title: Syntaxial growth of Ge/Mn-germanide nanowire heterostructures.
abstract: We report the growth of free-standing one-dimensional Ge/Mn-germanide nanowire heterostructures by chemical vapor deposition and provide a detailed description of the growth mechanism. Self-assembled manganese-germanide particles seed the growth of Ge nanowires (GeNWs) and simultaneously elongate along a parallel axis, resulting in syntaxial growth of the two phases. The GeNW growth is limited by GeH 4 decomposition, whereas the germanide growth is limited by reaction of Mn at the growth interface. This syntaxial growth mechanism provides a novel route to axial metal/semiconductor nanowire heterostructures.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors.forename: Jessica L
authors.initials: JL
authors.lastname: Lensch-Falk
authors.forename: Eric R
authors.initials: ER
authors.lastname: Hemesath
authors.forename: Lincoln J
authors.initials: LJ
authors.lastname: Lauhon