Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays.
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.
Los Alamos National Laboratory, MPA-CINT, MS K771, Los Alamos, New Mexico 87545, USA. chenht@lanl.gov
Hou-Tong
HT
Chen
Hong
H
Lu
Abul K
AK
Azad
Richard D
RD
Averitt
Arthur C
AC
Gossard
Stuart A
SA
Trugman
John F
JF
O'Hara
Antoinette J
AJ
Taylor
D003198:Computer Simulation; D017076:Computer-Aided Design; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008872:Microwaves; D008962:Models, Theoretical; D012542:Scattering, Radiation; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*