Preparation of ferroelectric NaNbO(3) thin films on MgO substrate by pulsed laser deposition.
We successfully fabricated good quality NaNbO(3) (NN) films on MgO substrate by pulsed laser deposition using a K-Ta-O (KTO) buffer layer. An SrRuO(3) (SRO) lower electrode layer was deposited on a KTO buffer layer/(100)MgO substrate and then the NN film was deposited on top. X-ray diffraction showed that the SRO and NN films were epitaxially grown on (100)MgO substrate. Transmission electron microscopy showed a crystallographic relationship of [001](NN)//[001](MgO) between NN and MgO. The relative dielectric constant, epsilon(r), and dielectric loss, tan delta, of the film were 350 and 0.05 at 1 kHz, respectively. The polarization vs. electric field (P-E) hysteresis loop of the NN film was characteristic of ferroelectric behavior.
Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194, Japan.
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Oda
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Saito
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Adachi
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Wada
D002516:Ceramics / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D007834:Lasers; D008277:Magnesium Oxide / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial
D008567:Membranes, Artificial; D008277:Magnesium Oxide