Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser.
We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.
Merghem
K
K
CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis, France. kamel.merghem@lpn.cnrs.fr
Akrout
A
A
Martinez
A
A
Moreau
G
G
Tourrenc
J-P
JP
Lelarge
F
F
Van Dijk
F
F
Duan
G-H
GH
Aubin
G
G
Ramdane
A
A