Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.
We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022, PR China.
Chengang
C
Feng
Mingdong
M
Yi
Shunyang
S
Yu
Ivo A
IA
Hümmelgen
Tong
T
Zhang
Dongge
D
Ma
D000669:Amplifiers, Electronic; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008670:Metals / Q000737:chemistry*; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D014173:Transistors, Electronic
D008670:Metals