Synthesis of nano-dimensional ZnO and Ga doped ZnO thin films by vapor phase transport and study as transparent conducting oxide.
We report synthesis of polycrystalline ZnO and Ga doped ZnO (ZnO:Ga) thin films (approximately 80 nm) on Si and quartz substrates in a non-vacuum muffle furnace, a simple and cost-effective route, without any catalyst/reactive carrier gases, at relatively low processing temperature of 550 degrees C. The crystalline phases of the films are identified by grazing angle X-ray diffraction (GAXRD). The growth of ZnO films is examined with scanning electron microscope (SEM) as a function of deposition time. An optical transmission of approximately 90% is observed for pure ZnO film having a resistivity of approximately 2.1 Omega-cm as measured by van der Pauw technique. Doping with Ga results in single phase ZnO:Ga films, retaining an optical transmission of about 80% and three orders of magnitude decrease in resistivity as compared to pure ZnO film.
Nanostech Laboratory, Department of Physics, Indian Institute of Technology-Delhi, Hauz Khas, New Delhi 110016, India.
S
S
Ghosh
M
M
Saurav
B
B
Pandey
P
P
Srivastava