Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.
We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.
Zimmler
Mariano A
MA
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.
Stichtenoth
Daniel
D
Ronning
Carsten
C
Yi
Wei
W
Narayanamurti
Venkatesh
V
Voss
Tobias
T
Capasso
Federico
F
D003460:Crystallization / Q000379:methods; D004581:Electronics / Q000295:instrumentation*; D005898:Glass / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D010777:Photochemistry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
D046911:Macromolecular Substances; D015034:Zinc Oxide; D012825:Silicon