title: Electrochromic nanostructures grown on a silicon nanowire template.
abstract: Vertically grown Si nanowires were prepared as a nanotemplate for conducting polymers. Electrochromic (EC) PEDOT (poly(3,4-ethylenedioxythiophene)) layer was successfully grown on Si nanowires by electrochemical polymerization method to form PEDOT nanowires having average wall thickness of approximately 60 nm. As-prepared conductive nanowire electrode was applied to a low voltage working EC device by fabricating an all solid state EC device. The EC properties of the device were enhanced in the nanowire structure, showing reversible fast optical transition by applying +/-2 V. The response time (t(R)) of the EC device from the PEDOT grown on Si nanowires was approximately 0.7 s, which was much faster than that from PEDOT film coated on ITO glass electrochemically (t(R)=1.9 s).
authors.affiliation: Department of Chemical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, 120-749 Seoul, Republic of Korea.
authors.forename: Yuna
authors.initials: Y
authors.lastname: Kim
authors.forename: Jehoon
authors.initials: J
authors.lastname: Baek
authors.forename: Myoung-Ha
authors.initials: MH
authors.lastname: Kim
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi
authors.forename: Eunkyoung
authors.initials: E
authors.lastname: Kim