title: Doping concentration of GaN nanowires determined by opto-electrical measurements.
abstract: The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface recombination. This effect is used to determine the doping level of the nanowires and to complete and consolidate our previously developed surface recombination model for GaN nanowires.
authors.affiliation: Institute of Bio- and Nanosystems, IBN-1 and cni-Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Richter
authors.forename: H Lüth R
authors.initials: HL
authors.lastname: Meijers
authors.forename: R
authors.initials: R
authors.lastname: Calarco
authors.forename: M
authors.initials: M
authors.lastname: Marso
mesh_terms: D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D053770:Nanowires; D055095:Optics and Photonics
chemical_list: C473348:gallium nitride; D005708:Gallium