-ku, Seoul 120-749, Republic of Korea.
Choi
Sun Gyu
SG
Park
Hyung-Ho
HH