title: Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.
abstract: The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.
authors.affiliation: School of Electrical and Computer Engineering, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA.
authors.forename: Sanghyun
authors.initials: S
authors.lastname: Ju
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Yi
authors.initials: Y
authors.lastname: Xuan
authors.forename: Jun
authors.initials: J
authors.lastname: Liu
authors.forename: Fumiaki
authors.initials: F
authors.lastname: Ishikawa
authors.forename: Peide
authors.initials: P
authors.lastname: Ye
authors.forename: Chongwu
authors.initials: C
authors.lastname: Zhou
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
authors.forename: David B
authors.initials: DB
authors.lastname: Janes
mesh_terms: D003460:Crystallization / Q000379:methods*; D004548:Elasticity; D004581:Electronics / Q000295:instrumentation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D046911:Macromolecular Substances; D007204:Indium; C047711:indium oxide; D015034:Zinc Oxide