Heat- and electron-beam-induced transport of gold particles into silicon oxide and silicon studied by in situ high-resolution transmission electron microscopy.
In this study, we describe the transport of gold (Au) nanoparticles from the surface into crystalline silicon (Si) covered by silicon oxide (SiO(2)) as revealed by in situ high-resolution transmission electron microscopy. Complete crystalline Au nanoparticles sink through the SiO(2) layer into the Si substrate when high-dose electron irradiation is applied and temperature is raised above 150 degrees C. Above temperatures of 250 degrees C, the Au nanoparticles finally dissolve into fragments accompanied by crystallization of the amorphized Si substrate around these fragments. The transport process is explained by a wetting process followed by Stokes motion. Modelling this process yields boundaries for the interface energies involved.
Biskupek
Johannes
J
Electron Microscopy Group of Materials Science, University of Ulm, D-89081 Ulm, Germany. johannes.biskupek@uni-ulm.de
Kaiser
Ute
U
Falk
Fritz
F
D004583:Electrons; D006046:Gold / Q000737:chemistry*; D006358:Hot Temperature; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D053758:Nanoparticles / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
D006046:Gold; D012822:Silicon Dioxide