title: Hole localization in the one-dimensional doped Anderson-Hubbard model.
abstract: We study an interplay of disorder and correlation in the one-dimensional hole-doped Hubbard-model with disorder (Anderson-Hubbard model) by using the density-matrix renormalization group method. Concentrating on the doped-hole-density profile, we find in a large U/t regime that the clean system exhibits a simple fluidlike behavior whereas finite disorders create locally Mott regions which expand their area with increasing the disorder strength contrary to the conventional sense. We propose that such an anomalous Mott phase formation assisted by disorder is easily observable in atomic Fermi gases by setting up the box-shape trap.
authors.affiliation: CCSE, Japan Atomic Energy Agency, 6-9-3 Higashi-Ueno, Taito-ku, Tokyo 110-0015, Japan. okumura.masahiko@jaea.go.jp
authors.forename: M
authors.initials: M
authors.lastname: Okumura
authors.forename: S
authors.initials: S
authors.lastname: Yamada
authors.forename: N
authors.initials: N
authors.lastname: Taniguchi
authors.forename: M
authors.initials: M
authors.lastname: Machida