Broadband and omnidirectional antireflection employing disordered GaN nanopillars.
Disordered GaN nanopillars of three different heights: 300, 550, and 720 nm are fabricated, and demonstrate broad angular and spectral antireflective characteristics, up to an incident angle of 60? and for the wavelength range of lambda=300-1800 nm. An algorithm based on a rigorous coupled-wave analysis (RCWA) method is developed to investigate the correlations between the reflective characteristics and the structural properties of the nanopillars. The broadband and omnidirectional antireflection arises mainly from the refractive-index gradient provided by nanopillars. Calculations show excellent agreement with the measured reflectivities for both s- and p- polarizations.
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C.
C H
CH
Chiu
Peichen
P
Yu
H C
HC
Kuo
C C
CC
Chen
T C
TC
Lu
S C
SC
Wang
S H
SH
Hsu
Y J
YJ
Cheng
Y C
YC
Chang
D003198:Computer Simulation; D005708:Gallium / Q000737:chemistry*; D007909:Lenses; D008027:Light; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010783:Photometry / Q000379:methods*; D012031:Refractometry; D012542:Scattering, Radiation
C473348:gallium nitride; D005708:Gallium