4X reduction extreme ultraviolet interferometric lithography.
We report the initial results from a 4X reduction interferometric lithography technique using extreme ultraviolet (EUV) radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. We have extended traditional interferometric lithography by using 2(nd) diffraction orders instead of 1(st) orders. This change considerably simplifies mask fabrication by reducing the requirements for mask resolution. Interferometric fringes reduced by 4X (from 70 nm half-period grating to 17.5 nm) have been recorded in a 50 nm thick hydrogen silsesquioxane photoresist using 13.4 nm wavelength EUV radiation.
Isoyan
Artak
A
University of Wisconsin-Madison, Center for NanoTechnology, 425 Henry Mall, Suite 2130, Madison, WI, 53706, USA. isoyan@wisc.edu
Wüest
A
A
Wallace
John
J
Jiang
Fan
F
Cerrina
Franco
F
D003198:Computer Simulation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D008027:Light; D008962:Models, Theoretical; D010781:Photography / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D017356:Synchrotrons / Q000295:instrumentation*; D014466:Ultraviolet Rays