Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process.
The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 nm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 microm.
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK. ziyang.zhang@shef.ac.uk
Z Y
ZY
Zhang
R A
RA
Hogg
B
B
Xu
P
P
Jin
Z G
ZG
Wang