Control of InAs nanowire growth directions on Si.
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
Tomioka
Katsuhiro
K
Graduate School of Information Science and Technology, Hokkaido University, North14 West9, 060-0814, Sapporo, Japan. tomioka@rciqe.hokudai.ac.jp
Motohisa
Junichi
J
Hara
Shinjiroh
S
Fukui
Takashi
T