Imaging dielectric properties of Si nanowire oxide with conductive atomic force microscopy complemented with femtosecond laser illumination.
In most Si nanowire (NW) applications, Si oxide provides insulation or a medium of controlled electron tunneling. This work revealed both similarities and differences in the dielectric properties of NW oxide compared with that grown on wafers. The interface barrier to electron transit from the semiconductor to the dielectric and the threshold electric field for current flow are quite similar to those in the planar geometry. This is not true for the lowest currents measured which are not uniformly distributed, indicating variations of trap density in the gap of NW oxide.
Institute of Electronic Structure and Laser, Foundation for Research and Technology Hellas, (IESL -FORTH), Heraklion 711 10, Greece.
Emmanuel
E
Stratakis
Nipun
N
Misra
Emmanuel
E
Spanakis
David J
DJ
Hwang
Costas P
CP
Grigoropoulos
Costas
C
Fotakis
Panagiotis
P
Tzanetakis