Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power.
Micropixelated blue (470 nm) and ultraviolet (370 nm) AlInGaN light emitting diode ('micro-LED') arrays have been fabricated in flip-chip format with different pixel diameters (72 microm and 30 microm at, respectively, 100 and 278 pixels/mm(2)). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55 microW/microm(2) (55 W/cm(2)) at an injection current density of 10 kA/cm(2) and can sustain continuous injection current densities of up to 12 kA/cm(2) before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel onaxis average peak intensity up to 2.9 microW/microm(2) (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.
Zhang
H X
HX
Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G40NW, UK.
Massoubre
D
D
McKendry
J
J
Gong
Z
Z
Guilhabert
B
B
Griffin
C
C
Gu
E
E
Jessop
P E
PE
Girkin
J M
JM
Dawson
M D
MD
D017607:Aluminum Compounds / Q000737:chemistry; D003198:Computer Simulation; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation*; D012542:Scattering, Radiation; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
D017607:Aluminum Compounds