Electronic shot noise in fractal conductors.
By solving a master equation in the Sierpiński lattice and in a planar random-resistor network, we determine the scaling with size L of the shot noise power P due to elastic scattering in a fractal conductor. We find a power-law scaling P proportional, variantL;{d_{f}-2-alpha}, with an exponent depending on the fractal dimension d_{f} and the anomalous diffusion exponent alpha. This is the same scaling as the time-averaged current I[over ], which implies that the Fano factor F=P/2eI[over ] is scale-independent. We obtain a value of F=1/3 for anomalous diffusion that is the same as for normal diffusion, even if there is no smallest length scale below which the normal diffusion equation holds. The fact that F remains fixed at 1/3 as one crosses the percolation threshold in a random-resistor network may explain recent measurements of a doping-independent Fano factor in a graphene flake.
Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands.
C W
CW
Groth
J
J
Tworzydło
C W J
CW
Beenakker