V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties.
We design and fabricate a V-shaped metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.
Department of Automotive Engineering, Seoul National University of Technology, Republic of Korea.
Sang H
SH
Lee
Geunbae
G
Lim
Wonkyu
W
Moon
Hyunjung
H
Shin
Cheong-Wol
CW
Kim