Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well.
Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.
Toyama
Kiyohiko
K
Department of Physics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
Nishioka
Takahisa
T
Sawano
Kentarou
K
Shiraki
Yasuhiro
Y
Okamoto
Tohru
T