Blocking the lateral film growth at the nanoscale in area-selective atomic layer deposition.
Area-selective atomic layer deposition (ALD) allows the growth of highly uniform thin inorganic films on certain parts of the substrate while preventing the film growth on other parts. Although the selective ALD growth is working well at the micron and submicron scale, it has failed at the nanoscale, especially near the interface where there is growth on one side and no-growth on the other side. The reason is that methods so far solely rely on the chemical modification of the substrate, while neglecting the occurrence of lateral ALD growth at the nanoscale. Here we present a proof-of-concept for blocking the lateral ALD growth also at the nanoscale by combining the chemical surface modification with topographical features. We demonstrate that area-selective ALD of ZnO occurs by applying the diethylzinc/water ALD process on cicada wings that contain a dense array of nanoscopic pillars. The sizes of the features in the inorganic film are down to 25 nm which is, to the best of our knowledge, the smallest obtained by area-selective ALD. Importantly, our concept allows the synthesis of such small features even though the film is multiple times thicker.
Ras
Robin H A
RH
Molecular Materials, Helsinki University of Technology, Puumiehenkuja 2, FIN-02150 Espoo, Finland. robin.ras@tkk.fi
Sahramo
Elina
E
Malm
Jari
J
Raula
Janne
J
Karppinen
Maarit
M