Ultra high-Q photonic crystal nanocavity design: the effect of a low-epsilon slab material.
We analyze the influence of the dielectric constant of the slab on the quality factor (Q) in slab photonic crystal cavities with a minimized vertical losses model. The higher value of Q in high-epsilon cavity is attributed to the lower mode frequency. The Q ratio in a high-epsilon (silicon) vs. low-epsilon (diamond) slab is examined as a function of mode volume (V(m)). The mode volume compensation technique is discussed. Finally, diamond cavity design is addressed. The analytical results are compared to 3D FDTD calculations. In a double heterostructure design, a Q approximately 2.6 x 10(5) is obtained. The highest Q approximately 1.3 x 10(6) with V(m)=1.77 x (lambda/n)(3) in a local width modulation design is derived.
Bayn
Igal
I
Department of Electrical Engineering and Microelectronics Research Center, Technion Haifa 32000, Israel. eebayn@techunix.technion.ac.il
Salzman
Joseph
J
D003198:Computer Simulation; D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D020342:Finite Element Analysis; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D017785:Photons; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D014159:Transducers; D014732:Vibration