High responsivity GaNAsSb p-i-n photodetectors at 1.3 microm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy.
GaNAsSb/GaAs p-i-n photo notdetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350 degrees C, 400 degrees C, 440 degrees C and 480 degrees C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i-GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350 nm. The device with i-GaNAsSb layer grown at 350 degrees C exhibits extremely high photoresponsivity of 12A/W at 1.3 microm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.
Tan
K H
KH
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore. etankh@ntu.edu.sg
Yoon
S F
SF
Loke
W K
WK
Wicaksono
S
S
Ng
T K
TK
Lew
K L
KL
Stöhr
A
A
Fedderwitz
S
S
Weiss
M
M
Jäger
D
D
Saadsaoud
N
N
Dogheche
E
E
Decoster
D
D
Chazelas
J
J
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D006358:Hot Temperature; D009584:Nitrogen / Q000737:chemistry* / Q000528:radiation effects; D010783:Photometry / Q000295:instrumentation* / Q000379:methods; D011846:Radio Waves; D012666:Semiconductors; D014159:Transducers
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D009584:Nitrogen