Precise diode method for recording contact potential changes caused by gas adsorption.
A low-temperature recording diode is described which allows the determination of adsorption-induced contact potential differences with an accuracy of better than 0.5 mV. Some experimental work function results of the hydrogen adsorption on platinum (111) and (997) single-crystal faces are presented which demonstrate the usefulness of the method.
Christmann
K
K
Institut für Physikalische Chemie der Universität München, 8000 München 2, West Germany.
Herz
H
H