title: Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density.
abstract: Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.
authors.forename: Woo
authors.initials: W
authors.lastname: Lee
authors.forename: Hee
authors.initials: H
authors.lastname: Han
authors.forename: Andriy
authors.initials: A
authors.lastname: Lotnyk
authors.forename: Markus Andreas
authors.initials: MA
authors.lastname: Schubert
authors.forename: Stephan
authors.initials: S
authors.lastname: Senz
authors.forename: Marin
authors.initials: M
authors.lastname: Alexe
authors.forename: Dietrich
authors.initials: D
authors.lastname: Hesse
authors.forename: Sunggi
authors.initials: S
authors.lastname: Baik
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele
mesh_terms: D025802:Electric Capacitance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval; D008280:Magnetics; D008567:Membranes, Artificial; D036103:Nanotechnology / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
chemical_list: D008567:Membranes, Artificial