title: High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding.
abstract: We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature ( <or=400 degrees C) wafer bonding and ion-cut process. The devices shows a low dark current of approximately 100 nA, a fiber accessed responsivity of > 0.4 A/W and an estimated quantum efficiency of above 90%.
authors.affiliation: School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. lc286@cornell.edu
authors.forename: Long
authors.initials: L
authors.lastname: Chen
authors.forename: Po
authors.initials: P
authors.lastname: Dong
authors.forename: Michal
authors.initials: M
authors.lastname: Lipson
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008027:Light; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D010783:Photometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012666:Semiconductors; D018511:Systems Integration; D013696:Temperature
chemical_list: D005857:Germanium