Very thin poly-SiC films for micro/nano devices.
We report characterization of nitrogen-doped, very thin, low-stress polycrystalline silicon carbide (poly-SiC) films suitable for fabricating micro/nano devices. The poly-SiC films are deposited on 100 mm-diameter (100) silicon wafers in a large-scale, hot-wall, horizontal LPCVD furnace using SiH2Cl2 and C2H2 as precursors and NH, as doping gas. The deposition temperature and pressure are fixed at 900 degrees C and 4 Torr, respectively. The deposition rate increases substantially in the first 50 minutes, transitioning to a limiting value thereafter. The deposited films exhibit (111)-orientated polycrystalline 3C-SiC texture. HR-TEM indicates a 1 nm to 4 nm amorphous SiC layer at the SiC/silicon interface. The residual stress and the resistivity of the films are found to be thickness dependent in the range of 100 nm to 1 microm. Films with thickness less than 100 nm suffer from voids or pinholes. Films thicker than 100 nm are shown to be suitable for fabricating micro/nano devices.
Fu
Xiao-An
XA
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA.
Noh
Sangsoo
S
Chen
Li
L
Mehregany
Mehran
M