Optical and electrical properties of Vanadium doped Indium oxide thin films.
A new transparent conducting indium vanadium oxide (IVO) thin film is developed by using a modification-specific reactive thermal coevaporation method. Electrical and optical characteristics of IVO films were studied with different vanadium doping concentration, which shows good optical transmittance in the visible spectra range and a minimum electrical resistivity of 7.95 x 10(-4) Omega.cm corresponding to a carrier density of 2.28 x 10(20) cm(-3) and a Hall mobility of 34.5 cm(2) V(-1) s(-1), respectively. Using IVO film as the anode, OLED shows a reduced turn-on voltage and significantly enhanced luminance and electroluminescence efficiency with respect to the device with an ITO anode. Our results indicate that IVO is a promising transparent conducting oxide material, and a suitable electrical contact for hole injection in OLEDs.
Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P.R. China.
Huibin
H
Li
Ning
N
Wang
Xingyuan
X
Liu
D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation* / Q000379:methods; D008567:Membranes, Artificial; D055095:Optics and Photonics / Q000295:instrumentation*; D014639:Vanadium / Q000737:chemistry*
D008567:Membranes, Artificial; D014639:Vanadium; D007204:Indium; C047711:indium oxide