GaAs photonic crystal cavity with ultrahigh Q: microwatt nonlinearity at 1.55 microm.
We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006)]. We measure a quality factor Q=700,000, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities.
Combrié
Sylvain
S
Thales Research and Technology, Palaiseau, France. sylvain.combrie@thalesgroup.com
De Rossi
Alfredo
A
Tran
Quynh Vy
QV
Benisty
Henri
H