title: Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals.
abstract: Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and different Si2O2 or Si3N4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V were obtained for pulse amplitudes of +/-9 V and +/-10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value.
authors.affiliation: Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, P.O. Box 49, H-1525, Hungary.
authors.forename: Z J
authors.initials: ZJ
authors.lastname: Horváth
authors.forename: P
authors.initials: P
authors.lastname: Basa
authors.forename: T
authors.initials: T
authors.lastname: Jászi
authors.forename: A E
authors.initials: AE
authors.lastname: Pap
authors.forename: L
authors.initials: L
authors.lastname: Dobos
authors.forename: B
authors.initials: B
authors.lastname: Pécz
authors.forename: L
authors.initials: L
authors.lastname: Tóth
authors.forename: P
authors.initials: P
authors.lastname: Szöllosi
authors.forename: K
authors.initials: K
authors.lastname: Nagy