Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures.
We report on the fabrication of high-efficiency vertical-injection GaN-based light-emitting diodes (LEDs) fabricated with integrated surface textures. An optical ray-tracing simulation shows that the high integration of surface textures can effectively enhance the light-extraction efficiency. The integrated surface textures are fabricated on the top surface of LEDs by generating hexagonal cones on the periodically corrugated surfaces of n-GaN. Compared to reference LEDs without textures, LEDs fabricated with integrated surface textures show an enhancement of the output power by a factor of 2.59, which is in agreement with the calculated results.
Kim
H
H
Opto System Laboratory, Samsung Electro-Mechanics Co, Suwon, Korea. hstheory@gmail.com
Choi
K-K
KK
Kim
K-K
KK
Cho
J
J
Lee
S-N
SN
Park
Y
Y
Kwak
J S
JS
Seong
T-Y
TY