Single- and two-photon excitation of a GaAs random laser.
We have demonstrated an anti-Stokes random laser emission at lambda approximately 885 nm in micrometer-size powder of GaAs. The maximal pumping wavelength, lambda=1,300 nm, exceeded the lasing wavelength by nearly 50%. We conclude that both one- and two-photon pumping contribute to optical excitation of the material, with the two-photon pumping being a key process in creating the population inversion and gain.
Zhu
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Center for Materials Research, Norfolk State University, Norfolk, Virginia 23504, USA.
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Noginov
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