title: Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs.
abstract: We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.
authors.affiliation: Department of Chemical and Materials Engineering, School of Engineering, University of Dayton, 300 College Park, Dayton, Ohio 45469, USA.
authors.forename: Liangti
authors.initials: L
authors.lastname: Qu
authors.forename: Feng
authors.initials: F
authors.lastname: Du
authors.forename: Liming
authors.initials: L
authors.lastname: Dai