Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence.
Silicon light source plays a key role in silicon optoelectronics, but its realization is an extremely challenging task. Although there are longterm intensive efforts to this topic, the power conversion efficiency (PCE) of the silicon-based electroluminescence is still no more than 1%. In this present report, a highly efficient silicon light source has been achieved. The device structure is p-Si (5 Omegacm)/ SiO2(approximately 2 nm)/ NPB / CBP: (ppy)(2)Ir(acac) / Bphen /Bphen: Cs2CO3 / Sm / Au. The SiO2 passivated Si is the anode having a suitably high hole-injection ability, and CBP: (ppy)(2)Ir(acac) is a highly efficient phosphor doped organic material. The device turn-on voltage is 3.2 V. The maximum luminance efficiency and maximum luminous power efficiency reach 69 cd/A and 62 lm/W, respectively, corresponding to a maximum PCE of 12% and an external quantum efficiency of 17%.
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
W Q
WQ
Zhao
G Z
GZ
Ran
Z W
ZW
Liu
Z Q
ZQ
Bian
K
K
Sun
W J
WJ
Xu
C H
CH
Huang
G G
GG
Qin
D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation*; D009930:Organic Chemicals / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D009930:Organic Chemicals; D012825:Silicon