Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs.
We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.
Qu
Liangti
L
Department of Chemical and Materials Engineering, School of Engineering, University of Dayton, 300 College Park, Dayton, Ohio 45469, USA.
Du
Feng
F
Dai
Liming
L