title: CMOS-compatible dual-output silicon modulator for analog signal processing.
abstract: A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.
authors.affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USA. spector@ll.mit.edu
authors.forename: S J
authors.initials: SJ
authors.lastname: Spector
authors.forename: M W
authors.initials: MW
authors.lastname: Geis
authors.forename: G-R
authors.initials: GR
authors.lastname: Zhou
authors.forename: M E
authors.initials: ME
authors.lastname: Grein
authors.forename: F
authors.initials: F
authors.lastname: Gan
authors.forename: M A
authors.initials: MA
authors.lastname: Popovic
authors.forename: J U
authors.initials: JU
authors.lastname: Yoon
authors.forename: D M
authors.initials: DM
authors.lastname: Lennon
authors.forename: E P
authors.initials: EP
authors.lastname: Ippen
authors.forename: F Z
authors.initials: FZ
authors.lastname: Kärtner
authors.forename: T M
authors.initials: TM
authors.lastname: Lyszczarz
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D055095:Optics and Photonics / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon