Electrostatic force microscopy study on the domain switching properties of the Pb(Zr0.2Ti0.8)O3 thin films with different crystallographic orientations for the probe-based data storage.
The domain switching properties of the ferroelectric Pb(Zr(0.2)Ti(0.8))O(3) (PZT) thin films with two types of crystallographic orientations were investigated by electrostatic force microscopy (EFM). The crystallographic orientations of the PZT thin films were random on the (111)Pt/MgO(100) and c-axis preferred on the (100)Pt/MgO(100), respectively. When dc bias was applied to the films for writing in micro-scale area, electrostatic force images showed that the domain switching was hard in the PZT thin films with random orientation, while the pattern could clearly be written in the PZT films with c-axis orientation. The differences in the domain switching properties of each PZT thin film were investigated in the crystallographic orientations point of view, and the domain switching dynamics were also measured by investigating the nano-sized dot switching behavior with respect to the width of the applied voltage pulse.
Devices and Materials Laboratory, LG Electronics Institute of Technology, Seoul 137-724, Republic of Korea. smncho@lge.com
Seong-Moon
SM
Cho
Hyo-Jin
HJ
Nam
Bae Ho
BH
Park
Duk-Young
DY
Jeon