Sub-Poissonian shot noise of a high internal gain injection photon detector.
The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 mum. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.
Memis
Omer Gokalp
OG
Dept of Electrical Engineering and Computer Science, Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, Evanston, IL 60208, USA.
Katsnelson
Alex
A
Kong
Soon-Cheol
SC
Mohseni
Hooman
H
Yan
Minjun
M
Zhang
Shuang
S
Hossain
Tim
T
Jin
Niu
N
Adesida
Ilesanmi
I
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008962:Models, Theoretical; D010783:Photometry / Q000295:instrumentation*; D017785:Photons; D016012:Poisson Distribution; D014159:Transducers