Measurement and simulation of filamentation in (Al,In)GaN laser diodes.
(Al,In)GaN-based laser diodes with ridge widths broader than a few micrometer tend to show filamentation effects in the lateral direction. By time-resolved scanning near-field optical microscopy, we find different kinds of filaments depending on ridge width and lateral position. We investigate these effects systematically and compare them to the results of corresponding simulations, which are based on a simple rate equation model including the lateral dimension. By this comparison we find a consistent and reasonable set of material parameters that can describe the laser diode. Furthermore, we discuss several reasons for filamentation dynamics like ridge asymmetry or spatial hole-burning, as well as critical temperatures that induce filamentation.
Naturwissenschaftliche Fakultät II-Physik, Universität Regensburg, Universitätsstrasse 31, Regensburg, Germany.
Dominik
D
Scholz
Harald
H
Braun
Ulrich T
UT
Schwarz
Stefanie
S
Brüninghoff
Désirée
D
Queren
Alfred
A
Lell
Uwe
U
Strauss