Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires.
Stoica
Toma
T
Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology Research Centre, Jülich GmbH, 52425 Jülich, Germany.
Sutter
Eli
E
Meijers
Ralph J
RJ
Debnath
Ratan K
RK
Calarco
Raffaella
R
Lüth
Hans
H
Grützmacher
Detlev
D
D002384:Catalysis; D005708:Gallium / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission
C473348:gallium nitride; D005708:Gallium