Shot noise in graphene.
We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theories for shot noise in ballistic and disordered graphene.
Department of Physics, Harvard University, Cambridge, MA 02138, USA.
L
L
Dicarlo
J R
JR
Williams
Yiming
Y
Zhang
D T
DT
McClure
C M
CM
Marcus