Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.
Abundant hexagonal prism-shaped SiC nanowires were synthesized on graphite substrate via heating silicon in a graphite crucible. The products were characterized using X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FT-IR), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The characterization first showed that the product was nanowires of beta-SiC with almost a perfect hexagonal cross section. The growth was determined along [111] direction. The six side surfaces look smooth under low magnification microscopy, but faceted at high magnification. Based on the characterization results, a formation mechanism combining vapor-solid (VS) growth mechanism and the lowest surface energy principle is proposed.
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Jianjun
J
Chen
Guangyi
G
Yang
Renbing
R
Wu
Yi
Y
Pan
Jing
J
Lin
Rui
R
Zhai
Lingling
L
Wu
D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties
D017554:Carbon Compounds, Inorganic; D046911:Macromolecular Substances; D017655:Silicon Compounds; C022088:silicon carbide