title: Sub-Poissonian shot noise of a high internal gain injection photon detector.
abstract: The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 mum. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.
authors: Dept of Electrical Engineering and Computer Science, Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, Evanston, IL 60208, USA.
authors: Omer Gokalp
authors: OG
authors: Memis
authors: Alex
authors: A
authors: Katsnelson
authors: Soon-Cheol
authors: SC
authors: Kong
authors: Hooman
authors: H
authors: Mohseni
authors: Minjun
authors: M
authors: Yan
authors: Shuang
authors: S
authors: Zhang
authors: Tim
authors: T
authors: Hossain
authors: Niu
authors: N
authors: Jin
authors: Ilesanmi
authors: I
authors: Adesida
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008962:Models, Theoretical; D010783:Photometry / Q000295:instrumentation*; D017785:Photons; D016012:Poisson Distribution; D014159:Transducers