Tailoring the ultrathin Al-induced crystallization temperature of amorphous si by application of interface thermodynamics.
It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si. The effect has been explained quantitatively by application of surface-interface thermodynamics. The predictions have been confirmed experimentally by a real-time in situ spectroscopic ellipsometry investigation of the crystallization temperature of a-Si as a function of the thickness of ultrathin Al layers.
Max Planck Institute for Metals Research, Heisenbergstrasse 3, D-70569 Stuttgart, Germany.
Z M
ZM
Wang
J Y
JY
Wang
L P H
LP
Jeurgens
E J
EJ
Mittemeijer