Low loss (approximately 6.45dB/cm) sub-micron polycrystalline silicon waveguide integrated with efficient SiON waveguide coupler.
In this communication, the sub-micron size polycrystalline silicon (poly- Si) single mode waveguides are fabricated and integrated with SiON waveguide coupler by deep UV lithography. The propagation loss of poly-Si waveguide and coupling loss with optical flat polarization-maintaining fiber (PMF) are measured. For whole C-band (i.e., lambda approximately 1520-1565nm), the propagation loss of TE mode is measured to approximately 6.45+/-0.3dB/cm. The coupling loss with optical flat PMF is approximately 3.4dB/facet for TE mode. To the best of our knowledge, the propagation loss is among the best reported results. This communication discusses the factors reducing the propagation loss, especially the effect of the refractive index contrast. Compared to the SiO(2) cladding, poly-Si waveguide with SiON cladding exhibits lower propagation loss.
Fang
Q
Q
Institute of Microelectronics, A*STAR, 11 Science Park Road, Science Park II, Singapore 117685. Fangq@ime.a-star.edu.sg
Song
J F
JF
Tao
S H
SH
Yu
M B
MB
Lo
G Q
GQ
Kwong
D L
DL
D003198:Computer Simulation; D003461:Crystallography; D008027:Light; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D055095:Optics and Photonics / Q000295:instrumentation*; D012031:Refractometry; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D013997:Time Factors
D012825:Silicon