Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-square root(3) x square root(3) surfaces.
The growth of pentacene films on different metal (Ga, Pb, Bi, Ag) induced Si(111)-(square root(3) x square root(3))R30 degrees surfaces is investigated by scanning tunneling microscopy. On surfaces with high atomic surface roughness, such as GaSi-square root(3), beta-PbSi-square root(3), and alpha-BiSi-square root(3), pentacene forms an initial disordered wetting layer followed by the growth of crystalline thin films. The growth behavior is independent of the metallicity of the substrate surface in this regime. On the other hand, on surfaces with low adatom surface roughness, pentacene molecules form self-organized structures without forming a wetting layer. Moreover, the molecular orientation is critically dependent on the surface metallicity. This work reveals that the growth mode of pentacene on solid surfaces is determined by the combined effects of structural and electronic properties of the substrate.
Teng
Jing
J
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China.
Guo
Jiandong
J
Wu
Kehui
K
Wang
Enge
E
D004583:Electrons; D008670:Metals / Q000737:chemistry*; D009279:Naphthacenes / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D008670:Metals; D009279:Naphthacenes; C523499:pentacene; D012825:Silicon