title: Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.
abstract: Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2 Kuang-Fu Road, Hsinchu, Taiwan 300, Republic of China.
authors.forename: Chin-Hua
authors.initials: CH
authors.lastname: Hsieh
authors.forename: Mu-Tung
authors.initials: MT
authors.lastname: Chang
authors.forename: Yu-Jen
authors.initials: YJ
authors.lastname: Chien
authors.forename: Li-Jen
authors.initials: LJ
authors.lastname: Chou
authors.forename: Lih-Juann
authors.initials: LJ
authors.lastname: Chen
authors.forename: Chii-Dong
authors.initials: CD
authors.lastname: Chen