title: Integration of hybrid silicon lasers and electroabsorption modulators.
abstract: We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.
authors: Intel Corporation, Santa Clara, CA 95054, USA. matthew.n.sysak@intel.com
authors: Matthew N
authors: MN
authors: Sysak
authors: Joel O
authors: JO
authors: Anthes
authors: John E
authors: JE
authors: Bowers
authors: Omri
authors: O
authors: Raday
authors: Richard
authors: R
authors: Jones
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon