1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.
Using a multi section laser in coupled cavity injection grating design based on 1.3 microm InGaAs/GaAs quantum dot (QD) active region we were able to enhance the 3 dB modulation bandwidth well beyond the inherent material modulation bandwidth. The material bandwidth was determined by measurements on distributed feedback (DFB) devices to approximately 8 GHz. The special multisectional design allows interaction between the lasing mode and a second mode used as catalyst and enables a high resonance frequency of the device. Based on active QD material this approach allowed us to reach a cut off frequency of 20 GHz in the small signal response of the device.
Gerschütz
F
F
nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, Germany. florian.gerschuetz@nanoplus.com
Fischer
M
M
Koeth
J
J
Krestnikov
I
I
Kovsh
A
A
Schilling
C
C
Kaiser
W
W
Höfling
S
S
Forchel
A
A
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D008962:Models, Theoretical; D045663:Quantum Dots; D011789:Quantum Theory; D012031:Refractometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide