title: Precise diode method for recording contact potential changes caused by gas adsorption.
abstract: A low-temperature recording diode is described which allows the determination of adsorption-induced contact potential differences with an accuracy of better than 0.5 mV. Some experimental work function results of the hydrogen adsorption on platinum (111) and (997) single-crystal faces are presented which demonstrate the usefulness of the method.
authors.affiliation: Institut für Physikalische Chemie der Universität München, 8000 München 2, West Germany.
authors.forename: K
authors.initials: K
authors.lastname: Christmann
authors.forename: H
authors.initials: H
authors.lastname: Herz