Longwave plasmonics on doped silicon and silicides.
The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd(2)Si, NiSi, PtSi(2) WSi(2) or CoSi(2) formed at the Si chip surface. For doping concentrations of 10(20) cm(-3) and 10(21) cm(-3), our dispersion calculations show that bound surface plasmon polaritons will propagate with low loss on stripe-shaped plasmonic waveguides over the 10 to 55 microm and 2.8 to 15 microm wavelength ranges, respectively. For Pd(2)Si/Si plasmonic waveguides, the wavelength range of 0.5 to 7.5 microm is useful and here the propagation lengths are 1 to 2300 microm. For both doped and silicided guides, the SPP mode field extends much more into the air above the stripe than it does into the conductive stripe material.
Soref
Richard
R
Sensors Directorate, Air Force Research Laboratory, AFRL/RYHC, Hanscom Air Force Base, MA 01731-2909, USA. Richard.Soref@hanscom.af.mil
Peale
Robert E
RE
Buchwald
Walter
W
D006046:Gold / Q000737:chemistry; D055095:Optics and Photonics; D012825:Silicon / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*
D017655:Silicon Compounds; D006046:Gold; D012825:Silicon