Semiautomatic measurements of thin-film breakdown voltages.
A semiautomatic setup is described which provides the destruction-free measurement of breakdown voltages of thin-film structures for applications like process control and quality prediction. The method of measuring the breakdown voltage consists in feeding a constant current to the thin-film device and analyzing the voltage buildup across the device. This method has been described in a recent paper. The setup provides the successive analysis of breakdown behavior of a given matrix of wafer dots by means of a positioning table, an electropneumatic prober, and a microprocessor-controlled measurement unit via handshake commands. The results are given in a histogram form.
Gaebler
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Hahn-Meitner-Institut fur Kernforschung Berlin GmbH, Bereich Datenverarbeitung und Elektronik, Glienicker Strasse 100, D-1000 Berlin 39, West Germany.
Conrad
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Braeunig
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Fahrner
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Ferretti
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Wulf
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