High reflectivity multilayer for He-II radiation at 30.4 nm.
SiC/Mg and B(4)C/Mo/Si multilayers were designed for He-II radiation at 30.4 nm. These multilayers were prepared by use of a direct current magnetron sputtering system and measured at the National Synchrotron Radiation Laboratory, China. The measured reflectivities were 38.0% for the SiC/Mg multilayer at an incident angle of 12 deg and 32.5% for the B(4)C/Mo/Si multilayer at 5 deg, respectively. A dual-function multilayer mirror was also designed by use of the aperiodic SiC/Mg multilayer. Annealing experiments were performed to investigate the thermal stability of the SiC/Mg multilayer. The interface of the SiC/Mg multilayer before and after annealing was studied by electron-induced x-ray emission spectra, which evidences the absence of thermal reaction products at the interfaces after annealing.
Zhu
Jingtao
J
Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China.
Wang
Zhanshan
Z
Zhang
Zhong
Z
Wang
Fengli
F
Wang
Hongchang
H
Wu
Wenjuan
W
Zhang
Shumin
S
Xu
Da
D
Chen
Lingyan
L
Zhou
Hongjun
H
Huo
Tonglin
T
Cui
Mingqi
M
Zhao
Yidong
Y