Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.
The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.
Yang
Jun
J
Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA. junyang@umich.edu
Bhattacharya
Pallab
P
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005336:Fiber Optic Technology / Q000295:instrumentation*; D005708:Gallium / Q000737:chemistry*; D006859:Hydrogen / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D006859:Hydrogen; D005708:Gallium; C076773:indium arsenide; D012825:Silicon