title: Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.
abstract: Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.
authors.affiliation: School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Xiaosong
authors.initials: X
authors.lastname: Wu
authors.forename: Mike
authors.initials: M
authors.lastname: Sprinkle
authors.forename: Xuebin
authors.initials: X
authors.lastname: Li
authors.forename: Fan
authors.initials: F
authors.lastname: Ming
authors.forename: Claire
authors.initials: C
authors.lastname: Berger
authors.forename: Walt A
authors.initials: WA
authors.lastname: de Heer