Gigahertz stroboscopy with the scanning electron microscope.
The application of the stroboscopic scanning electron microscope to gigahertz Gunn effect devices is discussed. Two modes of operation, the deflection mode and the bunching mode, are considered. In the bunching mode, using 1.5 ps beam pulses, two-dimensional voltage contrast in a Gunn effect device triggered at 1 GHz has been observed. A powerful technique for a device in pulsed operation is also presented. With this technique, the nonuniform domain propagation in the three-dimensional-structure Gunn device in pulsed operation has been clearly observed. The duty cycle of the pulsed operation has been 4x10(-3).
Hosokawa
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Electron Beam Laboratory, Osaka University, Yamada-Kami, Suita, Osaka 565, Japan.
Fujioka
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Ura
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