Linker-free directed assembly of high-performance integrated devices based on nanotubes and nanowires.
Advanced electronic devices based on carbon nanotubes (NTs) and various types of nanowires (NWs) could have a role in next-generation semiconductor architectures. However, the lack of a general fabrication method has held back the development of these devices for practical applications. Here we report an assembly strategy for devices based on NTs and NWs. Inert surface molecular patterns were used to direct the adsorption and alignment of NTs and NWs on bare surfaces to form device structures without the use of linker molecules. Substrate bias further enhanced the amount of NT and NW adsorption. Significantly, as all the processing steps can be performed with conventional microfabrication facilities, our method is readily accessible to the present semiconductor industry. We use this method to demonstrate large-scale assembly of NT- and NW-based integrated devices and their applications. We also provide extensive analysis regarding the reliability of the method.
Lee
M
M
School of Physics, Seoul National University, Kwanak-Gu, Shilim-Dong, Seoul 151-747, Korea.
Im
J
J
Lee
B Y
BY
Myung
S
S
Kang
J
J
Huang
L
L
Kwon
Y-K
YK
Hong
S
S
D003432:Cross-Linking Reagents; D003460:Crystallization / Q000379:methods; D004559:Electric Wiring / Q000295:instrumentation* / Q000379:methods; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D012666:Semiconductors; D018511:Systems Integration
D003432:Cross-Linking Reagents