title: Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction.
abstract: Strained-silicon p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) have been investigated by large angle convergent-beam electron diffraction (LACBED). Longitudinal compressive strain is induced into the channel region of a p-type strained-silicon channel metal-oxide-semiconductor field effect transistor by a low-cost Ge pre-amorphization implantation for source/drain extension flow. Anomalously large longitudinal compressive strain, up to 2.5 x 10(-2), in the nanometer scale channel region of pMOSFETs has been measured using LACBED. We propose a novel scaling effect for the giant strain enhancement. Our experimental results and model analysis together reveal that the channel strain is inversely proportional to the shrinking channel length.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China.
authors.forename: H H
authors.initials: HH
authors.lastname: Liu
authors.forename: X F
authors.initials: XF
authors.lastname: Duan
authors.forename: Qiuxia
authors.initials: Q
authors.lastname: Xu
authors.forename: Bang-Gui
authors.initials: BG
authors.lastname: Liu