title: Graphene-metal interface: two-terminal resistance of low-mobility graphene in high magnetic fields.
abstract: The two-terminal magnetotransport of a single graphene layer was investigated up to a field of 55 T. The dependence of the electron transmission probability at the organo-metallic interface between the graphene and the metal electrodes was studied as a function of filling factor and electron density. A resistance-plateau spanning several tens of tesla width was observed. We argue that this plateau originates from an augmented sublattice spin-splitting due to the high surface-impurity concentration of the graphene layer. At electron densities close to the Dirac point, fingerprints of a thermally activated energy gap were observed.
authors.affiliation: Centre for Research of Adaptive Nanostructures and Nanodevices, School of Physics, Trinity College Dublin, Dublin 2, Ireland. krsticv@tcd.ie
authors.forename: Vojislav
authors.initials: V
authors.lastname: Krstić
authors.forename: Dirk
authors.initials: D
authors.lastname: Obergfell
authors.forename: Stefan
authors.initials: S
authors.lastname: Hansel
authors.forename: Geert L J A
authors.initials: GL
authors.lastname: Rikken
authors.forename: Janneke H
authors.initials: JH
authors.lastname: Blokland
authors.forename: Mauro S
authors.initials: MS
authors.lastname: Ferreira
authors.forename: Siegmar
authors.initials: S
authors.lastname: Roth
mesh_terms: D017097:Electric Impedance; D004574:Electromagnetic Fields; D004583:Electrons; D006108:Graphite / Q000737:chemistry* / Q000528:radiation effects; D008670:Metals / Q000737:chemistry* / Q000528:radiation effects; D008839:Microelectrodes
chemical_list: D008670:Metals; D006108:Graphite