Electro-optic and electro-absorption characterization of InAs quantum dot waveguides.
Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm.
Akca
Imran B
IB
Materials Science and Nanotechnology Program, Physics Department, Bilkent University, 06800, Ankara, Turkey. imran@bilkent.edu.tr
Dana
Aykutlu
A
Aydinli
Atilla
A
Rossetti
Marco
M
Li
Lianhe
L
Fiore
Andrea
A
Dagli
Nadir
N
D001152:Arsenicals / Q000737:chemistry*; D004581:Electronics / Q000295:instrumentation*; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D008027:Light; D055095:Optics and Photonics / Q000295:instrumentation*; D045663:Quantum Dots; D012542:Scattering, Radiation
D001152:Arsenicals; D007204:Indium; C076773:indium arsenide