Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films.
A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 for MgF(2), 1.43 for CaF(2), and 1.57-1.61 for LaF(3) films are obtained.
Pilvi
Tero
T
Department of Chemistry, P.O. Box 55, University of Helsinki, FI-00014 Helsinki, Finland. Tero.Pilvi@helsinki.fi
Ritala
Mikko
M
Leskelä
Markku
M
Bischoff
Martin
M
Kaiser
Ute
U
Kaiser
Norbert
N