title: Composition controlled synthesis and Raman analysis of Ge-rich Si(x)Ge(1-x) nanowires.
abstract: Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si(x)Ge(1-x) alloy nanowires is controlled by the vapor phase composition of Ge.
authors.affiliation: Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA.
authors.forename: P
authors.initials: P
authors.lastname: Meduri
authors.forename: G U
authors.initials: GU
authors.lastname: Sumanasekera
authors.forename: Z
authors.initials: Z
authors.lastname: Chen
authors.forename: M K
authors.initials: MK
authors.lastname: Sunkara