Shot noise in graphene.
We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theories for shot noise in ballistic and disordered graphene.
Dicarlo
L
L
Department of Physics, Harvard University, Cambridge, MA 02138, USA.
Williams
J R
JR
Zhang
Yiming
Y
McClure
D T
DT
Marcus
C M
CM