Local variability in PTC thermistor grain boundary structures.
Scanning electron microscopy-based conductive mode (CM) microscopy, using the remote electron beam-induced current configuration, was carried out on a positive temperature coefficient of resistance thermistor at temperatures below and above the Curie temperature, T(C). Below T(C), when the thermistor is in a low resistance state, no strong CM contrast was observed. Above T(C) the thermistor grain boundaries become highly resistive and significant CM contrast formed owing to three mechanisms: all of the areas that were studied showed resistive contrast, but in addition some grain boundaries showed additional contrast due to electron beam-induced current, the origin of which was consistent with the presence of a back-to-back Schottky barrier structure at the grain boundary. Other grain boundaries exhibited additional contrast owing to beta-conductivity, which suggests a slightly different n-i-n grain boundary structure at these interfaces. These results suggest that electrically active grain boundaries with different structures coexist within the thermistor.
Leach
C
C
Materials Science Centre, School of Materials, University of Manchester, Manchester M1 7HS, UK. Colin.leach@manchester.ac.uk
Seaton
J
J