Ion beam doping of silicon nanowires.
We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline structure can be recovered by thermal annealing at 800 degrees C. For not-annealed, as-implanted NWs, we correlate the onset of amorphization with an increase of phonon confinement in the NW core. This is ion-dependent and detectable for P-implantation only. Hysteresis is observed following both P and B implantation.
Colli
Alan
A
Nokia Research Centre, Cambridge, UK. alan.colli@nokia.com
Fasoli
Andrea
A
Ronning
Carsten
C
Pisana
Simone
S
Piscanec
Stefano
S
Ferrari
Andrea C
AC