Spin manipulation in Co-doped ZnO.
We report the clearly observed tunneling magnetoresistance at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom ferromagnetic electrode and Co as a top ferromagnetic electrode prepared by pulsed laser deposition. Spin-polarized electrons were injected from Co-doped ZnO to the crystallized Al2O3 and tunnelled through the amorphous Al2O3 barrier. Our studies demonstrate the spin polarization in Co-doped ZnO and its possible application in future ZnO-based spintronics devices.
Xu
Qingyu
Q
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf e.V., Bautzner Landstrasse 128, 01328 Dresden, Germany. xuqingyu_1974@yahoo.com
Hartmann
Lars
L
Zhou
Shengqiang
S
Mcklich
Arndt
A
Helm
Manfred
M
Biehne
Gisela
G
Hochmuth
Holger
H
Lorenz
Michael
M
Grundmann
Marius
M
Schmidt
Heidemarie
H