25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator.
We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7 x 10(12) cm(-2). The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide--the latter as a result of implantation induced amorphization--is carefully evaluated and in good agreement with theoretical predictions.
Waldow
Michael
M
Institut für Halbleitertechnik, RWTH Aachen University, 52074 Aachen, Germany. waldow@iht.rwth-aachen.de
Plötzing
Tobias
T
Gottheil
Martin
M
Först
Michael
M
Bolten
Jens
J
Wahlbrink
Thorsten
T
Kurz
Heinrich
H
D003198:Computer Simulation; D017076:Computer-Aided Design; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008904:Miniaturization; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D010100:Oxygen / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration; D014159:Transducers
D010100:Oxygen; D012825:Silicon