Electrical and optical transport of GaAs/carbon nanotube heterojunctions.
Heterojunctions consisting of nanotubes and an industrialized semiconductor-GaAs have been produced, and their transport properties were studied. We found that the p-doped GaAs forms an ohmic contact with a nanotube but the n-doped GaAs/nanotube heterojunction is rectifying. Analysis of measurement results at various temperatures shows that tunneling transport plays an important role. We also observed photovoltaic effects in n-GaAs/nanotube junction with the illumination of a green laser or desk lamp.
Liang
Chen-Wei
CW
Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany. cw.liang@fkf.mpg.de
Roth
Siegmar
S
D001152:Arsenicals / Q000737:chemistry*; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure
D001152:Arsenicals; D037742:Nanotubes, Carbon; C043055:gallium arsenide; D005708:Gallium