title: GaN, ZnO and InN nanowires and devices.
abstract: A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.
authors.affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, USA.
authors.forename: S J
authors.initials: SJ
authors.lastname: Pearton
authors.forename: B S
authors.initials: BS
authors.lastname: Kang
authors.forename: B P
authors.initials: BP
authors.lastname: Gila
authors.forename: D P
authors.initials: DP
authors.lastname: Norton
authors.forename: O
authors.initials: O
authors.lastname: Kryliouk
authors.forename: F
authors.initials: F
authors.lastname: Ren
authors.forename: Young-Woo
authors.initials: YW
authors.lastname: Heo
authors.forename: Chih-Yang
authors.initials: CY
authors.lastname: Chang
authors.forename: Gou-Chung
authors.initials: GC
authors.lastname: Chi
authors.forename: Wei-Ming
authors.initials: WM
authors.lastname: Wang
authors.forename: Li-Chyong
authors.initials: LC
authors.lastname: Chen