Understanding the kinetics and nanoscale morphology of electron-beam-induced deposition via a three-dimensional Monte Carlo simulation: the effects of the precursor molecule and the deposited material.
The electron-beam-induced deposition of silicon oxide from tetraethyorthosilicate and tungsten from tungsten hexafluoride is simulated via a Monte Carlo simulation. Pseudo one-dimensional nanopillars are grown using comparable electron-beam parameters and a comparison of the vertical and lateral growth rate and the pillar morphology is correlated to the precursor and deposited material parameters. The primary and secondary electrons (type I) are found to dominate the vertical growth rate and the lateral growth rate is dominated by forward and secondary electrons (type II). The resolution and morphology of the nanopillars are affected by the effective electron interaction volume and the resultant surface coverage of the precursor species in the effective electron interaction region. Finally, the simulated results are compared to previously reported experimental results.
Smith
Daryl A
DA
Department of Materials Science and Engineering, The University of Tennessee, 434 Dougherty Hall, Knoxville, TN 37996, USA.
Fowlkes
Jason D
JD
Rack
Philip D
PD
D003198:Computer Simulation; D004583:Electrons; D005740:Gases / Q000737:chemistry; D007700:Kinetics; D009010:Monte Carlo Method; D049329:Nanostructures / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry
D005740:Gases; D012822:Silicon Dioxide