title: Electronic properties of semiconductor nanowires.
abstract: This paper provides a review of the state-of-the-art electronic-structure calculations of semiconductor nanowires. Results obtained using empirical k.p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods are compared. For conciseness, we will restrict our detailed discussions to free-standing plain and modulated nanowires. Connections to relevant experimental data, particularly band gaps and polarization anisotropy, will be made since these results depend crucially on the electronic properties. For completeness, a brief review on the synthesis of nanowires is included.
authors.affiliation: Department of Physics, Wright State University 3640 Colonel Glenn Hwy, Dayton, Ohio 45435, USA.
authors.forename: L C
authors.initials: LC
authors.lastname: Lew Yan Voon
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhang
authors.forename: B
authors.initials: B
authors.lastname: Lassen
authors.forename: M
authors.initials: M
authors.lastname: Willatzen
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong
authors.forename: P C
authors.initials: PC
authors.lastname: Eklund