Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
Renard
Julien
J
CEA-CNRS group "Nanophysique et Semiconducteurs", INAC/SP2M,17 rue des Martyrs 38054 Grenoble Cedex 9, France. julien.renard@cea.fr
Songmuang
Rudeesun
R
Bougerol
Catherine
C
Daudin
Bruno
B
Gayral
Bruno
B
D017607:Aluminum Compounds / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D045663:Quantum Dots; D013057:Spectrum Analysis
D017607:Aluminum Compounds; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium