Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition.
The composition of GeO(2) films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent.
Molle
Alessandro
A
CNR-INFM Laboratorio Nazionale MDM, Via C. Olivetti 2, 20041 Agrate Brianza (Milano), Italy. alessandro.molle@mdm.infm.it
Spiga
Sabina
S
Fanciulli
Marco
M