Competition between the spring force constant and the phonon energy renormalization in electrochemically doped semiconducting single-walled carbon nanotubes.
A detailed analysis of the in situ Raman spectroelectrochemical behavior of individual semiconducting single-walled carbon nanotubes (SWCNTs) is presented. Special attention has been paid to the development of the tangential (TG) mode frequency, which shifts when the externally applied potential Ve is shifted away from Ve=0. The magnitude and direction (upshift or downshift) of the tangential mode band has been found to be dependent on the diameter of the semiconducting tubes. For negative charging, the small-diameter tubes exhibit a downshift while the large-diameter tubes exhibit an upshift. This behavior is explained by a competition between two effects which cause opposite shifts in the TG mode frequency during negative charging: a phonon renormalization effect and a C-C bond weakening during the charging process. Positive charging always causes an upshift of the TG mode frequency. However, the magnitude of the upshift is dependent on the tube diameter.
Kalbac
M
M
J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejskova 3, CZ-18223 Prague 8, Czech Republic. kalbac@jh-inst.cas.cz
Farhat
H
H
Kavan
L
L
Kong
J
J
Dresselhaus
M S
MS
D002244:Carbon / Q000737:chemistry; D003460:Crystallization; D004563:Electrochemistry / Q000379:methods*; D004566:Electrodes; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry; D037742:Nanotubes, Carbon / Q000737:chemistry*; D012666:Semiconductors; D013059:Spectrum Analysis, Raman; D013499:Surface Properties
D037742:Nanotubes, Carbon; D002244:Carbon