V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties.
We design and fabricate a V-shaped metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.
Lee
Sang H
SH
Department of Automotive Engineering, Seoul National University of Technology, Republic of Korea.
Lim
Geunbae
G
Moon
Wonkyu
W
Shin
Hyunjung
H
Kim
Cheong-Wol
CW