High speed hybrid silicon evanescent electroabsorption modulator.
A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. yinghao.kuo@ece.ucsb.edu
Ying-Hao
YH
Kuo
Hui-Wen
HW
Chen
John E
JE
Bowers
D003198:Computer Simulation; D004574:Electromagnetic Fields; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D012542:Scattering, Radiation; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013685:Telecommunications / Q000295:instrumentation*
D012825:Silicon