Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.
We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.
Kang
Y
Y
Intel Corporation, 2200 Mission College Blvd, Santa Clara, CA 95054, USA. yimin.kang@intel.com
Zadka
M
M
Litski
S
S
Sarid
G
G
Morse
M
M
Paniccia
M J
MJ
Kuo
Y-H
YH
Bowers
J
J
Beling
A
A
Liu
H D
HD
McIntosh
D C
DC
Campbell
J
J
Pauchard
A
A
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008027:Light; D008962:Models, Theoretical; D010783:Photometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012666:Semiconductors; D012680:Sensitivity and Specificity; D012825:Silicon / Q000737:chemistry*
D005857:Germanium; D012825:Silicon