On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity.
Institute of Atomic and Molecular Sciences Academia Sinica, Taipei 10617, Taiwan.
Reui-San
RS
Chen
Shiao-Wen
SW
Wang
Zon-Huang
ZH
Lan
Jeff Tsung-Hui
JT
Tsai
Chien-Ting
CT
Wu
Li-Chyong
LC
Chen
Kuei-Hsien
KH
Chen
Ying-Sheng
YS
Huang
Chia-Chun
CC
Chen
D004553:Electric Conductivity; D004563:Electrochemistry; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D008027:Light; D053768:Metal Nanoparticles / Q000737:chemistry*; D008853:Microscopy / Q000379:methods; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry; D010777:Photochemistry / Q000379:methods; D014466:Ultraviolet Rays
C473348:gallium nitride; D005708:Gallium