title: Single- and two-photon excitation of a GaAs random laser.
abstract: We have demonstrated an anti-Stokes random laser emission at lambda approximately 885 nm in micrometer-size powder of GaAs. The maximal pumping wavelength, lambda=1,300 nm, exceeded the lasing wavelength by nearly 50%. We conclude that both one- and two-photon pumping contribute to optical excitation of the material, with the two-photon pumping being a key process in creating the population inversion and gain.
authors.affiliation: Center for Materials Research, Norfolk State University, Norfolk, Virginia 23504, USA.
authors.forename: G
authors.initials: G
authors.lastname: Zhu
authors.forename: C E
authors.initials: CE
authors.lastname: Small
authors.forename: M A
authors.initials: MA
authors.lastname: Noginov