title: Valence surface electronic states on Ge(001).
abstract: The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E{F}). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E{F}, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.
authors.affiliation: School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan 2308, Australia. marian.radny@newcastle.edu.au
authors.forename: M W
authors.initials: MW
authors.lastname: Radny
authors.forename: G A
authors.initials: GA
authors.lastname: Shah
authors.forename: S R
authors.initials: SR
authors.lastname: Schofield
authors.forename: P V
authors.initials: PV
authors.lastname: Smith
authors.forename: N J
authors.initials: NJ
authors.lastname: Curson