title: Fabrication of suspended silicon nanowire arrays.
abstract: A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.
authors.affiliation: Korea Electronics Technology Institute(KETI) #68, Yatap-dong, Bundan-gu, Seongnam-si Gyeonggi-do, 463-816, Korea. plummy@keti.re.kr
authors.forename: Kook-Nyung
authors.initials: KN
authors.lastname: Lee
authors.forename: Suk-Won
authors.initials: SW
authors.lastname: Jung
authors.forename: Kyu-Sik
authors.initials: KS
authors.lastname: Shin
authors.forename: Won-Hyo
authors.initials: WH
authors.lastname: Kim
authors.forename: Min-Ho
authors.initials: MH
authors.lastname: Lee
authors.forename: Woo-Kyeong
authors.initials: WK
authors.lastname: Seong
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances; D012825:Silicon