title: Disorder dominated microwave conductance spectra of doped silicon nanowire arrays.
abstract: Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10(4) SiNWs, the conductance was found to increase with frequency as f(s), with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.
authors.affiliation: Sandia National Laboratories, Albuquerque, NM 87185, USA. chighst@sandia.gov
authors.forename: Clark
authors.initials: C
authors.lastname: Highstrete
authors.forename: Mark
authors.initials: M
authors.lastname: Lee
authors.forename: Aaron L
authors.initials: AL
authors.lastname: Vallett
authors.forename: Sarah M
authors.initials: SM
authors.lastname: Eichfeld
authors.forename: Joan M
authors.initials: JM
authors.lastname: Redwing
authors.forename: Theresa S
authors.initials: TS
authors.lastname: Mayer
mesh_terms: D003198:Computer Simulation; D004553:Electric Conductivity; D008422:Materials Testing; D008872:Microwaves; D008956:Models, Chemical; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon