title: Microwave induced in-situ active ion etching of growing InP nanocrystals.
abstract: High quantum yield (47%) InP nanocrystals can be prepared without the need for post HF treatment by combining microwave methodologies with the presence of a fluorinated ionic liquid. Growing the InP nanocrystals in the presence of the ionic liquid 1-hexyl-3-methyl-imidazolium tetrafluoroborate (hmim BF4) allows in situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
authors.affiliation: Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306-4390, USA.
authors.forename: Derek D
authors.initials: DD
authors.lastname: Lovingood
authors.forename: Geoffrey F
authors.initials: GF
authors.lastname: Strouse
mesh_terms: D001881:Borates / Q000737:chemistry; D003460:Crystallization; D005461:Fluorine / Q000737:chemistry; D007204:Indium / Q000737:chemistry; D007477:Ions / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D008872:Microwaves; D053758:Nanoparticles / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D010710:Phosphates / Q000737:chemistry; D013499:Surface Properties
chemical_list: D001881:Borates; D007477:Ions; D010710:Phosphates; D007204:Indium; D005461:Fluorine