SiGe nanowire field effect transistors.
Si0.5Geo0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V(-1)s(-1). Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V(-1)s(-1).
Qi
Cheng
C
Department of Electrical and Computer Engineering, Portland State University, Portland, OR 97201, USA.
Rangineni
Yaswanth
Y
Goncher
Gary
G
Solanki
Raj
R
Langworthy
Kurt
K
Jordan
Jay
J