Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-catalyzed, Si wires.
Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCl 4 at 1000 degrees C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10(16) atoms/cm(3), similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires.
Putnam
Morgan C
MC
Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 East California Boulevard, Pasadena, California 91125, USA. putnam@caltech.edu
Filler
Michael A
MA
Kayes
Brendan M
BM
Kelzenberg
Michael D
MD
Guan
Yunbin
Y
Lewis
Nathan S
NS
Eiler
John M
JM
Atwater
Harry A
HA