High responsivity GaNAsSb p-i-n photodetectors at 1.3 microm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy.
GaNAsSb/GaAs p-i-n photo notdetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350 degrees C, 400 degrees C, 440 degrees C and 480 degrees C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i-GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350 nm. The device with i-GaNAsSb layer grown at 350 degrees C exhibits extremely high photoresponsivity of 12A/W at 1.3 microm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore. etankh@ntu.edu.sg
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KH
Tan
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SF
Yoon
W K
WK
Loke
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Wicaksono
T K
TK
Ng
K L
KL
Lew
A
A
Stöhr
S
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Fedderwitz
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Weiss
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Jäger
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Saadsaoud
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Dogheche
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Decoster
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Chazelas
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D006358:Hot Temperature; D009584:Nitrogen / Q000737:chemistry* / Q000528:radiation effects; D010783:Photometry / Q000295:instrumentation* / Q000379:methods; D011846:Radio Waves; D012666:Semiconductors; D014159:Transducers
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D009584:Nitrogen