title: Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen.
abstract: The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass.
authors.affiliation: Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2G7. amansour@phys.ualberta.ca
authors.forename: A I
authors.initials: AI
authors.lastname: Mansour
authors.forename: Z
authors.initials: Z
authors.lastname: Salman
authors.forename: K H
authors.initials: KH
authors.lastname: Chow
authors.forename: I
authors.initials: I
authors.lastname: Fan
authors.forename: P J C
authors.initials: PJ
authors.lastname: King
authors.forename: B
authors.initials: B
authors.lastname: Hitti
authors.forename: J
authors.initials: J
authors.lastname: Jung
authors.forename: S P
authors.initials: SP
authors.lastname: Cottrell