Graphene-metal interface: two-terminal resistance of low-mobility graphene in high magnetic fields.
The two-terminal magnetotransport of a single graphene layer was investigated up to a field of 55 T. The dependence of the electron transmission probability at the organo-metallic interface between the graphene and the metal electrodes was studied as a function of filling factor and electron density. A resistance-plateau spanning several tens of tesla width was observed. We argue that this plateau originates from an augmented sublattice spin-splitting due to the high surface-impurity concentration of the graphene layer. At electron densities close to the Dirac point, fingerprints of a thermally activated energy gap were observed.
Krstić
Vojislav
V
Centre for Research of Adaptive Nanostructures and Nanodevices, School of Physics, Trinity College Dublin, Dublin 2, Ireland. krsticv@tcd.ie
Obergfell
Dirk
D
Hansel
Stefan
S
Rikken
Geert L J A
GL
Blokland
Janneke H
JH
Ferreira
Mauro S
MS
Roth
Siegmar
S
D017097:Electric Impedance; D004574:Electromagnetic Fields; D004583:Electrons; D006108:Graphite / Q000737:chemistry* / Q000528:radiation effects; D008670:Metals / Q000737:chemistry* / Q000528:radiation effects; D008839:Microelectrodes
D008670:Metals; D006108:Graphite