Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators.
We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation with doping concentration is explored and found to be important for the modulator characteristics.
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. guirong@mit.edu
Gui-Rong
GR
Zhou
Michael W
MW
Geis
Steven J
SJ
Spector
Fuwan
F
Gan
Matthew E
ME
Grein
Robert T
RT
Schulein
Jason S
JS
Orcutt
Jung U
JU
Yoon
Donna M
DM
Lennon
Theodore M
TM
Lyszczarz
Erich P
EP
Ippen
Franz X
FX
Käertner
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
D012825:Silicon