Spin echoes in the charge transport through phosphorus donors in silicon.
The electrical detection of spin echoes via echo tomography is used to observe coherent processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO2 interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of 1.7+/-0.2 micros is observed and discussed in terms of decoherence and recombination times. Electrical spin echo tomography thus can be used to study the dynamics of the spin-dependent transport processes, e.g., in realistic spin qubit devices for quantum information processing.
Huebl
Hans
H
Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany. hans.huebl@unsw.edu.au
Hoehne
Felix
F
Grolik
Benno
B
Stegner
Andre R
AR
Stutzmann
Martin
M
Brandt
Martin S
MS