Coupled-ring-resonator-based silicon modulator for enhanced performance.
A compact silicon coupled-ring modulator structure is proposed. Two rings are coupled to each other, and only one of these rings is actively driven and over-coupled to a waveguide, which enables high modulation speed. The resultant notch filter profile is steeper than that of the single ring and has exhibited a smaller resonance shift and lower driving electrical power. Simulation results include: (i) potentially 60-Gb/s non-return-to-zero (NRZ) data modulation and over 20-dB extinction ratio can be achieved by shifting the active ring by a 20 GHz resonance shift, (ii) the frequency chirp of the modulated signals can be adjusted by varying the coupling coefficient between the two rings, and (iii) dispersion tolerance at 0.5-dB power penalty is extended from 18 to 85 ps/nm, for a 40-Gb/s NRZ signal.
Li
Yunchu
Y
Dept of Electrical Engineering, Univ of Southern California, Los Angeles, CA 90089, USA. yunchuli@usc.edu
Zhang
Lin
L
Song
Muping
M
Zhang
Bo
B
Yang
Jeng-Yuan
JY
Beausoleil
Raymond G
RG
Willner
Alan E
AE
Dapkus
P Daniel
PD
D003198:Computer Simulation; D017076:Computer-Aided Design; D005336:Fiber Optic Technology / Q000295:instrumentation*; D008027:Light; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation*; D012542:Scattering, Radiation; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers
D012825:Silicon