A quantitative analytical model for static dipolar disorder broadening of the density of states at organic heterointerfaces.
Understanding the electronic structure of organic-organic heterointerfaces is crucial for many device applications of organic semiconductors. Here we have developed a simple analytical model to describe the effect of static dipolar disorder in a polymer dielectric on the density of states of an adjacent organic semiconductor. The degree of energetic disorder varies strongly with distance from the interface. Using a simple mobility model, we have been able to explain quantitatively both the magnitude as well as the gate voltage dependence of the field-effect mobility for polymer gate dielectrics with different dielectric constants.
Cavendish Laboratory, JJ Thompson Avenue, Cambridge CB3 0HE, United Kingdom.
Tim
T
Richards
Matthew
M
Bird
Henning
H
Sirringhaus