title: High reflectivity multilayer for He-II radiation at 30.4 nm.
abstract: SiC/Mg and B(4)C/Mo/Si multilayers were designed for He-II radiation at 30.4 nm. These multilayers were prepared by use of a direct current magnetron sputtering system and measured at the National Synchrotron Radiation Laboratory, China. The measured reflectivities were 38.0% for the SiC/Mg multilayer at an incident angle of 12 deg and 32.5% for the B(4)C/Mo/Si multilayer at 5 deg, respectively. A dual-function multilayer mirror was also designed by use of the aperiodic SiC/Mg multilayer. Annealing experiments were performed to investigate the thermal stability of the SiC/Mg multilayer. The interface of the SiC/Mg multilayer before and after annealing was studied by electron-induced x-ray emission spectra, which evidences the absence of thermal reaction products at the interfaces after annealing.
authors.affiliation: Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China.
authors.forename: Jingtao
authors.initials: J
authors.lastname: Zhu
authors.forename: Zhanshan
authors.initials: Z
authors.lastname: Wang
authors.forename: Zhong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Fengli
authors.initials: F
authors.lastname: Wang
authors.forename: Hongchang
authors.initials: H
authors.lastname: Wang
authors.forename: Wenjuan
authors.initials: W
authors.lastname: Wu
authors.forename: Shumin
authors.initials: S
authors.lastname: Zhang
authors.forename: Da
authors.initials: D
authors.lastname: Xu
authors.forename: Lingyan
authors.initials: L
authors.lastname: Chen
authors.forename: Hongjun
authors.initials: H
authors.lastname: Zhou
authors.forename: Tonglin
authors.initials: T
authors.lastname: Huo
authors.forename: Mingqi
authors.initials: M
authors.lastname: Cui
authors.forename: Yidong
authors.initials: Y
authors.lastname: Zhao