title: GaAs junction field effect transistors for low-temperature environments.
abstract: Thermal, electrical, and noise characteristics of a GaAs junction FET are described. Low voltage noise [1.5+/-0.2 nV/(Hz)(1/2) at T =4.2 K] and insensitivity to temperature change in the range 1.3< or =T < or =300 K make it suitable for low-temperature applications.
authors.affiliation: Randall Laboratory of Physics, The University of Michigan, Ann Arbor, MI 48109, USA.
authors.forename: S R
authors.initials: SR
authors.lastname: Forrest
authors.forename: T M
authors.initials: TM
authors.lastname: Sanders