title: Control of ferromagnetism via electron doping in In2O3:Cr.
abstract: Carrier-induced ferromagnetism in wide-gap transparent conductive oxides has been widely discussed and debated, leading to confusion and skepticism regarding whether dilute magnetic oxides exist at all. We show from density-functional calculations within a band-gap corrected approach that ferromagnetic Cr-Cr coupling can be switched on and off via electron doping in the wide-gap transparent n-type conductive oxide In2O3. We show that (i) Cr does not produce in In2O3 any free electrons and renders the system an insulating paramagnet. (ii) Extrinsic n-type doping of In2O3:Cr via Sn produces free electrons, whose concentration is controllable via the oxygen partial pressure. Such additional carriers stabilize a strong long-range Cr-Cr ferromagnetic coupling.
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: Hannes
authors.initials: H
authors.lastname: Raebiger
authors.forename: Stephan
authors.initials: S
authors.lastname: Lany
authors.forename: Alex
authors.initials: A
authors.lastname: Zunger