title: SiGe nanowire field effect transistors.
abstract: Si0.5Geo0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V(-1)s(-1). Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V(-1)s(-1).
authors.affiliation: Department of Electrical and Computer Engineering, Portland State University, Portland, OR 97201, USA.
authors.forename: Cheng
authors.initials: C
authors.lastname: Qi
authors.forename: Yaswanth
authors.initials: Y
authors.lastname: Rangineni
authors.forename: Gary
authors.initials: G
authors.lastname: Goncher
authors.forename: Raj
authors.initials: R
authors.lastname: Solanki
authors.forename: Kurt
authors.initials: K
authors.lastname: Langworthy
authors.forename: Jay
authors.initials: J
authors.lastname: Jordan