Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM.
Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.
Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Wuppertal, Germany.
Anton
A
Pugatschow
Ralf
R
Heiderhoff
Ludwig J
LJ
Balk