Widefield subsurface microscopy of integrated circuits.
We apply the numerical aperture increasing lens technique to widefield subsurface imaging of silicon integrated circuits. We demonstrate lateral and longitudinal resolutions well beyond the limits of conventional backside imaging. With a simple infrared widefield microscope (lambda(0) = 1.2 microm), we demonstrate a lateral spatial resolution of 0.26 microm (0.22 lambda(0)) and a longitudinal resolution of 1.24 microm (1.03 lambda(0)) for backside imaging through the silicon substrate of an integrated circuit. We present a spatial resolution comparison between widefield and confocal microscopy, which are essential in integrated circuit analysis for emission and excitation microscopy, respectively.
Department of Physics and Electrical and Computer Engineering and the Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215, USA. hakan@bu.edu
Fatih Hakan
FH
Köklü
Justin I
JI
Quesnel
Anthony N
AN
Vamivakas
Stephen B
SB
Ippolito
Bennett B
BB
Goldberg
M Selim
MS
Unlü
D003198:Computer Simulation; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000295:instrumentation* / Q000379:methods; D005336:Fiber Optic Technology / Q000295:instrumentation*; D007090:Image Interpretation, Computer-Assisted / Q000295:instrumentation* / Q000379:methods; D007368:Interferometry / Q000295:instrumentation*; D018613:Microscopy, Confocal / Q000295:instrumentation*; D008962:Models, Theoretical; D012666:Semiconductors