title: Production of pulsed, mass-selected beams of metal and semiconductor clusters.
abstract: We report on the development of a beam line for mass-selected metal and semiconductor clusters. The cluster source combines the principles of plasma sputtering and gas condensation. Both techniques together allow to produce clusters in a wide size range. With the aid of a time-of-flight system, small clusters (i.e., Cu(n)(+), n<100) are selected and pure beams containing only one cluster size are provided. For large clusters (containing several thousands of atoms), a beam with a narrow size distribution is obtained. A 90 degrees quadrupole deviator is used to separate charged clusters from neutral ones.
authors.affiliation: CIMAP, CEA-CNRS-ENSICaen-UCBN, Caen Cedex 05, France.
authors.forename: Omar
authors.initials: O
authors.lastname: Kamalou
authors.forename: Jimmy
authors.initials: J
authors.lastname: Rangama
authors.forename: Jean-Marc
authors.initials: JM
authors.lastname: Ramillon
authors.forename: Patrick
authors.initials: P
authors.lastname: Guinement
authors.forename: Bernd A
authors.initials: BA
authors.lastname: Huber