title: Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films.
abstract: A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 for MgF(2), 1.43 for CaF(2), and 1.57-1.61 for LaF(3) films are obtained.
authors.affiliation: Department of Chemistry, P.O. Box 55, University of Helsinki, FI-00014 Helsinki, Finland. Tero.Pilvi@helsinki.fi
authors.forename: Tero
authors.initials: T
authors.lastname: Pilvi
authors.forename: Mikko
authors.initials: M
authors.lastname: Ritala
authors.forename: Markku
authors.initials: M
authors.lastname: Leskelä
authors.forename: Martin
authors.initials: M
authors.lastname: Bischoff
authors.forename: Ute
authors.initials: U
authors.lastname: Kaiser
authors.forename: Norbert
authors.initials: N
authors.lastname: Kaiser