Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
CEA-CNRS group "Nanophysique et Semiconducteurs", INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France. julien.renard@cea.fr
Julien
J
Renard
Rudeesun
R
Songmuang
Catherine
C
Bougerol
Bruno
B
Daudin
Bruno
B
Gayral
D017607:Aluminum Compounds / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D045663:Quantum Dots; D013057:Spectrum Analysis
D017607:Aluminum Compounds; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium