290-fs pulses from a semiconductor disk laser.
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.
Max-Born-Institute, Max-Born-Strasse 2A, D-12489 Berlin, Germany.
Peter
P
Klopp
Florian
F
Saas
Martin
M
Zorn
Markus
M
Weyers
Uwe
U
Griebner
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor; D007909:Lenses; D008962:Models, Theoretical; D009991:Oscillometry / Q000295:instrumentation* / Q000379:methods; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*