title: Control of InAs nanowire growth directions on Si.
abstract: We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
authors.affiliation: Graduate School of Information Science and Technology, Hokkaido University, North14 West9, 060-0814, Sapporo, Japan. tomioka@rciqe.hokudai.ac.jp
authors.forename: Katsuhiro
authors.initials: K
authors.lastname: Tomioka
authors.forename: Junichi
authors.initials: J
authors.lastname: Motohisa
authors.forename: Shinjiroh
authors.initials: S
authors.lastname: Hara
authors.forename: Takashi
authors.initials: T
authors.lastname: Fukui