A polarization-modulation method for the near-field mapping of laterally grown InGaN samples.
Epitaxial Laterally overgrown (ELOG) InGaN materials are investigated using a polarization modulated scanning near-field optical microscope. The authors found that luminescence has spatial inhomogeneities and it is partially polarized. Near-field photoluminescence shows polarization phase fluctuation up to 45 degrees over adjacent domains. These results point toward the existence of asymmetries in carrier confinement due to structural anisotropic strain within the framework of the ELOG structure.
Department of Electronic Science, Kyoto University, Graduate School of Engineering, Nishigyo-ku, Katsura, 615-8510 Kyoto, Japan.
Ruggero
R
Micheletto
Daisuke
D
Yamada
Maria
M
Allegrini
Yoichi
Y
Kawakami
D000537:Aluminum Oxide; D016880:Anisotropy; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008853:Microscopy / Q000379:methods; D055095:Optics and Photonics
D007204:Indium; C473348:gallium nitride; D005708:Gallium; D000537:Aluminum Oxide