Examining the anomalous electrical characteristics observed in InN nanowires.
Research interest in InN has intensified in recent years because of its unique material properties and promising applications in electronic and photonic devices. Measurements on InN nanowires presented by Chang et al., [J. Electron. Mater. 35, 738 (2006)] showed an anomalous resistance behavior in InN nanowires with diameters less than 90 nm. We examine possible theories presented in literature to explain this intriguing observation. We propose that the presence of a high density electron accumulation layer at the surface of thin InN nanowires is the most probable cause for the uncharacteristic relationship between the total measured resistance and the ratio of length-to-area. High density surface electron accumulation layer, characteristic of InN films and nanowire, promotes a surface conduction path distinct from the bulk conduction. For large diameter nanowires, bulk conduction is likely to be the dominant mechanism while surface conduction is proposed to play a major role for small diameter InN nanowires.
Chaudhry
Anurag
A
Integrated Nanodevices and System Research, Department of Electrical and Computer Engineering, University of California, Davis, CA 95616, USA.
Islam
M Saif
MS