Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen.
The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass.
Mansour
A I
AI
Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2G7. amansour@phys.ualberta.ca
Salman
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Chow
K H
KH
Fan
I
I
King
P J C
PJ
Hitti
B
B
Jung
J
J
Cottrell
S P
SP