Strong optical injection-locked semiconductor lasers demonstrating > 100-GHz resonance frequencies and 80-GHz intrinsic bandwidths.
By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.
Lau
Erwin K
EK
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA. elau@eecs.berkeley.edu
Zhao
Xiaoxue
X
Sung
Hyuk-Kee
HK
Parekh
Devang
D
Chang-Hasnain
Connie
C
Wu
Ming C
MC
D054023:Lasers, Semiconductor; D055095:Optics and Photonics