Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities.
We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.
Tawara
T
T
NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan. tawara@nttbrl.jp
Kamada
H
H
Zhang
Y-H
YH
Tanabe
T
T
Cade
N I
NI
Ding
D
D
Johnson
S R
SR
Gotoh
H
H
Kuramochi
E
E
Notomi
M
M
Sogawa
T
T
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D036103:Nanotechnology / Q000295:instrumentation*; D017785:Photons; D011786:Quality Control; D045663:Quantum Dots; D013696:Temperature
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide