The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China.
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Xiao
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Wang
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Zhao
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Gu
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Xia
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Wang
D003035:Cobalt / Q000737:chemistry* / Q000528:radiation effects; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008567:Membranes, Artificial; D010783:Photometry / Q000295:instrumentation* / Q000379:methods; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D014159:Transducers
D008567:Membranes, Artificial; D003035:Cobalt; D012822:Silicon Dioxide; D012825:Silicon