title: Indium induced band gap tailoring in AgGa(1-x)In(x)S(2) chalcopyrite structure for visible light photocatalysis.
abstract: Indium was substituted at gallium site in chalcopyrite AgGaS(2) structure by using a simple solid solution method. The spectroscopic analysis using extended x-ray absorption fine structure and x-ray photoelectron spectroscopy confirmed the indium substitution in AgGaS(2) lattice. The band gap energy of AgGa(1-x)In(x)S(2) (x=0-1) estimated from the onset of absorption edge was found to be reduced from 2.67 eV (x=0) to 1.9 eV (x=1) by indium substitution. The theoretical and experimental studies showed that the indium s orbitals in AgGa(1-x)In(x)S(2) tailored the band gap energy, thereby modified the photocatalytic activity of the AgGa(1-x)In(x)S(2).
authors.affiliation: Eco-Friendly Catalysis and Energy Laboratory (NRL), Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
authors.forename: Jum Suk
authors.initials: JS
authors.lastname: Jang
authors.forename: Pramod H
authors.initials: PH
authors.lastname: Borse
authors.forename: Jae Sung
authors.initials: JS
authors.lastname: Lee
authors.forename: Sun Hee
authors.initials: SH
authors.lastname: Choi
authors.forename: Hyun Gyu
authors.initials: HG
authors.lastname: Kim