Novel poly-silicon nanowire field effect transistor for biosensing application.
A simple and low-cost method to fabricate poly-silicon nanowire field effect transistor (poly-Si NW FET) for biosensing application was demonstrated. The poly-silicon nanowire (poly-Si NW) channel was fabricated by employing the poly-silicon (poly-Si) sidewall spacer technique, which approach was comparable with current commercial semiconductor process and forsaken expensive E-beam lithography tools. The electronic properties of the poly-Si NW FET in aqueous solution were found to be similar to those of single-crystal silicon nanowire field effect transistors reported in the literature. A model biotin and avidin/streptavidin sensing system was used to demonstrate the biosensing capacity of poly-Si NW FET. The changes of I(D)-V(G) curves were consistent with an n-type FET affected by a nearby negatively (streptavidin) and positively (avidin) charged molecules, respectively. Specific electric changes were observed for streptavidin and avidin sensing when nanowire surface of poly-Si NW FET was modified with biotin and streptavidin at sub pM to nM range could be distinguished. With its excellent electric properties and the potential for mass commercial production, poly-Si NW FET can be a very useful transducer for a variety of biosensing applications.
Hsiao
Cheng-Yun
CY
Institute of Biological Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan.
Lin
Chih-Heng
CH
Hung
Cheng-Hsiung
CH
Su
Chun-Jung
CJ
Lo
Yen-Ren
YR
Lee
Cheng-Che
CC
Lin
Horng-Chin
HC
Ko
Fu-Hsiang
FH
Huang
Tiao-Yuan
TY
Yang
Yuh-Shyong
YS