title: Ion beam doping of silicon nanowires.
abstract: We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline structure can be recovered by thermal annealing at 800 degrees C. For not-annealed, as-implanted NWs, we correlate the onset of amorphization with an increase of phonon confinement in the NW core. This is ion-dependent and detectable for P-implantation only. Hysteresis is observed following both P and B implantation.
authors.affiliation: Nokia Research Centre, Cambridge, UK. alan.colli@nokia.com
authors.forename: Alan
authors.initials: A
authors.lastname: Colli
authors.forename: Andrea
authors.initials: A
authors.lastname: Fasoli
authors.forename: Carsten
authors.initials: C
authors.lastname: Ronning
authors.forename: Simone
authors.initials: S
authors.lastname: Pisana
authors.forename: Stefano
authors.initials: S
authors.lastname: Piscanec
authors.forename: Andrea C
authors.initials: AC
authors.lastname: Ferrari