The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
Xiao
S Q
SQ
Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China.
Wang
H
H
Zhao
Z C
ZC
Gu
Y Z
YZ
Xia
Y X
YX
Wang
Z H
ZH
D003035:Cobalt / Q000737:chemistry* / Q000528:radiation effects; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008567:Membranes, Artificial; D010783:Photometry / Q000295:instrumentation* / Q000379:methods; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D014159:Transducers
D008567:Membranes, Artificial; D003035:Cobalt; D012822:Silicon Dioxide; D012825:Silicon