Trifluoromethyltriphenodioxazine: air-stable and high-performance n-type semiconductor.
Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.
Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P.R. China.
Chong-an
CA
Di
Jing
J
Li
Gui
G
Yu
Yi
Y
Xiao
Yunlong
Y
Guo
Yunqi
Y
Liu
Xuhong
X
Qian
Daoben
D
Zhu
D000388:Air; D018360:Crystallography, X-Ray; D008968:Molecular Conformation; D015394:Molecular Structure; D010078:Oxazines / Q000138:chemical synthesis* / Q000737:chemistry*; D012666:Semiconductors
D010078:Oxazines