title: Theoretical characterization of a typical hole/exciton-blocking material bathocuproine and its analogues.
abstract: The structural, electronic, and carrier transport properties of bathocuproine (BCP), which is a typical hole/exciton-blocking material applied in organic light-emitting diodes (OLEDs), have been investigated based on density functional theory (DFT) and ab initio HF method. The detail characterizations of frontier electronic structure and lowest-energy optical transitions have been studied by means of time-dependent density functional theory (TD-DFT). Five BCP analogues, o-phenanthroline (1), 2,9-dimethyl-1,10-phenanthroline (2), 2,9-diphenyl-1,10-phenanthroline (3), 4,7-diphenyl-1,10-phenanthroline (4), and 2,9-bis(trifluoromethyl)-1,10-phenanthroline (5) have also been studied in order to select more suitable candidates of efficient hole-blocking materials. The calculated results showed that rigid planar structures, conjugate degrees, and substitute groups play crucial roles in the hole/exciton-blocking and electron-transport properties of these materials. The calculated geometries, ionization energies (IP), and energy gap between the singlet ground state and triplet excited state (E(T1)) were well in agreement with the experimental results. On the basis of the incoherent transport model, the calculated electron mobility of BCP is 1.79 x 10(-2) cm(2)/(V s), which is comparable to experimental results of 1.1 x 10(-3) cm(2)/(V s). The electron mobilities for compounds 1, 4, and 5 are 3.45 x 10(-2), 2.90 x 10(-2), and 1.40 x 10(-2) cm(2)/(V s), respectively. The calculated results indicated that compounds 1, 4, and 5 may be more effective hole/exciton-blocking materials than BCP.
authors: State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, Jilin, People's Republic of China.
authors: Hongze
authors: H
authors: Gao
authors: Chunsheng
authors: C
authors: Qin
authors: Houyu
authors: H
authors: Zhang
authors: Shuixing
authors: S
authors: Wu
authors: Zhong-Min
authors: ZM
authors: Su
authors: Yue
authors: Y
authors: Wang