High speed hybrid silicon evanescent electroabsorption modulator.
A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.
Kuo
Ying-Hao
YH
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. yinghao.kuo@ece.ucsb.edu
Chen
Hui-Wen
HW
Bowers
John E
JE
D003198:Computer Simulation; D004574:Electromagnetic Fields; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D012542:Scattering, Radiation; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013685:Telecommunications / Q000295:instrumentation*
D012825:Silicon