Birefringence and optical power confinement in horizontal multi-slot waveguides made of Si and SiO2.
Through simulations and measurements, we show that in multi-slot thin film waveguides, the TM polarized modes can be confined mostly in the low refractive index layers of the waveguide. The structure consisted of alternating layers of a-Si and SiO(2), in the thickness range between 3 and 40 nm, for which the slots were the SiO(2) layers. Simulations were performed using the transfer matrix method and experiments using the m-line technique at 1.55 mum. The dependence of the birefringence and of the power confinement in the slots was studied as a function of the waveguide thickness, the Si and SiO(2) layer thicknesses, and the SiO(2) / Si layer thickness ratio. We find a large birefringence-a refractive index difference between TE and TM modes-as large as 0.8. For TM polarized modes, up to ~ 85% of the total power in the fundamental mode can be confined in the slots.
Yoo
Han G
HG
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA. hgyoo@pas.rochester.edu
Fu
Yijing
Y
Riley
Daniel
D
Shin
Jung H
JH
Fauchet
Philippe M
PM
D001718:Birefringence; D003198:Computer Simulation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation* / Q000379:methods; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D014159:Transducers
D012822:Silicon Dioxide; D012825:Silicon