title: Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser.
abstract: We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.
authors.affiliation: CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis, France. kamel.merghem@lpn.cnrs.fr
authors.forename: K
authors.initials: K
authors.lastname: Merghem
authors.forename: A
authors.initials: A
authors.lastname: Akrout
authors.forename: A
authors.initials: A
authors.lastname: Martinez
authors.forename: G
authors.initials: G
authors.lastname: Moreau
authors.forename: J-P
authors.initials: JP
authors.lastname: Tourrenc
authors.forename: F
authors.initials: F
authors.lastname: Lelarge
authors.forename: F
authors.initials: F
authors.lastname: Van Dijk
authors.forename: G-H
authors.initials: GH
authors.lastname: Duan
authors.forename: G
authors.initials: G
authors.lastname: Aubin
authors.forename: A
authors.initials: A
authors.lastname: Ramdane