Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure.
A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz.
Institut d'Electronique Fondamentale, Université Paris-Sud-CNRS, Bât. 220, F-91405 ORSAY cedex - France. delphine.morini@u-psud.fr
Delphine
D
Marris-Morini
Laurent
L
Vivien
Jean Marc
JM
Fédéli
Eric
E
Cassan
Philippe
P
Lyan
Suzanne
S
Laval
D004867:Equipment Design; D019544:Equipment Failure Analysis; D055095:Optics and Photonics / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon
D012825:Silicon