title: Characterization of implantation induced defects in Si-implanted SiO2 film.
abstract: Si-implanted thermal SiO2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation region of the SiO2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO2 network structure. The presence of blue band emission (430-470 nm) in the implanted SiO2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover the pre-implantation condition after a thermal treatment.
authors.affiliation: Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Xiaopeng
authors.initials: X
authors.lastname: Hao
authors.forename: Chunlan
authors.initials: C
authors.lastname: Zhou
authors.forename: Runsheng
authors.initials: R
authors.lastname: Yu
authors.forename: Baoyi
authors.initials: B
authors.lastname: Wang
authors.forename: Long
authors.initials: L
authors.lastname: Wei