Optically modulated internal strain in InGaN quantum dots grown on SiN(x) nano masks.
Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiN(x) nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelectric effect arising from the screening of the internal electric field due to spatial separation of photoexcited electrons and holes. Our results point out a convenient way for the fine tuning of physical properties in nitride-based semiconductor nanostructures, which is very important for high quality optoelectronic devices.
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
H J
HJ
Chang
T T
TT
Chen
L L
LL
Huang
Y F
YF
Chen
J Y
JY
Tsai
T C
TC
Wang
H C
HC
Kuo
D003460:Crystallization / Q000379:methods*; D004548:Elasticity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D045663:Quantum Dots; D017655:Silicon Compounds / Q000737:chemistry*; D013314:Stress, Mechanical; D013499:Surface Properties; D014159:Transducers
D017655:Silicon Compounds; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C032734:silicon nitride