title: Nanostructure assembly of indium sulphide quantum dots and their characterization.
abstract: Nanocrystals (approximately 5 nm) of the semiconducting wide band gap material beta-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of beta-In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of beta-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.
authors.affiliation: Materials Science Center Department of Nuclear Physics, University of Madras, Chennai 600025, India.
authors.forename: B
authors.initials: B
authors.lastname: Vigneashwari
authors.forename: V
authors.initials: V
authors.lastname: Ravichandran
authors.forename: P
authors.initials: P
authors.lastname: Parameswaran
authors.forename: S
authors.initials: S
authors.lastname: Dash
authors.forename: A K
authors.initials: AK
authors.lastname: Tyagi
mesh_terms: D003460:Crystallization; D007204:Indium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D045663:Quantum Dots; D014961:X-Ray Diffraction / Q000379:methods
chemical_list: D007204:Indium