title: Growth mechanism of Si-faceted dendrites.
abstract: The growth mechanism of Si-faceted dendrite was studied using an in situ observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60 degrees are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.
authors.affiliation: Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Japan. kozo@imr.tohoku.ac.jp
authors.forename: K
authors.initials: K
authors.lastname: Fujiwara
authors.forename: K
authors.initials: K
authors.lastname: Maeda
authors.forename: N
authors.initials: N
authors.lastname: Usami
authors.forename: K
authors.initials: K
authors.lastname: Nakajima