GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength.
A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres followed by dry etching. A layer of spin-on-glass (SOG), which intervening the rod spacing, serves the purpose of electric isolation to each of the parallel nanorod LED units. The electroluminescence peak wavelengths of the nanorod LEDs nearly remain as constant for an injection current level between 25mA and 100mA, which indicates that the quantum confined stark effect is suppressed in the nanorod devices. Furthermore, from the Raman light scattering analysis we identify a strain relaxation mechanism for lattice mismatch layers in the nanostructure.
Wang
Cheng-Yin
CY
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4Taipei, 106 Taiwan.
Chen
Liang-Yi
LY
Chen
Cheng-Pin
CP
Cheng
Yun-Wei
YW
Ke
Min-Yung
MY
Hsieh
Min-Yann
MY
Wu
Han-Ming
HM
Peng
Lung-Han
LH
Huang
JianJang
J