Electromagnetic modeling of active silicon nanocrystal waveguides.
In this paper we propose an electromagnetic analysis of active silicon nano-crystal (Si-nc) waveguide devices. To account for the nonlinearity in the active medium we introduce a four level rate equation model whose parameters are based on experimentally reported material properties. The electromagnetic polarization serves to couple the quantum mechanical and electromagnetic behavior within the ADE-FDTD scheme. The developed modeling tool is used to simulate waveguide amplifiers, enhanced spontaneous emission microcavities, and the temporal lasing dynamics of active Si-nc based devices.
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA. redding@udel.edu
Brandon
B
Redding
Shouyuan
S
Shi
Tim
T
Creazzo
Dennis W
DW
Prather
D000669:Amplifiers, Electronic; D003198:Computer Simulation; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D049329:Nanostructures / Q000737:chemistry*; D055095:Optics and Photonics / Q000295:instrumentation*; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*
D012825:Silicon