Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators.
We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation with doping concentration is explored and found to be important for the modulator characteristics.
Zhou
Gui-Rong
GR
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. guirong@mit.edu
Geis
Michael W
MW
Spector
Steven J
SJ
Gan
Fuwan
F
Grein
Matthew E
ME
Schulein
Robert T
RT
Orcutt
Jason S
JS
Yoon
Jung U
JU
Lennon
Donna M
DM
Lyszczarz
Theodore M
TM
Ippen
Erich P
EP
Käertner
Franz X
FX
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
D012825:Silicon