Fully band-resolved scattering rate in MgB2 revealed by the nonlinear hall effect and magnetoresistance measurements.
We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.
Yang
Huan
H
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, P. R. China.
Liu
Yi
Y
Zhuang
Chenggang
C
Shi
Junren
J
Yao
Yugui
Y
Massidda
Sandro
S
Monni
Marco
M
Jia
Ying
Y
Xi
Xiaoxing
X
Li
Qi
Q
Liu
Zi-Kui
ZK
Feng
Qingrong
Q
Wen
Hai-Hu
HH