title: Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry.
abstract: We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of approximately 80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 x 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.forename: Zachery A
authors.initials: ZA
authors.lastname: Jacobson
authors.forename: Haleh
authors.initials: H
authors.lastname: Razavi
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
mesh_terms: D005336:Fiber Optic Technology / Q000295:instrumentation / Q000379:methods*; D019216:Metals, Heavy / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry; D012825:Silicon / Q000737:chemistry
chemical_list: D019216:Metals, Heavy; D012825:Silicon