Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal-insulator-semiconductor structure.
Charge trapping properties of electrons and holes in Au nanoparticles embedded in metal-insulator-semiconductor (MIS) on p-type Si (100) substrates were investigated by electrostatic force microscopy (EFM). The Au nanoparticles were prepared with a unique laser irradiation method and charged by applying a bias voltage between EFM tip and sample. The EFM system was used to image charged areas and to determine quantitatively the amount of stored charge in the Au nanoparticle-inserted MIS structure. In addition, charge trapping characteristics of the samples were carried out with electrical measurements, such as capacitance-voltage and current-voltage measurement for memory characteristics. Finally, the comparison of EFM results with the electrically measured data was done to determine the amount of stored charge in the Au nanoparticle-inserted MIS structure, confirming the usefulness of EFM system for the characterization of nanoparticle-based non-volatile devices.
New functional materials and devices Laboratory, Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea.
JungYup
J
Yang
JooHyung
J
Kim
JunSeok
J
Lee
SeungKi
S
Min
HyunJung
H
Kim
Kang L
KL
Wang
JinPyo
J
Hong