Twofold co-ordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2.
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern writing through ionizing radiation.
Department of Physical and Astronomical Sciences, University of Palermo, Via Archirafi 36, I-90123 Palermo, Italy. alessi@fisica.unipa.it
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Alessi
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Agnello
F M
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Gelardi
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Grandi
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Magistris
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Boscaino
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005336:Fiber Optic Technology / Q000295:instrumentation*; D005720:Gamma Rays; D005857:Germanium / Q000737:chemistry* / Q000528:radiation effects*; D008029:Lighting / Q000295:instrumentation*; D008962:Models, Theoretical; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects*
D005857:Germanium; D012822:Silicon Dioxide