title: Highly reliable temperature sensor using rf-sputtered SiC thin film.
abstract: A SiC thin-film thermistor for high-temperature use has been developed by using rf-sputtered SiC thin films. This thermistor can be used for industrial and consumer use within an operating temperature range of -100 to 450 degrees C. By using SiC thin films, the thermistor maintains high electrical stability. The resistance change is less than 3% after exposure to heat at 400 degrees C for 2000 h. In addition, the film growth technique made possible the production of a high-accuracy thermistor, i.e., thermistor coefficient < +/-0.5%, thermistor resistance < +/-1.5%.
authors.affiliation: Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Wasa
authors.forename: T
authors.initials: T
authors.lastname: Tohda
authors.forename: Y
authors.initials: Y
authors.lastname: Kasahara
authors.forename: S
authors.initials: S
authors.lastname: Hayakawa