title: Charge transport in chemically doped 2D graphene.
abstract: We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the resulting charge mobilities and conductivities of systems with impurity concentration ranging within [0.5, 4.0]%. Even for a doping concentration as large as 4.0%, the conduction is marginally affected by quantum interference effects, preserving therefore remarkable transport properties, even down to the zero temperature limit. As a result of the chemical doping, electron-hole mobilities and conductivities are shown to become asymmetric with respect to the Dirac point.
authors.affiliation: Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS, 17 Rue des Martyrs 38054 Grenoble, France.
authors.forename: Aurélien
authors.initials: A
authors.lastname: Lherbier
authors.forename: X
authors.initials: X
authors.lastname: Blase
authors.forename: Yann-Michel
authors.initials: YM
authors.lastname: Niquet
authors.forename: François
authors.initials: F
authors.lastname: Triozon
authors.forename: Stephan
authors.initials: S
authors.lastname: Roche