title: GaAs photonic crystal cavity with ultrahigh Q: microwatt nonlinearity at 1.55 microm.
abstract: We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006)]. We measure a quality factor Q=700,000, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities.
authors: Thales Research and Technology, Palaiseau, France. sylvain.combrie@thalesgroup.com
authors: Sylvain
authors: S
authors: Combrié
authors: Alfredo
authors: A
authors: De Rossi
authors: Quynh Vy
authors: QV
authors: Tran
authors: Henri
authors: H
authors: Benisty