Kinetics and morphological instabilities of stressed solid-solid phase transformations.
An atomistic model of the growth kinetics of stressed solid-solid phase transformations is presented. Solid phase epitaxial growth of (001) Si was used for comparison of new and prior models with experiments. The results indicate that the migration of crystal island ledges in the growth interface may involve coordinated atomic motion. The model accounts for morphological instabilities during stressed solid-solid phase transformations.
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA. ngr@ufl.edu
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Rudawski
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Jones
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Gwilliam