Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.
Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.
Hsieh
Chin-Hua
CH
Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2 Kuang-Fu Road, Hsinchu, Taiwan 300, Republic of China.
Chang
Mu-Tung
MT
Chien
Yu-Jen
YJ
Chou
Li-Jen
LJ
Chen
Lih-Juann
LJ
Chen
Chii-Dong
CD