title: Design and performance of a practical variable-temperature scanning tunneling potentiometry system.
abstract: We have constructed a scanning tunneling potentiometry system capable of simultaneously mapping the transport-related electrochemical potential of a biased sample along with its surface topography. Combining a novel sample biasing technique with a continuous current-nulling feedback scheme pushes the noise performance of the measurement to its fundamental limit--the Johnson noise of the scanning tunneling microscope (STM) tunnel junction. The resulting 130 nV voltage sensitivity allows us to spatially resolve local potentials at scales down to 2 nm, while maintaining angstrom scale STM imaging, all at scan sizes of up to 15 microm. A millimeter-range two-dimensional coarse positioning stage and the ability to operate from liquid helium to room temperature with a fast turn-around time greatly expand the versatility of the instrument. By performing studies of several model systems, we discuss the implications of various types of surface morphology for potentiometric measurements.
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: M
authors.initials: M
authors.lastname: Rozler
authors.forename: M R
authors.initials: MR
authors.lastname: Beasley