title: Chemical analysis of impurity boron atoms in diamond using soft X-ray emission spectroscopy.
abstract: To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.
authors.affiliation: Graduate School of Engineering, University of Hyogo, Himeji, Hyogo, Japan. murama@eng.u-hyogo.ac.jp
authors.forename: Yasuji
authors.initials: Y
authors.lastname: Muramatsu
authors.forename: Junji
authors.initials: J
authors.lastname: Iihara
authors.forename: Toshihiko
authors.initials: T
authors.lastname: Takebe
authors.forename: Jonathan D
authors.initials: JD
authors.lastname: Denlinger