New evaporation geometry for deposition of silicon monoxide film.
A new evaporation geometry for the deposition of pinhole-free films of silicon monoxide has been developed. This geometry makes use of the fact that if silicon monoxide is heated in a chamber connected to a long narrow baffle perpendicular to it and leading to another chamber with a V-shaped opening, the paths for particle ejection are eliminated and homogeneous and pinhole-free film deposition occurs. The use of this geometry leads to reproducible films on a high yield basis. The same principle can also be used in other applications requiring the filtering of vapors. The geometry is found to be compatible with other materials which do not react with it.
Singh
A
A
Solid State Devices Division, C.E.E.R.I., Pilani (Raj.) India.