Air-assisted high-performance field-effect transistor with thin films of picene.
A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The mu increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.
Okamoto
Hideki
H
Division of Chemistry and Biochemistry, Okayama University, Okayama 700-8530, Japan. hokamoto@cc.okayama-u.ac.jp
Kawasaki
Naoko
N
Kaji
Yumiko
Y
Kubozono
Yoshihiro
Y
Fujiwara
Akihiko
A
Yamaji
Minoru
M