Core-shell heterostructured phase change nanowire multistate memory.
Phase-change memory, which switches reversibly between crystalline and amorphous phases, is promising for next generation data-storage devices. In this work, we present a novel, nonbinary data-storage device using core-shell nanowires to significantly enhance memory capacity by combining two phase-change materials with different electronic and thermal properties to engineer different onsets of amorphous-crystalline transitions. Electric-field induced sequential amorphous-crystalline transition in core-shell nanowires displays three distinct electronic states with high, low, and intermediate resistances, assigned as data "0", "1", and "2".
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA.
Yeonwoong
Y
Jung
Se-Ho
SH
Lee
Andrew T
AT
Jennings
Ritesh
R
Agarwal